hall effect 4 pin out
Abstract: hall effect 4 pin out ab HALL EFFECT IC APPLICATIONS hall sensor 4-pin ATS616LSG ATS616LSGTN-T AEC-Q100-002 ATS612LSB 72* hall IC 3 pole 80 E hall effect sensor 3 pin
Text: ATS616LSG Dynamic Self-Calibrating Peak-Detecting Differential Hall Effect Gear Tooth Sensor IC Package SG, 4-pin SIP 12 34 1. VCC 2. VOUT 3. Test Pin Tie to GND 4. GND The ATS616 gear-tooth sensor IC is a peak-detecting device that uses automatic gain control and an integrated capacitor to provide extremely accurate gear edge
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ATS616LSG
ATS616
ATS616LSG-DS,
hall effect 4 pin out
hall effect 4 pin out ab
HALL EFFECT IC APPLICATIONS
hall sensor 4-pin
ATS616LSG
ATS616LSGTN-T
AEC-Q100-002
ATS612LSB
72* hall IC 3 pole
80 E hall effect sensor 3 pin
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Untitled
Abstract: No abstract text available
Text: ATS616LSG Dynamic Self-Calibrating Peak-Detecting Differential Hall Effect Gear Tooth Sensor Package SG, 4-pin SIP 12 34 1. VCC 2. VOUT 3. Test Pin Tie to GND 4. GND The ATS616 gear-tooth sensor is a peak-detecting device that uses automatic gain control and an integrated capacitor to provide extremely accurate gear edge detection down to low operating speeds. Each sensor module consists of a high-temperature plastic shell that holds together a samarium-cobalt magnet, a pole piece,
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ATS616LSG
ATS616
ATS616LSG-DS
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4 pin hall sensor
Abstract: AEC-Q100-002 ATS612LSB ATS616LSG ATS616LSGTN-T tooth hall Sensor diagram allegro dual hall sensor ic camshaft sensor axial sensing
Text: ATS616LSG Dynamic Self-Calibrating Peak-Detecting Differential Hall Effect Gear Tooth Sensor Package SG, 4-pin SIP 12 34 1. VCC 2. VOUT 3. Test Pin Tie to GND 4. GND The ATS616 gear-tooth sensor is a peak-detecting device that uses automatic gain control and an integrated capacitor to provide extremely accurate gear edge detection down to low operating speeds. Each sensor module consists of a high-temperature plastic shell that holds together a samarium-cobalt magnet, a pole piece,
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ATS616LSG
ATS616
ATS616LSG-DS,
4 pin hall sensor
AEC-Q100-002
ATS612LSB
ATS616LSG
ATS616LSGTN-T
tooth hall Sensor diagram
allegro dual hall sensor ic
camshaft sensor axial sensing
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RB520S-30
Abstract: diode MARKING CODE sg diode sg 5 ts
Text: RB520S-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Low Current Rectification and High Speed Switching Applications PINNING DESCRIPTION PIN Features • Extremely small surface mounting type. • Low IR. IR=0.1uA Typ. • High reliability. 1 Cathode
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RB520S-30
OD-523
160Hz
OD-523
RB520S-30
diode MARKING CODE sg
diode sg 5 ts
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diode sg 5 ts
Abstract: diode MARKING CODE sg diode sg 12 SG DIODE MARKING RB520S-30 diode sg 01 diode sg 03
Text: RB520S-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Low Current Rectification and High Speed Switching Applications PINNING DESCRIPTION PIN Features • Extremely small surface mounting type. • Low IR. IR=0.1uA Typ. • High reliability. 1 Cathode
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RB520S-30
OD-523
160Hz
OD-523
diode sg 5 ts
diode MARKING CODE sg
diode sg 12
SG DIODE MARKING
RB520S-30
diode sg 01
diode sg 03
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teledyne relay 412 screening
Abstract: TELEDYNE RELAYS DATE CODE teledyne diode Teledyne Relays 412 marking code 351 diode TELEDYNE 412
Text: TELEDYNE RELAYS Page 1 of 40 DETAIL SPECIFICATION FOR HIREL 412 RELAYS RELAYS, HIGH RELIABILITY, ELECTROMECHANICAL, NON-LATCHING, DPDT, LOW LEVEL TO 1.0 AMPERE, WITH OPTIONAL DIODE S FOR COIL TRANSIENT SUPPRESSION AND POLARITY REVERSAL PROTECTION TR-HIREL-1/412
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TR-HIREL-1/412
teledyne relay 412 screening
TELEDYNE RELAYS DATE CODE
teledyne diode
Teledyne Relays 412
marking code 351 diode
TELEDYNE 412
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TELEDYNE RELAYS DATE CODE
Abstract: No abstract text available
Text: TELEDYNE RELAYS Page 1 of 43 Feb 21, 2006 11:30 am DETAIL SPECIFICATION FOR HIREL 412V RELAYS RELAYS, HIGH RELIABILITY, HIGH VIBRATION, ELECTROMECHANICAL, NON-LATCHING, DPDT, LOW LEVEL TO 1.0 AMPERE, WITH OPTIONAL DIODE S FOR COIL TRANSIENT SUPPRESSION AND
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TR-HIREL-1/412V
TELEDYNE RELAYS DATE CODE
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M74HC240
Abstract: No abstract text available
Text: CZZ SG S-TtiO M SO N *71. ItaneiaSlilLKBTnaWOIBi M54HC240/241/244 M74HC240/241/244 HC240 OCTAL BUS BUFFER WITH INVERTED 3-STATE OUTPUTS HC241/244 OCTAL BUS BUFFER WITH NON INVERTED 3-STATE OUTPUTS PRELIMINARY DATA • HIGH SPEED tPD=12 ns TYP. at VCc = 5V
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M54HC240/241/244
M74HC240/241/244
HC240
HC241/244
54/74LS240/244
M54/74HC241
M54/74HC240
HC240
M54/74HC240/241/244
M74HC240
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74HC240HV
Abstract: No abstract text available
Text: / r 7 SG S -TH O M S O N ^7# M54HC240HV/241HV M74HC240HV/241HV OCTAL BUS BUFFER WITH 3 STATE OUTPUTS HC240HV: INVERTED - HC241HV NON INVERTED • HIGHSPEED tpD = 12 ns TYP. at VCC=5V ■ LOW POWER DISSIPATION Ice = 4 nA (MAX.) at T a = 25 °C ■ HIGH NOISE IMMUNITY
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M54HC240HV/241HV
M74HC240HV/241HV
HC240HV:
HC241HV
15LSTTL
HC240/241
M54/74HC240HV
74HC240HV
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M74HC726
Abstract: No abstract text available
Text: M54HC7266 M74HC7266 / = T SG S-TtiO M SO N ü^lD g^(Q [lD=[i ï^©R!lD(gi QUAD EXCLUSIVE NOR GATE • HIGH SPEED tpD = 12 ns (TYP.) at VCc = 5V ■ LOW POWER DISSIPATION Ice = 1 (MAX.) at TA = 25°C to ■ HIGH NOISE IMMUNITY Vnih = VNlL = 28% VCc (MIN.)
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M54HC7266
M74HC7266
M54HC7266
M74HC7266
54/74LS7145
M74HC726
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decoder 3 to 8
Abstract: No abstract text available
Text: / = T SG S-TtiO M SO N Ä T # M tM iLlûïïtM O O S M54HC155 M74HC155 DUAL 2 TO 4 LINE DECODER 3 TO 8 LINE DECODER • HIGHSPEED tPD = 12 ns TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION ,lcc = 4 nA (MAX.) AT Ta = 25 °C ■ HIGH NOISE IMMUNITY Vnih = Vnil = 28 % Vcc (MIN.)
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M54HC155
M74HC155
54/74LS155
M54HC155F1R
M74HC155M1R
M74HC155B1R
M74HC155C1R
M54/74HC155
decoder 3 to 8
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MTP3055A
Abstract: MTP3055AFI
Text: r= 7 SG S -THOM SON ^ 7 /L » » i t l Ê Ï Ï » * ! MTP3055A MTP3055AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^D S on MTP3055A MTP3055AFI 60 V 60 V 0.15 fi 0.15 fi Id " 12 A 10 A • ULTRA FAST SW ITCHING-UP TO > 100KHz • LOW DRIVE ENERGY FOR EASY DRIVE
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MTP3055A
MTP3055AFI
100KHz
500ms
MTP3055AFI
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Untitled
Abstract: No abstract text available
Text: £ = T SG S-T H O M SO N HIGH SIDE SMART POWER SOLID STATE RELAY TARGET DATA TYPE V dss RD S on (OUT Vcc VN05H SP 45 V 0.18 £2 12 A 36 V • OUTPUT CURRENT (CONTINUOUS): 6A @ T c = 2 5 ° C ■ 5V LOGIC LEVEL COMPATIBLE INPUT . THERMAL SHUT-DOWN . UNDER VOLTAGE SHUT-DOWN
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VN05H
VN05HSP
PowerSO-10â
0068039-C
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Untitled
Abstract: No abstract text available
Text: SbE » • 7 ^ 2 3 7 0040204 b?7 m SG TH T / = 7 S C S -T H O M S O N ÎMœmtIgTrGMOgS S G - V Z - Z l - 12 M54HC390 M74HC390 S-THOMSON DUAL DECADE COUNTER ■ HIGH SPEED tpD = 13 ns Typ at Vcc = 5V ■ LOW POWER DISSIPATION lCC = 4 ¡iA (MAX.) at Ta = 25°C
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M54HC390
M74HC390
54/74LS390
0D4D210
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SG 21 DIODE SMD
Abstract: diode sg 36 SQ2014 14104BEA 14103BEA SG2023
Text: SG2000 SERIES 5 IL IC D N GENERAL HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS L IN E A R IN T E G R A T E D C IR C U IT S DESCRIPTION FEA TU RES The SG 2000 series integrates seven NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in
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SG2000
600mA
500mA
20-PIN
2XXXLV883B
SG 21 DIODE SMD
diode sg 36
SQ2014
14104BEA
14103BEA
SG2023
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diode sg 64
Abstract: SG5774AJ SG5772J SG25768 sf 819 d 1N5772 JANTX 1N5768 SG25770J
Text: , SG5768/68A SG5770/70A, SG5772/72A, SG5774/74A SG25768, SG25770, SG6496/96A DIODE ARRAY CIRCUITS SILICON GENERAL LINEAR IN TEGRATED CIRCUITS DESCRIPTION FEATURES The Silicon General series of diode arrays feature high breakdown, high speed diodes in a variety of configurations.
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SG5768/68A
SG5770/70A,
SG5772/72A,
SG5774/74A
SG25768,
SG25770,
SG6496/96A
500mA
14-PIN
diode sg 64
SG5774AJ
SG5772J
SG25768
sf 819 d
1N5772 JANTX
1N5768
SG25770J
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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DIODE S3V
Abstract: DIODE S3V 09 14103BEA M38510/14103BEA vcr 2020 soc 500ma SG2002 SG2000 m38510/14103 LF350
Text: SG2000 SERIES S IL IC D N HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS GENERAL LINEAR INTEG RATED C IR C U ITS DESCRIPTION FEATURES The SG2000 series integrates seven NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in
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SG2000
500mAcurrent
16-PIN
SG2XXXJ/883B
20-PIN
SG2XXXL/883B
DIODE S3V
DIODE S3V 09
14103BEA
M38510/14103BEA
vcr 2020
soc 500ma
SG2002
m38510/14103
LF350
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smd DA RN
Abstract: No abstract text available
Text: SG2000 SERIES 5IUC0N HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS LINEAR INTEGRATED CIRCUITS DESCRIPTION FEATURES The SG2000 series integrates seven NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in many military, aerospace, and industrial applications that require
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SG2000
500mAcurrent
16-PIN
20-PIN
SG2XXXL/883B
fi553fi
smd DA RN
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diode sg 46
Abstract: SG DIODE MARKING diode sg 52 IGBT 2000V .50A
Text: £ ÿ j SG S-TH O M SO N n0 œ i l L I 0 ra [iïlBCi S T T A 5 1 2 D /F TURB O SW ITC H ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 5A V rrm 1200V (typ) 45ns (max) 2.0V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS
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STTA512D
ISOWATT220AC
STTA512F
diode sg 46
SG DIODE MARKING
diode sg 52
IGBT 2000V .50A
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Untitled
Abstract: No abstract text available
Text: : SG S-THO M SO N BYW99P/PI/W HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES PRELIMINARY DATASHEET FEATURES • . ■ . . ■ SUITED FORSMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY
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BYW99P/PI/W
BYW99PI-200
T0247
BYW99P-200
T0247
BYW99W-200
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ESJA92
Abstract: ESJA92-10 T151 high voltage diode 100 kv esja 212es 12KV 2ma
Text: ESJ A92 1 O k v , 1 2 k V : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJA92i±p ESJA92 is high reliability resin molded type high speed high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. : Features
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ESJA92
ESJA92lÂ
I95t/R89)
Shl50
ESJA92-10
T151
high voltage diode 100 kv
esja
212es
12KV 2ma
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BYT230PIV400
Abstract: Diodes a2 BYT230PIV-400
Text: BYT230PIV-400 BYT231PIV-400 SGS-THOMSON RfflDOœiLiOir^^QilDSi FAST RECOVERY RECTIFIER DIODES FEATURES • ■ ■ ■ VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE: Insulating voltage = 2500 V r m s
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BYT230PIV-400
BYT231PIV-400
BYT231
PIV-400
BYT230PIV-400
BYT230PIV400
Diodes a2
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Untitled
Abstract: No abstract text available
Text: BYT260PIV-400 BYT261PIV-400 SGS-THOMSON RfflDOœiLiOir^^QilDSi FAST RECOVERY RECTIFIER DIODES FEATURES • ■ ■ ■ VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE: Insulating voltage = 2500 V r m s
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BYT260PIV-400
BYT261PIV-400
BYT261
PIV-400
BYT260PIV-400
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