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Skyworks Solutions Inc SI3403-A-GM IC POE CNTRL TO 17W 20QFN
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DigiKey	SI3403-A-GM	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI3403DV-T1-E3 MOSFETs 20V 5.0A 3.2W
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Mouser Electronics	SI3403DV-T1-E3					1 - 10 - 100 - 1000 - 10000 $0.313	Get Quote
Vishay Intertechnologies SI3403DV-T1-GE3 MOSFETs 20V 5.0A 3.2W 70mohm @ 4.5V
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Mouser Electronics	SI3403DV-T1-GE3					1 - 10 - 100 - 1000 - 10000 $0.313	Get Quote

SI3403 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Si3403DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio	Original	PDF	Si3403DV 2002/95/EC Si3403DV-T1-E3 Si3403DV-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: Si3403DV Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY - 20 FEATURES rDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 VDS (V) Qg (Typ) • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio 4.5 nC	Original	PDF	Si3403DV Si3403DV-T1-E3 08-Apr-05
74404 Abstract: Si3403DV-T1-E3 SI3403DV Text: Si3403DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio	Original	PDF	Si3403DV 2002/95/EC Si3403DV-T1-E3 Si3403DV-T1-GE3 18-Jul-08 74404
marking code AE Abstract: No abstract text available Text: Si3403DV Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY - 20 FEATURES rDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 VDS (V) Qg (Typ) • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio 4.5 nC	Original	PDF	Si3403DV Si3403DV-T1-E3 18-Jul-08 marking code AE
74657 Abstract: AN609 613812 Text: Si3403DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si3403DV AN609 04-May-07 74657 613812
Untitled Abstract: No abstract text available Text: Si3403DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio	Original	PDF	Si3403DV 2002/95/EC Si3403DV-T1-E3 Si3403DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
74404 Abstract: si3403 Text: Si3403DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio	Original	PDF	Si3403DV 2002/95/EC Si3403DV-T1-E3 Si3403DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 74404 si3403