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    SI3477DV Search Results

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    SI3477DV Price and Stock

    Vishay Siliconix SI3477DV-T1-GE3

    MOSFET P-CH 12V 8A 6TSOP
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    DigiKey SI3477DV-T1-GE3 Cut Tape 19,526 1
    • 1 $1.13
    • 10 $0.707
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    SI3477DV-T1-GE3 Digi-Reel 19,526 1
    • 1 $1.13
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    SI3477DV-T1-GE3 Reel 18,000 3,000
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    RS SI3477DV-T1-GE3 Bulk 20
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    Vishay Intertechnologies SI3477DV-T1-GE3

    P-CHANNEL 12-V (D-S) MOSFET - Tape and Reel (Alt: SI3477DV-T1-GE3)
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    Avnet Americas SI3477DV-T1-GE3 Reel 18 Weeks 3,000
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    Mouser Electronics SI3477DV-T1-GE3 28,288
    • 1 $0.51
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    Verical SI3477DV-T1-GE3 6,000 3,000
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    Arrow Electronics SI3477DV-T1-GE3 6,000 18 Weeks 3,000
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    Newark SI3477DV-T1-GE3 Cut Tape 4,730 1
    • 1 $0.59
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    SI3477DV-T1-GE3 Reel 3,000
    • 1 $0.335
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    TTI SI3477DV-T1-GE3 Reel 3,000 3,000
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    EBV Elektronik SI3477DV-T1-GE3 22 Weeks 3,000
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    Others SI3477DVT1GE3

    AVAILABLE EU
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    ComSIT USA SI3477DVT1GE3 3,000
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    SI3477DV Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI3477DV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 8A 6-TSOP Original PDF

    SI3477DV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3477DV Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A)a 0.0175 at VGS = - 4.5 V -8 0.023 at VGS = - 2.5 V -8 0.033 at VGS = - 1.8 V -8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3477DV 2002/95/EC Si3477DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3477DV Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A)a 0.0175 at VGS = - 4.5 V -8 0.023 at VGS = - 2.5 V -8 0.033 at VGS = - 1.8 V -8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3477DV 2002/95/EC Si3477DV-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3477DV Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A)a 0.0175 at VGS = - 4.5 V -8 0.023 at VGS = - 2.5 V -8 0.033 at VGS = - 1.8 V -8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3477DV 2002/95/EC Si3477DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3477DV Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A)a 0.0175 at VGS = - 4.5 V -8 0.023 at VGS = - 2.5 V -8 0.033 at VGS = - 1.8 V -8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3477DV 2002/95/EC Si3477DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si3477DV

    Abstract: si3477
    Text: SPICE Device Model Si3477DV Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si3477DV 18-Jul-08 si3477

    28-5940

    Abstract: 71004
    Text: Si3477DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si3477DV AN609, 6936u 3562m 9719m 9148u 3406m 5349m 08-Jun-10 28-5940 71004

    si3477

    Abstract: S1015
    Text: New Product Si3477DV Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A)a 0.0175 at VGS = - 4.5 V -8 0.023 at VGS = - 2.5 V -8 0.033 at VGS = - 1.8 V -8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3477DV 2002/95/EC Si3477DV-T1-GE3 11-Mar-11 si3477 S1015

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si3477DV www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si3477DV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si7141

    Abstract: SiA447DJ SI7615A
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on


    Original     		PDF SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836