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    SIA436DJ Price and Stock

    Vishay Siliconix SIA436DJ-T1-GE3

    MOSFET N-CH 8V 12A PPAK SC70-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIA436DJ-T1-GE3 Digi-Reel 7,564 1
    • 1 $1
    • 10 $0.623
    • 100 $1
    • 1000 $0.28309
    • 10000 $0.28309
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    SIA436DJ-T1-GE3 Cut Tape 7,564 1
    • 1 $1
    • 10 $0.623
    • 100 $1
    • 1000 $0.28309
    • 10000 $0.28309
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    RS SIA436DJ-T1-GE3 Bulk 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.6
    		Get Quote

    Vishay Siliconix SIA436DJ-T4-GE3

    MOSFET N-CH 8V 12A PPAK SC70-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIA436DJ-T4-GE3 Reel 3,000
    • 1 -
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    • 10000 $0.24748
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    Vishay Intertechnologies SIA436DJ-T1-GE3

    N-CHANNEL 8-V (D-S) MOSFET - Tape and Reel (Alt: SIA436DJ-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIA436DJ-T1-GE3 Reel 48,000 6 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.2
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    Mouser Electronics SIA436DJ-T1-GE3 71,924
    • 1 $0.66
    • 10 $0.505
    • 100 $0.353
    • 1000 $0.263
    • 10000 $0.202
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    Verical SIA436DJ-T1-GE3 6,000 3,000
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    • 10000 $0.2078
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    SIA436DJ-T1-GE3 3,000 3,000
    • 1 -
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    • 10000 $0.1961
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    Arrow Electronics SIA436DJ-T1-GE3 6,000 6 Weeks 3,000
    • 1 -
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    • 10000 $0.2069
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    SIA436DJ-T1-GE3 3,000 16 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.1961
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    SIA436DJ-T1-GE3 Cut Strips 2 16 Weeks 1
    • 1 $0.2147
    • 10 $0.2147
    • 100 $0.2147
    • 1000 $0.2147
    • 10000 $0.2147
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    Newark SIA436DJ-T1-GE3 Cut Tape 5
    • 1 $0.585
    • 10 $0.57
    • 100 $0.409
    • 1000 $0.409
    • 10000 $0.409
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    SIA436DJ-T1-GE3 Reel 3,000
    • 1 -
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    SIA436DJ-T1-GE3 Reel 3,000
    • 1 $0.282
    • 10 $0.282
    • 100 $0.282
    • 1000 $0.282
    • 10000 $0.255
    		Buy Now
    Quest Components SIA436DJ-T1-GE3 1,464
    • 1 $1.2
    • 10 $1.2
    • 100 $0.6
    • 1000 $0.48
    • 10000 $0.48
    		Buy Now
    TTI SIA436DJ-T1-GE3 Reel 9,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.204
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    TME SIA436DJ-T1-GE3 3,000
    • 1 -
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    • 10000 $0.315
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    Avnet Asia SIA436DJ-T1-GE3 8 Weeks 3,000
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    EBV Elektronik SIA436DJ-T1-GE3 7 Weeks 3,000
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    Vishay Intertechnologies SIA436DJ-T4-GE3

    Trans MOSFET N-CH 8V 12A 6-Pin SC-70 T/R - Tape and Reel (Alt: SIA436DJ-T4-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIA436DJ-T4-GE3 Reel 18 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.19926
    		Buy Now
    Mouser Electronics SIA436DJ-T4-GE3 2,990
    • 1 $0.6
    • 10 $0.539
    • 100 $0.368
    • 1000 $0.261
    • 10000 $0.202
    		Buy Now
    TTI SIA436DJ-T4-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.211
    		Buy Now

    Vishay Intertechnologies SIA414DJ-T1-GE3

    MOSFETs 8.0V 12A 19W 11mohm @ 4.5V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SIA414DJ-T1-GE3 Reel 3,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.344
    		Buy Now
    Find more SIA436DJ price and stock on Findchips.com

    SIA436DJ Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIA436DJ-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 8V 12A SC70-6L Original PDF
    SIA436DJ-T4-GE3 Vishay Siliconix MOSFET N-CH 8V 12A PPAK SC70-6 Original PDF

    SIA436DJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiA436DJ www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiA436DJ 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA436DJ Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) Max. ID (A)a 0.0094 at VGS = 4.5 V 12 0.0105 at VGS = 2.5 V 12 0.0125 at VGS = 1.8 V 12 0.0180 at VGS = 1.5 V 12 0.0360 at VGS = 1.2 V 12 VDS (V) 8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiA436DJ SC-70 2002/95/EC SC-70electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    marking code aox

    Abstract: No abstract text available
    Text: New Product SiA436DJ Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) Max. ID (A)a 0.0094 at VGS = 4.5 V 12 0.0105 at VGS = 2.5 V 12 0.0125 at VGS = 1.8 V 12 0.0180 at VGS = 1.5 V 12 0.0360 at VGS = 1.2 V 12 VDS (V) 8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiA436DJ SC-70 2002/95/EC SC-70-6L-Single 11-Mar-11 marking code aox

    marking AOX

    Abstract: MOSFET marking k2 dual vishay siliconix code marking code marking AOX
    Text: New Product SiA436DJ Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) Max. ID (A)a 0.0094 at VGS = 4.5 V 12 0.0105 at VGS = 2.5 V 12 0.0125 at VGS = 1.8 V 12 0.0180 at VGS = 1.5 V 12 0.0360 at VGS = 1.2 V 12 VDS (V) 8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiA436DJ SC-70 2002/95/EC SC-70-6L-Single 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking AOX MOSFET marking k2 dual vishay siliconix code marking code marking AOX

    S-112-302

    Abstract: SiA436DJ 63605
    Text: SPICE Device Model SiA436DJ www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiA436DJ 11-Mar-11 S-112-302 63605

    Untitled

    Abstract: No abstract text available
    Text: SiA436DJ_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiA436DJ AN609, 0611u 4466u 6775m 9423u 9951m 1505m 3521m 15-Nov-11

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance PowerPAK SC-70 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


    Original     		PDF SC-70 SiA519EDJ com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1402

    SI1489EDH

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings at VGS = 1.2 V 1.2 V Rated MOSFETs Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS • Optimized for use with the low-voltage core ICs in portable electronics systems


    Original     		PDF SiA920DJ SC-70 SiB914DK SC-75 Si1011X Si8805EDB com/mosfets/12-rated-on-res/ com/mosfets/15-rated-on-res/ VMN-PT0103-1402 SI1489EDH

    SiA427DJ

    Abstract: SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance AND TEC I INNOVAT O L OGY PowerPAK SC-70 N HN POWER MOSFETs O 19 62-2012 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


    Original     		PDF SC-70 SC-70 com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1209 SiA427DJ SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    SiB914

    Abstract: SiA427DJ si2329ds si8802
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - On-Resistance Ratings at VGS = 1.2 V AND TEC I INNOVAT O L OGY 1.2 V Rated MOSFETs N HN POWER MOSFETs O 19 62-2012 Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS


    Original     		PDF SC-70 SC-75 com/mosfets/12-rated-on-res/ com/mosfets/15-rated-on-res/ VMN-PT0103-1209 SiB914 SiA427DJ si2329ds si8802