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    SGB10N60 Price and Stock

    Infineon Technologies AG SGB10N60AATMA1

    IGBT 600V 20A 92W TO263-3
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    DigiKey SGB10N60AATMA1 Reel
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    Rochester Electronics SGB10N60AATMA1 163 1
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    Infineon Technologies AG SGB10N60A

    FAST IGBT IN NPT-TECHNOLOGY Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-263AB
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    ComSIT USA SGB10N60A 1,000
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    SGB10N60 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SGB10N60 Infineon Technologies 10A 600V TO263AB SMD IGBT Original PDF
    SGB10N60 Siemens Fast S-IGBT in NPT-Technology Original PDF
    SGB10N60 Siemens Original PDF
    SGB10N60A Infineon Technologies IGBT Discretes; Package: PG-TO263-3; Switching Frequency: Fast IGBT 10-40 kHz; Package: D2PAK (TO-263); VCE (max): 600.0 V; IC(max) @ 25°: 20.0 A; IC(max) @ 100°: 10.6 A Original PDF
    SGB10N60A Infineon Technologies Fast IGBT in NPT-Technology Original PDF
    SGB10N60AATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 20A 92W TO263-3 Original PDF

    SGB10N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    g10n60

    Abstract: SGB10N60A J-00M SGB10N60A equivalent
    Text: SGB10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGB10N60A SGB10N60A g10n60 J-00M SGB10N60A equivalent

    SGB10N60A

    Abstract: SGP10N60A SGW10N60A Q67040-S4510
    Text: SGP10N60A Preliminary SGB10N60A, SGW10N60A Fast-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGP10N60A SGB10N60A, SGW10N60A O-220AB Q67040-S4457 SGB10N60A O-263AB Q67040-S4507 O-247AC SGB10N60A SGP10N60A SGW10N60A Q67040-S4510

    SGW10N60A

    Abstract: sgp10n60a SGB10N60A Q67040-S4510
    Text: SGP10N60A, SGB10N60A SGW10N60A Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGP10N60A, SGB10N60A SGW10N60A P-TO-220-3-1 O-220AB) P-TO-263-3-2 P-TO-247-3-1 O-263AB) O-247AC) O-220AB SGW10N60A sgp10n60a SGB10N60A Q67040-S4510

    G10N60A

    Abstract: g10n60 G10N60A DATASHEET PG-TO-263-3-2 PG-TO263-3-2 SGB10N60A S025A
    Text: SGB10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGB10N60A PG-TO-263-3-2 G10N60A G10N60A g10n60 G10N60A DATASHEET PG-TO-263-3-2 PG-TO263-3-2 SGB10N60A S025A

    g10n60

    Abstract: No abstract text available
    Text: SGB10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGB10N60A P-TO-263-3-2 O-263AB) G10N60 PG-TO-263-ntain g10n60

    Untitled

    Abstract: No abstract text available
    Text: SGB10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGB10N60A PG-TO-263-3-2 O-263AB) G10N60 PG-TO-263ntain

    Q67041-A4710-A2

    Abstract: SGB10N60 SGP10N60 SGW10N60
    Text: SGP10N60 SGB10N60, SGW10N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGP10N60 SGB10N60, SGW10N60 O-220AB Q67041-A4710-A2 SGB10N60 O-263AB Q67041-A4710-A4 O-247AC Q67041-A4710-A2 SGB10N60 SGP10N60 SGW10N60

    g10n60

    Abstract: No abstract text available
    Text: SGB10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:


    Original     		PDF SGB10N60A SGB10N60A g10n60

    bup400d

    Abstract: Q67041-A4710-A2 bup400 IC Packages SGP10N60 siemens igbt SGB10N60 SGW10N60 Q67040S4234 BUP400D SMD
    Text: Preliminary data SGP10N60, SGB10N60, SGW10N60 Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 µs • Designed for moderate and high frequency applications:


    Original     		PDF SGP10N60, SGB10N60, SGW10N60 SGP10N60 O-220AB Q67041-A4710-A2 SGB10N60 O-263AB Q67041-A4710-A4 bup400d Q67041-A4710-A2 bup400 IC Packages SGP10N60 siemens igbt SGB10N60 SGW10N60 Q67040S4234 BUP400D SMD

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    TRANSISTOR D412 smd

    Abstract: mosfet D414 d409 mosfet mosfet d413 TRANSISTOR D405 mosfet d408 D409 transistor D408 mosfet D404 mosfet D405 mosfet
    Text: Freescale Semiconductor, Inc. 3-Phase Switched Reluctance High-Voltage Power Stage User’s Manual For More Information On This Product, Go to: www.freescale.com A G R E E M E N T Motorola Embedded Motion Control N O N - D I S C L O S U R E Freescale Semiconductor, Inc.


    Original     		PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


    Original     		PDF B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635

    igbt dimmer

    Abstract: SKW30N60HS SGP15N120 igbt 2A SKP15N60 SKW25N120 220 volt dimmer circuit SGW25N120 smps 12 volt SKW30N60
    Text: P R O D U C T B R I E F Fast & H i g h S p e e d I G BT for Industrial and Consumer Applications As Single IGBT version or DuoPackTM with very soft, fast recovery anti-parallel EmConTM Diode IGBT & DuoPack TM Applications Benefits • Motor Drives ■ Easy paralleling


    Original     		PDF B152-H7942-X-X-7600 igbt dimmer SKW30N60HS SGP15N120 igbt 2A SKP15N60 SKW25N120 220 volt dimmer circuit SGW25N120 smps 12 volt SKW30N60

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
    Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package


    Original     		PDF 615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D

    SIPC69N60C3

    Abstract: SPW20N60S5 equivalent sipc01n80c2 P-Channel Depletion Mosfets SKP15N60 BUZ78 equivalent SPNA2N80C2 BUP314 SIPC26N80C3 TDA16822
    Text: File name Products Silicon Carbide Diodes thinQ 300V / 600V SDP06S60 SDP04S60 SDB10S30 SiC_Pspice.zip Smart High Side Switches High-Current PROFET BTS555 BTS550P BTS650P PROFET_Pspice.exe Smart Low Side Switches TEMPFET / Speed TEMPFET HITFET BTS114A BSP78


    Original     		PDF SDP06S60 SDP04S60 SDB10S30 BTS555 BTS550P BTS650P BTS114A BSP78 BTS115A BTS134D SIPC69N60C3 SPW20N60S5 equivalent sipc01n80c2 P-Channel Depletion Mosfets SKP15N60 BUZ78 equivalent SPNA2N80C2 BUP314 SIPC26N80C3 TDA16822

    SGH80N60RUFD

    Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
    Text: Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name Fairchild * Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*)


    Original     		PDF SGR2N60UFD SGP10N60RUF SGP10N60RUFD SGH10N60RUFD SGW10N60RUFD SGP06N60 SKB10N60 BUP400D SGB15N60 SGH80N60RUFD bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120

    bup400d

    Abstract: No abstract text available
    Text: Preliminary data SIEMENS SGP10N60, SGB10N60, SGW10N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:


    OCR Scan     		PDF SGP10N60, SGB10N60, SGW10N60 O-220AB O-263AB SGP10N60 Q67041-A4710-A2 SGB10N60 bup400d

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


    OCR Scan     		PDF 615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S