SKM 75 Gb 124 IGBT
Abstract: SKM 400 gal 124 IGBT SKM 25 GD SKM 40 GD 121 D SKM 40 GD 101 D IGBT cross reference semikron skm 40 gd 121 skm 75 gb 101 d skm 40 gd 121 skm 40 gb 124 d skm 50 gb 100 d
Text: SEMITRANS IGBT Modules Packaging, ESD Protection and Mounting Hardware * The SEMITRANS IGBT Modules are electrostatic-sensitive devices ESD). They are ESD-protected and packaged in SEMIBOX, i.e. corrugated paper boxes with L x W x H = 190 x 140 x 30 mm resp. 53 mm hight. See SEMIKRON
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b58 253
Abstract: SKM 111 AR SKM 121 R semikron semitrans SKM 121 AR M1 case
Text: Absolute Maximum Ratings Symbol VDS VDGR ID IDM VGS PD Tj, Tstg Visol humidity climate Conditions 1) RGS = 20 kΩ AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 200 200 130 390 ± 20 700 – 40 . . .+150 (125) 2 500 Class F 40/125/56 V V A A V W °C V
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SKM 111 AR
Abstract: SKM 181 R semikron semitrans skm 151 mosfet SKM 300 CIRCUIT SKM111 SKM181 semikron semitrans 3 SKM120
Text: Absolute Maximum Ratings Symbol VDS VDGR ID IDM VGS PD Tj, Tstg Visol humidity climate Conditions 1) RGS = 20 kΩ AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 100 100 200 600 ± 20 700 – 40 . . .+150 (125) 2 500 Class F 40/125/56 V V A A V W °C V
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SKM 40 GD 121 D
Abstract: SKM 40 GD 101 D skm 40 gd 121 skm 200 gb 122 d skm 75 gb 101 d skm 150 gb 122 SKM 25 GD IGBT cross reference semikron skm 40 gd 121 SKM 300 GA 102 D Semitrans M SKm 100 ga 121 d
Text: 6 0,75$16 ,*%7 0RGXOHV ,QVXODWHG *DWH %LSRODU 7UDQVLVWRU 0RGXOHV HDWXUHV 7\SLFDO $SSOLFDWLRQV 026 LQSXW YROWDJH FRQWUROOHG )UHTXHQF\ FRQYHUWHUV IRU $& PRWRU GULYHV 1 FKDQQHO '& VHUYR DQG URERW GULYHV /RZ VDWXUDWLRQ YROWDJH VHULHV DYDLODEOH
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1371RQ
SKM 40 GD 121 D
SKM 40 GD 101 D
skm 40 gd 121
skm 200 gb 122 d
skm 75 gb 101 d
skm 150 gb 122
SKM 25 GD
IGBT cross reference semikron skm 40 gd 121
SKM 300 GA 102 D
Semitrans M SKm 100 ga 121 d
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skm 191 mosfet
Abstract: skm 151 mosfet SKM 181 R skm 141 ar zener DIODE D49 skm 181 mosfet SKM 200 CIRCUIT SKM 121 R semikron skm 191 skm 191
Text: Section 5: SEMITRANS M Power MOSFET Modules V ds Type ’ ’ ▲New type SKM SKM SKM SKM SKM SKM SKM A SKM SKM SKM SKM SKM SKM SKM SKM SKM SKM SKM SKM A SKM SKM SKM SKM SKM SKM SKM SKM V 101 AR 101 RZR 111 AR 111 RZR 450A010 121 A R 121 RZR 180A020 450A020
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450s1
D15/D45
450A010
180A020
450A020
120B020
240B020
310B020
240M020
310M020
skm 191 mosfet
skm 151 mosfet
SKM 181 R
skm 141 ar
zener DIODE D49
skm 181 mosfet
SKM 200 CIRCUIT
SKM 121 R
semikron skm 191
skm 191
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skm 254 f
Abstract: SKM254F SKM181F SKM 204 A SKM151F SKM 111 AR E63532 SKM120
Text: SEMITRANS M1 SKM 111 AR SKM 121 AR SKM 151 F SKM 180 A 020 SKM 181 SKM 181 F Case D 15 UL recognized, file no. E 63 532 CASEOS 2.8x0.8 i 40 Jl Dimertsions in mm SEMITRANS 2 SKM 120 B 020 SKM 204 A SKM 214 A SKM 254 F UL recognized, file no. E 63 532 c*sano
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SKHI 20
Abstract: semikron SKHI 22 AR skm 191 SKM284F skm 151 mosfet skm 191 mosfet skm 22 gal 121 SKM 300 GA 102 D skm 75 101 SKM 40 GD 101 D
Text: s e MIKRDn Section 6: SEMITRANS M Power MOSFET and IGBT Modules Summary of Types Power M O SFET Modules Types 1 Circuit V ds Id RDS on) Pd Tease j T j = 25 °C Tease = 25 °C = 25 CC ! max. I W A m il Rthjc Case Page °c/w New type V • SKM 101 AR 50 200
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skm 200 gb 122 d
Abstract: SKM 200 GB 102 D SKM 200 GB 122 skm 100 gb 121d SKM 200 GB 102D SEMIKRON SKM 22 GAL 121D skm 100 gb 101 d 122d semikron rf3 skm 141
Text: s e M IK R O N Sym bol Values . 101 D . 121 D .1 0 2 D i . 122 D Conditions 11 V ces II O C\J UJ O cr V cgr 1000 1200 V 1000 1200 V lc Tease — 2 5 /8 0 ‘ C 2 0 0 /1 5 0 ICM Tease = 2 5 /8 0 °C 4 0 0 /3 0 0 per IG B T , Tease = 2 5 ± 20 V - 5 5 . . . + 150
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Si 122D
Abstract: SEMIKRON SKM 100 GAL 101D skm 150 gal 122d SKM 300 GB 12 V skm 100 gb 101 d SKM 200 GB 102D semikron skm 150 gb 122 semikron skm 50 z 100 R semikron skm 150 gal
Text: se MIKRO n Absolute Maximum Ratings Sym bol Values . 101 D . 121 D . 102 D . 122 D Conditions ' 1200 1 0 0 /7 5 ICM Tease = 2 5 /8 0 C 2 0 0 /1 5 0 V ges Ptot per IG B T , T case = 2 5 °C II O C LU Tease = 2 5 /8 0 CM a cr 1000 VcES VcGR lc 1000 1200
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skm 100 gb 101 d
Abstract: skm 100 gb 121d Si 122D GAL 16 v 8 D DIP skm 100 gb 122 d skm 50 gb 101 d D4252-1 skm 200 gb 122 d skm 75 gb 101 d SEMIKRON SKM 22 GAL 121D
Text: m SIE I Ö13bb?l D[]G3L,7fl TbS » S E K G semikrdn SENIKRON INC Absolute Maximum Ratings Sym bol Values . 101 D I . 121 D . 102.D I . 122 D Conditions 1 1000 VCES Units 1200. 1000 , V 1200 V VCGR R g e = 2 0 kQ Ic Tease = 2 5 /8 0 °C 1 0 0 /7 5 ICM
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13bh71
Woff12
WoH2351
skm 100 gb 101 d
skm 100 gb 121d
Si 122D
GAL 16 v 8 D DIP
skm 100 gb 122 d
skm 50 gb 101 d
D4252-1
skm 200 gb 122 d
skm 75 gb 101 d
SEMIKRON SKM 22 GAL 121D
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skm 200 gb 122 d
Abstract: SKM 200 GB 102 D SKM 200 GB 12V Si 122D SKM 150 GB 12V SKM 200 GB 102D skm 150 gal 122d SEMIKRON SKM 50 GAL 121D SEMIKRON SKM 22 GAL 121D semikron skm 150 gb 122
Text: SEMIKRON Conditions ' VcES VcGR lc ICM V ges Tease Ptot per Values . 101 D . 121 D . 102 D . 122 D 1000 1200 1000 1200 200/150 400/300 ±20 1250 - 5 5 . .+150 2 500 Class F 55/150/56 Rge = 20 k fl = 25/80 °C Tease = 25/80 °C T j, Tstg Visol AC, humidity
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l3bb71
G0D37G2
10-E1
skm 200 gb 122 d
SKM 200 GB 102 D
SKM 200 GB 12V
Si 122D
SKM 150 GB 12V
SKM 200 GB 102D
skm 150 gal 122d
SEMIKRON SKM 50 GAL 121D
SEMIKRON SKM 22 GAL 121D
semikron skm 150 gb 122
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Untitled
Abstract: No abstract text available
Text: S IE D Ô13bb71 DDG3bflb D3T • SEK G S E M IK K O N SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc C onditions ' Values .101 D . 121 D . 102 D . 122 D 1000 1200 1000 1200 150/100 300/200 ±20 1000 - 5 5 . .+150 2 500 Class F 55/150/56
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13bb71
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skm 150 gb 122
Abstract: skm 40 gb 124 d lse-b6 GAL10 SKM 121 R skm 100 gb 101 d tic 122
Text: s e MIKRO n Absolute Maximum Ratings Symbol V ces I V cgr lc 1c m ; V ges Ptot Values . 101 D . 121 D . 102 D . 122 D Conditions ' 1000 1200 1000 I 1200 150/10 0 3 0 0 /2 0 0 ± 20 1000 - 55 . . .+150 2 500 C lass F 5 5 /1 5 0 /5 6 R ge = 2 0 k i i
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GAL101D,
skm 150 gb 122
skm 40 gb 124 d
lse-b6
GAL10
SKM 121 R
skm 100 gb 101 d
tic 122
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SEMIKRON SKM 50 GAL 121D
Abstract: skm 50 z skm 75 gb 101 d SK 200 GAR 125 50GB101D skm 22 gal 121 SEMIKRON SKM 22 GAL 121D SEMIKRON SKM 100 GAL 101D
Text: s e M IKRD n Absolute Maximum Ratings Sym bol Values . 101 D Conditions ' 1000 1000 VcES VcGR R g e = 20 k£2 Ic T c a s e = 25/80 °C T c a s e = 25/80 CC ICM per IGBT, T ca se 1200 1200 50/34 100/68 ±20 400 - 5 5 . .+150 2 500 Class F 55/150/56 V ges
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Untitled
Abstract: No abstract text available
Text: SIE D m Ö13bb71 00D3bMb 452 « S E K G SEMIKRON SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Plot Tj, Tstg Visol hum idity climate C onditions Values . 101 ' D , .1 2 1 D 1000 1000 I 1200 i 1200 40/25 80/50 ±20 300 - 5 5 . . .+150
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13bb71
00D3bMb
Characteristic21
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SEMIKRON SKM 22 GAL 121D
Abstract: SEMIKRON SKM 50 GAL 121D skm 100 gb 121d GE215 40GB101D SK 70 KQ 16 SEMIKRON SKM4 skm 75 101 SEMIKROM SEMIKRON+SKM+22+GAL+121D
Text: s e MIKRD n Absolute Maximum Ratings Symbol C onditions 1 Values VcES R ge = 2 0 kQ T case = 2 5 /8 0 °C T case = 2 5 /8 0 °C VcGR lc ICM 1000 1200 V 1200 V per IG B T , T case = 2 5 °C 8 0 /5 0 A ± 20 V A C , 1 min D IN 4 0 0 4 0 W 300 -5 5 . humidity
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SKM40
SKM40GAR
SEMIKRON SKM 22 GAL 121D
SEMIKRON SKM 50 GAL 121D
skm 100 gb 121d
GE215
40GB101D
SK 70 KQ 16 SEMIKRON
SKM4
skm 75 101
SEMIKROM
SEMIKRON+SKM+22+GAL+121D
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skm 75 gb 101 d
Abstract: skm 100 gb 121d skm 75 gb 101d SK 50 GAL 065 75GB101D SK 200 GAR 125 skm 75 101 SEMIKRON SKM 22 GAL 121D
Text: s e MIKRDN Absolute Maximum Ratings Symbol Conditions 1 VcES VcGR lc ICM V ges Rge = 20 kQ Tease — 25/80 °C Tease = 25/80 °C Ptot Tj, Tstg V ¡so! humidity climate Values . 101 D 1000 1000 . 121 D Units 1200 1200 V V A A V I 75/50 150/100 ±20 500
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SKM75
skm 75 gb 101 d
skm 100 gb 121d
skm 75 gb 101d
SK 50 GAL 065
75GB101D
SK 200 GAR 125
skm 75 101
SEMIKRON SKM 22 GAL 121D
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skm 191
Abstract: semikron skm 191 Ultrasonic welding circuit diagram SKM181FC skm 151 mosfet semikron skm 191 fc SKM151FC skm 141 skm 191 mosfet Ultrasonic welding generator
Text: se MIKRO n Absolute Maximum and Minimum Ratings1* Sym bol V sup Vj Visol Tease Tstg Rating Value Driver supply voltage Input signal voltage Input-O utput Case tem perature2* Storage tem perature I mm. max. - 18 Vsup + 0,3 2500 + 85 + 85 -0 ,3 -4 0 -4 0 Unit
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SKM111
SKM181
skm 191
semikron skm 191
Ultrasonic welding circuit diagram
SKM181FC
skm 151 mosfet
semikron skm 191 fc
SKM151FC
skm 141
skm 191 mosfet
Ultrasonic welding generator
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Untitled
Abstract: No abstract text available
Text: SIE ]> • s é í TF k r o í T SEMIKRON in c Absolute Maximum Ratings Symbol ñl3bb71 DG03bb5 bTS M S E K G Conditions 1 Values . 101 D 121 D 1000 1000 1200 ■ 1200 50/34 100/68 + 20 400 - 5 5 . . .+150 2 500 VcES VcGR R g e = 20 k Q lc Tcase = 25/80 C
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l3bb71
DG03bb5
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SKM294F
Abstract: semikron skm 191 skm 191 SKM111RZR SKM 181 R skm 254 f skm 191 mosfet skm 141 ar SKM 121 R SKM 101
Text: s e MIKRON Absolute Maximum Ratings Sym bol C o n d itio n s 1> V ds V dg r R g s = 20 k i ! Id Idm V gs Pd T|, Tstg Visol humidity climate AC, 1 min, 20 0 |jA DIN 40 040 DIN IEC 68 T.1 Values Units 1000 1000 18 72 ± 20 400 - 5 5 . . .+150 2 500 Class F 5 5 /1 5 0 /5 6
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SKM 40 GD 101 D
Abstract: SKM 40 GD 121 D skm 40 gd 121 SKM 15 GD 100 D SKM40 B 688 MEEHAN SKM 22 GD 101 D SKM40GD121
Text: 5EMIKRDN Absolute Maximum Ratings Symbol V ce S VcGR lc ICM V ges Values Conditions ' . 101 D 1000 1000 Rge = 20 k f i Tcase — 25 /80 C T case = 25 /80 =C AC, 1 min humidity climate D IN 40 040 DIN I EC 6 8 T .1 1200 1200 4 0 /2 5 80 /50 ±20 300 - 5 5 . .+150
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SKM40
SKM 40 GD 101 D
SKM 40 GD 121 D
skm 40 gd 121
SKM 15 GD 100 D
B 688
MEEHAN
SKM 22 GD 101 D
SKM40GD121
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skm 141
Abstract: No abstract text available
Text: fil3bb71 0GG3bl0 2T7 « S E K 6 S1E D SEMIKRON SEMIKRON INC Absolute Maximum and Minimum Ratings1^ S ym bol R a tin g Vsup Driver supply voltage Input signal voltage Input-O utput Case tem perature2* Storage tem perature U n it V a lu e m in . Vj Visol Tease
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fil3bb71
SKM111
SKM181
skm 141
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SKM 22 GD 101 D
Abstract: SKM 40 GD 101 D SKM 15 GD 100 D SKM 40 GD 121 D FS403 skm 40 gd 121
Text: se MIKRO n Absolute Maximum Ratings Symbol Conditions 1 Values . 101 D I . 121 D 1000 1000 V cES = 20 kQ 1 case = 25/80 °C Tease = 25/80 °C R ge VcGR lc ICM per IGBT, Tease = 25 °C jH — C /5I CQ Visol humidity climate 1200 1200 22/15 44/30 ±20 150
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B539
Abstract: B539B skm 151 mosfet SKM 181 R B-539 SKM254F SKM151F SKM 181 c SKM 121 R skm 181 mosfet
Text: s em ik r o n Section 5: SEMITRANS M Power MOSFET Modules Summary of Types Types’ * Circuit V ds Id Tease = 25 °C • New type V A RDS on Tj Pd Rthjc Case Page B 5 -3 = 25 °C Tease max. = 25 °C mS2 W °C/W 100 200 700 0,18 D 15 200 130 20 700 0,18
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SKM111
B5-18
SKHI21
B539
B539B
skm 151 mosfet
SKM 181 R
B-539
SKM254F
SKM151F
SKM 181 c
SKM 121 R
skm 181 mosfet
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