Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SMD DIODE 200A Search Results

    SMD DIODE 200A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    SMD DIODE 200A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D20S30

    Abstract: SDP20S30 Q67040-S4374 Q67040-S4419 S20S30 SDB20S30 smd diode marking code UJ diode smd marking code 435 300V Schottky Diode smd
    Text: SDP20S30 SDB20S30 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide 1 • No reverse recovery 2 3 • No temperature influence on Qc 23 IF 2x10 P-TO220-3.SMD the switching behavior


    Original     		PDF SDP20S30 SDB20S30 P-TO220-3 P-TO220-3-1. Q67040-S4419 Q67040-S4374 D20S30 SDP20S30 Q67040-S4374 Q67040-S4419 S20S30 SDB20S30 smd diode marking code UJ diode smd marking code 435 300V Schottky Diode smd

    Untitled

    Abstract: No abstract text available
    Text: Comchip Efficient Fast Recovery Rectifiers SMD Diode Specialist CEF860LT-G Reverse Voltage: 600 V Forward Current: 8.0 A RoHS Device Features TO-220AC -Soft recovery characteristic. 0.108 2.75 -Low forward voltage. -Low recovery loss. 0.413(10.50) 0.374( 9.50)


    Original     		PDF CEF860LT-G O-220AC O-220AC, QW-BE011 8LFR060T

    smd marking code 8A

    Abstract: No abstract text available
    Text: Comchip General Purpose Rectifiers SMD Diode Specialist CGR860T-G Reverse Voltage: 600 V Forward Current: 8.0 A RoHS Device Features TO-220AC -Soft recovery characteristic. 0.108 2.75 -Low forward voltage. -Low recovery loss. 0.413(10.50) 0.374( 9.50) 0.153(3.90)


    Original     		PDF CGR860T-G O-220AC O-220AC, 50eristics QW-BG020 8FR060T smd marking code 8A

    CGR860T-G

    Abstract: General Purpose Rectifier
    Text: Comchip General Purpose Rectifiers SMD Diode Specialist CGR860T-G Reverse Voltage: 600 V Forward Current: 8.0 A RoHS Device Features TO-220AC -Soft recovery characteristic. 0.108 2.75 -Low forward voltage. -Low recovery loss. 0.413(10.50) 0.374( 9.50) 0.153(3.90)


    Original     		PDF CGR860T-G O-220AC O-220AC, QW-BG020 8FR060T CGR860T-G General Purpose Rectifier

    IC 555

    Abstract: 50MT060ULSTA 50MT060ULSA
    Text: Bulletin I27191 02/05 50MT060ULSA 50MT060ULSTA "LOW SIDE CHOPPER" IGBT MTP Ultrafast Speed IGBT Features • Gen. 4 Ultrafast Speed IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMD Thermistor NTC


    Original     		PDF I27191 50MT060ULSA 50MT060ULSTA E78996 12-Mar-07 IC 555 50MT060ULSTA 50MT060ULSA

    D20S30

    Abstract: Q67040-S4419 Q67040-S4374 S20S30 SDB20S30 SDP20S30
    Text: SDP20S30 SDB20S30 Preliminary data Silicon Carbide Schottky Diode  Revolutionary semiconductor Product Summary material - Silicon Carbide  No reverse recovery Qc 23  No temperature influence on IF 2x10 P-TO220-3.SMD the switching behavior V 300 VRRM  Switching behavior benchmark


    Original     		PDF SDP20S30 SDB20S30 P-TO220-3 P-TO220-3-1. Q67040-S4419 D20S30 D20S30 Q67040-S4419 Q67040-S4374 S20S30 SDB20S30 SDP20S30

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I27191 02/05 50MT060ULSA 50MT060ULSTA "LOW SIDE CHOPPER" IGBT MTP Ultrafast Speed IGBT Features • Gen. 4 Ultrafast Speed IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMD Thermistor NTC


    Original     		PDF I27191 50MT060ULSA 50MT060ULSTA E78996 08-Mar-07

    IC 555

    Abstract: IRF E78996 555 IC 50MT060ULSA 50MT060ULSTA
    Text: Bulletin I27191 02/05 50MT060ULSA 50MT060ULSTA "LOW SIDE CHOPPER" IGBT MTP Ultrafast Speed IGBT Features • Gen. 4 Ultrafast Speed IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMD Thermistor NTC


    Original     		PDF I27191 50MT060ULSA 50MT060ULSTA E78996 IC 555 IRF E78996 555 IC 50MT060ULSA 50MT060ULSTA

    3 watt 70v zener diode

    Abstract: inkjet print head interface K784P
    Text: Inkjet Printer Table of Contents ACCESS SENSORS, Door Sensor. 3 CONTROL BOARD, DSP


    Original     		PDF 00V-600V; DO-220AA V-540V; V-440V DO-204AL DO-41) DO-204AC DO-15) 3 watt 70v zener diode inkjet print head interface K784P

    vishay 1N4007 DO-214AC

    Abstract: 7 Segment common cathode MBR360 smd diode DGP30 05B2S SMD DIODE UF4007 1N4007 DO-214BA VS-30BQ100PBF 1N5822 SMD 1N4007 MINI MELF
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . V I S HAY INTERTE C HNOLO G Y, IN C . diodes RECTIFIERS Selector Guide Bridge Rectifiers Fast Recover y Rectifier s Schottky Rectifiers Standard Rectifiers Ultrafast Recover y Rectifiers w w w. v i s h a y. c o m


    Original     		PDF VMN-SG2125-1009 vishay 1N4007 DO-214AC 7 Segment common cathode MBR360 smd diode DGP30 05B2S SMD DIODE UF4007 1N4007 DO-214BA VS-30BQ100PBF 1N5822 SMD 1N4007 MINI MELF

    1N4007 MINI MELF

    Abstract: No abstract text available
    Text: LCD Television Table of Contents BACKLIGHT INVERTER, Lighting Ignitor. 3 BACKLIGHT INVERTER, MOSFET Driver. 4


    Original     		PDF 250ns DO-220AA V-540V; V-440V; DO-204AL DO-41) DO-204AC 1N4007 MINI MELF

    vishay 1N4007 DO-214AC

    Abstract: VS30CTQ100-N3 MBRF2035CT vsb3200 40MT160K PB401 16CTU04 v80100 UGF5 10ETF10
    Text: V i s h ay I n terte c h n o l o g y, I n c . 19 Rectifiers - Worldwide Leader in Power Rectifiers AND TEC O L OGY INNOVAT I N HN Rectifiers O 62-2012 Featured Products • • • • • Bridge Rectifiers Fast Recovery Rectifiers Schottky Rectifiers Standard Rectifiers


    Original     		PDF VMN-SG2125-1208 DOCUMENT-4-9337-2727 vishay 1N4007 DO-214AC VS30CTQ100-N3 MBRF2035CT vsb3200 40MT160K PB401 16CTU04 v80100 UGF5 10ETF10

    bridge rectifier 24V AC to 24v dc

    Abstract: 1N5408 smd diodes GSIB1560
    Text: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4


    Original     		PDF 250ns; DO-204AL DO-41) DO-220AA V-540V; V-440V bridge rectifier 24V AC to 24v dc 1N5408 smd diodes GSIB1560

    Selector Guide

    Abstract: gl112 VS-20ETS08F SS10P2CL
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . Rectifiers - Worldwide Leader in Power Rectifiers Rectifiers FEATURED PRODUCTS • • • • • Bridge Rectifiers Fast Recovery Rectifiers Schottky Rectifiers Standard Rectifiers Ultrafast Recovery Rectifiers


    Original     		PDF VMN-SG2125-1407 DISC9337-2726 Selector Guide gl112 VS-20ETS08F SS10P2CL

    4N0402

    Abstract: IPB90N04S4-02 IPP90N04S4-02 PG-TO263-3-2 D-90A ipi90n04s4-02 d90a
    Text: IPB90N04S4-02 IPI90N04S4-02, IPP90N04S4-02 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 2.1 mΩ ID 90 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		PDF IPB90N04S4-02 IPI90N04S4-02, IPP90N04S4-02 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0402 IPI90N04S4-02 4N0402 IPB90N04S4-02 IPP90N04S4-02 PG-TO263-3-2 D-90A ipi90n04s4-02 d90a

    3P03L04

    Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
    Text: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V


    Original     		PDF IPI80P03P3L-04 IPP80P03P3L-04 IPB80P03P3L-04 IPP80P03P3L-04 3P03L04 BIPP80P03P3L-04, 3P03L04 ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 package to220 DIODE smd marking code UM 31

    Ericsson Installation guide for RBS 6000

    Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF 304X264X130 CL200 TC554001FI-85L TC554001FTL-70 BMSKTOPAS900 BMSKTOPAS870 10/100TX 13X76 35X100 19X89 Ericsson Installation guide for RBS 6000 ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC

    SMD DIODE 200A

    Abstract: Diode smd 86 SMD diode NC 200a smd MOSFET 400 A smd mosfet 400v 58nC TR2050 diode LMP KQS4901
    Text: IC IC SMD Type 400V Dual N-Channel MOSFET KQS4901 Features 0.45 A, 400 V. RDS ON = 4.2 @ VGS = 10 V Low gate charge (typical 5.8nC) Low Crss (typical 5.0 Pf) Fast switching speed lmproved dv/dt capability Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage


    Original     		PDF KQS4901 SMD DIODE 200A Diode smd 86 SMD diode NC 200a smd MOSFET 400 A smd mosfet 400v 58nC TR2050 diode LMP KQS4901

    2N04L03

    Abstract: SPB80N04S2L-03 SPP80N04S2L-03
    Text: SPP80N04S2L-03 SPB80N04S2L-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version • Logic Level ID •=175°C operating temperature P-TO263-3-2 40 V 3.1 mΩ 80 A P-TO220-3-1


    Original     		PDF SPP80N04S2L-03 SPB80N04S2L-03 P-TO263-3-2 P-TO220-3-1 Q67040-S4261 Q67040-S4262 2N04L03 SPB80N04S2L-03 SPP80N04S2L-03

    Untitled

    Abstract: No abstract text available
    Text: SPP100N08S2L-07 SPB100N08S2L-07 OptiMOS Power-Transistor Product Summary Feature 75 VDS  N-Channel RDS on  Enhancement mode max. SMD version ID  Logic Level P- TO263 -3-2 175°C operating temperature V 6.5 m 100 A P- TO220 -3-1  Avalanche rated  dv/dt rated


    Original     		PDF SPP100N08S2L-07 SPB100N08S2L-07 SPP100N08S2L-07 Q67060-S6045 SPB100N08S2L-07 Q67060-S6047 PN08L07 BSPP100N08S2L-07 BSPB100N08S2L-07,

    10n03l

    Abstract: 10N03 smd diode 36A IPB10N03L diode 73a IPP10N03L IPB10N03L SMD Q67042-S4040
    Text: IPP10N03L IPB10N03L Preliminary data OptiMOS =Buck converter series Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) VDS 30 RDS(on) max. SMD version 8.9 m ID 73 A P-TO263-3-2


    Original     		PDF IPP10N03L IPB10N03L P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67042-S4040 10N03L P-TO263-3-2 10n03l 10N03 smd diode 36A IPB10N03L diode 73a IPP10N03L IPB10N03L SMD Q67042-S4040

    2n08l07

    Abstract: 67a smd 2N08L07 POWER "2N08L07" smd diode 67A smd code "67A" 2n08l07 marking diode um 67A Q67060-S6016 smd 67a
    Text: SPP80N08S2L-07 SPB80N08S2L-07 OptiMOS =Power-Transistor Product Summary Feature 75 VDS  N-Channel RDS on  Enhancement mode max. SMD version ID  Logic Level P- TO263 -3-2 175°C operating temperature V 6.8 m 80 A P- TO220 -3-1  Avalanche rated  dv/dt rated


    Original     		PDF SPP80N08S2L-07 SPB80N08S2L-07 Q67060-S6015 Q67060-S6016 2N08L07 BSPP80N08S2L-07 BSPB80N08S2L-07, 67a smd 2N08L07 POWER "2N08L07" smd diode 67A smd code "67A" 2n08l07 marking diode um 67A Q67060-S6016 smd 67a

    pn06l05

    Abstract: marking code br 37 SMD
    Text: SPP100N06S2L-05 SPB100N06S2L-05 OptiMOS =Power-Transistor Product Summary Feature 55 VDS  N-Channel RDS on  Enhancement mode max. SMD version ID  Logic Level P- TO263 -3-2 175°C operating temperature V 4.4 m 100 A P- TO220 -3-1  Avalanche rated  dv/dt rated


    Original     		PDF SPP100N06S2L-05 SPB100N06S2L-05 Q67060-S6043 Q67060-S6042 PN06L05 BSPP100N06S2L-05 BSPB100N06S2L-05, marking code br 37 SMD

    E25 SMD diode

    Abstract: No abstract text available
    Text: Preliminary Data Sheet High Voltage IGBT with Diode IXSX35N120AU1 IXSX35N120AU1S CES C25 Combi Pack Short Circuit SOA Capability CE SAT 1200 V 70 A 4V PLUS TO-247 SMD (IXSX35N120AU1S) Symbol Test Conditions vCES vCGR v GES Tj = 25°C to 150°C; RGE = 1 Mi2


    OCR Scan     		PDF IXSX35N120AU1 IXSX35N120AU1S O-247TM IXSX35N120AU1S) O-247TM IXSX35N12 IXSX35N12QAU1 E25 SMD diode