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    SGM20 Price and Stock

    Amphenol Positronic SGM20SDS4T0000

    D-SUB
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    DigiKey SGM20SDS4T0000 Tray 25 1
    • 1 $77.08
    • 10 $59.867
    • 100 $47.4153
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    Newark SGM20SDS4T0000 Bulk 3
    • 1 $151.63
    • 10 $134.95
    • 100 $115.36
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    Interstate Connecting Components SGM20SDS4T0000
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    Amphenol Positronic SGM20SSCESS0000-AA

    D-SUB
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    DigiKey SGM20SSCESS0000-AA Tray 9 1
    • 1 $114.26
    • 10 $89.001
    • 100 $70.7643
    • 1000 $70.7643
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    Festo SG-M20X1,5

    ROD CLEVIS
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    DigiKey SG-M20X1,5 Bulk 1
    • 1 $59.03
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    L-com Inc AISGM-2000

    CONAISG 8 PIN MALE CLAMP
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    DigiKey AISGM-2000 Bag 1
    • 1 $39.12
    • 10 $36.5
    • 100 $31.6918
    • 1000 $30.59896
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    Newark AISGM-2000 Bulk 395 1
    • 1 $32.25
    • 10 $28.35
    • 100 $28.35
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    RS AISGM-2000 Bulk 3 Weeks 1
    • 1 $32.46
    • 10 $29.22
    • 100 $29.22
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    Festo KSG-M20X1,5

    COUPLING PIECE
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    DigiKey KSG-M20X1,5 Bulk 1
    • 1 $121.24
    • 10 $121.24
    • 100 $121.24
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    Find more SGM20 price and stock on Findchips.com

    SGM20 Datasheets (68)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SGM2004M Unknown High Frequency Device Data Book (Japanese) Scan PDF
    SGM2004M Unknown FET Data Book Scan PDF
    SGM2005 Shengbang Microelectronics Low Power, Low Dropout, 150mA, RF - Linear Regulators Original PDF
    SGM2005-1.8 Shengbang Microelectronics Low Power, Low Dropout, 150mA, RF - Linear Regulators Original PDF
    SGM2005-2.5 Shengbang Microelectronics Low Power, Low Dropout, 150mA, RF - Linear Regulators Original PDF
    SGM2005-2.8 Shengbang Microelectronics Low Power, Low Dropout, 150mA, RF - Linear Regulators Original PDF
    SGM2006 Shengbang Microelectronics Low Power, Low Dropout, 150mA, RF - Linear Regulators Original PDF
    SGM2006-1.8XN5/TR Shengbang Microelectronics Low Power, Low Dropout, 150mA, RF - Linear Regulators Original PDF
    SGM2006-2.5XN5/TR Shengbang Microelectronics Low Power, Low Dropout, 150mA, RF - Linear Regulators Original PDF
    SGM2006-2.7XN5/TR Shengbang Microelectronics Low Power, Low Dropout, 150mA, RF - Linear Regulators Original PDF
    SGM2006M Unknown FET Data Book Scan PDF
    SGM2006P Unknown FET Data Book Scan PDF
    SGM2007 Shengbang Microelectronics Low Power, Low Dropout, 300mA, RF - Linear Regulators Original PDF
    SGM2007-1.8 Shengbang Microelectronics Low Power, Low Dropout, 300mA, RF - Linear Regulators Original PDF
    SGM2007-2.5 Shengbang Microelectronics Low Power, Low Dropout, 300mA, RF - Linear Regulators Original PDF
    SGM2007-2.7 Shengbang Microelectronics Low Power, Low Dropout, 300mA, RF - Linear Regulators Original PDF
    SGM2008 Shengbang Microelectronics Low Power, Low Dropout, 300mA, RF - Linear Regulators Original PDF
    SGM2008-1.8XN5/TR Shengbang Microelectronics Low Power, Low Dropout, 300mA, RF - Linear Regulators Original PDF
    SGM2008-2.5XN5/TR Shengbang Microelectronics Low Power, Low Dropout, 300mA, RF - Linear Regulators Original PDF
    SGM2008-2.7XN5/TR Shengbang Microelectronics Low Power, Low Dropout, 300mA, RF - Linear Regulators Original PDF

    SGM20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2022C

    Abstract: 2022e
    Text: SGM2022 Dual, Low Dropout, 250mA LDO Regulators GENERAL DESCRIPTION FEATURES The SGM2022 is a dual, low-power, low-dropout, CMOS y Highly Accurate: ±2% linear voltage regulators. It operates from a 2.5V to 5.5V y Ultra-Low Dropout Voltage: input and delivers up to 250mA at each channel.


    Original     		PDF SGM2022 250mA SGM2022 250mV voltag119 2022C 2022e

    Untitled

    Abstract: No abstract text available
    Text: SGM2024 Quad, Low Power, Low Dropout, 200mA, RF-Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2024 is a quad, low-power, low-dropout, CMOS ● Low Output Noise: 30µVRMS TYP 10Hz to 100kHz linear voltage regulator that operates from 2.5V to 5.5V


    Original     		PDF SGM2024 200mA, SGM2024 100kHz) 200mA 220mV

    SGM2016AN

    Abstract: dual-gate
    Text: SGM2016AN GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications


    Original     		PDF SGM2016AN SGM2016AN M-281 900MHz dual-gate

    SGM2016AM

    Abstract: SGM2016AP dual-gate
    Text: SGM2016AM/AP GaAs N-channel Dual-Gate MES FET Description The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone,


    Original     		PDF SGM2016AM/AP SGM2016AM/AP SGM2016AM SGM2016AP 900MHz M-254 SGM2016AM SGM2016AP dual-gate

    x733

    Abstract: sot23-5 package marking X718 X727 x728 SOT23 marking x718 5-PIN x725 RESISTOR X733 2.85V SOT23 300mA sot23-5 package marking bp SOT23 marking BP 5-PIN
    Text: SGM2007/A Low Power, Low Dropout, 300mA, RF - Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2007/A series low-power, low-noise, low-dropout, CMOS linear voltage regulators operate from a 2.5V to 5.5V input and deliver up to 300mA. They are the perfect choice


    Original     		PDF SGM2007/A 300mA, SGM2007/A 300mA. current200 300mA 300mV x733 sot23-5 package marking X718 X727 x728 SOT23 marking x718 5-PIN x725 RESISTOR X733 2.85V SOT23 300mA sot23-5 package marking bp SOT23 marking BP 5-PIN

    SOT89-3D

    Abstract: marking sot89 SGM2013 sg sot89 MARKING TR SOT23-3 ZENER DIODE 0.5v XD33 marking A2 SOT89
    Text: 300mA, Low Power, Low Dropout, 3 -Terminal, Linear Regulators SGM2013 GENERAL DESCRIPTION FEATURES The SGM2013 low-power, low-dropout, CMOS linear voltage regulators operate from a 2.5V to 5.5V input and deliver up to 300mA. They are perfect choice for low voltage,


    Original     		PDF 300mA, SGM2013 SGM2013 300mA. 300mA 300mV SOT89-3D marking sot89 sg sot89 MARKING TR SOT23-3 ZENER DIODE 0.5v XD33 marking A2 SOT89

    Untitled

    Abstract: No abstract text available
    Text: SGM2015 Low Power, Low Dropout, 250mA, RF - Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2015 series low-power, low-noise, low-dropout, z Low Output Noise: 30µVRMS TYP 10Hz to 100kHz CMOS linear voltage regulators operate from a 2.5V to z Ultra-Low Dropout Voltage:


    Original     		PDF SGM2015 250mA, SGM2015 100kHz) 250mA. 250mV 250mA

    x818 diode

    Abstract: No abstract text available
    Text: SGM2008 Low Power, Low Dropout, 300mA, RF - Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2008/A series low-power, low-noise, low-dropout, CMOS linear voltage regulators operate from a 2.5V to 5.5V input and deliver up to 300mA. They are the perfect choice for low voltage, low power


    Original     		PDF SGM2008 300mA, SGM2008/A 300mA. 300mA 300mV 300mA x818 diode

    Untitled

    Abstract: No abstract text available
    Text: SGM2020 Low Power, Low Dropout, RF - Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2020 series low-power, low-noise, low-dropout, y Low Output Noise: CMOS linear voltage regulators operate from a 2.5V to 30µVRMS TYP 10Hz to 100kHz 5.5V input voltage. They are the perfect choice for low


    Original     		PDF SGM2020 SGM2020 100kHz)

    Untitled

    Abstract: No abstract text available
    Text: SGM2021 Low Power, Low Dropout, Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2021 series low-power, low-noise, low-dropout, y Low Output Noise CMOS linear voltage regulators operate from a 2.5V to y Low Dropout Voltage 5.5V input voltage. They are the perfect choice for low


    Original     		PDF SGM2021 SGM2021 300mA

    "GaAs N-channel Dual Gate"

    Abstract: SGM2014AN Sony Semiconductor M-281
    Text: SGM2014AN GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications


    Original     		PDF SGM2014AN SGM2014AN M-281 900MHz "GaAs N-channel Dual Gate" Sony Semiconductor M-281

    Y525

    Abstract: Y528 BZM55B5V6 SGM2005 DFN-6
    Text: SGM2005 Low Power, Low Dropout, 150mA, RF - Linear Regulators GENERAL DESCRIPTION The SGM2005 series low-power, low-noise, low-dropout, CMOS linear voltage regulators operate from a 2.5V to 5.5V input and deliver up to 150mA. They are the perfect choice for low voltage, low power applications. An ultra


    Original     		PDF SGM2005 150mA, SGM2005 150mA. 100kHz) 150mA 150mV Y525 Y528 BZM55B5V6 DFN-6

    BZM55B5V6

    Abstract: SGM2014 sg sot23 marking 1F 6 pin Zener diode sot23-5
    Text: SGM2014 Low Power, Low Dropout, 250mA, RF - Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2014 series low-power, low-noise, low-dropout, CMOS linear voltage regulators operate from a 2.5V to 5.5V input and deliver up to 250mA. They are the perfect choice for low voltage, low power applications.


    Original     		PDF SGM2014 250mA, SGM2014 250mA. current160 250mA 250mV BZM55B5V6 sg sot23 marking 1F 6 pin Zener diode sot23-5

    N-Channel, Dual-Gate FET

    Abstract: SGM2014AM
    Text: SGM2014AM GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications


    Original     		PDF SGM2014AM SGM2014AM 900MHz M-254 N-Channel, Dual-Gate FET

    Untitled

    Abstract: No abstract text available
    Text: SGM2014 Low Power, Low Dropout, 250mA, RF - Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2014 series low-power, low-noise, low-dropout, z Low Output Noise: 30µVRMS TYP 10Hz to 100kHz CMOS linear voltage regulators operate from a 2.5V to z Ultra-Low Dropout Voltage:


    Original     		PDF SGM2014 250mA, SGM2014 100kHz) 250mA. 250mV 250mA

    Untitled

    Abstract: No abstract text available
    Text: SGM2023 Quad, Low Power, Low Dropout, 200mA, RF-Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2023 is a quad, low-power, low-dropout, CMOS ● Low Output Noise: 30µVRMS TYP 10Hz to 100kHz linear voltage regulator that operates from 2.5V to 5.5V


    Original     		PDF SGM2023 200mA, SGM2023 100kHz) 200mA 220mV

    SGM2004M

    Abstract: sgm2004
    Text: SGM2004M SONY. GaAs N-channel Dual Gate MES FET Description S G M 2 0 0 4 M is an N -chan nel d u a l g a te G a A s M E S F E T f o r U H F ba n d lo w -n o ise a m p lific a tio n . T h is F E T is s u ita b le f o r a w id e range o f a p p lic a tio n s in c lu d in g T V tu n e rs, c e llu la r ra d io s


    OCR Scan     		PDF SGM2004M SGM2004M sgm2004

    Untitled

    Abstract: No abstract text available
    Text: SONY SGM2014AN GaAs N-channel Dual Gate MES FET Preliminary Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF


    OCR Scan     		PDF SGM2014AN SGM2014AN 900MHz M-281 JO-651

    Untitled

    Abstract: No abstract text available
    Text: SONY S G M 2014A M GaAs N-channel Dual Gate MES FET Preliminary D escription The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF


    OCR Scan     		PDF SGM2014AM 900MHz DG2D044 SGM2014AM M-254

    fet dual gate sot143

    Abstract: SGM2014M
    Text: SGM2014M SONY, GaAs N-channel Dual Gate MES FET_ hor the availability of this product, please contact the sales officir] Description Package Outline Unit : mm The SGM2014M is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is


    OCR Scan     		PDF SGM2014M SGM2014M 900MHz Ga-18dB OT-143 -64l0Â fet dual gate sot143

    Sony Semiconductor M-281

    Abstract: No abstract text available
    Text: SONY GaAs N-channel Dual Gate MES FET Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.


    OCR Scan     		PDF SGM2014AN 900MHz 900MHz M-281 SGM2014AN M-281 Sony Semiconductor M-281

    Untitled

    Abstract: No abstract text available
    Text: SONY GaAs N-channel Dual Gate MES FET Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.


    OCR Scan     		PDF SGM2014AM 900MHz SGM2014AM M-254

    TX-429D

    Abstract: SGM2006M ne gJ8 sgm2006 TM100-H TM101 TM200-H TM201-M 12GHz TM100
    Text: - 164 - f M É¡ tt € m & m it ñ V*t* Ì % K SGH5003E 'i z - SGH5602E SGM2004M SGM2006M/P V * GaAsHEMT N D 5 DS LN A GaAsHEMT N D 5 DS UHF LN A GaAs/MES N D 12 DSX UHF LN A GaAs/MES N D 12 DSX * (V) -3. 5 0 98 aa. të I* MW LN A m V- 3È X (A) ft P d/P c h


    OCR Scan     		PDF

    N-Channel, Dual-Gate FET

    Abstract: No abstract text available
    Text: SONY SGM2016M/P1 GaAs N-channel Dual-Gate MES FET D escription Package O utline Unit : mm The SGM2016M/P is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including U H FT V tuners, cellular radios, and DBS IF amplifiers.


    OCR Scan     		PDF SGM2016M/P1 SGM2016M/P 900MHz N-Channel, Dual-Gate FET