Untitled
Abstract: No abstract text available
Text: SERIES 500SP NON-INDUCTIVE BULK CERAMIC SLAB RESISTORS KANTHAL GLOBAR Series 500SP Non-Inductive Bulk Ceramic Slab Resistors provide high power and energy dissipation in a compact size. Proprietary bulk ceramic “SP” material is used in a simple, efficient design that permits energy to be uniformly absorbed throughout the
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500SP
500SP
877-GLOBAR-2
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Untitled
Abstract: No abstract text available
Text: SERIES 500SP NON-INDUCTIVE BULK CERAMIC SLAB RESISTORS KANTHAL GLOBAR Series 500SP Non-Inductive Bulk Ceramic Slab Resistors provide high power and energy dissipation in a compact size. Proprietary bulk ceramic “SP” material is used in a simple, efficient design that permits energy to be uniformly absorbed throughout the
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500SP
500SP
877-GLOBAR-2
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KANTHAL GLOBAR
Abstract: kanthal kanthal data sheet 502SP 504SP101KG1
Text: SERIES 500SP NON-INDUCTIVE BULK CERAMIC SLAB RESISTORS KANTHAL GLOBAR Series 500SP Non-Inductive Bulk Ceramic Slab Resistors provide high power and energy dissipation in a compact size. Proprietary bulk ceramic “SP” material is used in a simple, efficient design that permits energy to be uniformly absorbed throughout the
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500SP
500SP
877-GLOBAR-2
KANTHAL GLOBAR
kanthal
kanthal data sheet
502SP
504SP101KG1
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Untitled
Abstract: No abstract text available
Text: KANTHAL Globar Non-Inductive GLOBAR Bulk Ceramic Power Resistors A Sandvik Company formerly Cesiwid Non-inductive bulk ceramic construction for uniform distribution of energy throughout resistor body. No film or wire to fail. Choose Type SP for great A-C power
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Slab resistors
Abstract: 503AS KANTHAL GLOBAR kanthal
Text: Series 500AS Resistance Range Average Power @ Peak* Energy @ Peak* Voltage* Type Length L (Ohms) 40°C Amb. (Watts) 40°C Amb. (Joules) (Volts) 502AS 2" (51 mm) 5 –1,200 12 1,500 8,500 Resistor Weight (Grams) 16 503AS 3" (76 mm) 9 – 2,200 18 2,700 16,000
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500AS
502AS
503AS
504AS
505AS
506AS
507AS
508AS
509AS
510AS
Slab resistors
503AS
KANTHAL GLOBAR
kanthal
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12C508
Abstract: P12C508 pic12c508 source 3004 diode 1N4734A PIC12C508 MPASM code macro digital counter sensor ZENER DIODE 47
Text: Sensor Interface Analog Input Through One Digital Pin Author: Kirill Yelizarov V. Moscow Power Engineering Institute Moscow, Russia email: [email protected] OVERVIEW Since most detectors are analog type, an analog to digital converter ADC is needed to measure its data by
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PIC12C508)
DS40160A/3
004-page
12C508
P12C508
pic12c508 source
3004 diode
1N4734A
PIC12C508
MPASM code macro
digital counter sensor
ZENER DIODE 47
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eia 3216-12
Abstract: multilayer ceramic capacitor capacitor 1000uf electrolyte NbO2 120C avx tantalum capacitor 6032 weibull test data
Text: Low ESR and Low Profile Technology on Niobium Oxide S. Zedníček, Z. Sita, T.Zedníček AVX Czech Republic s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic Phone: +420 467 558 111 Fax: +420 467 558 128 C. McCracken, W. A. Millman. AVX Limited, Long Road, Paignton,
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220uF,
eia 3216-12
multilayer ceramic capacitor
capacitor 1000uf electrolyte
NbO2
120C
avx tantalum capacitor 6032
weibull test data
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Al2O3 heat transfer coefficient
Abstract: 2512 resistor
Text: Understanding The Basic Thermal Properties Of SMT Devices By Scott B Durgin Principal Engineer International Manufacturing Services, Inc. IMS Introduction Ensuring optimal RF performance (that is, mechanical, thermal and electrical performance) of a surface-mount technology (SMT) ceramic device requires the careful
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Untitled
Abstract: No abstract text available
Text: KANTHAL GLOBAR A S a n d v ik C o m p a n y SERIES 500SP NON-INDUCTIVE BULK CERAMIC SLAB RESISTORS Series 500SP Non-Inductive Bulk Ceramic Slab Resistors from CESIWID provide high power and energy dissipation in a compact size. Proprietary bulk ceramic “SP” material is used in a simple, yet
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500SP
500SP
C-1005
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Untitled
Abstract: No abstract text available
Text: KANTHAL GLOBAR SERIES 500SP NON-INDUCTIVE BULK CERAMIC SLAB RESISTORS CESIS00017 Series 500SP Non-Inductive Bulk Ceramic Slab Resistors provide high power and energy dissipation in a compact size. Proprietary bulk ceramic “SP” material is used in a simple, efficient design that permits energy to be uniformly absorbed throughout the
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500SP
CESIS00017
500SP
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KA555
Abstract: KA555D
Text: KA555/I SINGLE TIMER SINGLE TIMER The KA55S/I Is a highly slab « controller capable of producing accurals timing pulses. W ith monostable operation, the time delay Is controlled by one external and one capacitor. With astable operation, the frequency and duty cycle are accurately controlled with two external resistors and
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KA555/I
KA55S/I
200mA)
KA555
KA555D
KA555I
KAS55ID
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor LTE21009R FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors PIN • Self-aligned process entirely ion implanted and gold sandwich metallization • optimum temperature profile
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OT440A
LTE21009R
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LTE21009R
Abstract: SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor LTE21009R FEATURES PINNING - SOT44QA • Diffused emitter ballasting resistors PIN • Self-aligned process entirely ion implanted and gold sandwich metallization • optimum temperature profile
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LTE21009R
OT440A
OT440A.
LTE21009R
SC15
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor LVE21050R PINNING - SOT445A FEATURES • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR PIN DESCRIPTION 1 • Self-aligned process entirely ion implanted
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OT445A
LVE21050R
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PLB16006U
Abstract: No abstract text available
Text: 3 3 ^ Philips Semiconductors NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL FEATURES Input matching cell allows an easier design of circuits Diffused emitter ballasting resistors providing excellent current sharing and withstanding
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FO-229
PLB16006U
711iQfi2ti
PLB16006U
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TRANSISTOR MARKING CODE NM
Abstract: marking code m2 transistor LV2327E40R SC15 marking M2 NPN microwave transistor 03 2327E40R low voltage power transistor
Text: Philips Semiconductors Product specification NPN microwave power transistor LV2327E40R FEATURES QUICK REFERENCE DATA • Interdigitated structure provides high emitter efficiency class A circuit. • Diffused emitter ballasting resistors providing excellent current sharing
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LV2327E40R
OT445B
OT445B.
TRANSISTOR MARKING CODE NM
marking code m2 transistor
LV2327E40R
SC15
marking M2 NPN
microwave transistor 03
2327E40R
low voltage power transistor
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K 3053 TRANSISTOR
Abstract: k 246 transistor
Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 p,s pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness
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R02731B10W
0CH3C54
K 3053 TRANSISTOR
k 246 transistor
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erie capacitor
Abstract: PTB23002U SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Very high power gain • Internal input prematching network • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer
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PTB23002U
OT440A
OT44QA.
erie capacitor
PTB23002U
SC15
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transistor Common Base amplifier
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES PZB16035U PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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OT443A
PZB16035U
transistor Common Base amplifier
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 us pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness
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R02731B10W
0CH3CI54
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 us pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness
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R02731B50W
711002b
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PZ1418B15U
Abstract: PZ1418B30U SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor PZ1418B15U FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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PZ1418B15U
PZ1418B30U.
OT443A.
PZ1418B15U
PZ1418B30U
SC15
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES PZ1418B15U PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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PZ1418B30U.
OT443A
PZ1418B15U
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Microwave power transistor PLB16004U FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors improve excellent current sharing and withstanding a high VSWR Microwave performance up to T mb = 25 °C in a common base class C
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PLB16004U
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