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Vishay Siliconix SI9945BDY-T1-GE3 MOSFET 2N-CH 60V 5.3A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI9945BDY-T1-GE3	Cut Tape	11,940		1	1 $1.39 10 $0.879 100 $1.39 1000 $0.41442 10000 $0.41442	Buy Now
	SI9945BDY-T1-GE3	Digi-Reel	11,940		1	1 $1.39 10 $0.879 100 $1.39 1000 $0.41442 10000 $0.41442	Buy Now
	SI9945BDY-T1-GE3	Reel	10,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.37009	Buy Now
RS	SI9945BDY-T1-GE3	Bulk	5,000	72 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $1.07	Buy Now
Bristol Electronics	SI9945BDY-T1-GE3		55			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI9945BDY-T1-GE3		39			1 $2.125 10 $1.955 100 $1.7 1000 $1.7 10000 $1.7	Buy Now
UMW SI9945BDY MOSFET 2N-CH 60V 4.3A 8SOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI9945BDY	Cut Tape	3,000		1	1 $0.81 10 $0.541 100 $0.81 1000 $0.269 10000 $0.269	Buy Now
	SI9945BDY	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.23643	Buy Now
	SI9945BDY	Digi-Reel	3,000		1	1 $0.81 10 $0.541 100 $0.81 1000 $0.269 10000 $0.269	Buy Now
Vishay Siliconix SI9945AEY-T1 MOSFET 2N-CH 60V 3.7A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI9945AEY-T1	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $1.1375	Buy Now
Vishay Intertechnologies SI9945BDY-T1-GE3 DUAL N-CHANNEL 60-V (D-S) MOSFET - Tape and Reel (Alt: SI9945BDY-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI9945BDY-T1-GE3	Reel	12,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.30872	Buy Now
Verical	SI9945BDY-T1-GE3		117,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.3343	Buy Now
	SI9945BDY-T1-GE3		52,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.3155	Buy Now
Arrow Electronics	SI9945BDY-T1-GE3		117,500	6 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.3309	Buy Now
	SI9945BDY-T1-GE3		52,500	9 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.3155	Buy Now
Newark	SI9945BDY-T1-GE3	Cut Tape	33,536		5	1 $0.962 10 $0.788 100 $0.63 1000 $0.63 10000 $0.63	Buy Now
	SI9945BDY-T1-GE3	Reel	7,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.417	Buy Now
Bristol Electronics	SI9945BDY-T1-GE3		1,330			1 - 10 - 100 - 1000 - 10000 -	Get Quote

TTI	SI9945BDY-T1-GE3	Reel	25,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.32	Buy Now
	SI9945BDY-T1-GE3	Cut Tape	2,660		10	1 - 10 $0.551 100 $0.551 1000 $0.551 10000 $0.551	Buy Now
TME	SI9945BDY-T1-GE3		11,628		1	1 $0.656 10 $0.626 100 $0.525 1000 $0.488 10000 $0.469	Buy Now
ComSIT USA	SI9945BDY-T1-GE3		2,732			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	SI9945BDY-T1-GE3			15 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip Stock	SI9945BDY-T1-GE3		1,656			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SI9945BDY-T1-GE3		82,500	7 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	SI9945BDY-T1-GE3		65,000		1	1 - 10 - 100 - 1000 - 10000 $0.5065	Buy Now
Vishay Intertechnologies SI9945AEY-T1-E3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI9945AEY-T1-E3		1,053			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI9945AEY-T1-E3		842			1 $4.29 10 $4.29 100 $2.6455 1000 $2.3595 10000 $2.3595	Buy Now
ComSIT USA	SI9945AEY-T1-E3		178			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SI9945 Datasheets (11)

Part	Manufacturer	Description	Datasheet Type	PDF
Si9945AEY	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
SI9945AEY	Vishay	Dual N-Channel 60-V (D-S), 175°C MOSFET	Original	PDF
Si9945AEY	Vishay Intertechnology	Dual N-Channel Enhancement-Mode MOSFET	Original	PDF
SI9945AEY	General Semiconductor	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N-Channel, 60V, Dual, Pkg Style SO-8	Scan	PDF
Si9945AEY SPICE Device Model	Vishay	Dual N-Channel Enhancement-Mode MOSFET	Original	PDF
SI9945AEY-T1	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 60V 3.7A 8SOIC	Original	PDF
SI9945BDY-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 60V 5.3A 8-SOIC	Original	PDF
SI9945DY	Fairchild Semiconductor	Dual N-Channel Enhancement Mode MOSFET	Original	PDF
Si9945DY	Fairchild Semiconductor	Dual N-Channel Enhancement Mode MOSFET	Original	PDF
SI9945DY	Temic Semiconductors	Dual N-Channel Enhancement-Mode MOSFET	Original	PDF
Si9945DY	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF

SI9945 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
14093 Abstract: 75431 Text: Si9945BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	Si9945BDY AN609, 3203u 3659m 8029m 3567u 2443m 3998m 0795m 14093 75431
si9945b Abstract: SI9945BDY SI9945BDY-T1-GE si9945bd Text: New Product Si9945BDY Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 VDS (V) 60 Qg (Typ.) 13 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si9945BDY Si9945BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si9945b SI9945BDY-T1-GE si9945bd
Untitled Abstract: No abstract text available Text: Si9945DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching	Original	PDF	Si9945DY
Si9945AEY-T1-E3 Abstract: Si9945AEY SI9945 Si9945AEY-T1-GE3 SI9945A Text: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	PDF	Si9945AEY 2002/95/EC Si9945AEY-T1-E3 Si9945AEY-T1-GE3 18-Jul-08 SI9945 SI9945A
SI9945AEY-T1 Abstract: No abstract text available Text: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	PDF	Si9945AEY 2002/95/EC Si9945AEY-T1-E3 Si9945AEY-T1-GE3 11-Mar-11 SI9945AEY-T1
Si9945AEY Abstract: Si9945AEY-T1 Si9945AEY-T1-E3 Text: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • TrenchFET Power MOSFETs • Maximum Junction Temperature: 175 °C Rated	Original	PDF	Si9945AEY Si9945AEY-T1 Si9945AEY-T1-E3 08-Apr-05
si9950 Abstract: Si9950DY Si9948DY SI9945 Si9945DY Text: Si9950DY Complementary MOSFET Half-Bridge Product Summary VDS V N- or P-Channel 50 rDS(on) (W) ID (A) 0.3 @ VGS = 10 V "2.0 1.0 @ VGS = 5 V "1.2 Alternate Solution: one Si9948DY and one Si9945DY V+ V+ SO-16 GND 1 16 GND OUTPUT 2 15 OUTPUT OUTPUT 3 14 OUTPUT	Original	PDF	Si9950DY Si9948DY Si9945DY SO-16 P-38889--Rev. 17-Oct-94 si9950 SI9945
SI9959DY Abstract: SI9945 Si9945DY SI9959 Text: Si9959DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.30 @ VGS = 10 V "2.0 0.50 @ VGS = 5 V "0.6 For higher performance see Si9945DY D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET	Original	PDF	Si9959DY Si9945DY S-47958--Rev. 15-Apr-96 SI9945 SI9959
Si9945AEY Abstract: No abstract text available Text: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.080 @ VGS = 10 V "3.7 0.100 @ VGS = 4.5 V "3.4 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET	Original	PDF	Si9945AEY 08-Apr-05
Si9959DY Abstract: SI9945 Si9945DY A86V Text: Si9959DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.30 @ VGS = 10 V "2.0 0.50 @ VGS = 5 V "0.6 For higher performance see Si9945DY D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET	Original	PDF	Si9959DY Si9945DY S-47958--Rev. 15-Apr-96 SI9945 A86V
Si9945aey Abstract: SI9945 Text: SPICE Device Model Si9945AEY Vishay Siliconix Dual N-Channel Enhancement-Mode MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si9945AEY 18-Apr-01 SI9945
SI9945 Abstract: Si9945AEY S-5725 Text: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.080 @ VGS = 10 V "3.7 0.100 @ VGS = 4.5 V "3.4 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET	Original	PDF	Si9945AEY S-57253--Rev. 24-Feb-98 SI9945 S-5725
Si9945AEY-T1 Abstract: SI9945 SQ9945AEY-T1 AECQ101 SI9945AEY Si9945AEY SPICE Device Model Text: Si9945AEY/SQ9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • TrenchFET Power MOSFETs • Maximum Junction Temperature: 175 °C Rated	Original	PDF	Si9945AEY/SQ9945AEY Si9945AEY-T1 SQ9945AEY-T1 AECQ101 08-Apr-05 SI9945 SQ9945AEY-T1 SI9945AEY Si9945AEY SPICE Device Model
Si9945BDY-T1-GE3 Abstract: Si9945BDY SI9945BDY-T1-GE Text: New Product Si9945BDY Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 VDS (V) 60 Qg (Typ.) 13 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si9945BDY Si9945BDY-T1-GE3 11-Mar-11 SI9945BDY-T1-GE

Si9955DY Siliconix Abstract: Si9945DY Si9955DY Text: Si9955DY Siliconix Dual NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 50 rDS(on) (W) ID (A) 0.13 @ VGS = 10 V "3.0 0.20 @ VGS = 4.5 V "1.5 Recommend upgrade: Si9945DY D1 D1 D2 D2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View G1 G2 S1	Original	PDF	Si9955DY Si9945DY P38889Rev. Si9955DY Siliconix
Si9959DY Abstract: Si9945DY Text: Si9959DY Siliconix Dual NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.30 @ VGS = 10 V "2.0 0.50 @ VGS = 5 V "0.6 For higher performance see Si9945DY D1 D1 D2 D2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View	Original	PDF	Si9959DY Si9945DY S-42911--Rev.
Untitled Abstract: No abstract text available Text: New Product Si9945BDY Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 VDS (V) 60 Qg (Typ.) 13 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si9945BDY Si9945BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
SI9945 Abstract: Si9945AEY Text: SPICE Device Model Si9945AEY Dual N-Channel Enhancement-Mode MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model Subcircuit • Level 3 MOS • Applicable for Both Linear and Switchmode • Applicable Over a -55 to 125°C Temperature Range	Original	PDF	Si9945AEY SI9945
SI9950DY Abstract: si9950 6V25V SI9945 Si9948DY Si9945DY Text: Si9950DY Complementary MOSFET Half-Bridge Product Summary VDS V N- or P-Channel 50 rDS(on) (W) ID (A) 0.3 @ VGS = 10 V "2.0 1.0 @ VGS = 5 V "1.2 Alternate Solution: one Si9948DY and one Si9945DY V+ V+ SO-16 GND 1 16 GND OUTPUT 2 15 OUTPUT OUTPUT 3 14 OUTPUT	Original	PDF	Si9950DY Si9948DY Si9945DY SO-16 P-38889--Rev. 17-Oct-94 si9950 6V25V SI9945
SI9945BDY-T1-GE3 Abstract: SI9945 SI9945BDY si9945b Text: New Product Si9945BDY Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 VDS (V) 60 Qg (Typ.) 13 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si9945BDY Si9945BDY-T1-GE3 18-Jul-08 SI9945 si9945b
SI9945AEY-T1-E3 Abstract: Si9945aey SI9945 SI9945AEY-T1 Text: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • TrenchFET Power MOSFETs • Maximum Junction Temperature: 175 °C Rated	Original	PDF	Si9945AEY Si9945AEY-T1 Si9945AEY-T1-E3 18-Jul-08 SI9945
SI9945AEY-T1-E3 Abstract: SI9945BDY-T1-GE3 Si9945aey Si9945BDY SI9945 Si9945AEY-T1 MOSFET 20V Text: Specification Comparison Vishay Siliconix Si9945BDY vs. Si9945AEY Description: Package: Pin Out: Dual N-Channel, 20-V D-S MOSFET SO-8 Identical Part Number Replacements: Si9945BDY-T1-GE3 replaces Si9945AEY-T1-E3 Si9945BDY-T1-GE3 replaces Si9945AEY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted	Original	PDF	Si9945BDY Si9945AEY Si9945BDY-T1-GE3 Si9945AEY-T1-E3 Si9945AEY-T1 25-May-09 SI9945 MOSFET 20V
SI9945 Abstract: Si9945DY Text: Si9945DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching	Original	PDF	Si9945DY SI9945
SI9945 Abstract: Siliconix Si9945AEY Text: Si9945AEY Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET New Product PRODUCT SUMMARY VDS (V) 60 RDS(ON) (W) ID (A) 0.080 @ VGS = 10 V "3.7 0.100 @ VGS = 4.5 V "3.4 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET	Original	PDF	Si9945AEY S-57253--Rev. 24-Feb-98 SI9945 Siliconix

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Vishay Siliconix SI9945BDY-T1-GE3

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SI9945 Datasheets (11)

SI9945 Datasheets Context Search

14093

si9945b

Untitled

Si9945AEY-T1-E3

SI9945AEY-T1

Si9945AEY

si9950

SI9959DY

Si9945AEY

Si9959DY

Si9945aey

SI9945

Si9945AEY-T1

Si9945BDY-T1-GE3

Si9955DY Siliconix

Si9959DY

Untitled

SI9945

SI9950DY

SI9945BDY-T1-GE3

SI9945AEY-T1-E3

SI9945AEY-T1-E3

SI9945

SI9945