SI3850DV SPICE DEVICE MODEL Search Results

SI3850DV SPICE DEVICE MODEL Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TPD4164F		Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31
TPD4207F		Toshiba Electronic Devices & Storage Corporation	Intelligent power device 600V (High voltage PWM DC brushless motor driver)
TPD4204F		Toshiba Electronic Devices & Storage Corporation	Intelligent power device 600V (High voltage PWM DC brushless motor driver)
TPD4164K		Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30
TPD4163K		Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30

SI3850DV SPICE DEVICE MODEL Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
Si3850DV SPICE Device Model		Vishay	Complementary MOSFET Half-Bridge (N- and P-Channel)		Original	PDF

SI3850DV SPICE DEVICE MODEL Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Si3850DV Abstract: Si3850DV SPICE Device Model Text: SPICE Device Model Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si3850DV 17-Apr-01 Si3850DV SPICE Device Model	PDF
Si3850DV Abstract: No abstract text available Text: SPICE Device Model Si3850DV Complementary MOSFET Half-Bridge N- and P- Channel Characteristics • N- and P- Channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range	Original	Si3850DV	PDF
50132 Abstract: No abstract text available Text: Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.500 @ VGS = 4.5 V 1.2 0.750 @ VGS = 3.0 V 1.0 1.00 @ VGS = −4.5 V −0.85 1.30 @ VGS = −3.0 V	Original	Si3850DV Si3850DV-T1 Si3850DV-T1--E3 08-Apr-05 50132	PDF
Untitled Abstract: No abstract text available Text: Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.500 @ VGS = 4.5 V 1.2 0.750 @ VGS = 3.0 V 1.0 1.00 @ VGS = −4.5 V −0.85 1.30 @ VGS = −3.0 V	Original	Si3850DV Si3850DV-T1 Si3850DV-T1--E3 08-Apr-05	PDF
Si3850DV Abstract: Si3850DV-T1 S-50132 Text: Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.500 @ VGS = 4.5 V 1.2 0.750 @ VGS = 3.0 V 1.0 1.00 @ VGS = −4.5 V −0.85 1.30 @ VGS = −3.0 V	Original	Si3850DV Si3850DV-T1 Si3850DV-T1--E3 S-50132--Rev. 24-Jan-05 S-50132	PDF
Si3850DV-T1 Abstract: Si3850DV s2dg1 Text: Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.500 @ VGS = 4.5 V 1.2 0.750 @ VGS = 3.0 V 1.0 1.00 @ VGS = −4.5 V −0.85 1.30 @ VGS = −3.0 V	Original	Si3850DV Si3850DV-T1 Si3850DV-T1--E3 18-Jul-08 s2dg1	PDF
sud50n025-06p Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud50n025-09p SI2301ADS SI4732CY si9110 Text: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m	Original	VSA-SG0019-0310 sud50n025-06p SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud50n025-09p SI2301ADS SI4732CY si9110	PDF