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    IGBT 2pg011

    Abstract: 2PG011
    Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)


    Original     		2002/95/EC) 2PG011 O-220D-A1 IGBT 2pg011 2PG011 PDF

    2PG011

    Abstract: IGBT 2pg011 2pg0 2 SJN00008AED 2pg011pcta
    Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)


    Original     		2002/95/EC) 2PG011 O-220D-A1 2PG011 IGBT 2pg011 2pg0 2 SJN00008AED 2pg011pcta PDF

    2PG011

    Abstract: IGBT 2pg011 SJN00008AED
    Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)


    Original     		2002/95/EC) 2PG011 O-220D-A1 2PG011 IGBT 2pg011 SJN00008AED PDF