Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI4963 Search Results

    SF Impression Pixel

    SI4963 Price and Stock

    Vishay Siliconix SI4963BDY-T1-E3

    MOSFET 2P-CH 20V 4.9A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4963BDY-T1-E3 Digi-Reel 1,947 1
    • 1 $2.05
    • 10 $1.311
    • 100 $2.05
    • 1000 $0.64658
    • 10000 $0.64658
    		Buy Now
    SI4963BDY-T1-E3 Cut Tape 1,947 1
    • 1 $2.05
    • 10 $1.311
    • 100 $2.05
    • 1000 $0.64658
    • 10000 $0.64658
    		Buy Now
    SI4963BDY-T1-E3 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.58335
    		Buy Now
    RS SI4963BDY-T1-E3 Bulk 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.46
    		Get Quote
    New Advantage Corporation SI4963BDY-T1-E3 2,500 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.8377
    		Buy Now

    Rochester Electronics LLC SI4963DY

    MOSFET 2P-CH 20V 6.2A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4963DY Bulk 437
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.69
    • 10000 $0.69
    		Buy Now

    Vishay Siliconix SI4963BDY-T1-GE3

    MOSFET 2P-CH 20V 4.9A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4963BDY-T1-GE3 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.6875
    		Buy Now

    Vishay Intertechnologies SI4963BDY-T1-GE3

    Transistor MOSFET Array Dual P-CH 20V 4.9A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4963BDY-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4963BDY-T1-GE3 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.6534
    		Buy Now
    Bristol Electronics SI4963BDY-T1-GE3 95
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    TTI SI4963BDY-T1-GE3 Reel 5,000 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.91
    		Buy Now

    Vishay Intertechnologies SI4963BDY-T1-E3

    Trans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical SI4963BDY-T1-E3 2,435 26
    • 1 -
    • 10 -
    • 100 $0.6013
    • 1000 $0.5875
    • 10000 $0.5862
    		Buy Now
    Newark SI4963BDY-T1-E3 Bulk 2,526 1
    • 1 $1.81
    • 10 $1.67
    • 100 $1.44
    • 1000 $1.38
    • 10000 $1.38
    		Buy Now
    Bristol Electronics SI4963BDY-T1-E3 2,480
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    TME SI4963BDY-T1-E3 1
    • 1 $1.26
    • 10 $1.16
    • 100 $0.87
    • 1000 $0.72
    • 10000 $0.72
    		Get Quote
    Chip1Stop SI4963BDY-T1-E3 Cut Tape 2,435
    • 1 $1.15
    • 10 $0.952
    • 100 $0.657
    • 1000 $0.481
    • 10000 $0.457
    		Buy Now
    Find more SI4963 price and stock on Findchips.com

    SI4963 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4963BDY Vishay Siliconix MOSFETs Original PDF
    Si4963BDY Vishay Telefunken Dual P-channel 2.5-v (g-s) Mosfet Original PDF
    Si4963BDY-T1 Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI4963BDY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 4.9A 8-SOIC Original PDF
    SI4963BDY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 4.9A 8SOIC Original PDF
    SI4963DY Fairchild Semiconductor Dual P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    Si4963DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si4963DY Vishay Intertechnology Dual P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI4963DY Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET Original PDF
    Si4963DY SPICE Device Model Vishay Dual P-Channel 2.5-V (G-S) MOSFET Original PDF

    SI4963 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4963 MOSFET

    Abstract: Si4963DY SI4963 marking 4963
    Text: Si4963DY Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


    Original     		PDF Si4963DY 4963 MOSFET SI4963 marking 4963

    3771

    Abstract: AN609 Si4963DY
    Text: Si4963DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4963DY AN609 23-Jan-06 3771

    Si4963DY

    Abstract: No abstract text available
    Text: Si4963DY Dual P-Channel, 2.5-V G–S Rated, MOSFET Product Summary VDS (V) –20 rDS(on) (W) ID (A) 0.033 @ VGS = –4.5 V "6.2 0.050 @ VGS = –2.5 V "5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET


    Original     		PDF Si4963DY S-51649--Rev. 28-Apr-97

    Untitled

    Abstract: No abstract text available
    Text: Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 6.5 0.050 at VGS = - 2.5 V - 5.2 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4963BDY 2002/95/EC Si4963BDY-T1-E3 Si4963BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4963BDY 13-Jan-04

    Untitled

    Abstract: No abstract text available
    Text: Si4963DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.033 @ VGS = −4.5 V −6.2 0.050 @ VGS = −2.5 V −5 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant S1 Available


    Original     		PDF Si4963DY Si4963DY-T1 Si4963DY-T1--E3 S-50695--Rev. 18-Apr-05

    Si4963BDY

    Abstract: No abstract text available
    Text: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application


    Original     		PDF Si4963BDY 20-May-04

    Untitled

    Abstract: No abstract text available
    Text: Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 6.5 0.050 at VGS = - 2.5 V - 5.2 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4963BDY 2002/95/EC Si4963BDY-T1-E3 Si4963BDY-T1-GE3 20electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: Si4963DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.033 @ VGS = –4.5 V "6.2 0.050 @ VGS = –2.5 V "5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2


    Original     		PDF Si4963DY S-51649--Rev. 28-Apr-97

    40235

    Abstract: Si4963BDY Si4963BDY-T1
    Text: Si4963BDY Vishay Siliconix New Product Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.032 @ VGS = −4.5 V −6.5 0.050 @ VGS = −2.5 V −5.2 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View Ordering Information: Si4963BDY—E3 (Lead Free)


    Original     		PDF Si4963BDY Si4963BDY--E3 Si4963BDY-T1--E3 S-40235--Rev. 16-Feb-04 40235 Si4963BDY-T1

    Si4963DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4963DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4963DY 22-Apr-02

    Si4963DY

    Abstract: No abstract text available
    Text: Si4963DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.033 @ VGS = –4.5 V –6.2 0.050 @ VGS = –2.5 V –5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET


    Original     		PDF Si4963DY 18-Jul-08

    Si4963BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4963BDY 18-Jul-08

    40235

    Abstract: Si4963BDY Si4963BDY-T1
    Text: Si4963BDY Vishay Siliconix New Product Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.032 @ VGS = −4.5 V −6.5 0.050 @ VGS = −2.5 V −5.2 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View Ordering Information: Si4963BDY—E3 (Lead Free)


    Original     		PDF Si4963BDY Si4963BDY--E3 Si4963BDY-T1--E3 08-Apr-05 40235 Si4963BDY-T1

    Si4963BDY

    Abstract: Si4963BDY-T1-E3 Si4963BDY-T1-GE3 SI4963
    Text: Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 6.5 0.050 at VGS = - 2.5 V - 5.2 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4963BDY 2002/95/EC Si4963BDY-T1-E3 Si4963BDY-T1-GE3 11-Mar-11 SI4963

    Si4963DY-T1

    Abstract: Si4963DY
    Text: Si4963DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.033 @ VGS = −4.5 V −6.2 0.050 @ VGS = −2.5 V −5 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant S1 Available


    Original     		PDF Si4963DY Si4963DY-T1 Si4963DY-T1--E3 18-Jul-08

    Si4963BDY

    Abstract: Si4963BDY-T1-E3 Si4963BDY-T1-GE3
    Text: Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 6.5 0.050 at VGS = - 2.5 V - 5.2 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4963BDY 2002/95/EC Si4963BDY-T1-E3 Si4963BDY-T1-GE3 18-Jul-08

    Si4963DY

    Abstract: No abstract text available
    Text: Si4963DY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.033 @ VGS = –4.5 V –6.2 0.050 @ VGS = –2.5 V –5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET


    Original     		PDF Si4963DY S-20036--Rev. 04-Mar-02

    Untitled

    Abstract: No abstract text available
    Text: Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 6.5 0.050 at VGS = - 2.5 V - 5.2 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/96/EC


    Original     		PDF Si4963BDY 2002/96/EC Si4963BDY-T1-E3 Si4963BDY-T1-GE3 20llectual 18-Jul-08

    Si4963BDY

    Abstract: mosfet Vds 30 Vgs 25
    Text: SPICE Device Model Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4963BDY S-60245Rev. 20-Feb-06 mosfet Vds 30 Vgs 25

    Si4963DY

    Abstract: No abstract text available
    Text: Si4963DY Vishay Siliconix Dual P-Channel 2.5-V G–S MOSFET PRODUCT SUMMARY VDS (V) –20 RDS(ON) (W) ID (A) 0.033 @ VGS = –4.5 V "6.2 0.050 @ VGS = –2.5 V "5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2


    Original     		PDF Si4963DY S-51649--Rev. 28-Apr-97

    Si4963BDY

    Abstract: Si4963BDY-T1-E3 Si4963DY-T1 SI4963DY Si4963DY-T1-E3
    Text: Specification Comparison Vishay Siliconix Si4963BDY vs. Si4963DY Description: P-Channel, 2.5 V G-S MOSFET Package: SO-8 Pin Out: Identical Part Number Replacements: Si4963BDY-T1-E3 Replaces Si4963DY-T1-E3 Si4963BDY-T1-E3 Replaces Si4963DY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si4963BDY Si4963DY Si4963BDY-T1-E3 Si4963DY-T1-E3 Si4963DY-T1 08-Nov-06

    Si4963DY

    Abstract: SI4963
    Text: Si4963DY Dual P-Channel 2.5-V G–S Rated MOSFET Product Summary VDS (V) –20 rDS(on) (W) ID (A) 0.033 @ VGS = –4.5 V "6.2 0.050 @ VGS = –2.5 V "5 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET


    Original     		PDF Si4963DY S-51649--Rev. 28-Apr-97 SI4963

    T0252AA

    Abstract: T0263 IRF7205 BSS83 IRFR5305 T0-220AB IRF7204 IRF7304 SI4465DY SI4963DY
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4465D Y SI4965D Y IR F7204 IR F7304 SI4963D Y SI9430D Y SI9435D Y SI9933A D Y SI9953D Y IR F7205 IR F7406 IR F7416 S I4431A D Y


    OCR Scan     		PDF SI4465DY SI4965DY IRF7204 IRF7304 SI4963DY SI9430DY SI9435DY SI9933ADY SI9953DY IRF7205 T0252AA T0263 BSS83 IRFR5305 T0-220AB