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    SF 122 TRANSISTOR Search Results

    SF 122 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SF 122 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CIRCUIT BREAKER AEG me 800

    Abstract: catalog for 3RT series contactor* siemens Weidmuller upac Telemecanique catalog 9101900000 Siemens 4-20mA Loop Isolator catalog for 3RT Power contactor* siemens upac MCB 10 AMP 87426
    Text: CATALOGUE 10 2006/2007 Short Form Catalogue Quick Reference Guide Company profile Weidmüller is the leading manufacturer of components for electrical and electronic interconnection technologies. The company develops, produces and sells customer-oriented solutions comprising the entire Weidmüller product portfolio.


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    transistor D1138

    Abstract: D1138 D1138 transistor KS51840 mov k30 Samsung tv remote control circuit diagram KS51850 D4 samsung tv remote control diagram circuit sony k58 SMCS-51
    Text: Product Overview Address Spaces Addressing Modes Memory Map SMCS51 Instruction Set KS51840 1 KS51840 OVERVIEW KS51840, a 4-bit single-chip CMOS microcontroller, consists of the reliable SMCS-51 CPU core with on-chip ROM and RAM. Eight input pins and 11 output pins provide the flexibility for various I/O requirements. Auto reset


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    PDF SMCS51 KS51840 KS51840, SMCS-51 KS51840 1072/fxx 0800h 0900h transistor D1138 D1138 D1138 transistor mov k30 Samsung tv remote control circuit diagram KS51850 D4 samsung tv remote control diagram circuit sony k58

    557-102

    Abstract: Motorola 581 MRF917T1 h a 431 transistor mrf917 SF-11N S212 transistor w 431 Sot323 MRF917T1
    Text: MOTOROLA Order this document from RF Marketing SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF917T1 NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front end amplifiers, at frequencies to 1.5 GHz. Specifically aimed at portable communication devices


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    PDF MRF917T1 70/SOT MRF917T1/D* MRF917T1/D 557-102 Motorola 581 MRF917T1 h a 431 transistor mrf917 SF-11N S212 transistor w 431 Sot323 MRF917T1

    D560 transistor

    Abstract: nec D560 transistor transistor d560 transistor D1138 KS51850 KS51850 D4 Samsung tv remote control circuit diagram d1138 transistor d560 nec nec D560
    Text: 51850 2 KS51850 OVERVIEW KS51850, a 4-bit single-chip CMOS microcontroller, consists of the reliable SMCS-51 CPU core with on-chip ROM and RAM. Eight input pins and 11 output pins provide the flexibility for various I/O requirements. Auto reset circuit generates reset pulse every certain period, and every halt mode termination time. The KS51850


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    PDF KS51850 KS51850, SMCS-51 KS51850 fxx/12 0800h 0900h 0a00h D560 transistor nec D560 transistor transistor d560 transistor D1138 KS51850 D4 Samsung tv remote control circuit diagram d1138 transistor d560 nec nec D560

    MRF917T1

    Abstract: mrf917 S212 HP11590
    Text: MOTOROLA The RF Small Signal Line MRF917T1 NPN Silicon High-Frequency Transistors LOW NOISE HIGH FREQUENCY TRANSISTOR CASE 419–02, STYLE 3 SC–70/SOT–323 MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating VCEO 12 Vdc Collector–Base Voltage


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    PDF MRF917T1 70/SOT MRF917T1 mrf917 S212 HP11590

    MRF917T1

    Abstract: Sot323 MRF917T1
    Text: MOTOROLA Order this document by MRF917T1/D SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF917T1 NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front end amplifiers, at frequencies to 1.5 GHz. Specifically aimed at portable communication devices


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    PDF MRF917T1/D MRF917T1 70/SOT MRF917T1 MRF917T1/D Sot323 MRF917T1

    PD-232

    Abstract: HER307 Motorola 581 MRF577 motorola 549 diode SF-11N MRF577T1 S212
    Text: MOTOROLA Order this document by MRF577T1/D SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF577T1 NPN Silicon High-Frequency Transistor Designed for low noise, wide dynamic range front end amplifiers at frequencies to 1.5 GHz. Specifically aimed at portable communication devices


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    PDF MRF577T1/D MRF577T1 70/SOT PD-232 HER307 Motorola 581 MRF577 motorola 549 diode SF-11N MRF577T1 S212

    HP11608A

    Abstract: MRF0211LT1 MRF5711LT1 S212
    Text: MOTOROLA Order this document by MRF0211LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF0211LT1 . . . designed primarily for use in the high–gain, low–noise small–signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast


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    PDF MRF0211LT1/D MRF0211LT1 MRF5711LT1 MRF0211LT1/D* HP11608A MRF0211LT1 MRF5711LT1 S212

    MRF927

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF927T1/D SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF927T1 NPN Silicon Low Voltage, MRF927T3 Low Current, Low Noise, High-Frequency Transistors IC = 10 mA LOW NOISE HIGH FREQUENCY TRANSISTOR Designed for use in low voltage, low current applications at frequencies to


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    PDF MRF927T1/D MRF927T1 MRF927T3 MRF927T3 MRF927T1/D MRF927

    MRF927

    Abstract: MRF927T1 S212 HP11590B
    Text: MOTOROLA Order this document by MRF927T1/D SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF927T1 NPN Silicon Low Voltage, Low Current, Low Noise, High-Frequency Transistors IC = 10 mA LOW NOISE HIGH FREQUENCY TRANSISTOR Designed for use in low voltage, low current applications at frequencies to


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    PDF MRF927T1/D MRF927T1 MRF927T1/D* MRF927 MRF927T1 S212 HP11590B

    MRF927T1 equivalent

    Abstract: Motorola 581 741 datasheet motorola MRF927 MRF927T1 MRF927T3 S212 3019 npn transistor
    Text: MOTOROLA Order this document by MRF927T1/D SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF927T1 NPN Silicon Low Voltage, MRF927T3 Low Current, Low Noise, High-Frequency Transistors IC = 10 mA LOW NOISE HIGH FREQUENCY TRANSISTOR Designed for use in low voltage, low current applications at frequencies to


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    PDF MRF927T1/D MRF927T1 MRF927T3 MRF927T1 MRF927T1 equivalent Motorola 581 741 datasheet motorola MRF927 MRF927T3 S212 3019 npn transistor

    Funkamateur

    Abstract: SF128 sf126 SSY20 SU161 SF136 SF137 sf359 132 gd 120 sf358
    Text: Funkam ateur-Tabeilen Halbleiter-Bauelemente aus der DDR-Produktion 1980 Typ P« mW [W] UcBO V U ceO Ic [ U c e r ] mA V [A] hin Bei UCE und Ic mA V [A] MHz Silizium-NF-Transistoren 200 SC 206 SC 207 200 sc 236 200 sc 237 200 200 sc 238 sc 239 200 Silizium-HF-Transistoren


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    PDF il21E Funkamateur SF128 sf126 SSY20 SU161 SF136 SF137 sf359 132 gd 120 sf358

    GY 123

    Abstract: SY 170 gd 241 c gd241c funkamateur sy 166 sy 164 VSF203 VSF200 SF 127
    Text: Preisliste für Halbleiterbauelemente gültig ab 18. November 1969 Type EVP alt M ark EVP neu M ark Germanium- und Silizium-Gleichrichter GY 099 GY 100 GY 101 GY 102 GY 103 GY 104 GY 105 GY 109 GY 110 GY 111 GY 112 GY 113 GY 114 GY 115 GY 120 GY 121 GY 122


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    PDF GAZ14 GY 123 SY 170 gd 241 c gd241c funkamateur sy 166 sy 164 VSF203 VSF200 SF 127

    SSY20

    Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
    Text: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen­ Vorzugs­ anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3


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    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


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    24 LC 0261

    Abstract: MRF927 42497 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF927T1 M RF927T3 NPN Silicon Low Voltage, Low Current, Low Noise, H igh-Frequency Transistors lc = 10mA LOW NOISE HIGH FREQUENCY TRANSISTOR Designed for use in low voltage, low current applications at frequencies to


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    PDF SC-70) MRF927T1 RF927T3 0E-15 0E-12 38E-9 MRF927 SC-70 24 LC 0261 42497 transistor

    MMBR951L

    Abstract: BR951L MRF951 mrf9511l
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF951 M M BR951L M RF9511L The RF Line NPN Silicon Low Noise, High-Frequency Transistors Iq = 100 mA LOW NOISE HIGH FREQUENCY TRANSISTORS . . . d e sig ned for u se in high gain, lo w n o ise sm all-signal am p lifiers. This series features


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    PDF MRF951 BR951L RF9511L MRF951 MMBR951L mrf9511l

    transistor vergleichsliste

    Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
    Text: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G


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    MP21E

    Abstract: sowjetische transistoren MP21D UdSSR KT904 ASZ16 KT315 OC1072 Transistoren DDR asz1015
    Text: electronic Sowjetische Transistoren I n h a l t s v e r z e i c h n i s V o rw o rt K u rz c h a ra lc te rls tlk - G e rm a n iu n tra n s is to re n - S illz lu m tra n s ito re n S t a a t l i c h e r S ta n d a r d d e s S y ste m s f ü r d i e B e z e ic h n u n g d e r H a l b l e i t e r b a u e l e u e n t e d e r UdSSR


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    fy sot 143

    Abstract: Transistor motorola 513 TO-126 MMBR521 MMBR521L CASE318-07 MMBR521LT1 MRF521 MRF5211 MRF5211LT1 TO-236AA
    Text: HOTOROLA SC XSTRS/R F bTE b3b72SH T> G100147 SSk «nOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBR 5 2 1 LT 1 * MRF 521 MRF 5 2 1 1 LT 1 The RF Line PNP Silicon High-Frequency Transistor •Motorola P r r t T f d D«vtce Designed primarily for use in the high-gain, low-noise small-signal amplifiers


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    PDF b3b725H G100147 110Tb MMBR521LT1) MRF521, MRF5211LT1) OT-23 fy sot 143 Transistor motorola 513 TO-126 MMBR521 MMBR521L CASE318-07 MMBR521LT1 MRF521 MRF5211 MRF5211LT1 TO-236AA

    MMBR951L

    Abstract: MRF9511LT1 MRF951 sot-23 marking 7z NF 028
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF951 M M BR951LT1 M M BR951ALT1 M RF9511LT1 The RF Line NPN Silicon Low N oise, H igh-Frequency Transistors Iq = 100 mA LOW NOISE HIGH-FREQUENCY TRANSISTORS . . . designed for use in high gain, low noise small-signal amplifiers. This series


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    PDF MRF951 BR951LT1 BR951ALT1 RF9511LT1 MRF951 OT-23 MMBR951LT1, MMBR951ALT1 OT-143 MRF9511LT1 MMBR951L sot-23 marking 7z NF 028

    Halbleiterbauelemente DDR

    Abstract: Dioden SY 250 diode sy-250 B250C135 u103d GD244 transistor gc 301 SAM42 diode sy 166 D172C
    Text: electronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz-und Kenndaten der in der DDR getertigten Halbleiterbauelemente. Die Kennwerte werden im allgemeinen für eine Umgebungs­ temperatur von 25 °C angegeben.


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    PDF 6x10x12 Halbleiterbauelemente DDR Dioden SY 250 diode sy-250 B250C135 u103d GD244 transistor gc 301 SAM42 diode sy 166 D172C

    1BW TRANSISTOR

    Abstract: No abstract text available
    Text: 7=3 9 -3 / F 6 - 25 R 06 KF E UP EC SEE m ]> G G G G 272 Sf lf l «UPEC J Thermische Eigenschaften Thermal properties DC, pro Baustein /per module 0,21 °C/W ' RthJC DC, pro Zweig / per arm 1,25 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties


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    PDF GGGG272 34D32CI7 1BW TRANSISTOR

    sf 1327

    Abstract: tuner LG sf 118 c mmbr521lt1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line PNP Silicon H igh-Frequency Transistor MMBR521LT1 MRF5211LT1 Designed prim arily for use in the h ig h -g a in , lo w -n o ise s m a ll-sig n a l amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast


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    PDF MMBR521LT1) MRF5211LT1) OT-23 OT-143 MRF5211LT1 MMBR521LT1 sf 1327 tuner LG sf 118 c