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    SIRECT Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3TA100GK03NB Sirectifier Three Phase Half Bridge Original PDF
    3TA100GK04NB Sirectifier Three Phase Half Bridge Original PDF
    3TA100GKXXNB Sirectifier Three Phase Half Bridge Original PDF
    3TA130GK03NB Sirectifier Three Phase Half Bridge Original PDF
    3TA130GK04NB Sirectifier Three Phase Half Bridge Original PDF
    3TA130GKXXNB Sirectifier Three Phase Half Bridge Original PDF
    3TA200GK03NB Sirectifier Three Phase Half Bridge Original PDF
    3TA200GK04NB Sirectifier Three Phase Half Bridge Original PDF
    3TA200GKXXNB Sirectifier Three Phase Half Bridge Original PDF
    3TA60GK03NB Sirectifier Three Phase Half Bridge Original PDF
    3TA60GK04NB Sirectifier Three Phase Half Bridge Original PDF
    3TA60GKXXNB Sirectifier Three Phase Half Bridge Original PDF
    3TA80GK03NB Sirectifier Three Phase Half Bridge Original PDF
    3TA80GK04NB Sirectifier Three Phase Half Bridge Original PDF
    3TA80GKXXNB Sirectifier Three Phase Half Bridge Original PDF
    6SI10N12 Sirectifier NPT IGBT Modules Original PDF
    6SI15N12 Sirectifier NPT IGBT Modules Original PDF
    6SI25N12 Sirectifier NPT IGBT Modules Original PDF
    6SI40N12 Sirectifier NPT IGBT Modules Original PDF
    6SI75N12 Sirectifier NPT IGBT Modules Original PDF
    ...

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    SBL30L30CT

    Abstract: 35v smps
    Text: E L E C T R O N I C The improved Low VF Schottkys Monday, 6 August 2007 Sirectifier Global Corp. SGC recently announced that the improved low Forward Voltage Drop (VF) Schottkys of 30V, 45 and 60V families. The improved alloy barrier Schottkys obtained the lowest VF characteristic to reduce the conduction loss of the SMPS application.


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    SBL30L30CT O-220AB) 2555CT/PT SBL4060CT/PT SBL30L30CT 35v smps PDF

    SB1545

    Abstract: st1235 st1020 IR 2638 ST1035 sb1250 ST1535SC st-3020
    Text: s Sirectifier Semiconductors N g g P Green Product Copyright 2008 Sirectifier Global Corp. All Right Reserved Introduction In BIPV Building-Integrated Photovoltaic systems, the Photovoltaic solar cells can be imbedded into standard building materials such as roofs and


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    SR008116 SB1545 st1235 st1020 IR 2638 ST1035 sb1250 ST1535SC st-3020 PDF

    SOT-227 Package

    Abstract: Barksdale newark Sirectifier ITO-220
    Text: E L E C T R O N I C Our Package January 2007 /Rev. 2 SOD-523 SOT-23 SOT-323 SOT-363 SOT-563 SOT-23-6 SMA SMB SMC DO-41 DO-201AD TO-126 TO-92 D-PAK D2-PAK TO-220 ITO-220 Fig. 9 Fig. 10 Fig. 12 Fig. 17 Fig. 14 Fig. 15 TO-247/ TO-3P Fig. 16 SOT-227 Sirectifier Global Corp., Delaware, U.S.A.


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    OD-523 OT-23 OT-323 OT-363 OT-563 OT-23-6 DO-41 DO-201AD O-126 O-220 SOT-227 Package Barksdale newark Sirectifier ITO-220 PDF

    n05a

    Abstract: L05BD52 PRTR5V0U4D CM1218-05S7 N05B PACDN044 uClamp0511P CM1224-04MR Rclamp0504S N05AT
    Text: E L E C T R O N I C ESD PROTECTOR CROSS REFERENCE July 2008 /Rev. 1 P/N CROSS REFERENCE NO. SIRECT NXP SEMTECH 1 N05BD92 PESD5V0S1BL uClamp0511P 2 N05BD52 PESD5V0S1BB uClamp0501H 3 N05BD32 PESD5V0L1BA 4 N12BD32 PESD12VL1BA 5 N05AD92 PESD5V0S1UL uClamp0511P


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    N05BD92 uClamp0511P N05BD52 uClamp0501H N05BD32 N12BD32 PESD12VL1BA N05AD92 N05AD52 n05a L05BD52 PRTR5V0U4D CM1218-05S7 N05B PACDN044 uClamp0511P CM1224-04MR Rclamp0504S N05AT PDF

    Untitled

    Abstract: No abstract text available
    Text: E L E C T R O N I C Surface Mount SMA & SMB Low VF Schottkys Friday, 2 March 2012 Sirectifier Global Corp. SGC announced that the package of SMA & SMB surface-mount SBD for the high-efficiency portable and SMPS applications. The lowest forward-drop Voltage(VF) of these between 0.35V and 0.40V at the temperature of 125°C. The followings are the already provided item


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    A/40V A/60V DO-214AC DO214AA PDF

    MBR40200

    Abstract: MBR40150 MBR10B100FCTH MBR20B100FCTH SB3200 SB3150 MBR20B150FCTH MBR20200PT MBR20B100FCT MBR50100PT
    Text: s SirectSemi N g g P Green Product Copyright 2009 Sirectifier Global Corp. All Right Reserved Barrier & Breakdown Voltage V B Electronic Characteristics (V F @ 125°C & IR @ 25°C) Pt (Platinum) Barrier, 45-200V Highest Tj (150-175°C) and lowest I R (less than 10 A)


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    5-200V 0-60V 00-150V SR009015 MBR40200 MBR40150 MBR10B100FCTH MBR20B100FCTH SB3200 SB3150 MBR20B150FCTH MBR20200PT MBR20B100FCT MBR50100PT PDF

    sr 560fc

    Abstract: 560FC sb360 do-27 MBR20100CT SB360 3 rectifier AC0541 MBR20100C SB56 DATE CODE ZA
    Text: E L E C T R O N I C Device Marking of Power Schottky June 2005 1. DO-41/ DO-15 / DO-27 DO-201AD No Item Description 1 Brand “SR” is the condensation of Sirectifier 2 Part Number Show the part number of Sirectifier 3 Rectifier Direction To show the direction of the Cathode(-)


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    DO-41/ DO-15 DO-27 DO-201AD) SB360 O-126 560FC SB560FC) MBR20100CT AC0541 sr 560fc sb360 do-27 SB360 3 rectifier AC0541 MBR20100C SB56 DATE CODE ZA PDF

    1.2V solar garden light

    Abstract: solar dc light system TO-263AC by-pass solar cell Solar Garden Light pv bypass diode
    Text: E L E C T R O N I C The Application of the “By-pass” Diode for Solar Cell Monday, 19 November 2007 Sirectifier Global Corp. SGC announced that the new “By-pass” diode which with lower forward voltage drop (VF) for many kinds of DC to DC application especially in the solar cell fields.


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    O-263AC 1.2V solar garden light solar dc light system TO-263AC by-pass solar cell Solar Garden Light pv bypass diode PDF

    1.2V solar garden light

    Abstract: Solar Garden Light diode F8 23 by-pass solar cell
    Text: E L E C T R O N I C The New “By-pass” Diode Friday, 23 November 2007 Sirectifier Global Corp. SGC announced that the new “By-pass” diode which with lower forward voltage drop (VF) for many kinds of DC to DC application especially in the solar cell fields.


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    PDF

    newark

    Abstract: L054BT26 15KV LR052BT14
    Text: E L E C T R O N I C ESD Protector Application Friday, 18 July 2008 Sirectifier Global Corp., Delaware, U.S.A. Sales Representatives: U.S.A. 113 Barksdale Professional Center in the City of Newark, County of New Castle, Delaware e-mail: sgc@sirectsemi.com China Room 320, Building Chaohui,


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    L054BT26 newark L054BT26 15KV LR052BT14 PDF

    sirect

    Abstract: No abstract text available
    Text: Slim Ultra Low VF TO-277 Schottky Monday, 2 September, 2013 Sirect Semiconductor Inc., announced that the new ultra low VF slim package, TO-277 Schottky, for the high-density and slim portable applications such as mobile phone, note book, pad, LED lighting and SMPS switching-mode power supply , etc. There are both planer alloy and trench types


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    O-277 S15U50PB S10L60PB S15L60PB S10L100PB S15L100PB S10L150PB S15L150PB S15U45MA sirect PDF

    Untitled

    Abstract: No abstract text available
    Text: E L E C T R O N I C Pulse Width Modulation PWM Controller – SR8136 Thursday, 22 March 2012 SR8136 is a high performance, low cost, highly integrated current mode PWM controller for offline flyback converter applications.The IC integrates Sirectsemi’s Proprietary “Hybrid Frequency Jittering” for the oscillator to reduce conduction EMI emission of a power supply. When the output


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    SR8136 SR8136 prov23-6, OT-23-6 19F-3, PDF

    Untitled

    Abstract: No abstract text available
    Text: S3A … S3M Surface Mount Si-Rectifiers Si-Gleichrichter für die Oberflächenmontage Nominal current – Nennstrom 3A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…1000 V Plastic case Kunststoffgehäuse ~ SMC ~ DO-214AB Weight approx. – Gewicht ca.


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    DO-214AB UL94V-0 100/C PDF

    diode IN 4007

    Abstract: free download datasheet IN 4007 DO-213AB 4007 4007 diode do-213AB IN 4001 IN 4007 in 4007 diode in 4007 rectifier diode peak current of IN 4007 DO-213ab
    Text: SM 4001 Q … SM 4007 Q Surface Mount Si-Rectifiers Si-Gleichrichter für die Oberflächenmontage Nominal current – Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…1000 V Plastic case QuadroMELF Kunststoffgehäuse QuadroMELF


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    DO-213AB UL94V-0 175/C 100/C tter\Sondertypen\sm400-q diode IN 4007 free download datasheet IN 4007 DO-213AB 4007 4007 diode do-213AB IN 4001 IN 4007 in 4007 diode in 4007 rectifier diode peak current of IN 4007 DO-213ab PDF

    500 uf

    Abstract: No abstract text available
    Text: UF 5400 . UF 5408 Ultrafast Switching Si-Rectifiers Ultraschnelle Si-Gleichrichter Nominal current – Nennstrom 3A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50.1000 V Plastic case Kunststoffgehäuse ~ DO-201 Weight approx. – Gewicht ca.


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    DO-201 UL94V-0 150/C 175/C 125/C 500 uf PDF

    marking 34A

    Abstract: No abstract text available
    Text: GL 34A . GL 34M Surface Mount Si-Rectifiers Si-Gleichrichter für die Oberflächenmontage Nominal current – Nennstrom 0.5 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…1000 V Plastic case MiniMELF Kunststoffgehäuse MiniMELF SOD-80


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    OD-80 DO-213AA UL94V-0 125/C marking 34A PDF

    GL1J

    Abstract: minimelf marking
    Text:  GL1A . GL1M Surface Mount Si-Rectifiers Si-Gleichrichter für die Oberflächenmontage Nominal current – Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…1000 V Plastic case MiniMELF Kunststoffgehäuse MiniMELF SOD-80


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    UL94V-0 OD-80 DO-213AA 175/C 125/C GL1J minimelf marking PDF

    minimelf blue

    Abstract: minimelf white violet
    Text: GL 34A . GL 34M Surface Mount Si-Rectifiers Si-Gleichrichter für die Oberflächenmontage 0.4 3.5 0.4 1.6 Nominal current – Nennstrom Dimensions / Maße in mm 0.5 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…1000 V Plastic case MiniMELF


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    OD-80 DO-213AA UL94V-0 175LC 125LC minimelf blue minimelf white violet PDF

    Untitled

    Abstract: No abstract text available
    Text: International SIRectifier Provisional Data Sheet No. PD-9.1400 IRHY9130CM JANSR2N7382 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR [REF: MIL-PRF-19500/615] P-CHANNEL RAD HARD •100 Volt, 0.30Q, RAO HARD HEXFET International Rectifier’s P-Channel RAD HARD technology


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    IRHY9130CM JANSR2N7382 MIL-PRF-19500/615] Liguria49 PDF

    C989

    Abstract: No abstract text available
    Text: International @siRectifier Provisional Data Sheet PD-9.1184 IRGKIN075K06 "CHOPPER" IGBT INT-A-PAK Low conduction loss IGBT VCE = 600V lc =75A • Rugged Design • Simple gate-drive •Switching-Loss Ra losses • Short circuit rated Vce ON <2.7V ^ > 10^8


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    IRGKIN075K06 C-990 C989 PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin 12019/A International SIRectifier i 3 o h f R s e r ie s STANDARD RECOVERY DIODES Stud Version 130 A Features • H igh c u rre n t c a rry in g c a p a b ility ■ H igh s u rg e c u rre n t c a p a b ility ■ T y p e s up to 1200V V RRM ■ S tu d c a th o d e and stu d a n o d e v e rs io n


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    12019/A 4A55452 PDF

    Untitled

    Abstract: No abstract text available
    Text: W78L51 nbon Electronics Corp. 8-BIT MICROCONTROLLER GENERAL DESCRIPTION The W78L51 microcontroller supplies a wider frequency and supply voltage range than most 8-bit microcontrollers on the market. It is compatible with the industry standard 80C51 microcontroller


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    W78L51 W78L51 80C51 16-bit aSS-2-71 PDF

    78L5

    Abstract: 78L52
    Text: W78L52 8-BIT MICROCONTROLLER GENERAL DESCRIPTION The W 78L52 microcontroller supplies a wider frequency and supply voltage range than most 8-bit microcontrollers on the market. It is compatible with the industry standard 80C52 microcontroller series. The W 78L52 contains four 8-bit bidirectional parallel ports, one extra 4-bit bit-addressable I/O


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    W78L52 78L52 80C52 16-bit aSS-2-71 513ic 78L5 PDF

    TRANSISTOR 132-gd

    Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
    Text: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n


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    06o3H TRANSISTOR 132-gd TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes PDF