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    SMD TRANSISTOR GS F Search Results

    SMD TRANSISTOR GS F Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR GS F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MOSFET IC SMD Type P-Channel Enhancement Mode Field Effect Transistor @O3423 A SOT-23 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 • Features 1 ● RDS ON < 118m Ω (V GS = -4.5V) +0.05 0.1-0.01 +0.2 1.1 -0.1 ● ESD Rating: 2000V HBM 2 +0.1 0.95-0.1 +0.2 1.9-0.2


    Original     		PDF OT-23

    smd transistor M30

    Abstract: siemens gaas fet m30 smd TRANSISTOR Behet SIEMENS MICROWAVE RADIO HBT3 low noise hemt x-band microwave fet infineon rf smd package w-band
    Text: 7KH *D$V RXQGU\ +LVWRU\ Since 1975 Infineon Technologies former Siemens Semiconductors) has been engaged in research and development of III-V semiconductor components and circuits. The world‘s first commercially available GaAs MMIC was created by Infineon Technologies in 1981.


    Original     		PDF D-81541 smd transistor M30 siemens gaas fet m30 smd TRANSISTOR Behet SIEMENS MICROWAVE RADIO HBT3 low noise hemt x-band microwave fet infineon rf smd package w-band

    TRANSISTOR SMD

    Abstract: No abstract text available
    Text: NTE2401 Silicon PNP Transistor RF Stages in FM Front Ends Description: The NTE2401 is a silicon PNP transistor in a plastic SOT–23 type surface mount package designed for use in RF stages in FM front–ends in common base configuration for SMD applications.


    Original     		PDF NTE2401 NTE2401 100MHz TRANSISTOR SMD

    6r385P

    Abstract: IPD60R385CP 6R38 6r385 6r385p infineon JESD22 SP000062533 INFINEON transistor marking
    Text: IPD60R385CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO252 650 0.385 Ω R DS on ,max • Ultra low gate charge V Q g,typ 17 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPD60R385CP PG-TO252 SP000062533 6R385P 6r385P IPD60R385CP 6R38 6r385 6r385p infineon JESD22 SP000062533 INFINEON transistor marking

    6R165P

    Abstract: 6R165 IPP60R165CP smd transistor marking F12 IPB60R165CP JESD22 SP000096439 SMD TRANSISTOR MARKING code DD Infineon 6R165P IPP60R165
    Text: IPB60R165CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R165CP PG-TO263 IPP60R165CP SP000096439 6R165P 6R165P 6R165 IPP60R165CP smd transistor marking F12 IPB60R165CP JESD22 SP000096439 SMD TRANSISTOR MARKING code DD Infineon 6R165P IPP60R165

    6R199P

    Abstract: 6R199 6R199P DATA SHEET IPB60R199 mosfet 6R199 smd marking code cp IPB60R199CP SMD MARKING CODE 102 JESD22 SP000223256
    Text: IPB60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R199CP PG-TO263 SP000223256 6R199P 6R199P 6R199 6R199P DATA SHEET IPB60R199 mosfet 6R199 smd marking code cp IPB60R199CP SMD MARKING CODE 102 JESD22 SP000223256

    PD55003

    Abstract: PD55003S
    Text: PD55003 PD55003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5V • NEW RF PLASTIC PACKAGE


    Original     		PDF PD55003 PD55003S PD55003 PowerSO-10RF. PD55003S

    6R099

    Abstract: IPB60R099CP smd marking code cp smd code F18 CoolMOS Power Transistor SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag JESD22 SP000088490 MOSFET SMD MARKING CODE
    Text: IPB60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO263 R DS on ,max • Ultra low gate charge 650 V 0.099 Ω 60 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R099CP PG-TO263 SP000088490 6R099 6R099 IPB60R099CP smd marking code cp smd code F18 CoolMOS Power Transistor SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag JESD22 SP000088490 MOSFET SMD MARKING CODE

    6R099

    Abstract: IPB60R099CS smd code F18 infineon 6r099 PG-TO263-3-2 PG-TO-263-3-2 DF marking code smd transistor MOSFET MARKING CODE 7V
    Text: IPB60R099CS CoolMOSTM Power Transistor Product Summary Features V DS • Worldwide best R ds,on in TO263 R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R099CS PG-TO263-3-2 SP000088490 6R099 6R099 IPB60R099CS smd code F18 infineon 6r099 PG-TO263-3-2 PG-TO-263-3-2 DF marking code smd transistor MOSFET MARKING CODE 7V

    06N60

    Abstract: Q67040-S4629 SPP06N60C3 06N60C3 smd transistor marking G12
    Text: SPP06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		PDF SPP06N60C3 PG-TO220 Q67040-S4629 06N60C3 06N60 Q67040-S4629 SPP06N60C3 06N60C3 smd transistor marking G12

    702 transistor smd

    Abstract: TRANSISTOR SMD MARKING CODE 702 702 TRANSISTOR smd SOT23 transistor 702 F smd TRANSISTOR SMD 702 N 702 N smd transistor 702 y smd TRANSISTOR 702 k TRANSISTOR smd 702 transistor smd code smd transistor marking 702
    Text: Philips Semiconductors Product specification N-channel vertical D-MOS transistor FEATURES 2N7002 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. SYMBOL PARAMETER V ds drain-source voltage Id


    OCR Scan     		PDF 2N7002 702 transistor smd TRANSISTOR SMD MARKING CODE 702 702 TRANSISTOR smd SOT23 transistor 702 F smd TRANSISTOR SMD 702 N 702 N smd transistor 702 y smd TRANSISTOR 702 k TRANSISTOR smd 702 transistor smd code smd transistor marking 702

    Untitled

    Abstract: No abstract text available
    Text: • bh53131 00E3T77 STT « A P X N A PIER PHIL IPS/D ISCR ETE BST120 b7E D P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.


    OCR Scan     		PDF bh53131 00E3T77 BST120

    Untitled

    Abstract: No abstract text available
    Text: • bbS3^31 0023=155 33^ HIAPX N AUER PHILIPS/DISCRETE BST80 b?E D y v N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT89 envelope and designed fo r use as Surface Mounted Device SMD in thin and thick-film circuits fo r application with relay, high-speed


    OCR Scan     		PDF BST80

    02p SMD TRANSISTOR

    Abstract: No abstract text available
    Text: • bbS3131 002315=1 56H « A P X N AUER PHILIPS/DISCRETE BST82 b7E D y v . N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device SMD in thin and thick-film circuits for telephone ringer and for application


    OCR Scan     		PDF bbS3131 BST82 175DSon 02p SMD TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: t.bSB'm DOSSfllO b74 • APX PMBF170 N AUER PHILIPS/DISCRETE b7E D _ J \ _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed fo r use as a


    OCR Scan     		PDF PMBF170 bb53T31 00ES81E

    Untitled

    Abstract: No abstract text available
    Text: • bL53T31 0025b57 8^13 « A P X N AMER PHILIPS/D ISCR ETE b?E ]> BST86 J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT89 envelope and designed fo r use as Surface Mounted Device SMD in th in and th ick-film circuits fo r application w ith relay, high-speed


    OCR Scan     		PDF bL53T31 0025b57 BST86 0D35bbD BST86

    transistor SMD MARKING CODE HF

    Abstract: smd code HF transistor
    Text: • bbS3T31 0DE470fl 14fl ■ APX N AUER PHILIPS/DISCRETE BF824 b7E D 7 V H.F. SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic SOT-23 envelope especially intended for r.f. stages in f.m. front-ends in common base configuration for SMD applications.


    OCR Scan     		PDF bbS3T31 0DE470fl BF824 OT-23 bb53131 0DEM711 7Z72155 7Z72159 D024712 transistor SMD MARKING CODE HF smd code HF transistor

    transistor 8BB smd

    Abstract: smd diode marking 3fs smd code book B3 transistor transistor marking smd 7c smd diode 77a q1333su BUZ100S smd DIODE 3FS H7 marking code smd smd transistor c015
    Text: BUZ 10OS In fin e o n technologie» SIPMOS Power Transistor Product Summary Features 55 V • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.015 Í2 77 A • dv/df rated


    OCR Scan     		PDF BUZ100S P-T0220-3-1 Q67040-S4001-A2 E3045A P-T0263-3-2 Q67040-S4001-A6 E3045 transistor 8BB smd smd diode marking 3fs smd code book B3 transistor transistor marking smd 7c smd diode 77a q1333su smd DIODE 3FS H7 marking code smd smd transistor c015

    30N03

    Abstract: marking code ff p SMD Transistor smd transistor TN 6 pin TRANSISTOR SMD CODE XI G1337 TRANSISTOR SMD MARKING CODE XI SPB30N03 SPP30N03 SMD transistor 2x sot 23 smd code book B3
    Text: SPP 30N03 Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage Vbs • Enhancement mode Drain-Source on-state resistance ^ D S o n • Avalanche rated Continuous drain current b V 30 0.023 a A 30 • dy/df rated


    OCR Scan     		PDF SPP30N03 P-T0220-3-1 Q67040-S4736-A2 SPB30N03 P-T0263-3-2 Q67040-S4736-A3 VPT05I64 fiS35bG5 D133777 SQT-89 30N03 marking code ff p SMD Transistor smd transistor TN 6 pin TRANSISTOR SMD CODE XI G1337 TRANSISTOR SMD MARKING CODE XI SMD transistor 2x sot 23 smd code book B3

    SMD TRANSISTOR MARKING 9f

    Abstract: H7 marking code smd BUZ101SL E3045 Q67040-S4012-A2 004II
    Text: BUZ 101SL I nf ineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ñ DS on Continuous drain current b • Avalanche rated ^DS 55 V 0.04 ii 20 A • Logic Level


    OCR Scan     		PDF BUZ101SL_ P-TQ220-3-1 Q67040-S4012-A2 BUZ101SL E3045A P-TQ263-3-2 Q67040-S4012-A6 E3045 P-T0263-3-2 SMD TRANSISTOR MARKING 9f H7 marking code smd 004II

    lg smd transistor LF

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor In a plastic envelope suitable for surface mounting using ’trench’ technology.


    OCR Scan     		PDF BUK9621-30 SQT404 lg smd transistor LF

    smd transistor marking 7j

    Abstract: TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE BS s BUZ103S E3045 Q67040-S4009-A2 diode marking code MU marking 684 diode smD
    Text: Infineon BUZ103S ,y e d Rosi0"' ’ technologie» im p f SIPMOS® Power Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ñ D S o n • Avalanche rated Continuous drain current


    OCR Scan     		PDF BUZ103S BUZ103S P-T0220-3-1 Q67040-S4009-A2 E3045A P-T0263-3-2 Q67040-S4009-A6 E3045 smd transistor marking 7j TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE BS s diode marking code MU marking 684 diode smD

    FDS 4800

    Abstract: smd transistor 9f8 smd marking 9T smd diode code 9T smd transistor H7 BUZ111SL TRANSISTOR SMD MARKING CODE BS s SMD TRANSISTOR MARKING 45B BUZ111 D133457
    Text: BUZ 111SL I nf ineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance f l DS on 0.007 n A 80 t> Continuous drain current • Avalanche rated 55 V • Logic Level


    OCR Scan     		PDF 111SL BUZ111SL P-T0220-3-1 Q67040-S4002-A2 E3045A P-T0263-3-2 Q67040-S4002-A6 E3045 FDS 4800 smd transistor 9f8 smd marking 9T smd diode code 9T smd transistor H7 TRANSISTOR SMD MARKING CODE BS s SMD TRANSISTOR MARKING 45B BUZ111 D133457

    TRANSISTOR SMD MARKING CODE 702

    Abstract: 702 Z smd TRANSISTOR 702 Z TRANSISTOR smd TRANSISTOR SMD 702 N 702 H transistor smd smd diode 708 TRANSISTOR SMD MARKING CODE 702 4 702 y smd TRANSISTOR 703 TRANSISTOR smd 702 TRANSISTOR smd
    Text: Infineo n |m p ,° v e d technologies f c — BUZ 104SL • SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage Vds • Enhancement mode Drain-Source on-state resistance f l DS on • Avalanche rated Continuous drain current


    OCR Scan     		PDF BUZ104SL BUZ104SL P-T0220-3-1 Q67040-S4006-A2 E3045A P-T0263-3-2 Q67040-S4006-A6 E3045 TRANSISTOR SMD MARKING CODE 702 702 Z smd TRANSISTOR 702 Z TRANSISTOR smd TRANSISTOR SMD 702 N 702 H transistor smd smd diode 708 TRANSISTOR SMD MARKING CODE 702 4 702 y smd TRANSISTOR 703 TRANSISTOR smd 702 TRANSISTOR smd