N681622
Abstract: W681388 TRANSISTOR Bf 310n N681387DG N681387 GKDF QFN-48 thermal resistance N681386 w684386 n681622yg
Text: N681386/87 Single Programmable Extended Codec/SLCC 1. DESCRIPTION The N681386/87, implements a single channel FXS telephone line interface optimized for short loop applications. It integrates SLCC Subscriber Line Control Circuit functionality with a programmable CODEC and a DC/DC controller.
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N681386/87
N681386/87,
16-bit
N681622
W681388
TRANSISTOR Bf 310n
N681387DG
N681387
GKDF
QFN-48 thermal resistance
N681386
w684386
n681622yg
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DP5Z2MW16PA3
Abstract: DP5Z2MW16PH3 DP5Z2MW16PI3 DP5Z2MW16PJ3 DP5Z2MW16PY3
Text: 2Mx16, 120 - 200ns, STACK/PGA 30A161-22 A 32 Megabit FLASH EEPROM DP5Z2MW16Pn3 PRELIMINARY DESCRIPTION: SLCC Stack The DP5Z2MW16Pn3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip
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2Mx16,
200ns,
30A161-22
DP5Z2MW16Pn3
50-pin
64-Megabits
DP5Z2MW16Pn3
DP5Z2MW16PA3
DP5Z2MW16PH3
DP5Z2MW16PI3
DP5Z2MW16PJ3
DP5Z2MW16PY3
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Untitled
Abstract: No abstract text available
Text: SLCC CNP www.vishay.com Vishay Sfernice Hermetic, 50 Mil Pitch, Leadless Chip Thin Film Resistor Networks FEATURES • High stability ultrafilm (0.05 % at 1000 h at + 70 °C under Pn) • Custom available (CNP) • Low noise < 35 dB • SMD • Hermetic package
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2002/95/EC
MIL-PRF-83401
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SLCC CNP www.vishay.com Vishay Sfernice Hermetic, 50 Mil Pitch, Leadless Chip Thin Film Resistor Networks FEATURES • High stability ultrafilm (0.05 % at 1000 h at + 70 °C under Pn) • Custom available (CNP) • Low noise < - 35 dB • SMD • Hermetic package
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MIL-PRF-83401
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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R0005
Abstract: SLCC20
Text: SLCC Vishay Sfernice Hermetic, 50 Mil Pitch, Leadless Chip Resistor Networks FEATURES • High stability Ultrafilm 0.05 % at 1000 hours at 70 °C under Pn • Low noise < 35 dB RoHS COMPLIANT • Hermetic package Actual Size TYPICAL PERFORMANCE Capable of meeting the characteristics of MIL-PRF-83401
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MIL-PRF-83401
08-Apr-05
R0005
SLCC20
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DP5Z2MK16PA3
Abstract: DP5Z2MK16PH3 DP5Z2MK16PI3 DP5Z2MK16PJ3 DP5Z2MK16PY
Text: 2Mx16, 120 - 200ns, STACK/PGA 30A161-02 A 32 Megabit FLASH EEPROM DP5Z2MK16Pn3 PRELIMINARY DESCRIPTION: The DP5Z2MK16n3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC . Available unleaded, straight leaded, ‘’J’’ leaded, gullwing
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2Mx16,
200ns,
30A161-02
DP5Z2MK16Pn3
DP5Z2MK16n3
50-pin
32-Megabits
DP5Z2MK16PY
DP5Z2MK16Pn3
30A161-32
DP5Z2MK16PA3
DP5Z2MK16PH3
DP5Z2MK16PI3
DP5Z2MK16PJ3
DP5Z2MK16PY
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SLCC Series
Abstract: DP5Z2MX16PA3 DP5Z2MX16PH3 DP5Z2MX16PI3 DP5Z2MX16PJ3 DP5Z2MX16PY
Text: 2Mx16, 120 - 200ns, STACK/PGA 30A161-02 1 32 Megabit FLASH EEPROM DP5Z2MX16Pn3 PRELIMINARY DESCRIPTION: The DP5Z2MX16Pn3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC . Available unleaded, straight leaded, ‘’J’’ leaded, gullwing
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2Mx16,
200ns,
30A161-02
DP5Z2MX16Pn3
50-pin
32-Megabits
DP5Z2MX16PY
DP5Z2MX16Pn3
DP5Z2MX16PY/PI3/PH3/PJ3/DP5Z2MX8PA3
SLCC Series
DP5Z2MX16PA3
DP5Z2MX16PH3
DP5Z2MX16PI3
DP5Z2MX16PJ3
DP5Z2MX16PY
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SMD A06
Abstract: R0005 20A06 A03 SMD
Text: SLCC CNP Vishay Sfernice Hermetic, 50 Mil Pitch, Leadless Chip Resistor Networks FEATURES • High stability ultrafilm (0.05 % at 1000 h at + 70 °C under Pn) • Custom available (CNP) • Low noise < 35 dB • SMD • Hermetic package Actual Size Capable of meeting the characteristics of MIL-PRF-83401
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MIL-PRF-83401
2002/95/EC
18-Jul-08
SMD A06
R0005
20A06
A03 SMD
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DP5Z2ME16PA3
Abstract: DP5Z2ME16PH3 DP5Z2ME16PI3 DP5Z2ME16PJ3 DP5Z2ME16PY
Text: 2Mx16, 120 - 200ns, STACK/PGA 30A161-02 A 32 Megabit FLASH EEPROM DP5Z2ME16Pn3 PRELIMINARY DESCRIPTION: The DP5Z2ME16Pn3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC . Available unleaded, straight leaded, ‘’J’’ leaded, gullwing
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2Mx16,
200ns,
30A161-02
DP5Z2ME16Pn3
50-pin
32-Megabits
DP5Z2ME16PY
DP5Z2ME16Pn3
30A161-42
DP5Z2ME16PA3
DP5Z2ME16PH3
DP5Z2ME16PI3
DP5Z2ME16PJ3
DP5Z2ME16PY
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20A06
Abstract: R0005
Text: SLCC Vishay Sfernice Hermetic, 50 Mil Pitch, Leadless Chip Resistor Networks FEATURES • High stability ultrafilm 0.05 % at 1000 h at + 70 °C under Pn • Low noise < 35 dB RoHS COMPLIANT • Hermetic package Actual Size TYPICAL PERFORMANCE Capable of meeting the characteristics of MIL-PRF-83401
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MIL-PRF-83401
18-Jul-08
20A06
R0005
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A03-A06
Abstract: No abstract text available
Text: SLCC CNP Vishay Sfernice Hermetic, 50 Mil Pitch, Leadless Chip Resistor Networks FEATURES • High stability ultrafilm (0.05 % at 1000 h at + 70 °C under Pn) • Custom available (CNP) • Low noise < 35 dB • SMD • Hermetic package Actual Size Capable of meeting the characteristics of MIL-PRF-83401
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2002/95/EC
MIL-PRF-83401
12hay
11-Mar-11
A03-A06
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DP5Z1MM8NKH3
Abstract: 00FIH
Text: 1Mx8, 120 - 200ns, STACK/PGA 30A189-01 A 8 Megabit FLASH EEPROM DP5Z1MM8NKY/I3/H3/J3/DP5Z1MX8NKA3 PRELIMINARY DESCRIPTION: The DP5Z1MM8NKY/I3/H3/J3/DP5Z1MX8NKA3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’
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200ns,
30A189-01
50-pin
DP5Z1MM8NKH3
00FIH
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DP5Z1MM16PH3
Abstract: DP5Z1MM16PI3 DP5Z1MM16PJ3 DP5Z1MM16PY DP5Z1MW16PA3
Text: 1Mx16, 120 - 200ns, STACK/PGA 30A162-21 A 16 Megabit FLASH EEPROM DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 PRELIMINARY DESCRIPTION: The DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’
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1Mx16,
200ns,
30A162-21
DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3
50-pin
16-Megabits
DP5Z1MM16PY
DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3
DP5Z1MM16PH3
DP5Z1MM16PI3
DP5Z1MM16PJ3
DP5Z1MM16PY
DP5Z1MW16PA3
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC MICROSYSTEMS 64 Megabit FLASH EEPROM DP5Z4MX16Pn3 PRELIMINARY DESCRIPTION: The DP5Z4MX16Pn3 "SLC C " devices are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC . Available unleaded, straight leaded, "J" leaded, gullwing
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DP5Z4MX16Pn3
50-pin
64-Megabits
DP5Z4MX16Pn3
120ns
150ns
200ns
30A161
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC 64 Megabit FLASH EEPROM DP5Z2MW32PV3 MICROSYSTEMS PRELIMINARY DESCRIPTION: The DP5Z2M W 32PV3 VERSA -STA CK module is a revolutionary new memory subsystem using Dense-Pac Microsystems ceram ic Stackable Leadless Chip Carriers SLCC mounted on a co-fired ceramic substrate. It
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DP5Z2MW32PV3
32PV3
120ns
200ns
30A180-12
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC 32 Megabit FLASH EEPROM DP5Z2MW 16Pn3 MICROSYSTEMS PRELIMINARY DESCRIPTION: The DP5Z2M W 16Pn3 " S L C C " devices are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC . Available unleaded, straight leaded, "J" leaded, gullwing
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OCR Scan
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16Pn3
50-pin
64-Megabits
16Pn3
120ns
150ns
200ns
30A161-22
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC MI C R O S Y S T E MS 32 Megabit FLASH EEPROM DP5Z1MW32PV3 PRELIMINARY DESCRIPTION: The DP5Z1MW32PV3 "VERSA-STACK" module is a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired ceramic substrate. It
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DP5Z1MW32PV3
DP5Z1MW32PV3
32PV3
120ns
150ns
200ns
30A180-11
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1230A1
Abstract: No abstract text available
Text: 16 Megabit FLASH EEPROM D E N S E - P A C M I C K OS V S T M S \í DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 AD VAN CED IN FO RM ATIO N DESCRIPTION: The DP5Z1MM16PY/Í3/H3/J3/DP5Z1MW16PA3 "SLCC" devices are a revolutionary new memory subsystem using Dense-Pac Microsystems'
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DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3
DP5Z1MM16PY/
3/H3/J3/DP5Z1MW16PA3
50-pin
16-Megabits
DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3
120ns
150ns
200ns
30A162-21
1230A1
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC 32 Megabit FLASH EEPROM DP5Z2MX16Nn3 M I C R O S Y S T I:. M S PRELIM IN A R Y D ESC RIPTIO N : The DP5Z2MX16Nn3 "S LC C " devices are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC . Available unleaded, straight leaded, " J " leaded, gullwing
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OCR Scan
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PDF
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DP5Z2MX16Nn3
50-pin
32-Megabits
DP5Z2MX16Nn3
120ns
200ns
30A162-04
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC 32 Megabit FLASH EEPROM DP5Z2MX16Nn3 MI C R C HY STEMS PRELIMINARY D E S C R IP T IO N : The D P 5Z 2 M X 16N n3 "S LC C " devices are a re volution ary new m em ory subsystem using D ensePac M icrosystem s' ceram ic Stackable Lead less C hip Carriers SLCC . A vailable unleaded, straight leaded, "J " leaded, g u llw in g
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OCR Scan
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50-pin
120ns
150ns
200ns
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC \í M I C K OS V S T 32 Megabit FLASH EEPROM DP5Z2ME16Pn3 M S PRELIMINARY DESCRIPTION: The D P 5 Z 2 M E 1 6 P n 3 "S L C C " devices are a revolutionary n e w m em ory subsystem using Dense-Pac M icrosystem s' ceram ic Stackable Lead less C hip
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DP5Z2ME16Pn3
200ns
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16PI3
Abstract: No abstract text available
Text: DENSE-PAC M í C R o s v s r 32 Megabit FLASH EEPROM \¿ M s D P5Z2M W 16Pn3 ADVANCED INFORMATION DESCRIPTION: The D P5Z2M W 16Pn3 "S L C C ” devices are a revolutionary new memory subsystem using Dense-Pac Microsystems'ceramic Stackable LeadlessChip Carriers 5LCC . Available unleaded, straight leaded, " J " leaded, gullwing
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OCR Scan
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16Pn3
50-pin
64-Megabits
DP5Z2MW16Pn3
120ns
150ns
200ns
16PI3
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30A18
Abstract: No abstract text available
Text: 8 Megabit FLASH EEPROM D EN SE-PA C DP5Z1MM8NKY/Í3/H3/J3/DP5Z1MX8NKA3 M I C K OS V S T \í M S PRELIM INARY D E SC R IP T IO N : The D P5Z1MM8NKY/Í3/H3/J3/DP5Z1MX8NKA3 "S L C C " devices are a revolutionary new memory subsystem using Dense-Pac Microsystems'
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OCR Scan
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50-pin
150ns
200ns
30A159-01
30A18
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