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Power Integrations SJEP120R063
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SJEP120R063 Datasheets Context Search

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JFET semisouth Abstract: SJEP120R050 SGDR600P1 SEMISOUTH SJEP120 SJEP120R063 AN-SS1 ixdd509 SiC JFET JFET Text: Demo Board Preliminary SGDR600P1 Two-Stage Opto Coupled Gate Driver Demo Board The SGDR600P1 is an optoisolated, two-stage gate driver optimized for high speed, hard switching of SemiSouth's SJEP120R050 and SJEP120R063 normally-off SiC VJFETs. The SGDR600P1 gate driver provides a peak output current of +6/- 3A	Original	PDF	SGDR600P1 5V/-15V SGDR600P1 SJEP120R050 SJEP120R063 SJEP120R050 JFET semisouth SEMISOUTH SJEP120 AN-SS1 ixdd509 SiC JFET JFET
SJEP120R063 Abstract: SEMISOUTH sjep120r063 SEMISOUTH JFET semisouth silicon carbide JFET silicon carbide j-fet silicon carbide SJEP SJEP120 sjep120r0 Text: Silicon Carbide PRELIMINARY SJEP120R063 Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior	Original	PDF	SJEP120R063 O-247 SJEP120R063 SEMISOUTH sjep120r063 SEMISOUTH JFET semisouth silicon carbide JFET silicon carbide j-fet silicon carbide SJEP SJEP120 sjep120r0
JFET semisouth Abstract: SiC JFET SJEP120R063 SEMISOUTH sjep120r0 Text: ADVANCED INFORMATION SiC JFET ASJE1200R063 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: Die Inside RDS ON max 0.063 V : ETS,typ 440 J • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:	Original	PDF	ASJE1200R063 O-257 260oC MIL-PRF-19500 MIL-STD-750 SJEP120R063 O-247 ASJE1200R063 JFET semisouth SiC JFET SEMISOUTH sjep120r0
ASJE1200R063 Abstract: SiC JFET JFET semisouth SJEP120 SJEP120R063 SEMISOUTH silicon carbide JFET sjep120r0 Text: ADVANCE INFORMATION SiC JFET ASJE1200R063 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: Die Inside RDS ON max 0.063 V : ETS,typ 440 J • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:	Original	PDF	ASJE1200R063 O-258 260oC MIL-PRF-19500 MIL-STD-750 SJEP120R063 O-247 ASJE1200R063 O-257 SiC JFET JFET semisouth SJEP120 SEMISOUTH silicon carbide JFET sjep120r0
SJEP120R125 Abstract: SiC-JFET AN-SS1 sjep120r063 SiC JFET SEMISOUTH SEMISOUTH sjep120r125 silicon carbide JFET SiC BJT SJEP120 Text: Application Note AN-SS1 Silicon Carbide Enhancement-Mode Junction Field Effect Transistor and Recommendations for Use Table of Contents 1. 2. 3. 4. 5. Page Device Overview . 2	Original	PDF