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Vishay Siliconix SI4398DY-T1-E3 MOSFET N-CH 20V 19A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4398DY-T1-E3	Digi-Reel			1	1 $4.42 10 $4.42 100 $4.42 1000 $4.42 10000 $4.42	Buy Now
	SI4398DY-T1-E3	Cut Tape			1	1 $4.42 10 $4.42 100 $4.42 1000 $4.42 10000 $4.42	Buy Now
	SI4398DY-T1-E3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $1.55	Buy Now
Vishay Siliconix SI4398DY-T1-GE3 MOSFET N-CH 20V 19A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4398DY-T1-GE3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $1.55	Buy Now
Vishay Intertechnologies SI4398DY-E3 Trans MOSFET N-CH 20V 19A 8-Pin SOIC N - Rail/Tube (Alt: SI4398DY-E3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI4398DY-E3	Tube			100	1 - 10 - 100 $1.9125 1000 $1.79928 10000 $1.79928	Buy Now

SI4398DY Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI4398DY-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 19A 8-SOIC		Original	PDF
SI4398DY-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 19A 8-SOIC		Original	PDF

SI4398DY Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Si4398DY Abstract: Si4398DY-T1-E3 Text: New Product Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.0028 at VGS = 10 V 25 0.0040 at VGS = 4.5 V 22 • Extremely Low Qgd WFET Technology for Switching Losses • Ultra-Low On-Resistance	Original	PDF	Si4398DY Si4398DY-T1-E3 08-Apr-05
Untitled Abstract: No abstract text available Text: Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0028 at VGS = 10 V 25 0.0040 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses	Original	PDF	Si4398DY 2002/95/EC Si4398DY-T1-E3 Si4398DY-T1-GE3 11-Mar-11
C 4977 Abstract: AN609 Si4398DY Text: Si4398DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si4398DY AN609 26-Sep-07 C 4977
Untitled Abstract: No abstract text available Text: SPICE Device Model Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4398DY S-72400ï 26-Nov-07
70302 Abstract: S70302 si4398 Text: New Product Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.0028 at VGS = 10 V 25 0.0040 at VGS = 4.5 V 22 • Extremely Low Qgd WFET Technology for Switching Losses • Ultra-Low On-Resistance	Original	PDF	Si4398DY Si4398DY-T1-E3 18-Jul-08 70302 S70302 si4398
Untitled Abstract: No abstract text available Text: Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0028 at VGS = 10 V 25 0.0040 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Available • Extremely Low Qgd WFET Technology for	Original	PDF	Si4398DY Si4398DY-T1-E3 Si4398DY-T1-GE3 11-Mar-11
Si4398DY Abstract: No abstract text available Text: SPICE Device Model Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4398DY 18-Jul-08
Si4398DY Abstract: No abstract text available Text: SPICE Device Model Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4398DY S-51095Rev. 13-Jun-05
Untitled Abstract: No abstract text available Text: Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0028 at VGS = 10 V 25 0.0040 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses	Original	PDF	Si4398DY 2002/95/EC Si4398DY-T1-E3 Si4398DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Si4398DY Abstract: Si4398DY-T1-E3 Si4398DY-T1-GE3 Text: Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0028 at VGS = 10 V 25 0.0040 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Available • Extremely Low Qgd WFET Technology for	Original	PDF	Si4398DY Si4398DY-T1-E3 Si4398DY-T1-GE3 18-Jul-08
Untitled Abstract: No abstract text available Text: Si4398DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0028 at VGS = 10 V 25 0.0040 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses	Original	PDF	Si4398DY 2002/95/EC Si4398DY-T1-E3 Si4398DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
BS250KL-TR1-E3 Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3 Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8	Original	PDF	SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Power MOSFET Abstract: mosfet switch Schottky Diode 40V 2A schottky diode 30v MOSFET Text: POL Power Table of Contents BOOTSTRAP, Diodes. 3 CONTROLLERS, Current Sense Resistors. 4	Original	PDF	Si4642DY SiE726DF 1-1500uF 47-680uF Power MOSFET mosfet switch Schottky Diode 40V 2A schottky diode 30v MOSFET
bridge rectifier 24V AC to 24v dc Abstract: 1N5408 smd diodes GSIB1560 Text: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4	Original	PDF	250ns; DO-204AL DO-41) DO-220AA V-540V; V-440V bridge rectifier 24V AC to 24v dc 1N5408 smd diodes GSIB1560

gs 069 Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04 Text: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no	Original	PDF	SC-75 SC-75A SC-89 gs 069 PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04