SI4803
Abstract: Si4803DY
Text: Si4803DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio
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Si4803DY
Si4803DY-T1-E3
Si4803DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SI4803
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Si4803DY
Abstract: No abstract text available
Text: SPICE Device Model Si4803DY Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4803DY
18-Jul-08
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Si4803DY
Abstract: SI4803 Si4803DY-T1-E3
Text: New Product Si4803DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) - 20 ID (A) 0.065 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio Qg (Typ) 4.5 nC
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Si4803DY
Si4803DY-T1-E3
08-Apr-05
SI4803
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Si4803DY
Abstract: No abstract text available
Text: Si4803DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio
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Si4803DY
Si4803DY-T1-E3
Si4803DY-T1-GE3
11-Mar-11
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Si4803DY
Abstract: Si4803DY-T1-E3 Si4803DY-T1-GE3
Text: Si4803DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio
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Si4803DY
Si4803DY-T1-E3
Si4803DY-T1-GE3
18-Jul-08
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SI4803
Abstract: AN609 Si4803DY
Text: Si4803DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4803DY
AN609
19-Jul-07
SI4803
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Si4803DY
Abstract: No abstract text available
Text: New Product Si4803DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) - 20 ID (A) 0.065 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio Qg (Typ) 4.5 nC
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Original
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Si4803DY
Si4803DY-T1-E3
18-Jul-08
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SI4803
Abstract: Si4803DY
Text: Si4803DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio
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Original
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Si4803DY
Si4803DY-T1-E3
Si4803DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SI4803
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BS250KL
Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no
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SC-75
SC-75A
SC-89
BS250KL
tsop6 marking 345
SUD50P08
SI3437
SUD19P06-60L
MOSFET SUB75P03
tsop6 marking 443
Si5947DU
Si1471DH
SI1073X
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Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs
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Diod92
VMN-SG2127-0911
Diode SOT-23 marking 15d
SI4210
si4812b
SI-4102
SI7149DP
SiM400
si4932
si7135
SiB914
SI4477
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