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    SL 100 POWER TRANSISTOR Search Results

    SL 100 POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SL 100 POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SPP70N05L

    Abstract: Q67040-S4000-A2 sl diode
    Text: BUZ 100 SL Preliminary data SPP70N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 100 SL


    Original     		PDF SPP70N05L O-220 Q67040-S4000-A2 04/Nov/1997 SPP70N05L Q67040-S4000-A2 sl diode

    SPP70N05L

    Abstract: Q67040-S4000-A2
    Text: BUZ 100 SL SPP70N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code


    Original     		PDF SPP70N05L O-220 Q67040-S4000-A2 30/Jan/1998 SPP70N05L Q67040-S4000-A2

    BUZ100

    Abstract: smd diode code A Q67040-S4000-A2 SPP70N05L
    Text: BUZ 100 SL SPP70N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code


    Original     		PDF SPP70N05L O-220 Q67040-S4000-A2 30/Jan/1998 BUZ100 smd diode code A Q67040-S4000-A2 SPP70N05L

    BLV101A

    Abstract: BLX94 BLV101B BLW91 BFR96S BFR96S equivalent rf bipolar transistor application notes philips BGY19 LLE18010X BLV99
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Line-ups RF Power Transistors for UHF 1996 Feb 12 File under Discrete Semiconductors, SC08b Philips Semiconductors RF Power Transistors for UHF Line-ups INTRODUCTION In this section, we present information on recommended circuit line-ups in the main RF power application areas.


    Original     		PDF SC08b LLE18010X LLE18040X LLE18150X BGY1816 LFE18500X BLV101A BLX94 BLV101B BLW91 BFR96S BFR96S equivalent rf bipolar transistor application notes philips BGY19 LLE18010X BLV99

    MDA380

    Abstract: 4312 020 36642 MDA385 BLU99 TRANSISTOR SL 100 "2222 352"
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU99 BLU99/SL UHF power transistor Product specification March 1993 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in


    Original     		PDF BLU99 BLU99/SL BLU99 OT122A) BLU99/SL MDA380 4312 020 36642 MDA385 TRANSISTOR SL 100 "2222 352"

    122d transistor

    Abstract: SL 100 NPN Transistor MDA309 122d SL 100 NPN Transistor base emitter collector
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU11/SL UHF power transistor Product specification July 1986 Philips Semiconductors Product specification UHF power transistor BLU11/SL DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in


    Original     		PDF BLU11/SL OT-122D) 122d transistor SL 100 NPN Transistor MDA309 122d SL 100 NPN Transistor base emitter collector

    Diode sl

    Abstract: Q67040-S4012-A2 SPP20N05L 450uH
    Text: BUZ 101 SL Preliminary data SPP20N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 101 SL


    Original     		PDF SPP20N05L O-220 Q67040-S4012-A2 04/Nov/1997 Diode sl Q67040-S4012-A2 SPP20N05L 450uH

    Untitled

    Abstract: No abstract text available
    Text: AUTOMOTIVE GRADE PD - 96340 AUIRG4BC30S-S AUIRG4BC30S-SL Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Lead-Free, RoHS Compliant


    Original     		PDF AUIRG4BC30S-S AUIRG4BC30S-SL O-262

    AUIRG4BC30S

    Abstract: AUIRG4BC30
    Text: AUTOMOTIVE GRADE PD - 96340 AUIRG4BC30S-S AUIRG4BC30S-SL Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Lead-Free, RoHS Compliant


    Original     		PDF AUIRG4BC30S-S AUIRG4BC30S-SL O-262 AUIRG4BC30S AUIRG4BC30

    Untitled

    Abstract: No abstract text available
    Text: PD - 96335 AUTOMOTIVE GRADE AUIRG4BC30U-S AUIRG4BC30U-SL UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package


    Original     		PDF AUIRG4BC30U-S AUIRG4BC30U-SL O-262 O-262

    AUIRG4BC30U-S

    Abstract: AUG4BC30U-S AN-994 AUIRG4BC30USTRL
    Text: PD - 96335 AUTOMOTIVE GRADE AUIRG4BC30U-S AUIRG4BC30U-SL UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package


    Original     		PDF AUIRG4BC30U-S AUIRG4BC30U-SL O-262 O-262 AUIRG4BC30U-S AUG4BC30U-S AN-994 AUIRG4BC30USTRL

    transistor buz 350

    Abstract: Q67040-S4004-A2
    Text: BUZ 110 SL SPP80N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code


    Original     		PDF SPP80N05L O-220 Q67040-S4004-A2 28/Jan/1998 transistor buz 350 Q67040-S4004-A2

    BUZ102

    Abstract: Q67040-S4010-A2 SPP47N05L SMD SL
    Text: BUZ 102 SL SPP47N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code


    Original     		PDF SPP47N05L O-220 Q67040-S4010-A2 30/Jan/1998 BUZ102 Q67040-S4010-A2 SPP47N05L SMD SL

    Q67040-S4006-A2

    Abstract: SPP13N05L spp13n
    Text: BUZ 104 SL Preliminary data SPP13N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 104 SL


    Original     		PDF SPP13N05L O-220 Q67040-S4006-A2 04/Nov/1997 Q67040-S4006-A2 SPP13N05L spp13n

    Q67040-S4008-A2

    Abstract: SPP28N05L Transistor Data sl 103
    Text: BUZ 103 SL Preliminary data SPP28N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 103 SL


    Original     		PDF SPP28N05L O-220 Q67040-S4008-A2 04/Nov/1997 Q67040-S4008-A2 SPP28N05L Transistor Data sl 103

    Q67040-S4008-A2

    Abstract: SPP28N05L EAS120
    Text: BUZ 103 SL SPP28N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code


    Original     		PDF SPP28N05L O-220 Q67040-S4008-A2 30/Jan/1998 Q67040-S4008-A2 SPP28N05L EAS120

    Q67040-S4004-A2

    Abstract: 110SL transistor buz 19 transistor buz 350 Semiconductor Group 1997
    Text: BUZ 110 SL Preliminary data SPP80N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 110 SL


    Original     		PDF SPP80N05L O-220 Q67040-S4004-A2 04/Nov/1997 Q67040-S4004-A2 110SL transistor buz 19 transistor buz 350 Semiconductor Group 1997

    ltaft

    Abstract: No abstract text available
    Text: 1DI75F-100 75a : Outil ne Drawings POWER TRAN SISTO R MODULE • Features • ¡SW7± High Voltage • 7 U —+"<ij KrtiSE • ASO ^/SL' • ifeiffl? Including Free W heeling Diode Excellent Safe Operating Area Insulated Type - % IA M H N o . l l D e q u i » « l |


    OCR Scan     		PDF 1DI75F-100 E82988 I95t/R89) ltaft

    131S

    Abstract: 2N3026 15149 sdt8004 SDT7413 SDT7414 SDT7415 SDT7416 SDT7417 SDT7418
    Text: 25 SILICON POWER TRANSISTORS SATU RA TIO N V O LTA G E S C U R R E N T GAIN TYPE NUM BER CASE T YP E V CEO V CBO V 1 V V EBO V hFE MIN. I M AX. V CE v I 'c V CE s A v V BE(s> ! 'c V A I 'b A 5 AMP Sl LICON NPN SDT7413 SDT7414 SDT7415 TO-5 TO-5 TO-5 100 60


    OCR Scan     		PDF sdt7413 sdt7414 sdt7415 sdt7416 sdt7417 sdt7418 sdt7419 sdt9001 sdt9002 sdt9003 131S 2N3026 15149 sdt8004

    SL 100 NPN Transistor

    Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
    Text: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE


    OCR Scan     		PDF THC-2484 THC-4123 THC-4124 THC-4125 THC-4126 THC-40D4 THC-40D5 THC-41D4 THC-41D5 SL 100 NPN Transistor bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bbS3T31 DDBflflRO LQ3 I APX b'lE D l BLU99 BLU99/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.


    OCR Scan     		PDF bbS3T31 BLU99 BLU99/SL OT122A) BLU99/SL OT122D)

    122d

    Abstract: BLU98 ON4612 sot37 172d BLV100
    Text: 62 RF/Microwave Devices Bipolar RF Transmitting Transistors SHF 900 MHz Package Outline Type No. Load Power W @ 900 MHz Power Gain (dB) @ 900 MHz Supply Voltage (V) 0.075 0.075 0.16 0.16 0.4 0.75 0.8 1.2 1 1.5 1.5 3 0.75 1.5 3 6 7.5 9.5 7 9 6.8 5.3 6 6 7


    OCR Scan     		PDF BFR90A BFG90A BFR91A BFG91A BLU98 BLV90 BLT80 BLT81 BLV90/SL BLV91/SL 122d ON4612 sot37 172d BLV100

    transistor tt 2222

    Abstract: TT 2222 npn TRIMMER capacitor 5-60 pF TT 2222 ic TT 2222 BLU99 4312 020 36642
    Text: bSE T> 711002b GGti27fi7 0^7 « P H I N BLU99 BLU99/SL PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters in the u.h.f. band. The transistor is also very suitable fo r application in the 900 MHz m obile radio band.


    OCR Scan     		PDF 711002b GGb27fi7 BLU99 BLU99/SL OT122A) BLU99/SL OT122D) transistor tt 2222 TT 2222 npn TRIMMER capacitor 5-60 pF TT 2222 ic TT 2222 4312 020 36642

    ITT 2222 npn

    Abstract: ITT 2222 A itt 2222 blu99 transistor SL 100 NPN Transistor "2222 352" 4312 020 36642 BLU99 ferroxcube wideband hf choke SOT122A
    Text: N AMER P H I L I P S / D I S C R E T E blE D • bbâB^Bl DDEfifiRQ btH ■ IAPX Jl BLU 99 BLU99/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.


    OCR Scan     		PDF BLU99/SL BLU99 OT122A) BLU99/SL OT122D) ITT 2222 npn ITT 2222 A itt 2222 blu99 transistor SL 100 NPN Transistor "2222 352" 4312 020 36642 ferroxcube wideband hf choke SOT122A