uv diode
Abstract: SFH 291 uv photodiode sfh291 eprom UV eraser Q62702-P1038 UV flame detection
Text: SFH 291 SFH 291 fmo06427 Silizium-Fotodiode mit hoher UV-Empfindlichkeit Silicon Photodiode with High UV Sensitivity Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im
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fmo06427
uv diode
SFH 291
uv photodiode
sfh291
eprom UV eraser
Q62702-P1038
UV flame detection
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L 358
Abstract: cl 1100 SFH 291 PDU-C119 photodiode uv 03 SFH 191 uv photodiode
Text: PHOTONIC Silicon Photodiode, U.V. Enhanced Photoconductive SFH 291 Industry Equivalent Type PDU-C119 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] Ø0.325 [8.25] WINDOW CAP (WELDED) 0.168 [4.26] 0.030 [0.76] 0.075 [1.91] Ø0.250 [6.35] CL WIRE BONDS 0.500
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PDU-C119
PDU-C119
100-PDU-C119
L 358
cl 1100
SFH 291
photodiode uv 03
SFH 191
uv photodiode
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cl 1100
Abstract: SFH 291 PDU-C119 uv photodiode
Text: PHOTONIC Silicon Photodiode, U.V. Enhanced Photoconductive SFH 291 Industry Equivalent Type PDU-C119 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] WINDOW CAP (WELDED) Ø0.325 [8.25] Ø0.250 [6.35] 0.168 [4.26] 0.030 [0.76] CL 0.075 [1.91] WIRE BONDS 0.500
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PDU-C119
PDU-C119
100-PDU-C119
cl 1100
SFH 291
uv photodiode
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PDU-V119
Abstract: SFH 291
Text: PHOTONIC DETECTORS INC. Silicon Photodiode, U.V. Enhanced Photovoltaic Type PDU-V119 SFH 291 Industry Equivalent PACKAGE DIMENSIONS INCH [mm] Ø0.325 [8.25] WINDOW CAP (WELDED) Ø0.250 [6.35] 0.030 [0.76] CL 0.168 [4.26] 0.075 [1.91] WIRE BONDS 0.500 [12.70]
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PDU-V119
100-PDU-V119
PDU-V119
SFH 291
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Quartz window
Abstract: Photodiode, TO-5 SFH 291 SFH 325 equivalent
Text: PHOTONIC DETECTORS INC. Silicon Photodiode, U.V. Enhanced Photovoltaic SFH 291 Industry Equivalent Type PDU-V119-Q PACKAGE DIMENSIONS INCH [mm] Ø0.325 [8.25] Ø0.250 [6.35] QUARTZ WINDOW CAP (WELDED) 0.030 [0.76] CL 0.168 [4.26] 0.075 [1.91] WIRE BONDS
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PDU-V119-Q
100-PDU-V119-Q
Quartz window
Photodiode, TO-5
SFH 291
SFH 325 equivalent
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SFH 291
Abstract: PDU-V119 SFH 508 SFH 325 equivalent
Text: PHOTONIC DETECTORS INC. Silicon Photodiode, U.V. Enhanced Photovoltaic Type PDU-V119 SFH 291 Industry Equivalent PACKAGE DIMENSIONS INCH [mm] WINDOW CAP (WELDED) Ø0.325 [8.25] Ø0.250 [6.35] 0.168 [4.26] 0.030 [0.76] CL 0.075 [1.91] WIRE BONDS 0.500 [12.70]
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PDU-V119
PDU-V119
100-PDU-V119
SFH 291
SFH 508
SFH 325 equivalent
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SIEMENS Phototransistors BPY
Abstract: 2108a siemens dioden SFH-506 SFH100 BPW21 300FA 2108 A SFH 314 SFH-10
Text: Silicon Photodetectors Si-Fotodetektoren Summary of Types Typenübersicht 1. Integrierter Empfänger Integrated Receiver 2. Fototransistoren Phototransistors ♦ SFH 506 BPX 81 3. SFH 300/FA SFH 313/FA SFH 314/FA BP 103 SFH 302 SFH 305 BPX 83 BP 104 F BPW 34 FA
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300/FA
313/FA
314/FA
309/FA
310/FA
309P/PFA
303/FA
203/FA
213/FA
214/FA
SIEMENS Phototransistors BPY
2108a
siemens dioden
SFH-506
SFH100
BPW21
300FA
2108 A
SFH 314
SFH-10
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v 325 t
Abstract: siemens SFH nm
Text: SIEMENS NPN-Silizium-Fototransistor im SMT SIDELED -Gehäuse Silicon NPN Phototransistor in SMT SIDELED -Package SFH 325 SFH 325 FA Maße in m m , w enn nicht anders angegeben/D im ensions in mm, unless otherw ise specified. Wesentliche Merkmale Features
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SFH325FA
v 325 t
siemens SFH nm
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SFH2505
Abstract: 2505FA
Text: SIEMENS SFH 250Q/RA SFH 2505/FA Very Short Switching Time Silicon PIN Photodiode Dimensions in inches mm SFH250WFA .145(3.7). .130(3.37 .295(7.51 .216(5.5* R.08K2.05) _ JJP 6 (2 .7 ) >077(1.95) *~tÔ 90(2.3)/ 0-0.04 (OjO.D L .189(4.8) .173(4.4) .515(13.1)
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SFH250WFA
250Q/RA
2505/FA
GE006960
SFH2505/FA
GE006961
SFH2500/FA/2505/FA
11-BO
SFH2600FA/2505FA
2500FA/2505FA
SFH2505
2505FA
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617G
Abstract: sfh diode 617 SFH617 reflective optocoupler puls detector sfh617g
Text: SIEMENS FEATU R ES SFH617G 5.3 kV TRIOS * OPTOCOUPLER Package Dimensions in Inches mm * C u rre n t T ra n s fe r R atios: SFH 617(3-1,40-80% S F H 6 1 7 G -2 ,63-125% SFH 6 1 7 G -3 ,100-200% S F H 6 1 7 G -4 ,160-320% * C reepage D is ta n c e s a n d C learances
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SFH617G
SFH617G
617G
sfh diode 617
SFH617
reflective optocoupler
puls detector
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Untitled
Abstract: No abstract text available
Text: SFH 216 SIEMENS Silicon PIN Photodiode Dimensions in inches mm .291 (7.4) .259 (6.6) .208 (5.3) 197 (5.0) .571 (14.5) .492 (12.5) Cathode T 0.189(4.8) ¥ 0.100 (2.54) 0.181 4.6) _L A .018 (0.45) .106 (2.7) 1Glass Lens Chip Location , 220 (5.6), .208 (5.3)
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GE006314
18-pln
fl535t
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eprom UV eraser
Abstract: SFH 291
Text: SIEMENS SFH 291 fmo06427 Silizium-Fotodiode mit hoher UV-Empfindlichkeit Silicon Photodiode with High UV Sensitivity M aße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified. Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im
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UVA photodiode
Abstract: SFH291 SFH 291 UV diode 250 nm
Text: SIEMENS SFH 291 SILICON PHOTODIODE HIGH UV SENSITIVITY Package Dimensions in Inches mm FEATURES Maximum Ratings * Anode Marking: Tab at Package Bottom Operating and Storage Temperature Range (TOP, Tgtg) .- 40° to +80”C Soldering Temperature (2 mm from case bottom) (Ta,tS3 s . .230°C
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SFH291
UVA photodiode
SFH291
SFH 291
UV diode 250 nm
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p945
Abstract: bpw 81 t fotodiode p1038 SFH100 photodiode 1100 nm fotodioden
Text: Si-Fotodetektoren Silicon Photodetectors 7. Fotodioden für spezielle Wellenlängen Package Type <P deg. 7. Photodiodes for Special Wavelengths R adiant sensitive area mm2 /r nA A/W 7.1 UV-em pfindliche Fotodiode SFH 291 f rei U t O rdering code Fig. Q 62702-P1038
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62702-P1038
BPX60
Q62702-P54
BPX61
62705-P25
BPY12
Q62702-P9
62702-P
p945
bpw 81 t
fotodiode
p1038
SFH100
photodiode 1100 nm
fotodioden
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10 35L DIODE
Abstract: No abstract text available
Text: SIEMENS SFH 291 High UV Sensitivity Silicon Photodiode Dimensions in inches mm .200 228 (5.8) 0.326(8.3) 0.314(8.0) Anode (5.08) .236 (6.0) 134 (3.4) Ì 18 (3.0) .570(14.5) .491 (12.5) -l X f 0 .018 (0.45) Characteristics Ta=25°C, Std. Light A, T=2856 K
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2856K
18-pln
fl535t
10 35L DIODE
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siemens 207a
Abstract: No abstract text available
Text: bGE D ûE3SbOS Q04b7D3 bö5 « S I E G SIEMENS 'S 3 SFH 207A SILICON PIN PHOTODIODE SIEMENS AKTIENGESELLSCHAF Package Dimensions in Inches mm .904 (23.0) .079 (2.0) .055(1.4) .865 (22.0) .110(2.8) .086 (2.2) .307 (7.8) '.291 (7.4) .035 (,9)_ .028 (.7) .609(15.5)
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Q04b7D3
fl235bDS
siemens 207a
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5234d
Abstract: No abstract text available
Text: SIEMENS FEATURES SFH 610/611/615 5.3 kV TRIOS OPTOCOUPLER HIGH RELIABILITY Package Dimensions in Inches mm * High Current Transfer Ratio» at 10 mA: 40-320% a t1 mA: 60% typical (>13) .307 ( 7 .8 ) .291 (7.4) • Low CTR Degradation * Good CTR Linearity Depending on Forward
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ir tk 69
Abstract: L271
Text: SIEMENS SFH 2910 FA Silicon Photodiode Dimensions in inches mm l 271(6.9) not flat .020(0.5) t.012(0.3) Radiant sensitive area .071(1.8) -047(1.2) .oápüí .016(0.4) 157(4.0) 1,34(34) 1.26(32) Approx. weight 0.25g • A “I" I í ■ 2.54rr .200(5.1) .185(4.7)
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ge006651
OHF00075
SFH2910FA
ir tk 69
L271
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d 6283 ic
Abstract: diode 628 comparative tracking index SFH620 SFH628-2 SFH628-3 SFH628-4 6283 ic SFH 291 DIN 40046
Text: SIEMENS DESCRIPTION The SFH 620 is a DIP-4 optocoupler which has two bidirectional infrared emitters. This enables the transmission of AC voltage signals while the circuits are electrically isolated. High isolation test voltage and high current transfer ratios characterize this reflective-mode
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smd 6PIN "vhz"
Abstract: SIEMENS Germanium
Text: SFH 231 SIEMENS Germanium PIN Photodiode D im ensions in in ch e s mm .291 (7.4) .259 (6.6) .571 (14.51 .492(12.5) ,208 (5.3), 197 (5.0) 0.100 Cathode 0.189(4.8) 0.181 (4.6) (2.54) J A .018(0.45) l .106 (2.7) • ' Glass Lens Chip Location FEATURES • Especially suitable for applications from 600
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GE006314
18-pln
fl535t
smd 6PIN "vhz"
SIEMENS Germanium
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C02S
Abstract: Co750
Text: SIEMENS FEATURES SFH 620 5.3 kV TRIOS OPTOCOUPLER AC VOLTAGE INPÜT Package Dimensions in Inches mm * High Current Transfer Ratios at 10 mA: 40-320% at 1 mA: 45% typical (>13) * Low CTR Degradation . 307 (7 8>_ .291 (7 4) .255 (6 5 )_ '2 4 8 ( 6 .3 ) * Good CTR Linearity Depending on Forward
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SFH620
C02S
Co750
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transistor r 606 j
Abstract: transistor s46 sfh606 opto coupling transistor Siemens S35
Text: SIEMENS C M P N T S i OPTO MME D Ô23fe>32b QOGSGbti 5 B S I E X SIEMEMS SFH 606 5.3 kV TRIOS* OPTOCOUPLER HIGH REL/FAST TRANSISTOR •Hl- S3 Package Dimensions In Inches mm •307 (7.B) .291 (7.4) 1 .256(6.5) 548(6.3) E E E 1 a 3 3 Ï J base MO D E E
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Ass25eC
transistor r 606 j
transistor s46
sfh606
opto coupling transistor
Siemens S35
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SFH207A
Abstract: No abstract text available
Text: SIEMENS SFH 207A SILICON PIN PHOTODIODE P a cka g e D im e n s io n s in In ch e s m m .904 (23.0) .079 (2.0) .055(1.4) .865 (22.0) .307 (7.8) .291 (7.4) 110 ( 2 .8 ) .086 (2.2)' .035 (.9)_ .028 ( .7) .609(15.5) .570(14.5) Seal Radiant sensitive area .381 X .381 (9 69 X 9.69)
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SFH4580
Abstract: No abstract text available
Text: SIEMENS SPH 4580 SFH 4585 GaAIAs Infrared Emitters <880 nm Dimensions in inches mm .295 (7.5) .216(5.5) R.O01(2.O5) •145(30 . , .1 C J06(2.7) >077(1.95) •S3Û0,« 1 r s « 2'3)^ . 0 4 = rf (0^0 .1) 106(2.7) !.7> p î ■.126(3.2) R. t .578(14.7) .515(13.1)
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GE006960
SFH4585
GE006961
950nm1000
100mA
SFH4580/4585
SFH4580
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