marking 105
Abstract: 2SB1123 FP105 2088a
Text: Ordering number:EN4656 FP105 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating
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EN4656
FP105
FP105
2SB1123
SB0505CP,
FP105]
marking 105
2088a
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en3962
Abstract: transistor en3962 FP103 2SB1121 SB07-03C
Text: Ordering number:EN3962 FP103 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating
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EN3962
FP103
FP103
2SB1121
SB07-03C,
FP103]
en3962
transistor en3962
SB07-03C
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FP102 equivalent
Abstract: 2SB1396 FP102 SB07-03C No39
Text: Ordering number:EN3961A FP102 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating
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EN3961A
FP102
FP102
2SB1396
SB07-03C,
FP102]
FP102 equivalent
SB07-03C
No39
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AX-8060
Abstract: 2SB1121 FP101 SB05-05CP
Text: Ordering number:EN3960 FP101 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating
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EN3960
FP101
FP101
2SB1121
SB05-05CP,
FP101]
AX-8060
SB05-05CP
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FP105
Abstract: marking 105 2SB1123 2088a
Text: Ordering number:EN4656 FP105 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating
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EN4656
FP105
FP105
2SB1123
SB0505CP,
FP105]
marking 105
2088a
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TA-0718
Abstract: 2088a FP107 2SB1396
Text: Ordering number:EN5413A FP107 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode in one package, facilitating highdensity mounting.
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EN5413A
FP107
FP107
2SB1396
SBS001.
FP107]
TA-0718
2088a
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2SB1396
Abstract: FP102 SB07-03C
Text: Ordering number:EN3961A FP102 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating
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EN3961A
FP102
FP102
2SB1396
SB07-03C,
FP102]
SB07-03C
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN3960 FP101 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating
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EN3960
FP101
FP101
2SB1121
SB05-05CP,
FP101]
500mA
100mA,
250mm2Ã
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SB01-05CP
Abstract: SHOTTKY DIODE
Text: Ordering number :EN1916A SB01-05CP Shottky Barrier Diode 50V, 100mA Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1148 [SB01-05CP] Features · Low forward voltage (VF max=0.55V).
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EN1916A
SB01-05CP
100mA
SB01-05CP]
SB01-05CP
SHOTTKY DIODE
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SB07-015C
Abstract: diode 15V
Text: Ordering number :EN4438A SB07-015C Shottky Barrier Diode 15V, 700mA Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1148A [SB07-015C] Features · Low forward voltage (VF max=0.55V).
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EN4438A
SB07-015C
700mA
SB07-015C]
SB07-015Capplied
SB07-015C
diode 15V
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SB005-09CP
Abstract: No abstract text available
Text: Ordering number :EN1921A SB005-09CP Shottky Barrier Diode 90V, 50mA Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters and choppers . unit:mm 1148 [SB005-09CP] Features · Low forward voltage (VF max=0.7V).
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EN1921A
SB005-09CP
SB005-09CP]
SB005-09CP
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RSX301LA-30
Abstract: shottky diode 56
Text: RSX301LA-30 Diodes Shottky barrier diode RSX301LA-30 !External dimensions Unit : mm !Application General rectification. CATHODE MARK 2.6±0.2 ROHM : EIAJ : − JEDEC : !Structure Silicon Epitaxial Planer 0.2±0.15 0.1 4.7±0.3 56 !Features 1) Small and Thin power mold type (PMDT).
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RSX301LA-30
200pF
100pF
RSX301LA-30
shottky diode 56
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RSX301LA-30
Abstract: No abstract text available
Text: RSX301LA-30 Diodes Shottky barrier diode RSX301LA-30 !External dimensions Unit : mm !Application General rectification. CATHODE MARK 2.6±0.2 ROHM : EIAJ : − JEDEC : !Structure Silicon Epitaxial Planer 0.2±0.15 0.1 4.7±0.3 56 !Features 1) Small and Thin power mold type (PMDT).
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RSX301LA-30
RSX301LA-30
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Untitled
Abstract: No abstract text available
Text: Ordering number :EN1928B SB002-15CP Shottky Barrier Diode 150V, 20mA Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters and choppers . unit:mm 1148A [SB002-15CP] Features · Low forward voltage (VF max=0.75V).
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EN1928B
SB002-15CP
SB002-15CP]
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en2995
Abstract: SB01W05C
Text: Ordering number :EN2995A SB01W05C Shottky Barrier Diode Twin Type • Cathode Common 50V, 100mA Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1169A [SB01W05C] Features · Low forward voltage (VF max=0.55V).
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EN2995A
SB01W05C
100mA
SB01W05C]
en2995
SB01W05C
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Untitled
Abstract: No abstract text available
Text: Data Sheet Shottky barrier diode RB050L-40 Applications General rectification Dimensions Unit : mm Land size figure (Unit : mm) 2.0 5 ① ② 0.1±0.02 0.1 4.2 PMDS 2.0±0.2 1.5±0.2 Construction Silicon epitaxial planar 5.0±0.3 3
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RB050L-40
OD-106
R1102A
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RB050L-40
Abstract: No abstract text available
Text: Data Sheet Shottky barrier diode RB050L-40 Dimensions Unit : mm Applications General rectification Land size figure (Unit : mm) 2.0 5 ① ② 0.1±0.02 0.1 4.2 PMDS 2.0±0.2 1.5±0.2 Construction Silicon epitaxial planar 5.0±0.3 3
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RB050L-40
OD-106
200pF
100pF
R1120A
RB050L-40
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Untitled
Abstract: No abstract text available
Text: RB050L-40 Data Sheet Shottky barrier diode RB050L-40 Dimensions Unit : mm Applications General rectification Land size figure (Unit : mm) 2.0 5 ① ② 0.1±0.02 0.1 4.2 PMDS 2.0±0.2 1.5±0.2 Construction Silicon epitaxial planar 5.0±0.3
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RB050L-40
OD-106
200pF
100pF
R1120A
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RB050L
Abstract: No abstract text available
Text: Data Sheet AEC-Q101 Qualified Shottky barrier diode RB050L-40TF Applications General rectification Land size figure Unit : mm Dimensions (Unit : mm) 2.0 5 ① ② 0.1±0.02 0.1 4.2 PMDS 2.0±0.2 1.5±0.2 Construction Silicon epitaxial planar
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AEC-Q101
RB050L-40TF
OD-106
R1102A
RB050L
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ELECTRONIC BALLAST 1 T5 LAMP SCHEMATIC
Abstract: electronic ballast for fluorescent lighting t5 simple circuit diagram of electronic choke EF25 TRANSFORMER electronic ballast for fluorescent lighting t8 transistor Electronic ballast t5 ELECTRONIC BALLAST 2 LAMP SCHEMATIC IEC60081 IEC-60929 t8 ballast circuits
Text: AN2982 Application note 1 x 54 W T5 fluorescent lamp ballast in wide input voltage range using the L6585DE - STEVAL-ILB005V2 Introduction This application note describes the STEVAL-ILB005V2 demonstration board equipped with the L6585DE lighting controller, STD7NM50N MOSFETs and an STTH1L06 Shottky diode
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AN2982
L6585DE
STEVAL-ILB005V2
STEVAL-ILB005V2
STD7NM50N
STTH1L06
ELECTRONIC BALLAST 1 T5 LAMP SCHEMATIC
electronic ballast for fluorescent lighting t5
simple circuit diagram of electronic choke
EF25 TRANSFORMER
electronic ballast for fluorescent lighting t8
transistor Electronic ballast t5
ELECTRONIC BALLAST 2 LAMP SCHEMATIC
IEC60081
IEC-60929
t8 ballast circuits
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20V P-Channel Power MOSFET 500A
Abstract: CMLM8205
Text: CMLM8205 MULTI DISCRETE MODULE SURFACE MOUNT P-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE SOT-563 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM8205 is a Multi Discrete Module™ consisting of a single P-Channel Enhancement-mode MOSFET and a
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CMLM8205
OT-563
CMLM8205
500mA,
200mA
200mA,
100mA
500mA
20V P-Channel Power MOSFET 500A
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CMLM8205
Abstract: mosfet low vgs
Text: Central CMLM8205 MULTI DISCRETE Semiconductor Corp. MODULE SURFACE MOUNT P-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE TM SOT-563 CASE TM DESCRIPTION: The Central Semiconductor CMLM8205 is a Multi Discrete Module™ consisting of a single P-Channel Enhancement-mode MOSFET and a Low
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CMLM8205
OT-563
CMLM8205
200mA
115mA
100mA
500mA
mosfet low vgs
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DIODE 158
Abstract: Diode Sensors 23443 6960B ifr 6920
Text: Counters & Power Meters 6910/20/30 RF Power Sensors A range of 17 power sensors available for use with 6200B series MTS, CPM, 6960B and 6970 power meters • Wide frequency coverage 30 kHz to 46 GHz • Power levels from: -70 dBm 100 pW to +44 dBm (25 W)
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6200B
6960B
DIODE 158
Diode Sensors
23443
ifr 6920
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power meter 6930
Abstract: 6914S DIODE 158 Sensor 6914 6960B 6914 APC-7 6934S power thermocouple
Text: Counters & Power Meters 6910/20/30 RF Power Sensors A range of 17 power sensors available for use with 6200B series MTS, CPM, 6960B and 6970 power meters High Measurement Accuracy • Wide frequency coverage 30 kHz to 46 GHz • Power levels from: -70 dBm 100 pW to
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6200B
6960B
power meter 6930
6914S
DIODE 158
Sensor 6914
6914
APC-7
6934S
power thermocouple
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