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Vishay Siliconix SI7145DP-T1-GE3 MOSFET P-CH 30V 60A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI7145DP-T1-GE3	Reel	40,351		3,000	1 - 10 - 100 - 1000 - 10000 $0.925	Buy Now
	SI7145DP-T1-GE3	Digi-Reel	40,351		1	1 $3.02 10 $1.96 100 $3.02 1000 $1.01333 10000 $1.01333	Buy Now
	SI7145DP-T1-GE3	Cut Tape	40,351		1	1 $3.02 10 $1.96 100 $3.02 1000 $1.01333 10000 $1.01333	Buy Now
RS	SI7145DP-T1-GE3	Bulk	7,923	3 Weeks	1	1 $0.99 10 $0.99 100 $0.99 1000 $0.99 10000 $0.99	Buy Now
New Advantage Corporation	SI7145DP-T1-GE3		6,000		1	1 - 10 - 100 - 1000 - 10000 $1.19	Buy Now
Vishay Intertechnologies SI7145DP-T1-GE3 P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI7145DP-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI7145DP-T1-GE3	Reel		17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.91021	Buy Now
Mouser Electronics	SI7145DP-T1-GE3		98,561			1 $2.17 10 $1.6 100 $1.23 1000 $0.996 10000 $0.925	Buy Now
Newark	SI7145DP-T1-GE3	Cut Tape			3,000	1 - 10 - 100 - 1000 $1.38 10000 $1.38	Buy Now
	SI7145DP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.948	Buy Now
Quest Components	SI7145DP-T1-GE3		2,312			1 $3.708 10 $3.708 100 $3.708 1000 $1.854 10000 $1.854	Buy Now
	SI7145DP-T1-GE3		40			1 $3 10 $3 100 $1.125 1000 $1.125 10000 $1.125	Buy Now
TTI	SI7145DP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.93	Buy Now

TME	SI7145DP-T1-GE3				1	1 $1.9 10 $1.79 100 $1.58 1000 $1.46 10000 $1.46	Get Quote
Chip 1 Exchange	SI7145DP-T1-GE3		17,297			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	SI7145DP-T1-GE3			19 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $1.5602	Buy Now
Chip-Germany GmbH	SI7145DP-T1-GE3		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SI7145DP-T1-GE3			18 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
. SI7145DP-T1-GE3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI7145DP-T1-GE3		26,121			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay BLH SI7145DP-T1-GE3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI7145DP-T1-GE3		50		3	1 - 10 $1.6875 100 $1.4062 1000 $1.4062 10000 $1.4062	Buy Now
Others SI7145DP-T1-GE3 INSTOCK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip 1 Exchange	SI7145DP-T1-GE3		2,894			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SI7145 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI7145DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 60A 8-SOIC		Original	PDF

SI7145 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: New Product Si7145DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0026 at VGS = - 10 V - 60d 0.00375 at VGS = - 4.5 V - 60d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si7145DP 2002/95/EC Si7145DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Si7145DP Abstract: si7145 EFB810-3/4-3/Si7145DP Text: SPICE Device Model Si7145DP Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si7145DP 18-Jul-08 si7145 EFB810-3/4-3/Si7145DP
transistor c 6073 Abstract: mosfet 0018 AN609 Si7145DP si7145 Text: Si7145DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	Si7145DP AN609, 02-Apr-09 transistor c 6073 mosfet 0018 AN609 si7145
Si7145DP Abstract: si7145 Text: New Product Si7145DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0026 at VGS = - 10 V - 60d 0.00375 at VGS = - 4.5 V - 60d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si7145DP 2002/95/EC Si7145DP-T1-GE3 11-Mar-11 si7145
si7145 Abstract: No abstract text available Text: New Product Si7145DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0026 at VGS = - 10 V - 60d 0.00375 at VGS = - 4.5 V - 60d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si7145DP 2002/95/EC Si7145DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si7145
Untitled Abstract: No abstract text available Text: New Product Si7145DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0026 at VGS = - 10 V - 60d 0.00375 at VGS = - 4.5 V - 60d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si7145DP 2002/95/EC Si7145DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
EFB810-3/4-3/Si7145DP Abstract: No abstract text available Text: SPICE Device Model Si7145DP www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si7145DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 EFB810-3/4-3/Si7145DP
Si7145DP Abstract: No abstract text available Text: New Product Si7145DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0026 at VGS = - 10 V - 60d 0.00375 at VGS = - 4.5 V - 60d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si7145DP 2002/95/EC Si7145DP-T1-GE3 18-Jul-08
Untitled Abstract: No abstract text available Text: New Product Si7145DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0026 at VGS = - 10 V - 60d 0.00375 at VGS = - 4.5 V - 60d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si7145DP 2002/95/EC Si7145DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: New Product Si7145DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0026 at VGS = - 10 V - 60d 0.00375 at VGS = - 4.5 V - 60d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si7145DP 2002/95/EC Si7145DP-T1-GE3 11-Mar-11
FSQ510 Equivalent Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178	Original	PDF	GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Arduino Mega2560 Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM	Original	PDF	CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
35HVH220M Abstract: No abstract text available Text: 5 4 3 2 1 REVISION HISTORY ECO REV DESCRIPTION APPROVED DATE _ 2 PRODUCTION CHARLIE Z. 3-27-14 VIN E1 15V - 55V C1 R38 VIN E3 + GND D E4 C3 56uF 63V 63HVH56M + C2 56uF 63V 63HVH56M 5.1 0805 C34 C33 C32 C29 OPT 1210 C23 C16 4.7uF 100V 1210 36 R1 100k 0.1uF	Original	PDF	63HVH56M LTC4020EUHF SBR0560S1 B360A SiR664DP 35HVH220M
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of	Original	PDF	SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402

Untitled Abstract: No abstract text available Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,	Original	PDF	1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406
Si7141 Abstract: SiA447DJ SI7615A Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on	Original	PDF	SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	PDF	Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
SI4497 Abstract: No abstract text available Text: V is h ay I n t e rt e c h n olo g y, I n c . Power MOSFETs Key features and Benefits • Lowest on-resistance per area achieved for a p-channel provides on-resistance down to half of previous industry best • Down to sub 2 mΩ in SO-8 footprint area • Variety of package sizes, from PowerPAK SO-8 down to 1.6 mm x 1.6 mm	Original	PDF	SC-75 VMN-PT0197-1006 SI4497

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SI7145 Price and Stock

Vishay Siliconix SI7145DP-T1-GE3

Vishay Intertechnologies SI7145DP-T1-GE3

. SI7145DP-T1-GE3

Vishay BLH SI7145DP-T1-GE3

Others SI7145DP-T1-GE3

SI7145 Datasheets (1)

SI7145 Datasheets Context Search

Untitled

Si7145DP

transistor c 6073

Si7145DP

si7145

Untitled

EFB810-3/4-3/Si7145DP

Si7145DP

Untitled

Untitled

FSQ510 Equivalent

Arduino Mega2560

35HVH220M

Untitled

Untitled

Si7141

si7121

Diode SOT-23 marking 15d

SI4497