SKM 200 124D TRANSISTOR Search Results

SKM 200 124D TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

SKM 200 124D TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SKM200GB122D Abstract: skm 191 semikron SKHI 22 AR semikron SKm GAL 123D SEMIKRON SKM 100 GAL 123D semikron SKHI 21 AR SKM300GB123D 062d skm 200 123d transistor SKM200GB101D Text: 6. SEMITRANS IGBT Module Insulated Gate Bipolar Transistors Merkmale Typische Anwendungen • MOS-Eingang (spannungsgesteuert) • Motorsteuerung Drehstromantriebsumrichter • N-Kanal • Gleichstrom-Servo- und Roboter-Antriebe • Reihe mit niedriger Sättigungsspannung erhältlich	Original	PDF
Wacker Silicones p12 Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits Fischer wlpf 50 semikron SKHI 22 AR skm100gb121d semikron SKHI 21 AR SKM200GB122D skm 100 gb 121d rifa semikron SKHI 21 AR application note Text: 6. SEMITRANS IGBT Modules Insulated Gate Bipolar Transistor Modules Features Typical Applications • MOS input (voltage controlled) • Frequency converters for AC motor drives • N channel • DC servo and robot drives • Low saturation voltage series available	Original	PDF

Catalog Datasheet

MFG & Type

PDF

Document Tags

SKM200GB122D

Abstract: skm 191 semikron SKHI 22 AR semikron SKm GAL 123D SEMIKRON SKM 100 GAL 123D semikron SKHI 21 AR SKM300GB123D 062d skm 200 123d transistor SKM200GB101D
Text: 6. SEMITRANS IGBT Module Insulated Gate Bipolar Transistors Merkmale Typische Anwendungen • MOS-Eingang (spannungsgesteuert) • Motorsteuerung Drehstromantriebsumrichter • N-Kanal • Gleichstrom-Servo- und Roboter-Antriebe • Reihe mit niedriger Sättigungsspannung erhältlich

Original

PDF

Wacker Silicones p12

Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits Fischer wlpf 50 semikron SKHI 22 AR skm100gb121d semikron SKHI 21 AR SKM200GB122D skm 100 gb 121d rifa semikron SKHI 21 AR application note
Text: 6. SEMITRANS IGBT Modules Insulated Gate Bipolar Transistor Modules Features Typical Applications • MOS input (voltage controlled) • Frequency converters for AC motor drives • N channel • DC servo and robot drives • Low saturation voltage series available