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Vishay Siliconix SI4936ADY-T1-E3 MOSFET 2N-CH 30V 4.4A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4936ADY-T1-E3	Digi-Reel	15,033		1	1 $2.72 10 $1.755 100 $2.72 1000 $0.8954 10000 $0.8954	Buy Now
	SI4936ADY-T1-E3	Cut Tape	15,033		1	1 $2.72 10 $1.755 100 $2.72 1000 $0.8954 10000 $0.8954	Buy Now
	SI4936ADY-T1-E3	Reel	12,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.8	Buy Now
RS	SI4936ADY-T1-E3	Bulk	403		1	1 $1.53 10 $1.45 100 $1.3 1000 $1.3 10000 $1.3	Buy Now
Vishay Siliconix SI4948BEY-T1-E3 MOSFET 2P-CH 60V 2.4A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4948BEY-T1-E3	Cut Tape	13,451		1	1 $1.86 10 $1.184 100 $1.86 1000 $0.57705 10000 $0.57705	Buy Now
	SI4948BEY-T1-E3	Digi-Reel	13,451		1	1 $1.86 10 $1.184 100 $1.86 1000 $0.57705 10000 $0.57705	Buy Now
	SI4948BEY-T1-E3	Reel	12,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.51927	Buy Now
RS	SI4948BEY-T1-E3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $1.22	Get Quote
New Advantage Corporation	SI4948BEY-T1-E3		2,500		1	1 - 10 - 100 - 1000 - 10000 $0.4675	Buy Now
Vishay Siliconix SI4925DDY-T1-GE3 MOSFET 2P-CH 30V 8A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4925DDY-T1-GE3	Reel	7,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.40656	Buy Now
RS	SI4925DDY-T1-GE3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $0.91	Get Quote
New Advantage Corporation	SI4925DDY-T1-GE3		97,500		1	1 - 10 - 100 - 1000 - 10000 $0.3631	Buy Now
Vishay Siliconix SI4943CDY-T1-GE3 MOSFET 2P-CH 20V 8A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4943CDY-T1-GE3	Digi-Reel	3,837		1	1 $2.43 10 $1.564 100 $2.43 1000 $0.78742 10000 $0.78742	Buy Now
	SI4943CDY-T1-GE3	Cut Tape	3,837		1	1 $2.43 10 $1.564 100 $2.43 1000 $0.78742 10000 $0.78742	Buy Now
	SI4943CDY-T1-GE3	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.6875	Buy Now
Vishay Siliconix SI4925BDY-T1-E3 MOSFET 2P-CH 30V 5.3A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4925BDY-T1-E3	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.56618	Buy Now
RS	SI4925BDY-T1-E3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $1.73	Get Quote
Velocity Electronics	SI4925BDY-T1-E3		368			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SI49 Datasheets (256)

Part	Manufacturer	Description	Datasheet Type	PDF
SI4900DY	Vishay	N-Channel 60-V (D-S) MOSFET	Original	PDF
SI4900DY-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 60V 5.3A 8-SOIC	Original	PDF
SI4900DY-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 60V 5.3A 8-SOIC	Original	PDF
Si4902DY	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
SI4904DY-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 40V 8A 8-SOIC	Original	PDF
SI4904DY-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 40V 8A 8-SOIC	Original	PDF
SI4906DY-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 40V 6.6A 8-SOIC	Original	PDF
SI4906DY-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 40V 6.6A 8-SOIC	Original	PDF
SI4908DY	Vishay Siliconix	Dual N-Channel 40-V (D-S) MOSFET	Original	PDF
SI4908DY-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 40V 5A 8-SOIC	Original	PDF
SI4908DY-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 40V 5A 8-SOIC	Original	PDF
SI4909DY-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 40V 8A 8SO	Original	PDF
SI4910DY	Vaishali Semiconductor	N-Channel 40-V (D-S) MOSFET	Original	PDF
SI4910DY-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 40V 7.6A 8-SOIC	Original	PDF

SI4910DY-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 40V 7.6A 8-SOIC	Original	PDF
SI4911DY	Vishay Siliconix	MOSFETs	Original	PDF
SI4911DY	Vishay Telefunken	Dual P-channel 20-v (d-s) Mosfet	Original	PDF
Si4911DY SPICE Device Model	Vishay	Dual P-Channel 20-V (D-S) MOSFET	Original	PDF
SI4913DY	Vishay Siliconix	MOSFETs	Original	PDF
SI4913DY	Vishay Telefunken	Dual P-Channel 20-V (D-S) MOSFET	Original	PDF

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SI49 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
*4947ad Abstract: No abstract text available Text: Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.080 at VGS = - 10 V - 3.9 0.135 at VGS = - 4.5 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	PDF	Si4947ADY 2002/95/EC Si4947ADY-T1-E3 Si4947ADY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 *4947ad
si4916 Abstract: No abstract text available Text: Si4916DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V	Original	PDF	Si4916DY Si4916DY-T1-E3 Si4916DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4916
Untitled Abstract: No abstract text available Text: Si4953ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.053 at VGS = - 10 V - 4.9 0.090 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	PDF	Si4953ADY 2002/95/EC Si4953ADY-T1-E3 Si4953ADY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Si4922BDY Abstract: SI4922BDY-T1-E3 Text: New Product Si4922BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a, e VDS (V) rDS(on) (Ω) 0.016 at VGS = 10 V 8 30 0.018 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 8 • TrenchFET Power MOSFET • 100 % Rg and UIS tested	Original	PDF	Si4922BDY Si4922BDY-T1-E3 08-Apr-05
Si4980DY Abstract: No abstract text available Text: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.075 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC	Original	PDF	Si4980DY 2002/95/EC Si4980DY-T1-E3 Si4980DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Si4948EY Abstract: No abstract text available Text: Si4948EY Vishay Siliconix Dual P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.120 at VGS = - 10 V ± 3.1 0.150 at VGS = - 4.5 V ± 2.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	PDF	Si4948EY 2002/95/EC Si4948EY-T1-E3 Si4948EY-T1-GE3 18-Jul-08
4963 MOSFET Abstract: Si4963DY SI4963 marking 4963 Text: Si4963DY Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate	Original	PDF	Si4963DY 4963 MOSFET SI4963 marking 4963
Untitled Abstract: No abstract text available Text: Si4936DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching	Original	PDF	Si4936DY
Untitled Abstract: No abstract text available Text: Si4953DY Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching	Original	PDF	Si4953DY
Untitled Abstract: No abstract text available Text: January 2001 Si4920DY Dual N-Channel, Logic Level, PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state	Original	PDF	Si4920DY OT-23
si4914b Abstract: si4914 Si4914BDY Text: SPICE Device Model Si4914BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si4914BDY 18-Jul-08 si4914b si4914
Untitled Abstract: No abstract text available Text: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.023 at VGS = - 4.5 V - 7.5 - 12 0.030 at VGS = - 2.5 V - 6.7 0.045 at VGS = - 1.8 V - 5.4 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si4967DY 2002/95/EC Si4967DY-T1-E3 Si4967DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Si4926DY Abstract: No abstract text available Text: Si4926DY New Product Vishay Siliconix Asymmetrical Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.0125 @ VGS = 10 V 10.5 0.017 @ VGS = 4.5 V 9.0 D1 D2 D2 D2	Original	PDF	Si4926DY S-00238--Rev. 21-Feb-00
MAR 732 Abstract: Si4900DY S-50392 Text: SPICE Device Model Si4900DY Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4900DY S-50392Rev. 14-Mar-05 MAR 732 S-50392

Si4971DY Abstract: Si4971DY-T1 Text: Si4971DY New Product Vishay Siliconix Dual P-Channel 25-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.026 @ VGS = - 10 V - 7.2 0.033 @ VGS = - 6 V - 6.4 D TrenchFETr Power MOSFET D 25-V VGS Provides Extra Head Room for Safe Operation	Original	PDF	Si4971DY Si4971DY-T1 S-03598--Rev. 31-Mar-03
Si4906DY-T1-E3 Abstract: si4906 SI4906DY Text: Si4906DY Vishay Siliconix New Product Dual N-Channel 40-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 40 FEATURES rDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS tested 6.6	Original	PDF	Si4906DY Si4906DY-T1-E3 08-Apr-05 si4906
74319 Abstract: 0947 AN609 Si4908DY 72483 Text: Si4908DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si4908DY AN609 12-Jun-07 74319 0947 72483
Si4973DY Abstract: Si4973DY-T1 Text: Si4973DY New Product Vishay Siliconix Dual P-Channel 25-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.023 @ VGS = - 10 V - 7.6 0.029 @ VGS = - 6 V - 6.8 D TrenchFETr Power MOSFET D 25-V VGS Provides Extra Head Room for Safe Operation	Original	PDF	Si4973DY Si4973DY-T1 S-03599--Rev. 31-Mar-03
Si4940DY Abstract: No abstract text available Text: Si4940DY New Product Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.036 @ VGS = 10 V 5.7 0.059 @ VGS = 4.5 V 4.4 D TrenchFETr Power MOSFET APPLICATIONS D Automotive Airbags D1 D2 SO-8 S1 1 8 D1 G1	Original	PDF	Si4940DY S-04277--Rev. 16-Jul-01
74856 Abstract: Si4922BDY Text: SPICE Device Model Si4922BDY Vishay Siliconix Dual N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4922BDY S-70711Rev. 23-Apr-07 74856
Si4936BDY Abstract: No abstract text available Text: SPICE Device Model Si4936BDY Vishay Siliconix Dual N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4936BDY S-71048Rev. 21-May-07
Si4936DY Abstract: No abstract text available Text: Si4936DY Siliconix Dual NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.037 @ VGS = 10 V "5.8 0.055 @ VGS = 4.5 V "4.7 D1 D1 D2 D2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 NĆChannel MOSFET S2 NĆChannel MOSFET	Original	PDF	Si4936DY S42148Rev.
Untitled Abstract: No abstract text available Text: New Product Si4941EDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.021 at VGS = - 10 V - 10a 0.031 at VGS = - 4.5 V - 10a • TrenchFET Power MOSFET • ESD Protection: 2500 V Qg (Typ) RoHS	Original	PDF	Si4941EDY Si4941EDY-T1-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si4936CDY Si4936CDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

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Vishay Siliconix SI4936ADY-T1-E3

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Vishay Siliconix SI4925BDY-T1-E3

SI49 Datasheets (256)

SI49 Datasheets Context Search

*4947ad

si4916

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Si4922BDY

Si4980DY

Si4948EY

4963 MOSFET

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si4914b

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Si4926DY

MAR 732

Si4971DY

Si4906DY-T1-E3

74319

Si4973DY

Si4940DY

74856

Si4936BDY

Si4936DY

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