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    SIHG73N60 Price and Stock

    Vishay Siliconix SIHG73N60E-GE3

    MOSFET N-CH 600V 73A TO247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHG73N60E-GE3 Tube 129 1
    • 1 $14.06
    • 10 $14.06
    • 100 $14.06
    • 1000 $7.175
    • 10000 $7.175
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    RS SIHG73N60E-GE3 Bulk 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $11.27
    • 10000 $9.58
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    New Advantage Corporation SIHG73N60E-GE3 800 1
    • 1 -
    • 10 -
    • 100 $9.43
    • 1000 $8.8
    • 10000 $8.8
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    Vishay Siliconix SIHG73N60E-E3

    MOSFET N-CH 600V 73A TO247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHG73N60E-E3 Tube 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $7.175
    • 10000 $7.175
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    Vishay Siliconix SIHG73N60AEL-GE3

    MOSFET N-CH 600V 69A TO247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHG73N60AEL-GE3 Tube 500
    • 1 -
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    • 100 -
    • 1000 $7.175
    • 10000 $7.175
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    Bristol Electronics SIHG73N60AEL-GE3 400
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    Vishay Intertechnologies SIHG73N60E-GE3

    N-CHANNEL 600V - Tape and Reel (Alt: SIHG73N60E-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHG73N60E-GE3 Reel 19 Weeks 500
    • 1 -
    • 10 -
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    • 1000 $7.06027
    • 10000 $6.75294
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    Mouser Electronics SIHG73N60E-GE3 508
    • 1 $12.23
    • 10 $9.86
    • 100 $7.29
    • 1000 $7.15
    • 10000 $7.15
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    Arrow Electronics SIHG73N60E-GE3 1 19 Weeks 1
    • 1 $0.5324
    • 10 $0.5324
    • 100 $0.5324
    • 1000 $0.5324
    • 10000 $0.5324
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    Newark SIHG73N60E-GE3 Bulk 1
    • 1 $12.39
    • 10 $11.79
    • 100 $10.55
    • 1000 $10.48
    • 10000 $10.48
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    TTI SIHG73N60E-GE3 Tube 2,500 100
    • 1 -
    • 10 -
    • 100 $7.14
    • 1000 $7.14
    • 10000 $7.14
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    TME SIHG73N60E-GE3 392 1
    • 1 $9.02
    • 10 $8.18
    • 100 $7.75
    • 1000 $7.52
    • 10000 $7.52
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    EBV Elektronik SIHG73N60E-GE3 20 Weeks 25
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    Vishay Intertechnologies SIHG73N60AE-GE3

    N-CHANNEL 600V - Tape and Reel (Alt: SIHG73N60AE-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHG73N60AE-GE3 Reel 19 Weeks 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $5.65191
    • 10000 $5.40588
    Buy Now
    Mouser Electronics SIHG73N60AE-GE3 159
    • 1 $13.97
    • 10 $13.14
    • 100 $10.85
    • 1000 $5.74
    • 10000 $5.74
    Buy Now
    Newark SIHG73N60AE-GE3 Bulk 1
    • 1 $13.67
    • 10 $12.86
    • 100 $10.61
    • 1000 $10.61
    • 10000 $10.61
    Buy Now
    TTI SIHG73N60AE-GE3 Tube 500 50
    • 1 -
    • 10 -
    • 100 $8.13
    • 1000 $7.66
    • 10000 $7.66
    Buy Now
    TME SIHG73N60AE-GE3 1
    • 1 $13.24
    • 10 $11.87
    • 100 $9.43
    • 1000 $8.79
    • 10000 $8.79
    Get Quote

    SIHG73N60 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHG73N60AE-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 60A TO247AC Original PDF
    SIHG73N60AEL-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 600V TO-247AC Original PDF
    SIHG73N60E-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 73A TO247AC Original PDF
    SIHG73N60E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 73A TO247AC Original PDF

    SIHG73N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiHG73N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • Low Input Capacitance (Ciss) 0.039 • Reduced Switching and Conduction Losses


    Original
    PDF SiHG73N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SiHG73N60E

    Abstract: SIHG73N60E-GE3
    Text: SiHG73N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.039 • Reduced Switching and Conduction Losses


    Original
    PDF SiHG73N60E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIHG73N60E-GE3

    Untitled

    Abstract: No abstract text available
    Text: SiHG73N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • Low input capacitance (Ciss) 0.039 • Reduced switching and conduction losses


    Original
    PDF SiHG73N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SiHG73N60E

    Abstract: No abstract text available
    Text: SiHG73N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.039 • Reduced Switching and Conduction Losses


    Original
    PDF SiHG73N60E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SiHG73N60E

    Abstract: No abstract text available
    Text: SiHG73N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses


    Original
    PDF SiHG73N60E O-247AC 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHG73N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.039 • Reduced Switching and Conduction Losses


    Original
    PDF SiHG73N60E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SIHG73N60

    Abstract: No abstract text available
    Text: SiHG73N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original
    PDF SiHG73N60E AN609, 7090m 3271m 2566m 7829m 6687m 5704m 7069m 0190m SIHG73N60

    SIHG73N60

    Abstract: SiHG73N60E
    Text: SiHG73N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.039 • Reduced Switching and Conduction Losses


    Original
    PDF SiHG73N60E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIHG73N60

    SiHG73N60E

    Abstract: SIHG73N60E-GE3 SIHG73N60
    Text: SiHG73N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses


    Original
    PDF SiHG73N60E O-247AC 2002/95/EC 11-Mar-11 SIHG73N60E-GE3 SIHG73N60

    TO-247 FULLPAK Package

    Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction


    Original
    PDF enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E

    draloric potentiometers cermet 581

    Abstract: WISTRON power sequence
    Text: Build Vishay into your Design VISHAY INTERTECHNOLOGY, INC. Corporate Headquarters // 63 Lancaster Avenue Malvern, PA 19355-2120 // United States p: 610.644.1300 // f: 610.296.0657 225289_Vishay_AR_CVR_R1.indd 1-3 ve Di mp Co e rs Di ve www.vishay.com 20 on


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    PDF

    AN844

    Abstract: No abstract text available
    Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note - AN844 How to Select the Right MOSFET for Power Factor Correction Applications Power factor is the ratio of the real power P = Watts to the apparent power (VA = Volt Ampere); the goal is to achieve a power


    Original
    PDF AN844 SiHx15N65E SiHx22N65E SiHx24N65E SiHx5N50D SiHx8N50D SiHx3N50D SiHx12N50C AN844

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. SuPER 12 Featured Products S12 2012 www.vishay.com/ref/2012S12 AND TEC O L OGY INNOVAT I N HN O 19 62-2012 Super 12 Featured Products mkP1848S フィルムコンデンサ 薄型設計のフィルムコンデンサ 2 VCuT05D1-SD0 双方向対称型


    Original
    PDF com/ref/2012S12 mkP1848S VCuT05D1-SD0 clP0603 VMN-MS6703-1205

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836