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    SMD TRANSISTOR A7 S 22 Search Results

    SMD TRANSISTOR A7 S 22 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR A7 S 22 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A7 SMD TRANSISTOR

    Abstract: SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor
    Text: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8kx8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64k CMOS • Electrically Screened to SMD # 5962-95626 [ /Title PROM, organized in an 8k word by 8-bit format. The chip is


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    PDF HS-6664RH HS-6664RH HS6664R A7 SMD TRANSISTOR SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor

    smd transistor a9

    Abstract: A7 SMD TRANSISTOR smd transistor A8 smd transistor A6 SMD Transistor A12 SMD A8 Transistor HS1-6664RH-T smd transistor A11 smd transistor a4 SMD T28
    Text: HS-6664RH-T Data Sheet July 1999 File Number Radiation Hardened 8K x 8 CMOS PROM Features Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


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    PDF HS-6664RH-T 100kRAD MIL-PRF-38535 HS-6664RH-T smd transistor a9 A7 SMD TRANSISTOR smd transistor A8 smd transistor A6 SMD Transistor A12 SMD A8 Transistor HS1-6664RH-T smd transistor A11 smd transistor a4 SMD T28

    dynamic ram binary cell

    Abstract: A7 W SMD TRANSISTOR A7 SMD TRANSISTOR SMD F14 transistor SMD f12 smd transistor A6 5962F9582301QXC 5962F9582301QYC SMD Transistor A12 5962F9582301VYC
    Text: HS-65647RH TM Data Sheet Radiation Hardened 8K x 8 SOS CMOS Static RAM The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM. This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology. This technology gives exceptional hardness to all types of


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    PDF HS-65647RH HS-65647RH dynamic ram binary cell A7 W SMD TRANSISTOR A7 SMD TRANSISTOR SMD F14 transistor SMD f12 smd transistor A6 5962F9582301QXC 5962F9582301QYC SMD Transistor A12 5962F9582301VYC

    Untitled

    Abstract: No abstract text available
    Text: PBSS9110D 100 V, 1 A PNP low VCEsat BISS transistor Rev. 03 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.


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    PDF PBSS9110D OT457 SC-74) PBSS8110D. PBSS9110D

    smd transistor A13

    Abstract: A9 transistor SMD 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9
    Text: HM-65262 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/85ns Max The HM-65262 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Intersil Advanced


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    PDF HM-65262 70/85ns HM-65262 smd transistor A13 A9 transistor SMD 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9

    6R190C6

    Abstract: 6r190 6r190c SMD TRANSISTOR MARKING 9D IPA60R190C6 IPB60R190C6 IPP60R190C6 IPW60R190C6 6r190c6 infineon 6R19
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6


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    PDF IPx60R190C6 IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 726-IPB60R190C6 IPB60R190C6 6R190C6 6r190 6r190c SMD TRANSISTOR MARKING 9D IPA60R190C6 IPW60R190C6 6r190c6 infineon 6R19

    smd transistor marking A10

    Abstract: smd transistor marking A6 SDA 30C162 smd transistor wc 30C162 TRANSISTOR SMD MARKING CODE 5b smd code A9 3 pin transistor TRANSISTOR SMD MARKING CODE a6 SMD transistor MARKING CODE 312 diode smd marking BUF
    Text: ICs for Consumer Electronics MEGATEXT and MEGATEXT PLUS ICs SDA 5273 / SDA 5275 SDA 5273-2 / SDA 5275-2 Data Sheet 1997-09-01 MEGATEXT and MEGATEXT PLUS ICs SDA 5273 / SDA 5275 SDA 5273-2 / SDA 5275-2 Revision History: 1997-09-01 Previous Releases: 11.96


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    PDF GPL05099 GPD05262 P-SDIP-52-1 smd transistor marking A10 smd transistor marking A6 SDA 30C162 smd transistor wc 30C162 TRANSISTOR SMD MARKING CODE 5b smd code A9 3 pin transistor TRANSISTOR SMD MARKING CODE a6 SMD transistor MARKING CODE 312 diode smd marking BUF

    742-08-3-103-J-XX

    Abstract: TRANSISTOR SMD a43 B56 smd transistor smd transistor b35 transistor ld12 SmD TRANSISTOR a42 SmD TRANSISTOR a45 smd code book a56 transistor B38 SMD Transistor SmD TRANSISTOR a41
    Text: UM10009_3 ISP1362 PCI Evaluation Board User’s Guide March 2003 User’s Guide Rev. 3.0 Revision History: Rev. Date March 2003 3.0 2.0 July 2002 1.0 June 2002 Descriptions Added 6-page schematics at the end of the document • Updated Table 4-1, Section 4.6, Appendix A and


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    PDF UM10009 ISP1362 10-Apr-2002 030701\Philips\ISP1362\Schematics\1362 0\1362pci 742-08-3-103-J-XX TRANSISTOR SMD a43 B56 smd transistor smd transistor b35 transistor ld12 SmD TRANSISTOR a42 SmD TRANSISTOR a45 smd code book a56 transistor B38 SMD Transistor SmD TRANSISTOR a41

    HX6256

    Abstract: D-10
    Text: Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD#5962–95845 • Total Dose Hardness through 1x106 rad(SiO2)


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    PDF HX6256 1x106 1x1014 1x109 1x1011 28-Lead MIL-STD-1835, CDIP2-T28 36-Lead HX6256 D-10

    SmD TRANSISTOR a41

    Abstract: SmD TRANSISTOR a71 schematic diagram epson r230 smd code A9 3 pin transistor transistor 1x100 smd transistor b35 SMD SOT23 a41 SMD CODE A71 R282 800 000 XFORMER cost of accident
    Text: PMC-Sierra, Inc. REFERENCE DESIGN PMC-970390 ISSUE 1 ADVANCE PM3351 ELAN 1x100 2-PORT 10/100 MBIT/S ETHERNET SWITCH PM3351 Elan 1x100 2-Port Fast Ethernet Switch Reference Design PROPRIETARY AND CONFIDENTIAL ADVANCE Issue 1: April , 1998 PMC-Sierra, Inc. 105 - 8555 Baxter Place Burnaby, BC Canada V5A 4V7 604 .415.6000


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    PDF PMC-970390 PM3351 1x100 PM3351 PMC-970390 SmD TRANSISTOR a41 SmD TRANSISTOR a71 schematic diagram epson r230 smd code A9 3 pin transistor transistor 1x100 smd transistor b35 SMD SOT23 a41 SMD CODE A71 R282 800 000 XFORMER cost of accident

    honeywell sn f10

    Abstract: HX6356 A12 SMD TRANSISTOR Honeywell load cell
    Text: Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106 rad(SiO2) • Fast Read/Write Cycle Times


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    PDF HX6356 1x106 1x1014 1x1011 1x1012 1x10-10 honeywell sn f10 HX6356 A12 SMD TRANSISTOR Honeywell load cell

    Untitled

    Abstract: No abstract text available
    Text: PBSS4630PA 30 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 6 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


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    PDF PBSS4630PA OT1061 PBSS5630PA.

    HX84050

    Abstract: No abstract text available
    Text: Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed on SMD #5962-96840 6 • Total Dose Hardness through 1x10 rad (SiO2) • Neutron Hardness through 1x1014 cm-2


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    PDF HX84050 1x1014 1x109 1x1011 1x10-10 200-Lead HX84050

    A16311

    Abstract: MARK 12LL diode M5M5V208FP A9 transistor SMD smd transistor a9
    Text: MITSUBISHI LSIs '97.3.21 M5M5V208FP,VP,RV,KV,KR -70L-W , -85L -W, -10L-W , -12L-W , -70LL-W, -85LL-W, -10LL-W, -12LL-W 2097152-BIT 262144-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M5V208 is 2,097,152-bit CMOS static RAM organized as


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    PDF M5M5V208FP -70L-W -10L-W -12L-W -70LL-W, -85LL-W, -10LL-W, -12LL-W 2097152-BIT 262144-WORD A16311 MARK 12LL diode A9 transistor SMD smd transistor a9

    SMD a16 Transistor

    Abstract: DQ7-21 MARK S2 smd transistor A8 M5M5V108CFP M5M5V108CRV M5M5V108CVP
    Text: MITSUBISHI LSIs M5M5V108CFP,VP,RV,KV,KR -70HI, -10HI, -70XI, -10XI 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V108CFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and


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    PDF M5M5V108CFP -70HI, -10HI, -70XI, -10XI 1048576-BIT 131072-WORD M5M5V108CVP SMD a16 Transistor DQ7-21 MARK S2 smd transistor A8 M5M5V108CRV

    MARK 12LL diode

    Abstract: M5M5V208FP m5m5v208 SMD a16 Transistor 2097152-BIT
    Text: MITSUBISHI LSIs '97.3.21 M5M5V208FP,VP,RV,KV,KR -70L , -85L, -10L , -12L, -70LL, -85LL, -10LL, -12LL 2097152-BIT 262144-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance


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    PDF M5M5V208FP -70LL, -85LL, -10LL, -12LL 2097152-BIT 262144-WORD M5M5V208 152-bit 144-words MARK 12LL diode SMD a16 Transistor 2097152-BIT

    2d2 smd transistor

    Abstract: smd transistor 2d7 SECME Transistor SMD 2d6 .33uf, 16v capacitor smd TRANSISTOR 1D5 25 pin d-type female oen make 74HC00DB 3H DIODE smd TDA8798
    Text: APPLICATION NOTE - TDA8798HL DUAL 8-BIT A/D CONVERTER WITH DPGA DEMONSTRATION BOARD AN/99055 Philips Semiconductors - TDA8798HL - Application Note AN99055 DEMONSTRATION BOARD APPLICATION NOTE - TDA8798HL DUAL 8-BIT A/D CONVERTER WITH DPGA DEMONSTRATION BOARD


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    PDF TDA8798HL AN/99055 AN99055 TDA8798HL TDA8798HL: 2d2 smd transistor smd transistor 2d7 SECME Transistor SMD 2d6 .33uf, 16v capacitor smd TRANSISTOR 1D5 25 pin d-type female oen make 74HC00DB 3H DIODE smd TDA8798

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


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    PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    Untitled

    Abstract: No abstract text available
    Text: SPIO-4 Precision Signal-Path Controller Board Users' Guide December 2010 Table of Contents 1.0 SPIO-4 System Overview . 3 1.0 SPIO-4 System Overview . 3


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    PDF

    transistor smd hq

    Abstract: No abstract text available
    Text: f u H v i u S E M I C O N D U C T O R A R R HM-65642 IS 8K X 8 Asynchronous CMOS StStiC RAM January 1992 Features Description • Full CMOS Design The HM-65642 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which


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    PDF HM-65642 HM-65642 80C86 80C88 transistor smd hq

    Untitled

    Abstract: No abstract text available
    Text: SB H A R R HM-65262 IS S E MI C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM January 1992 Pinouts Fast Access T im e .70/85n* Max Low Standby Current. 50nA Max


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    PDF HM-65262 70/85n*

    CDIP2-T28

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |nm Process (Leff= 0.6 (xm) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)


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    PDF 1x106rad 1x101 1x109 HX6256 28-Lead CDIP2-T28

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 p.m Process (Leff= 0.6 p,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)


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    PDF 1x106rad 1x101 1x109 HX6256 28-Lead GQG1711

    smd transistor marking H12

    Abstract: TRANSISTOR SMD MARKING CODE XI transistor smd marking JR smd transistor marking 7j SMD TRANSISTOR MARKING JF smd transistor marking JR smd marking h12 smd marking code KN TRANSISTOR SMD MARKING CODE sn GPS05093
    Text: SIEM EN S 5-V Low-Drop Fixed Voltage Regulator TLE 4269 Features • • • • • • • • • • Output voltage tolerance < ± 2 % Very low current consumption Early warning Reset output low doown to Vq = 1 V Overtemperature protection Reverse polarity proof


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    PDF Q67000-A9190 Qo700fi-AV1 P-DSO-20-6 35x45" 023SbGS smd transistor marking H12 TRANSISTOR SMD MARKING CODE XI transistor smd marking JR smd transistor marking 7j SMD TRANSISTOR MARKING JF smd transistor marking JR smd marking h12 smd marking code KN TRANSISTOR SMD MARKING CODE sn GPS05093