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    Vishay Intertechnologies SIHW47N65E-GE3

    N-CHANNEL 650V - Tape and Reel (Alt: SIHW47N65E-GE3)
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    SIHW47N65E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHW47N65E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 650V 47A TO-247AD Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: SiHW47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Generation Two 700 VGS = 10 V • Low Figure-of-Merit (FOM) Ron x Qg 0.072 Qg max. (nC) 273 • Low Input Capacitance (Ciss)


    Original     		SiHW47N65E O-247AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHW47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low figure-of-merit (FOM) Ron x Qg 700 VGS = 10 V • Low input capacitance (Ciss) 0.072 Qg max. (nC) 273 • Reduced switching and conduction losses


    Original     		SiHW47N65E O-247AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF