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    SI9934 Search Results

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    SI9934 Price and Stock

    Rochester Electronics LLC SI9934DY

    MOSFET 2P-CH 20V 5A 8SOIC
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    DigiKey SI9934DY Bulk 1,268
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    Vishay Siliconix SI9934BDY-T1-E3

    MOSFET 2P-CH 12V 4.8A 8SOIC
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    SI9934BDY-T1-E3 Digi-Reel 1
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    Vishay Siliconix SI9934BDY-T1-GE3

    MOSFET 2P-CH 12V 4.8A 8SOIC
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    SI9934BDY-T1-GE3 Digi-Reel 1
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    Vishay BLH SI9934BDY-T1-E3

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    Bristol Electronics SI9934BDY-T1-E3 2,302 3
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    Vishay Intertechnologies SI9934BDY-T1-E3

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    Bristol Electronics SI9934BDY-T1-E3 1,796
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    Quest Components SI9934BDY-T1-E3 1,841
    • 1 $2.6
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    SI9934BDY-T1-E3 1,572
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    SI9934BDY-T1-E3 1,436
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    Find more SI9934 price and stock on Findchips.com

    SI9934 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI9934BDY Vishay Siliconix MOSFETs Original PDF
    SI9934BDY-E3 Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET Original PDF
    Si9934BDY SPICE Device Model Vishay Dual P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI9934BDY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 12V 4.8A 8-SOIC Original PDF
    SI9934BDY-T1-E3 Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI9934BDY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 12V 4.8A 8SOIC Original PDF
    SI9934DY Fairchild Semiconductor Dual P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    Si9934DY Fairchild Semiconductor Dual P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    Si9934DY Siliconix Dual P-Channel 2.5-V (G-S) Rated MOSFET Original PDF
    Si9934DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI9934DY Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI9934DY_NL Fairchild Semiconductor Dual P-Channel 2.5V Specified PowerTrenc MOSFET Original PDF
    SI9934DY-T1 Vishay Intertechnology Dual P-Channel 2.5-V (G-S) MOSFET Original PDF

    SI9934 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si9934DY

    Abstract: No abstract text available
    Text: Si9934DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –12 ID (A) 0.05 @ VGS = –4.5 V "5 0.074 @ VGS = –2.5 V "4.1 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 D2 P-Channel MOSFET D2


    Original     		PDF Si9934DY S-49532--Rev. 02-Feb-98

    Si9934BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si9934BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si9934BDY 18-Jul-08

    Si9934DY

    Abstract: Si6943DQ Si9933ADY
    Text: Si9933ADY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.075 @ VGS = –4.5 V "3.4 0.105 @ VGS = –3.0 V "2.9 0.115 @ VGS = –2.7 V "2.6 Recommended upgrade: Si9934DY Lower profile/smaller size see: Si6943DQ S1


    Original     		PDF Si9933ADY Si9934DY Si6943DQ S-51359--Rev. 18-Dec-96

    SI9934BDY

    Abstract: No abstract text available
    Text: Si9934BDY Vishay Siliconix New Product Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −12 FEATURES rDS(on) (W) ID (A) 0.035 @ VGS = −4.5 V −6.4 0.056 @ VGS = −2.5 V −5.1 D TrenchFETr Power MOSFET S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2


    Original     		PDF Si9934BDY Si9934BDY-T1 S-32222--Rev. 03-Nov-03

    Untitled

    Abstract: No abstract text available
    Text: Si9934BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.035 at VGS = - 4.5 V - 6.4 0.056 at VGS = - 2.5 V - 5.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si9934BDY 2002/95/EC Si9934BDY-T1-E3 Si9934BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si9934BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.035 at VGS = - 4.5 V - 6.4 0.056 at VGS = - 2.5 V - 5.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si9934BDY 2002/96/EC Si9934BDY-T1-E3 Si9934BDY-T1-GE3 18-Jul-08

    Si6943DQ

    Abstract: Si9933ADY Si9934DY
    Text: Si9933ADY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.075 @ VGS = –4.5 V "3.4 0.105 @ VGS = –3.0 V "2.9 0.115 @ VGS = –2.7 V "2.6 Recommended upgrade: Si9934DY Lower profile/smaller size see: Si6943DQ S1


    Original     		PDF Si9933ADY Si9934DY Si6943DQ 51359--Rev. 18-Dec-96

    Si9934DY

    Abstract: No abstract text available
    Text: Si9934DY Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) –12 rDS(on) (W) ID (A) 0.05 @ VGS = –4.5 V "5 0.074 @ VGS = –2.5 V "4.1 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2 D1 D1 D2 D2 P-Channel MOSFET P-Channel MOSFET


    Original     		PDF Si9934DY S-49520--Rev. 18-Dec-96

    SI9934BDY

    Abstract: No abstract text available
    Text: Si9934BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −12 FEATURES rDS(on) (W) ID (A) 0.035 @ VGS = −4.5 V −6.4 0.056 @ VGS = −2.5 V −5.1 D TrenchFETr Power MOSFET S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2


    Original     		PDF Si9934BDY Si9934BDY--E3 Si9934BDY-T1--E3 18-Jul-08

    SI9934BDY

    Abstract: No abstract text available
    Text: Si9934BDY Vishay Siliconix New Product Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −12 FEATURES rDS(on) (W) ID (A) 0.035 @ VGS = −4.5 V −6.4 0.056 @ VGS = −2.5 V −5.1 D TrenchFETr Power MOSFET S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2


    Original     		PDF Si9934BDY Si9934BDY--E3 Si9934BDY-T1--E3 25Cycle S-32411--Rev. 24-Nov-03

    Si9934BDY

    Abstract: Si9934BDY-T1-E3 Si9934DY Si9934DY-T1
    Text: Specification Comparison Vishay Siliconix Si9934BDY vs. Si9934DY Description: Dual P-Channel, 2.5 V G-S MOSFET Package: SO-8 Pin Out: Identical Part Number Replacements: Si9934BDY-T1-E3 Replaces Si9934DY-T1-E3 Si9934BDY-T1 Replaces Si9934DY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si9934BDY Si9934DY Si9934BDY-T1-E3 Si9934DY-T1-E3 Si9934BDY-T1 Si9934DY-T1 70e-Source 10-Nov-06

    Si9934BDY

    Abstract: No abstract text available
    Text: Si9934BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −12 FEATURES rDS(on) (W) ID (A) 0.035 @ VGS = −4.5 V −6.4 0.056 @ VGS = −2.5 V −5.1 D TrenchFETr Power MOSFET S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2


    Original     		PDF Si9934BDY Si9934BDY--E3 Si9934BDY-T1--E3 08-Apr-05

    Si9934DY

    Abstract: P-channel power mosfet SO-8 Si6943DQ Si9933DY S-47590
    Text: Si9933DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V "2.6 Recommended upgrade: Si9934DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6943DQ


    Original     		PDF Si9933DY Si9934DY Si6943DQ S-47590--Rev. 30-Apr-96 P-channel power mosfet SO-8 S-47590

    Si9934DY

    Abstract: No abstract text available
    Text: Si9934DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –12 ID (A) 0.05 @ VGS = –4.5 V "5 0.074 @ VGS = –2.5 V "4.1 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 D2 P-Channel MOSFET D2


    Original     		PDF Si9934DY 18-Jul-08

    Si9934DY

    Abstract: MS4080
    Text: Si9934DY Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) –12 12 rDS(on) (W) ID (A) 0.05 @ VGS = –4.5 V "5 0.074 @ VGS = –2.5 V "4.1 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2 D1 D1 D2 D2 P-Channel MOSFET P-Channel MOSFET


    Original     		PDF Si9934DY S-49532--Rev. 02-Feb-98 MS4080

    MS-4075

    Abstract: Si6943DQ Si9933DY Si9934DY
    Text: Si9933DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V "2.6 Recommended upgrade: Si9934DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6943DQ


    Original     		PDF Si9933DY Si9934DY Si6943DQ S-47590--Rev. 30-Apr-96 MS-4075

    Si6943DQ

    Abstract: Si9933DY Si9934DY MS-4075
    Text: Si9933DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V "2.6 Recommended upgrade: Si9934DY Lower profile/smaller size see: Si6943DQ S1 S2 SO-8


    Original     		PDF Si9933DY Si9934DY Si6943DQ S-47590--Rev. 30-Apr-96 MS-4075

    Si9934DY

    Abstract: No abstract text available
    Text: Si9934DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –12 ID (A) 0.05 @ VGS = –4.5 V "5 0.074 @ VGS = –2.5 V "4.1 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 D2 P-Channel MOSFET D2


    Original     		PDF Si9934DY 08-Apr-05

    Si9934BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si9934BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si9934BDY 07-Oct-03

    Si9934BDY

    Abstract: No abstract text available
    Text: Si9934BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −12 FEATURES rDS(on) (W) ID (A) 0.035 @ VGS = −4.5 V −6.4 0.056 @ VGS = −2.5 V −5.1 D TrenchFETr Power MOSFET S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2


    Original     		PDF Si9934BDY Si9934BDY--E3 Si9934BDY-T1--E3 S-41578--Rev. 23-Aug-04

    8439

    Abstract: AN609 Si9934BDY
    Text: Si9934BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si9934BDY AN609 10-Aug-07 8439

    C5074

    Abstract: PF446 Si9934DY
    Text: Si9934DY Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


    Original     		PDF Si9934DY C5074 PF446

    VDS16

    Abstract: D-16 Si6943DQ Si9934DY 5121 M
    Text: Tem ic SÌ9933DY S e m i c o n d u c t o r s Dual P-Channel Enhancement-Mode MOSFET Product Summary VDs V -20 r DS(on) (£2) I d (A) 0.11 @ VGs = -+-5 v ±3.4 0.15 @VGS =-3.0 V ±2.9 0.19 @ VGs = -2.7 V ±2.6 Recommended upgrade: Si9934DY Lower profile/smaller size— see LITE FOOT equivalent: Si6943DQ


    OCR Scan     		PDF 9933dy Si9934DY Si6943DQ S-47590â 30-Apr-96 25473S DD17flflti VDS16 D-16 5121 M

    Untitled

    Abstract: No abstract text available
    Text: Tem ic Si9934DY Semiconductors Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary V D S (V ) r DS(on) (£2) I d (A ) 0.05 @ V Gs = -4 .5 V ±5 0.074 @ V GS = -2 .5 V ± 4 .1 12 i Si o S2 p SO -8 si [~r ~8~l Di Gi [ t ; X S2 I X ~6~| D2 X ~~5~| D2 g2 °i


    OCR Scan     		PDF Si9934DY S-49532â 02-Feb-98