Datasheet Archive: SIHG30N60E datasheets

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Vishay Siliconix SIHG30N60E-GE3 MOSFET N-CH 600V 29A TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHG30N60E-GE3	Tube	500		1	1 $7.01 10 $4.731 100 $7.01 1000 $2.875 10000 $2.875	Buy Now
Bristol Electronics	SIHG30N60E-GE3		225			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SIHG30N60E-GE3		180			1 $10.476 10 $10.476 100 $6.4602 1000 $5.7618 10000 $5.7618	Buy Now
Vishay Siliconix SIHG30N60E-E3 MOSFET N-CH 600V 29A TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHG30N60E-E3	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SIHG30N60E-GE3 N-CHANNEL 600V - Bulk (Alt: 68W7051)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHG30N60E-GE3	Bulk		9 Weeks, 3 Days	1	1 $3.73 10 $3.73 100 $3.73 1000 $3.29 10000 $3.29	Buy Now
	SIHG30N60E-GE3	Reel		19 Weeks	500	1 - 10 - 100 - 1000 $2.82903 10000 $2.70588	Buy Now
Mouser Electronics	SIHG30N60E-GE3		1,038			1 $5.94 10 $4.69 100 $3.66 1000 $3.29 10000 $3.29	Buy Now
TTI	SIHG30N60E-GE3	Tube	10,000		50	1 - 10 - 100 $3.42 1000 $2.81 10000 $2.75	Buy Now
EBV Elektronik	SIHG30N60E-GE3		75	20 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	SIHG30N60E-GE3		50		1	1 - 10 - 100 $6.06 1000 $6.06 10000 $6.06	Buy Now
Vishay Intertechnologies SIHG30N60E-E3 N-CHANNEL 600V - Rail/Tube (Alt: SIHG30N60E-E3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHG30N60E-E3	Tube		19 Weeks	500	1 - 10 - 100 - 1000 $2.829 10000 $2.7048	Buy Now
Mouser Electronics	SIHG30N60E-E3					1 - 10 - 100 - 1000 $3.71 10000 $3.71	Get Quote
Bristol Electronics	SIHG30N60E-E3		100		1	1 $9.828 10 $4.914 100 $4.2585 1000 $4.2585 10000 $4.2585	Buy Now
Quest Components	SIHG30N60E-E3		80			1 $13.1625 10 $6.5813 100 $6.1425 1000 $6.1425 10000 $6.1425	Buy Now
Vishay Intertechnologies SIHG30N60EGE3 E SERIES POWER MOSFET Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SIHG30N60EGE3		1,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SIHG30N60E Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHG30N60E-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 29A TO247AC		Original	PDF
SIHG30N60E-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 29A TO247AC		Original	PDF

SIHG30N60E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS	Original	PDF	SiHG30N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS	Original	PDF	SiHG30N60E O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS	Original	PDF	SiHG30N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses	Original	PDF	SiHG30N60E 2002/95/EC O-247AC 11-Mar-11
SIHG30N60E Abstract: No abstract text available Text: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS	Original	PDF	SiHG30N60E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SiHG30N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	SiHG30N60E AN609, 5779m 3451m 9055m 7699u 10-Feb-15
Untitled Abstract: No abstract text available Text: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single Generation Two	Original	PDF	SiHG30N60E 2002/95/EC O-247AC 11-Mar-11
Untitled Abstract: No abstract text available Text: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.125 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS	Original	PDF	SiHG30N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.125 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS	Original	PDF	SiHG30N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS	Original	PDF	SiHG30N60E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
TO-247 FULLPAK Package Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction	Original	PDF	enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

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SIHG30N60E Price and Stock

Vishay Siliconix SIHG30N60E-GE3

Vishay Siliconix SIHG30N60E-E3

Vishay Intertechnologies SIHG30N60E-GE3

Vishay Intertechnologies SIHG30N60E-E3

Vishay Intertechnologies SIHG30N60EGE3

SIHG30N60E Datasheets (2)

SIHG30N60E Datasheets Context Search

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SIHG30N60E

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TO-247 FULLPAK Package

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