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SEMIKRON SEMIX101GD12E4S Igbt Module, Six, 1.2Kv, 160A; Continuous Collector Current:160A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes \|Semikron SEMIX101GD12E4S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SEMIX101GD12E4S	Bulk			4	1 $154.95 10 $146.57 100 $134.01 1000 $134.01 10000 $134.01	Buy Now
SEMIKRON SEMIX101GD12E4S 27890195 Module: IGBT; transistor/transistor; IGBT three-phase bridge
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SEMIX101GD12E4S 27890195				1	1 $489.76 10 $361.26 100 $334.93 1000 $334.93 10000 $334.93	Get Quote

SEMIX101GD12E4S Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SEMiX101GD12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 160 A Tc = 80 °C 123 A 100 A ICnom ICRM SEMiX 13 Trench IGBT Modules SEMiX101GD12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V	Original	PDF	SEMiX101GD12E4s E63532
SEMIX101GD12E4S Abstract: semikron cs Text: SEMiX101GD12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 160 A Tc = 80 °C 123 A 100 A ICnom ICRM SEMiX 13 Trench IGBT Modules ICRM = 3xICnom 300 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	PDF	SEMiX101GD12E4s E63532 SEMIX101GD12E4S semikron cs
SEMIX101GD12E4S Abstract: No abstract text available Text: SEMiX101GD12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 160 A Tc = 80 °C 123 A 100 A ICnom ICRM SEMiX 13 Trench IGBT Modules ICRM = 3xICnom 300 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	PDF	SEMiX101GD12E4s E63532 SEMIX101GD12E4S
Untitled Abstract: No abstract text available Text: SEMiX101GD12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 160 A Tc = 80 °C 123 A 100 A ICnom ICRM SEMiX 13 Trench IGBT Modules ICRM = 3xICnom 300 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	PDF	SEMiX101GD12E4s E63532 ApplicMiX101GD12E4s
SEMIX353GB126V1 Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots	Original	PDF	SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1