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    SMD TRANSISTOR A7 S 50 Search Results

    SMD TRANSISTOR A7 S 50 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR A7 S 50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A7 SMD TRANSISTOR

    Abstract: SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor
    Text: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8kx8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64k CMOS • Electrically Screened to SMD # 5962-95626 [ /Title PROM, organized in an 8k word by 8-bit format. The chip is


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    PDF HS-6664RH HS-6664RH HS6664R A7 SMD TRANSISTOR SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor

    A7 SMD TRANSISTOR

    Abstract: SMD Transistor A12 smd transistor A11 A9 transistor SMD SMD a7 Transistor smd transistor A7 smd transistor A8 5962F9562601VYC SMD A8 Transistor smd a10
    Text: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8K x 8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process,


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    PDF HS-6664RH HS-6664RH A7 SMD TRANSISTOR SMD Transistor A12 smd transistor A11 A9 transistor SMD SMD a7 Transistor smd transistor A7 smd transistor A8 5962F9562601VYC SMD A8 Transistor smd a10

    smd transistor a9

    Abstract: A7 SMD TRANSISTOR smd transistor A8 smd transistor A6 SMD Transistor A12 SMD A8 Transistor HS1-6664RH-T smd transistor A11 smd transistor a4 SMD T28
    Text: HS-6664RH-T Data Sheet July 1999 File Number Radiation Hardened 8K x 8 CMOS PROM Features Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


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    PDF HS-6664RH-T 100kRAD MIL-PRF-38535 HS-6664RH-T smd transistor a9 A7 SMD TRANSISTOR smd transistor A8 smd transistor A6 SMD Transistor A12 SMD A8 Transistor HS1-6664RH-T smd transistor A11 smd transistor a4 SMD T28

    6kaa

    Abstract: SMD Transistor A12 SMD T28 smd A4 SMD a6 Transistor SMD a7 Transistor smd transistor a4 5962R9562601TXC 5962R9562601TYC CDFP3-F28
    Text: HS-6664RH-T TM Data Sheet July 1999 Radiation Hardened 8K x 8 CMOS PROM Features Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


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    PDF HS-6664RH-T 100kRAD FN4609 MIL-PRF-38535 HS-6664RH-T 6kaa SMD Transistor A12 SMD T28 smd A4 SMD a6 Transistor SMD a7 Transistor smd transistor a4 5962R9562601TXC 5962R9562601TYC CDFP3-F28

    ta 6203

    Abstract: 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9 HM-65262
    Text: HM-65262 S E M I C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/85ns Max The HM-65262 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Harris Advanced


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    PDF HM-65262 70/85ns HM-65262 ta 6203 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9

    dynamic ram binary cell

    Abstract: A7 W SMD TRANSISTOR A7 SMD TRANSISTOR SMD F14 transistor SMD f12 smd transistor A6 5962F9582301QXC 5962F9582301QYC SMD Transistor A12 5962F9582301VYC
    Text: HS-65647RH TM Data Sheet Radiation Hardened 8K x 8 SOS CMOS Static RAM The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM. This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology. This technology gives exceptional hardness to all types of


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    PDF HS-65647RH HS-65647RH dynamic ram binary cell A7 W SMD TRANSISTOR A7 SMD TRANSISTOR SMD F14 transistor SMD f12 smd transistor A6 5962F9582301QXC 5962F9582301QYC SMD Transistor A12 5962F9582301VYC

    smd transistor A13

    Abstract: A9 transistor SMD 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9
    Text: HM-65262 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/85ns Max The HM-65262 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Intersil Advanced


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    PDF HM-65262 70/85ns HM-65262 smd transistor A13 A9 transistor SMD 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9

    26256

    Abstract: smd transistor A13 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9
    Text: HM-65262 TM 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time . . . . . . . . . . . . . . . . . . . 70/85ns Max The HM-65262 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Intersil Advanced


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    PDF HM-65262 70/85ns HM-65262 26256 smd transistor A13 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9

    6R190C6

    Abstract: No abstract text available
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6


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    PDF IPx60R190C6 IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 6R190C6

    6R190C6

    Abstract: IPI60R190C6 IPA60R190C6 IPB60R190C6 IPP60R190C6 IPW60R190C6 MOSFET TRANSISTOR SMD MARKING CODE 11 6R190
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6


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    PDF IPx60R190C6 IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 6R190C6 IPI60R190C6 IPA60R190C6 IPB60R190C6 IPP60R190C6 IPW60R190C6 MOSFET TRANSISTOR SMD MARKING CODE 11 6R190

    6R190

    Abstract: 6R190C6 6r190c IPW60R190
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6


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    PDF IPx60R190C6 IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 6R190 6R190C6 6r190c IPW60R190

    6R190C6

    Abstract: 6r190 6r190c to247 pcb footprint transistor SMD MARKING CODE 14
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6


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    PDF IPx60R190C6 IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 6R190C6 6r190 6r190c to247 pcb footprint transistor SMD MARKING CODE 14

    6R190C6

    Abstract: marking code ll SMD Transistor SMD TRANSISTOR MARKING 9D 6r190 d 998 transistor circuit smd transistor marking LL IPA60R190C6 IPB60R190C6 IPI60R190C6 IPP60R190C6
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6


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    PDF IPx60R190C6 IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 6R190C6 marking code ll SMD Transistor SMD TRANSISTOR MARKING 9D 6r190 d 998 transistor circuit smd transistor marking LL IPA60R190C6 IPB60R190C6 IPI60R190C6 IPP60R190C6

    Untitled

    Abstract: No abstract text available
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6


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    PDF IPx60R190C6 IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6

    6R190C6

    Abstract: 6r190 6r190c SMD TRANSISTOR MARKING 9D IPA60R190C6 IPB60R190C6 IPP60R190C6 IPW60R190C6 6r190c6 infineon 6R19
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6


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    PDF IPx60R190C6 IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 726-IPB60R190C6 IPB60R190C6 6R190C6 6r190 6r190c SMD TRANSISTOR MARKING 9D IPA60R190C6 IPW60R190C6 6r190c6 infineon 6R19

    transistor r1012

    Abstract: npn smd 2n2222 smd 2DG12 SMD d2b 2n2222 smd DG1 smd transistor SMD D8B SMD diode C715 AN7852 C2559
    Text: AN7852 EVALUATION BOARD APPLICATION NOTE FEATURES CAPABILITIES AND APPLICATIONS • Dual Channel Analog Input • 10-Bit Resolution • Conversion RateUp to 20 MSPS • On-Board Clock Driver • On-Board Adjustable References • Input Buffers With Adjustable Offset Level


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    PDF AN7852 10-Bit SPT7852 10-bit transistor r1012 npn smd 2n2222 smd 2DG12 SMD d2b 2n2222 smd DG1 smd transistor SMD D8B SMD diode C715 AN7852 C2559

    Untitled

    Abstract: No abstract text available
    Text: HM-65262 Semiconductor 16K x 1 Asynchronous CMOS Static RAM March 1997 Description Features • Fast Access Time. 70/85ns Max • Low Standby Current. 50^A Max • Low Operating C u rren t. 50mA Max


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    PDF HM-65262 70/85ns HM-65262

    Untitled

    Abstract: No abstract text available
    Text: SB H A R R HM-65262 IS S E MI C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM January 1992 Pinouts Fast Access T im e .70/85n* Max Low Standby Current. 50nA Max


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    PDF HM-65262 70/85n*

    Untitled

    Abstract: No abstract text available
    Text: HS-6664RH-T Semiconductor December 1998 Data Sheet File Num ber Radiation Hardened 8 K x 8 CMOS PROM Features Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


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    PDF HS-6664RH-T 100kRAD MIL-PRF-38535 HS-6664RH-T 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: HS-6664RH-T Data Sheet July 1999 File Number Radiation Hardened 8 K x 8 CMOS PROM Features Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


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    PDF HS-6664RH-T 100kRAD MIL-PRF-38535 HS-6664RH-T 1-800-4-HARRIS

    LD 757 ps

    Abstract: smd code cfa
    Text: SIEMENS BUZ104L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dw/df rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ104L l'os 50 V fa 17.5 A ffesíon


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    PDF O-220 BUZ104L C67078-S1358-A2 PT05155 LD 757 ps smd code cfa

    Untitled

    Abstract: No abstract text available
    Text: HM-65262 HARRIS a S E M I C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM August 1996 Description Features • Fast Access T im e. 70/85nsM ax • Low Standby C urrent. 50|xA Max


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    PDF HM-65262 70/85nsM HM-65262

    hm 6203

    Abstract: 841320 J20.C Package rm 6203
    Text: HM-65262 HARRIS S E M I C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM M a rc h 1 9 9 7 Features Description • Fast Access Time. 70/85ns Max • Low Standby Current. 50|.iA Max


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    PDF HM-65262 HM-65262 HM-65262, hm 6203 841320 J20.C Package rm 6203

    transistor smd hq

    Abstract: No abstract text available
    Text: f u H v i u S E M I C O N D U C T O R A R R HM-65642 IS 8K X 8 Asynchronous CMOS StStiC RAM January 1992 Features Description • Full CMOS Design The HM-65642 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which


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    PDF HM-65642 HM-65642 80C86 80C88 transistor smd hq