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    SI14 Search Results

    SI14 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    TSI148-133CLY Renesas Electronics Corporation VME to PCI-X Bridge Visit Renesas Electronics Corporation
    TSI148-133ILY Renesas Electronics Corporation VME to PCI-X Bridge Visit Renesas Electronics Corporation
    TSI148-133CL Renesas Electronics Corporation VME to PCI-X Bridge Visit Renesas Electronics Corporation
    TSI148-133IL Renesas Electronics Corporation VME to PCI-X Bridge Visit Renesas Electronics Corporation
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    SI14 Price and Stock

    Vishay Siliconix SI1469DH-T1-GE3

    MOSFET P-CH 20V 2.7A SC70-6
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    DigiKey SI1469DH-T1-GE3 Digi-Reel 14,220 1
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    SI1469DH-T1-GE3 Reel 12,000 3,000
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    Vishay Siliconix SI1443EDH-T1-BE3

    MOSFET P-CH 30V 4A/4A SC70-6
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    DigiKey SI1443EDH-T1-BE3 Digi-Reel 6,220 1
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    SI1443EDH-T1-BE3 Cut Tape 6,220 1
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    SI1443EDH-T1-BE3 Reel 3,000 3,000
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    Vishay Siliconix SI1424EDH-T1-GE3

    MOSFET N-CH 20V 4A SOT-363
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    DigiKey SI1424EDH-T1-GE3 Digi-Reel 4,024 1
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    SI1424EDH-T1-GE3 Reel 3,000 3,000
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    Vishay Siliconix SI1403BDL-T1-E3

    MOSFET P-CH 20V 1.4A SC70-6
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    Vishay Siliconix SI1427EDH-T1-GE3

    MOSFET P-CH 20V 2A SC70-6
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    DigiKey SI1427EDH-T1-GE3 Reel 3,000 3,000
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    SI14 Datasheets (128)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si1400DL Vishay Intertechnology N-Channel 20-V (D-S) MOSFET Original PDF
    SI1400DL Vishay Siliconix N-Channel 20-V (D-S) MOSFET Original PDF
    Si1400DL SPICE Device Model Vishay N-Channel 20-V (D-S) MOSFET Original PDF
    SI1400DL-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 1.6A SC70-6 Original PDF
    SI1400DL-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 1.6A SC-70-6 Original PDF
    SI1401EDH-T1-BE3 Vishay Siliconix MOSFET P-CH 12V 4A/4A SC70-6 Original PDF
    SI1401EDH-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 4A SC-70-6 Original PDF
    SI1402DH Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    SI1402DH-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 2.7A SOT363 Original PDF
    SI1402DH-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 2.7A SOT363 Original PDF
    SI1403BDL-T1-BE3 Vishay Siliconix MOSFET P-CH 20V 1.4A SC70-6 Original PDF
    SI1403BDL-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 1.4A SC70-6 Original PDF
    SI1403BDL-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 20V 1.5A SC70-6 Original PDF
    SI1403CDL-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2.1A SC-70-6 Original PDF
    Si1403DL Vishay Intertechnology P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI1403DL Vishay Siliconix MOSFETs Original PDF
    SI1403DL-DS Vishay Telefunken DS-Spice Model for Si1403DL Original PDF
    Si1403DL SPICE Device Model Vishay P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI1403DL-T1 Vishay Intertechnology P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI1404BDH-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 1.9A SOT363 Original PDF
    ...

    SI14 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si1416EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si1416EDH AN609, 9774u 9125m 8816m 6885u 1252u 3841m 9719u 28-Mar-11

    SI1443EDH

    Abstract: marking code bt S1209
    Text: New Product Si1443EDH Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 4a 0.062 at VGS = - 4.5 V - 4a 0.085 at VGS = - 2.5 V - 3.4 Qg (Typ.) 8.6 nC • • • • TrenchFET Power MOSFET


    Original     		PDF Si1443EDH SC-70 Si1443EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking code bt S1209

    si1427

    Abstract: No abstract text available
    Text: Si1427EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si1427EDH AN609, 3515u 1736m 9349m 1636u 2141m 9215u 1951m si1427

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1428EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.045 at VGS = 10 V 4 30 0.049 at VGS = 4.5 V 4 0.060 at VGS = 2.5 V 4 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1428EDH 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si1405DL

    Abstract: No abstract text available
    Text: Si1405DL Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.125 at VGS = - 4.5 V ± 1.8 0.160 at VGS = - 2.5 V ± 1.6 0.210 at VGS = - 1.8 V ± 1.4 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1405DL 2002/95/EC OT-363 SC-70 Si1405DL-T1-E3 Si1405DL-T1-GE3 18-Jul-08

    Si1499DH

    Abstract: P-Channel mosfet sot-363 Si1499DH-T1-E3
    Text: Si1499DH Vishay Siliconix P-Channel 1.2 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)c 0.078 at VGS = - 4.5 V - 1.6 VDS (V) -8 0.095 at VGS = - 2.5 V - 1.6 0.115 at VGS = - 1.8 V - 1.6 0.153 at VGS = - 1.5 V - 1.6 0.424 at VGS = - 1.2 V - 1.6b


    Original     		PDF Si1499DH OT-363 SC-70 2002/95/EC 18-Jul-08 P-Channel mosfet sot-363 Si1499DH-T1-E3

    Si1411DH

    Abstract: si1411dh-t1-e3
    Text: Si1411DH Vishay Siliconix P-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A) 2.6 at VGS = - 10 V - 0.52 2.7 at VGS = - 6 V - 0.51 Qg (Typ.) 4.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETS


    Original     		PDF Si1411DH SC-70 2002/95/EC OT-363 SC-70 Si1411DH-T1-E3 Si1411DH-T1-GE3 18-Jul-08

    Si1426DH

    Abstract: SI1426DH-T1-E3
    Text: Si1426DH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.075 at VGS = 10 V 3.6 0.115 at VGS = 4.5 V 2.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Thermally Enhanced SC-70 Package


    Original     		PDF Si1426DH SC-70 2002/95/EC OT-363 SC-70 Si1426DH-T1-E3 Si1426DH-T1-GE3 18-Jul-08

    74468

    Abstract: Si1471DH Si1471DH-T1-E3 Si1471DH-T1-GE3 S10 BN 320 sot363 ON Marking DS SI1471DHT1E3
    Text: Si1471DH Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)c 0.100 at VGS = - 10 V - 2.7 - 30 0.120 at VGS = - 4.5 V - 2.7 0.175 at VGS = - 2.5 V - 2.7 Qg (Typ.) 6.5 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1471DH 2002/95/EC OT-363 SC-70 Si1471DH-T1-E3 Si1471DH-T1-GE3 18-Jul-08 74468 S10 BN 320 sot363 ON Marking DS SI1471DHT1E3

    0935 DIODE

    Abstract: Si1413EDH
    Text: Si1413EDH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.115 at VGS = - 4.5 V - 2.9 0.155 at VGS = - 2.5 V - 2.4 0.220 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1413EDH SC-70 2002/95/EC OT-363 SC-70 Si1413EDH-T1-E3 18-Jul-08 0935 DIODE

    Si1406DH

    Abstract: No abstract text available
    Text: Si1406DH New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.065 @ VGS = 4.5 V 3.9 0.075 @ VGS = 2.5 V 3.6 0.096 @ VGS = 1.8 V 3.2 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package


    Original     		PDF Si1406DH SC-70 OT-363 SC-70 S-04475--Rev. 13-Aug-01

    Si1410EDH

    Abstract: MARKING CODE AA
    Text: Si1410EDH Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.070 at VGS = 4.5 V 3.7 0.080 at VGS = 2.5 V 3.4 0.100 at VGS = 1.8 V 3.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		PDF Si1410EDH SC-70 2002/95/EC OT-363 SC-70 Si1410EDH-T1-E3 Si1410EDH-lectual 18-Jul-08 MARKING CODE AA

    Si1419DH

    Abstract: No abstract text available
    Text: Si1419DH New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 rDS(on) (W) ID (A) 5.0 @ VGS = −10 V −0.38 5.1 @ VGS = −6 V −0.37 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance


    Original     		PDF Si1419DH SC-70 OT-363 Si1419DH-T1--E3 08-Apr-05

    Qrr20

    Abstract: No abstract text available
    Text: Si1403BDL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.150 @ VGS = −4.5 V −1.5 0.175 @ VGS = −3.6 V −1.4 0.265 @ VGS = −2.5 V −1.2 D TrenchFETr Power MOSFET Qg (Typ) 2.9 SOT-363


    Original     		PDF Si1403BDL OT-363 SC-70 Si1403BDL-T1--E3 S-50137--Rev. 24-Jan-05 Qrr20

    TB-17

    Abstract: No abstract text available
    Text: New Product Si1405BDH Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A)c 0.112 at VGS = - 4.5 V - 1.6 0.160 at VGS = - 2.5 V - 1.6 0.210 at VGS = - 1.8 V - 1.6 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS


    Original     		PDF Si1405BDH OT-363 SC-70 Si1405BDH-T1-E3 08-Apr-05 TB-17

    74888

    Abstract: No abstract text available
    Text: SPICE Device Model Si1405BDH Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1405BDH S-71490Rev. 23-Jul-07 74888

    Si1499DH

    Abstract: Si1499DH-T1-E3
    Text: New Product Si1499DH Vishay Siliconix P-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)c 0.078 at VGS = - 4.5 V - 1.6 0.095 at VGS = - 2.5 V - 1.6 0.115 at VGS = - 1.8 V - 1.6 0.153 at VGS = - 1.5 V - 1.6 0.424 at VGS = - 1.2 V - 1.6b


    Original     		PDF Si1499DH OT-363 SC-70 18-Jul-08 Si1499DH-T1-E3

    Si1400DL

    Abstract: Si1400DL-T1-E3
    Text: New Product Si1400DL Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.150 at VGS = 4.5 V 1.7 0.235 at VGS = 2.5 V 1.3 • TrenchFET Power MOSFET: 2.5 V Rated Pb-free Available RoHS* COMPLIANT SOT-363


    Original     		PDF Si1400DL OT-363 SC-70 Si1400DL-T1 Si1400DL-T1-E3 18-Jul-08

    S-81216-Rev

    Abstract: Si1467DH Si1467DH-T1-E3
    Text: New Product Si1467DH Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)c 0.090 at VGS = - 4.5 V - 1.6 - 20 0.115 at VGS = - 2.5 V - 1.6 0.150 at VGS = - 1.8 V - 1.6 Qg (Typ.) 9.0 nC • TrenchFET Power MOSFET


    Original     		PDF Si1467DH OT-363 SC-70 Si1467DH-T1-E3 18-Jul-08 S-81216-Rev

    Si1417EDH

    Abstract: s0318
    Text: Si1417EDH New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.085 @ VGS = –4.5 V –3.3 APPLICATIONS


    Original     		PDF Si1417EDH SC-70 OT-363 SC-70 S-03187--Rev. 05-Mar-01 s0318

    marking AF sc70-6

    Abstract: No abstract text available
    Text: Si1404BDH New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a rDS(on) (W) 30 0.238 @ VGS = 4.5 V 1.9 0.380 @ VGS = 2.5 V 1.51 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) RoHS APPLICATIONS 1 1 nC 1.1 COMPLIANT


    Original     		PDF Si1404BDH SC-70 Si1404BDH-T1--E3 51453--Rev. marking AF sc70-6

    sc 1287

    Abstract: No abstract text available
    Text: New Product Si1422DH Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.026 at VGS = 4.5 V 4 0.030 at VGS = 2.5 V 4 0.036 at VGS = 1.8 V 4 VDS (V) 12 Qg (Typ.) 7.5 nC • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1422DH 2002/95/EC OT-363 SC-70 Si1422DH-T1-GE3 11-Mar-11 sc 1287

    sc 0645

    Abstract: No abstract text available
    Text: Si1405BDH Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)c 0.112 at VGS = - 4.5 V - 1.6 0.160 at VGS = - 2.5 V - 1.6 0.210 at VGS = - 1.8 V - 1.6 Qg (Typ.) 3.67 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1405BDH 2002/95/EC OT-363 SC-70 Si1405BDH-T1-E3 Si1405BDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. sc 0645

    Si1401

    Abstract: SI1401EDH-T1-GE3 si1401e
    Text: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1401EDH 2002/95/EC OT-363 SC-70 Si1401EDH-T1-GE3 18-Jul-08 Si1401 si1401e