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    SI 356/2 DIODE Search Results

    SI 356/2 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    SI 356/2 DIODE Datasheets Context Search

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    SEMIX302GAL12T4S

    Abstract: No abstract text available
    Text: SEMiX302GAL12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 463 A Tc = 80°C 356 A 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 356 A Tc = 80°C 266 A 900 A -40 . 175 °C Tc = 25°C 356


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    PDF SEMiX302GAL12T4s SEMIX302GAL12T4S

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GAL12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V


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    PDF SEMiX302GAL12E4s E63532

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    Abstract: No abstract text available
    Text: SEMiX302GAR12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 463 A Tc = 80°C 356 A 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 356 A Tc = 80°C 266 A 900 A -40 . 175 °C Tc = 25°C 356


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    PDF SEMiX302GAR12T4s

    SEMiX302GAL12E4s

    Abstract: No abstract text available
    Text: SEMiX302GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


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    PDF SEMiX302GAL12E4s E63532 SEMiX302GAL12E4s

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    Abstract: No abstract text available
    Text: SEMiX302GAR12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


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    PDF SEMiX302GAR12T4s E63532 TypEMiX302GAR12T4s

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GAR12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V


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    PDF SEMiX302GAR12E4s E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GAR12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V


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    PDF SEMiX302GAR12E4s SEMiX302GAR12E4s

    igbt

    Abstract: No abstract text available
    Text: SEMiX302GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GAL12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V


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    PDF SEMiX302GAL12E4s SEMiX302GAL12E4s igbt

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    Abstract: No abstract text available
    Text: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


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    PDF SEMiX302GAR12E4s E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


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    PDF SEMiX302GAL12E4s E63532 dEMiX302GAL12E4s

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C


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    PDF SEMiX302GAR12E4s E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GAL12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


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    PDF SEMiX302GAL12T4s

    igbt welding

    Abstract: SEMIX302GAR
    Text: SEMiX302GAR12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


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    PDF SEMiX302GAR12T4s E63532 igbt welding SEMIX302GAR

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C


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    PDF SEMiX302GAL12E4s E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GAL12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


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    PDF SEMiX302GAL12T4s E63532 TypEMiX302GAL12T4s

    CS3717A

    Abstract: CS3717AGNF16 MS-001 circuit diagram of stepper
    Text: CS3717A DE SI GN CS3717A 1A H-Bridge Stepper Motor Driver Description NE W The power section is a full H-bridge driver with four internal clamp diodes for current recirculation. An external connection to the lower emitters is available for the insertion of a sensing resistor. Two CS3717A’s


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    PDF CS3717A CS3717A MS-001 CS3717AGNF16 CS3717AGNF16 MS-001 circuit diagram of stepper

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 463 A Tc = 80°C 356 A 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 356 A Tc = 80°C 266 A 900 A -40 . 175 °C ICRM = 3xICnom VGES


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    PDF SEMiX302GB12T4s

    SEMiX302GB12E4s

    Abstract: No abstract text available
    Text: SEMiX302GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V


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    PDF SEMiX302GB12E4s E63532 SEMiX302GB12E4s

    SEMiX302GB12E4s

    Abstract: SEMIX302GB12
    Text: SEMiX302GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


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    PDF SEMiX302GB12E4s E63532 SEMiX302GB12E4s SEMIX302GB12

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


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    PDF SEMiX302GB12T4s E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V


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    PDF SEMiX302GB12E4s SEMiX302GB12E4s E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C


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    PDF SEMiX302GB12E4s E63532

    2050I

    Abstract: No abstract text available
    Text: n - n x V 'C X - Y Super Fast Recovery Diode Single Diode mn?â Surface Mount OUTLINE DIMENSIONS DF20L60U Package I STO-220 600V 20A •S M D •e y -rx • tr r 3 5 n s m •SRSÎÜ RATINGS Absolute Maximum Ratings a a Operating Junction Temperature Average Rectified Forward Current


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    PDF DF20L60U STO-220 DF20L60U 50HziE5£ J515-5 2050I

    SGSP256

    Abstract: SGSP356 SP156 sgsp254 sgsp354 SGSP154
    Text: S G S-THOMSON D7E D | ÏTSTSB? 0017630 b | / J 3 C ~ J r Î3 3 5 D 7 ^ 3 9 -0 7 SGSP154 /155 /156 SGSP254/255/258 SGSP354/355/356 ^-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHIN G APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field


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    PDF SGSP154 SGSP254/255/258 SGSP354/355/356 50V/400V SGSP254 SGSP354 OT-82 O-220 SGSP155 SGSP256 SGSP356 SP156