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    SIEMENS MOSFET 14 Search Results

    SIEMENS MOSFET 14 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    SIEMENS MOSFET 14 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    led and photodiode pair

    Abstract: LED photodiode pair MOSFET SSR of led and photodiode pair SSR schematics mosfet as switch circuit diagram in dc to dc LH1510 ssr schematic circuit mosfet ac switch matched pair JFET
    Text: Solid State Relays Appnote 56 Introduction Siemens offers a full line of miniature MOSFET solid state relays SSRs for use in telecommunication, industrial control, security, and instrumentation applications. MOSFET SSRs have an optocoupler construction, but have a


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    PDF LH1510, led and photodiode pair LED photodiode pair MOSFET SSR of led and photodiode pair SSR schematics mosfet as switch circuit diagram in dc to dc LH1510 ssr schematic circuit mosfet ac switch matched pair JFET

    Spice Model for TMOS Power MOSFETs

    Abstract: scr spice model n mosfet depletion pspice model parameters transistor SMD making code 3f MOTOROLA smd SCR 707n AN1043 1E12 ABM11 BUZ103S
    Text: A Hierarchical Cross-Platform Physics Based MOSFET Model for SPICE and SABER By Jon Mark Hancock Siemens Microelectronics ABSTRACT A physics based MOSFET subcircuit model has been developed and implemented for SABER and several SPICE platforms, including PSPICE, IS-SPICE, and S-SPICE. The model is hierarchical in


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    N60S5

    Abstract: triac ansteuerung 3.5kw pfc smps 450W 2kw mosfet mos sot223, 300v SPN-25 mosfet 1000v smps 5kw 2kw pfc welding
    Text: COOLMOS TM COOLMOSTM von SIEMENS* Ein Quantensprung in der Hochvolt MOSFET-Technologie macht Anwenderträume wahr Lorenz L., März M., Deboy G. Power-MOSFET zählen seit nunmehr 20 Jahren zu den bedeutendsten Komponenten in der Transistorwelt. Mit einem Marktvolumen von 1.4 Mrd. US$ in 1997 und einem prognostizierten


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    relay array driver

    Abstract: Photovoltaic mosfet driver photovoltaic driver
    Text: SIEMENS Data Sheet AT&T Solid-State Relays now manufactured and marketed by Siemens Optoelectronics Division 19000 Homestead Road, Cupertino, CA 95014 LH1262BB/BAC Dual Photovoltaic MOSFET Driver Features Description • ■ ■ ■ ■ The LH1262BB/BAC Photovoltaic MOSFET Driver


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    PDF LH1262BB/BAC LH1262BB/BAC fiS3b32b LH1262BB LH1262BAC 1000-piece fl23b32fc. relay array driver Photovoltaic mosfet driver photovoltaic driver

    Untitled

    Abstract: No abstract text available
    Text: H ISIE G â235bG5 0020077 s SIEMENS SIEMENS A KT IE NGESELLSCHAF 47E T> T -39-/5 SIMOPAC MOSFET Module ^03 A ^DS on) • • • • • • BSM 121 AR (C) = 200 V = 130 A '=» 20 mfl Power module Single switch N channel Enhancement mode Package with insulated metal base plate


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    PDF 235bG5 C67076-S1014-A2 235b05 535b05 T-39-15

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    Abstract: No abstract text available
    Text: SIEMENS L H 1485 OPTICALLY COUPLED HIGH SPEED MOSFET DRIVERS OPTOCOUPLER FEATURES • FastTUm On • Fa«tTurn Off « Low Input Current • Isolation Test Voltage, 5300VACj, ms APPLICATIONS • Motor Drive Controls • iGBT-predrivers • AC/DC Power Inverters


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    PDF 5300VACj, IL485 LH1465 2N2222 LH1485

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 2030W Silicon N-Channei MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code


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    PDF 62702-F1774 T-343

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    Abstract: No abstract text available
    Text: SIEMENS BF 2040W Silicon N-Channei MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code


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    PDF Q62702-F1776 OT-343

    smd transistor 6b-1

    Abstract: 6B1 zener diode smd transistor 6b1 6 pin Optocoupler 1209 optocoupler ci 6pin smd transistor 335 smd L05B transistor MW 882
    Text: SIEMENS LH 1485 OPTICALLY COUPLED HIGH SPEED MOSFET DRIVERS OPTOCOUPLER FEATURES • Fast Turn On • Fast Turn Off Dimensions in inches mm Pin One ID. 131 [21 f f l • Isolation Test Voltage, 5300 VACrMS .248^(6.30) .256 (6.50) APPLICATIONS • Motor Drive Controls


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    PDF IL485 18-pln fl535t smd transistor 6b-1 6B1 zener diode smd transistor 6b1 6 pin Optocoupler 1209 optocoupler ci 6pin smd transistor 335 smd L05B transistor MW 882

    marking code g1s

    Abstract: marking g1s marking G2s
    Text: SIEMENS BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code


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    PDF Q62702-F1774 OT-343 marking code g1s marking g1s marking G2s

    SOT 343 MARKING BF

    Abstract: 2SM10 marking code g1s
    Text: SIEMENS BF 2040W Silicon N-Channei MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code


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    PDF Q62702-F1776 OT-343 SOT 343 MARKING BF 2SM10 marking code g1s

    6B1 zener diode

    Abstract: 5- pin smd IC 775 transistor 335 smd smd transistor 6b-1 SMD 6 PIN IC 2N2222 2n2222 smd transistor transistor 2N2222 SMD configuration transistor 2N2222 SMD smd transistor 3j L05 SMD diode
    Text: SIEMENS LH 1485 OPTICALLY COUPLED HIGH SPEED MOSFET DRIVERS OPTOCOUPLER FEATURES • Fast Turn On • Fast Turn Off • Low Input Current • Isolation Test Voltage, 5300 VACrMS Dimensions in inches mm Pin One ID. 131 [21 f f l .248^(6.30) .256 (6.50) APPLICATIONS


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    PDF IL485 18-pln 6B1 zener diode 5- pin smd IC 775 transistor 335 smd smd transistor 6b-1 SMD 6 PIN IC 2N2222 2n2222 smd transistor transistor 2N2222 SMD configuration transistor 2N2222 SMD smd transistor 3j L05 SMD diode

    Untitled

    Abstract: No abstract text available
    Text: 32E D • ö23b3S0 ' SIPMOS P Channel MOSFET QQ17177 1 « S IP ^ BSS192 SIEMENS/ SPCL-i SEMICONDS_ _ • SIPMOS - enhancement mode • Draln-source voltage Vb» = -240V • Continuous drain current / D = -0.15A • Draln-source on-resistance


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    PDF 23b3S0 QQ17177 BSS192 -240V Q62702-S602 23b320 T-37-25 80f/a;

    MOSFET Tetrode

    Abstract: No abstract text available
    Text: SIEMENS Silicon N-Channei MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution II CM 1 =S Q62702-F1775 II NCs Package


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    PDF Q62702-F1775 OT-143 MOSFET Tetrode

    Silicon N Channel MOSFET Tetrode

    Abstract: marking code g1s
    Text: SIEMENS Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution 1 =S II Q62702-F1773 CM N Es Package


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    PDF Q62702-F1773 100a/A Silicon N Channel MOSFET Tetrode marking code g1s

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    Abstract: No abstract text available
    Text: SIEMENS Silicon N-Channei MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Q62702-F1773 1 =S 2=D CM NEs Package


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    PDF Q62702-F1773 OT-143

    BSM141

    Abstract: No abstract text available
    Text: SIEMENS SIMOPAC MOSFET Module VDS l0 ^ D S o n • • • • • • BSM 141 = 400 V = 60 A = 0.075 Q Power module Single switch N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig . 1 a1) Type Ordering code BSM 141


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    PDF C67076-A1010-A2 BSM141

    marking code 7G sot-143

    Abstract: No abstract text available
    Text: SIEMENS BF 997 Silicon N Channel MOSFET Tetrode • Integrated suppression network against spurious VHF oscillations • For VHF applications, especially in TV tuners with extended VHF band, e. g. in CATV tuners Type Marking Ordering Code tape and reel BF 997


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    PDF Q62702-F1055 OT-143 fl23Sb05 00bbT12 ENM0702I fl23SbOS marking code 7G sot-143

    Untitled

    Abstract: No abstract text available
    Text: 3SE D • flS3b32Q QDlbflOl 2 « S I P Silicon N Channel MOSFET-Tetrode BF994S _ SIEMENS/ SPCL-i SEMICONDS _ • For VHF applications, especially for input and mixer stages with wide tuning range, e.g. In CATV tuners Type Marking Ordering code


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    PDF flS3b32Q BF994S Q62702-F963 Q62702-F1020 T-31-25 23b320

    Untitled

    Abstract: No abstract text available
    Text: BEE D • ¿123b32Q 00170^3 b « S I P T'3 SIPMOS P Channel MOSFET SIEMENS/ SPCL-, SEMICONDS BSP 92 _ Preliminary Data • SIPMOS - enhancement mode • Drain-source voltage Vfcj = -240V • Continuous drain current / o = -0.18A • Draln-source on-resistance


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    PDF 123b32Q -240V Q62702-S653 23b320 00170e

    siemens rs 1002

    Abstract: BF995 siemens rs 1003
    Text: SIEMENS Silicon N Channel MOSFET Tetrode BF 995 • For input and mixer stages in FM and VHF TV tuners Type Marking Ordering Code tape and reel Pir Conf igurat ion 4 1 2 3 BF 995 MB Q62702-F936 S D Gì Package1) G, SOT-143 Maximum Ratings Parameter Symbol


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    PDF Q62702-F936 OT-143 siemens rs 1002 BF995 siemens rs 1003

    35Z diode

    Abstract: No abstract text available
    Text: 32E D • ISIP Ô23ta320 0Q17143 b BSS87 SIPMOS N Channel MOSFET f SIEMENS/ SPCL-, SEMICONDS - s s - • SIPMOS - enhancement mode • Drain-source voltage Vis = 240V • Continuous drain current I o = 0.29A • Drain-source on-resistance • Total power dissipation


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    PDF 23ta320 0Q17143 BSS87 Q62702-S506 S53ti350 35-Z5 35Z diode

    Untitled

    Abstract: No abstract text available
    Text: 32E D m fl23b320 0017060 2 H S I P SIPMOS N Channel MOSFET f * ' 5*1 ^ BSP 89 SIEMENS/ SPCL-, SEMICONDS Preliminary Data • SIPMOS - enhancement mode • Draln-source voltage • Continuous drain current • Draln-source on-resistance • Total power dissipation


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    PDF fl23b320 Q67002-S652 23b320 T-39-05

    pj 989

    Abstract: No abstract text available
    Text: 47E J> m S23SbOS 0Q243GS S • S I E G 1^31-35 Silicon N Channel MOSFET Tetrode BF 989 _ SIEMENS AKTIENGESELLSCHAF • • _ For amplifier and mixer stages in UHF and VHF TV tuners Low input and output capacitance Type Marking Ordering code


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    PDF S23SbOS 0Q243GS Q62702-F874 Q62702-F969 fi23Sb05 BF989 pj 989