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    SMD DIODE MARKING DD Search Results

    SMD DIODE MARKING DD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    SMD DIODE MARKING DD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD mosfet MARKING code TJ

    Abstract: MOSFET SMD MARKING CODE SMD package code MU POWER MOSFET P1 smd marking code DM520 smd marking QT
    Text: Formosa MS SMD MOSFET FMBSS84 List List. 1 Package outline. 2 Features. 2


    Original     		PDF FMBSS84 MIL-STD-750D METHOD-1051 125OC 1000hrs. METHOD-1038 175OC METHOD-1031 SMD mosfet MARKING code TJ MOSFET SMD MARKING CODE SMD package code MU POWER MOSFET P1 smd marking code DM520 smd marking QT

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD MOSFET FMBSS84 List List. 1 Package outline. 2 Features. 2


    Original     		PDF FMBSS84 120sec 260sec 30sec DS-231142

    JESD22-A108C

    Abstract: 2N7002K
    Text: Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002K List List. 1 Package outline. 2


    Original     		PDF 2N7002K 1000hours JESD22-A108-C JESD22-B102-D 168hours JESD22-A102-C JESD22-A104-B 10min /10min JESD22-A108C 2N7002K

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS ESD N-Channel SMD MOSFET 2N7002K List List. 1 Package outline. 2 Features. 2


    Original     		PDF 2N7002K METHOD-1027 500hrs. MIL-STD-750D METHOD-1051 METHOD-1056 1000hrs. METHOD-1038

    Untitled

    Abstract: No abstract text available
    Text: BB172 VHF variable capacitance diode Rev. 2 — 3 December 2013 Product data sheet 1. Product profile 1.1 General description The BB172 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 SC-76 very small SMD plastic package.


    Original     		PDF BB172 BB172 OD323 SC-76)

    SOT-323

    Abstract: JESD22-A108-C JESD22-A108C Marking Code 72
    Text: Formosa MS SMD MOSFET 2N7002W List List. 1 Package outline. 2 Features. 2


    Original     		PDF 2N7002W JESD22-A108-C 1000hours JESD22-B102-D 168hours JESD22-A102-C 10min 10min JESD22-A104-B SOT-323 JESD22-A108-C JESD22-A108C Marking Code 72

    2N7002H

    Abstract: No abstract text available
    Text: Formosa MS N-Channel SMD MOSFET 2N7002 List List. 1 Package outline. 2 Features. 2


    Original     		PDF 2N7002 1000hours JESD22-A108-C JESD22-B102-D 168hours JESD22-A102-C JESD22-A104-B 10min /10min 2N7002H

    2N7002H

    Abstract: 2N7002-H RG 702 Diode smd diode 2n7002 marking code 2N7002 MARKING DIODE smd marking 702 JESD22-A108C JESD22-A108-C POWER MOSFET P1 smd marking code 2N7002 SMD marking
    Text: Formosa MS N-Channel SMD MOSFET 2N7002 List List. 1 Package outline. 2 Features. 2


    Original     		PDF 2N7002 JESD22-A108-C 1000hours JESD22-B102-D 168hours JESD22-A102-C 10min 10min JESD22-A104-B 2N7002H 2N7002-H RG 702 Diode smd diode 2n7002 marking code 2N7002 MARKING DIODE smd marking 702 JESD22-A108C JESD22-A108-C POWER MOSFET P1 smd marking code 2N7002 SMD marking

    4P04L04

    Abstract: IPP80P04P4L-04 4P04 IPI80P04P4L-04
    Text: IPB80P04P4L-04 IPI80P04P4L-04, IPP80P04P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 4.4 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80P04P4L-04 IPI80P04P4L-04, IPP80P04P4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80P04P4L-04 4P04L04 IPP80P04P4L-04 4P04

    SOT-323

    Abstract: No abstract text available
    Text: Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002KW List List. 1 Package outline. 2


    Original     		PDF 2N7002KW 120sec 260sec 30sec DS-251127 SOT-323

    SMD MARKING QG 6 PIN

    Abstract: smd diode 2n7002 marking code 2n7002 marking code RK RK sot-323 smd sot 323 diode code 14 2N7002KW
    Text: Formosa MS SMD MOSFET 2N7002KW List List. 1 Package outline. 2 Features. 2


    Original     		PDF 2N7002KW 120sec 260sec 30sec DS-251127 SMD MARKING QG 6 PIN smd diode 2n7002 marking code 2n7002 marking code RK RK sot-323 smd sot 323 diode code 14 2N7002KW

    Untitled

    Abstract: No abstract text available
    Text: IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.9 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB70P04P4L-08 4P04L08 IPI70P04P4L-08

    4P04L08

    Abstract: IPP70P04P4L-08 IPP80P04P4L-08 smd diode UM 08
    Text: IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.9 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB70P04P4L-08 IPI70P04P4L-08 IPP70P04P4L-08 4P04L08 IPP70P04P4L-08 IPP80P04P4L-08 smd diode UM 08

    110N06L

    Abstract: g3pf DIODE smd marking Ag PG-TO220-3 PG-TO263-3-2 MARKING G3 INFINEON SMD diode D94
    Text: IPB110N06L G OptiMOS Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature


    Original     		PDF IPB110N06L IPP110N06L PG-TO263-3-2 P-TO263-3-2 PG-TO220-3-1 110N06L 110N06L g3pf DIODE smd marking Ag PG-TO220-3 PG-TO263-3-2 MARKING G3 INFINEON SMD diode D94

    IEC61249-2-21

    Abstract: PG-TO220-3 070N06L
    Text: IPB070N06L G IPP070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature


    Original     		PDF IPB070N06L IPP070N06L IEC61249-2-21 PG-TO263-3 PG-TO220-3 070N06L IEC61249-2-21 PG-TO220-3 070N06L

    070N06L

    Abstract: PG-TO-220-3 PG-TO220-3 g2ns 070N0 D53A
    Text: IPB070N06L G IPP070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMD version ID 60 V 6.7 m: 80 A • 175 °C operating temperature


    Original     		PDF IPB070N06L IPP070N06L PG-TO263-3 PG-TO220-3 070N06L 070N06L PG-TO-220-3 PG-TO220-3 g2ns 070N0 D53A

    marking D78

    Abstract: smd diode marking 78A
    Text: IPB110N06L G OptiMOS Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature


    Original     		PDF IPB110N06L IPP110N06L PG-TO263-3-2 P-TO263-3-2 110N06L P-TO220-3-1 marking D78 smd diode marking 78A

    marking D53

    Abstract: No abstract text available
    Text: IPB085N06L G OptiMOS Power-Transistor IPP085N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 8.5 mΩ 80 A • 175 °C operating temperature


    Original     		PDF IPB085N06L IPP085N06L P-TO263-3-2 085N06L P-TO220-3-1 marking D53

    3P03L04

    Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
    Text: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V


    Original     		PDF IPI80P03P3L-04 IPP80P03P3L-04 IPB80P03P3L-04 IPP80P03P3L-04 3P03L04 BIPP80P03P3L-04, 3P03L04 ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 package to220 DIODE smd marking code UM 31

    4P0409

    Abstract: IPB70P04P4-09 IPP70P04P4-09 smd diode UM 09 d70a D4104 gd 09 PG-TO263-3
    Text: IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 9.1 mW ID -70 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI70P04P4-09 4P0409 IPP70P04P4-09 smd diode UM 09 d70a D4104 gd 09 PG-TO263-3

    070N06L

    Abstract: DIODE smd marking Ag PG-TO220-3 070N0
    Text: IPB070N06L G IPP070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 7 mΩ 80 A • 175 °C operating temperature


    Original     		PDF IPB070N06L IPP070N06L PG-TO263-3 PG-TO220-3 070N06L 070N06L DIODE smd marking Ag PG-TO220-3 070N0

    Untitled

    Abstract: No abstract text available
    Text: bbS3R31 DDS7QSS T4b * A P X b'lE » N AMER PHILIPS/DISCRETE Philips Semiconductors Preliminary specification 1PS184 High speed double diode FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application. CONDITIONS


    OCR Scan     		PDF bbS3R31 1PS184

    Untitled

    Abstract: No abstract text available
    Text: fc.bSB'm DDEMBD? bfifi • APX Philips Semiconductors Product specification N AHER PHILIPS/DISCRETE b7E D Schottky barrier diodes BAS70-07 QUICK REFERENCE DATA FEATURES • Low leakage current SYMBOL • Low turn-on and high breakdown voltage Vr continuous reverse voltage


    OCR Scan     		PDF BAS70-07 BAS70-70

    1ff TRANSISTOR SMD MARKING CODE

    Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
    Text: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369


    OCR Scan     		PDF DDDQS11 OT-23 350mW CMPT918 CMPT2222A CMPT2369 CMPT2484 CMPT2907A CMPT3640 CMPT3904 1ff TRANSISTOR SMD MARKING CODE smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p