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    SEMIWELL SEMICONDUCTOR Search Results

    SEMIWELL SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SEMIWELL SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SemiWell Semiconductor

    Abstract: P16M40CT semiwell
    Text: PROVISIONAL P16M40CT SemiWell Semiconductor 16A Schottky Barrier Rectifier Symbol Features b : 1! Plastic material meets UL94V-0 Metal silicon junction Very low forward voltage drop High current / High surge capability Guarding for over voltage protection


    Original     		PDF P16M40CT UL94V-0 MIL-STD202 O-220 P16M40CT 50mVP-P SemiWell Semiconductor semiwell

    LOW FORWARD VOLTAGE DROP DIODE RECTIFIER

    Abstract: F16M40CT
    Text: PROVISIONAL F16M40CT SemiWell Semiconductor 16A Schottky Barrier Rectifier Symbol Features b : 1! Plastic material meets UL94V-0 Metal silicon junction Very low forward voltage drop High current / High surge capability Guarding for over voltage protection


    Original     		PDF F16M40CT UL94V-0 MIL-STD202 O-220F F16M40CT 50mVP-P LOW FORWARD VOLTAGE DROP DIODE RECTIFIER

    P20M40CT

    Abstract: 20A SCHOTTKY BARRIER RECTIFIER
    Text: PROVISIONAL P20M40CT SemiWell Semiconductor 20A Schottky Barrier Rectifier Symbol Features b : 1! Plastic material meets UL94V-0 Metal silicon junction Very low forward voltage drop High current / High surge capability Guarding for over voltage protection


    Original     		PDF P20M40CT UL94V-0 MIL-STD202 O-220 P20M40CT 50mVP-P 20A SCHOTTKY BARRIER RECTIFIER

    LOW FORWARD VOLTAGE DROP DIODE RECTIFIER

    Abstract: LOW DROP POWER SCHOTTKY RECTIFIER F20M40CT SemiWell Semiconductor
    Text: PROVISIONAL F20M40CT SemiWell Semiconductor 20A Schottky Barrier Rectifier Symbol Features b : 1! Plastic material meets UL94V-0 Metal silicon junction Very low forward voltage drop High current / High surge capability Guarding for over voltage protection


    Original     		PDF F20M40CT UL94V-0 MIL-STD202 O-220F F20M40CT 50mVP-P LOW FORWARD VOLTAGE DROP DIODE RECTIFIER LOW DROP POWER SCHOTTKY RECTIFIER SemiWell Semiconductor

    SemiWell Semiconductor

    Abstract: W30M40CT
    Text: PROVISIONAL W30M40CT SemiWell Semiconductor 30A Schottky Barrier Rectifier Symbol Features b : 1! Plastic material meets UL94V-0 Metal silicon junction Very low forward voltage drop High current / High surge capability Guarding for over voltage protection


    Original     		PDF W30M40CT UL94V-0 MIL-STD202 O-247 W30M40CT Maximum10 50mVP-P SemiWell Semiconductor

    P10M40CT

    Abstract: No abstract text available
    Text: PROVISIONAL P10M40CT SemiWell Semiconductor 10A Schottky Barrier Rectifier Symbol Features b : 1! Plastic material meets UL94V-0 Metal silicon junction Very low forward voltage drop High current / High surge capability Guarding for over voltage protection


    Original     		PDF P10M40CT UL94V-0 MIL-STD202 O-220 P10M40CT Maximu75-

    di 437

    Abstract: SDW80S600 c150 diode
    Text: SDW80S600 SemiWell Semiconductor Fast Soft Recovery Rectifier Diode Features IFAVM = 80A VRRM = 600V = 65ns trr Plastic material meets UL94V-0 ◆ Glass passivated chips ◆ Very short recovery time ◆ Extremely low switching loss ◆ Soft recovery behavior


    Original     		PDF SDW80S600 UL94V-0 247AD SDW80S600 O-247 di 437 c150 diode

    SFP730

    Abstract: No abstract text available
    Text: SFP730 SemiWell Semiconductor SanRex manufactured N-Channel MOSFET Features Symbol • RDS on (Max 1 Ω )@VGS=10V ■ Gate Charge (Typical 32nC) Improved dv/dt Capability, High ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)


    Original     		PDF SFP730 O-220 O-220 SFP730

    SemiWell Semiconductor

    Abstract: 82c80 K 1603 SDW80S600 0084L semiwell
    Text: Preliminary SDW80S600 SemiWell Semiconductor Fast Soft Recovery Rectifier DIode Features IFAVM = 80A VRRM = 600V = 65ns trr Plastic material meets UL94V-0 ◆ Glass passivated chips ◆ Very short recovery time ◆ Extremely low switching loss ◆ Soft recovery behaviour


    Original     		PDF SDW80S600 UL94V-0 247AD SDW80S600 -50A/us O-247 SemiWell Semiconductor 82c80 K 1603 0084L semiwell

    110uH

    Abstract: SFP45N03L
    Text: SFP45N03L SemiWell Semiconductor Logic N-Channel MOSFET Features Symbol • Low RDS on (0.018Ω )@VGS=10V ■ Low Gate Charge (Typical 17.5nC) Low Crss (Typical 110pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C)


    Original     		PDF SFP45N03L 110pF) O-220 110uH SFP45N03L

    SFP640

    Abstract: No abstract text available
    Text: SFP640 SemiWell Semiconductor N-Channel MOSFET Features RDS on (Max 0.18 Ω )@VGS=10V • Gate Charge (Typical 45nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) ■ ■ ■ 2. Drain { Symbol


    Original     		PDF SFP640 O-220 O-220 SFP640

    bta12 speed control application

    Abstract: bta12-600b application BTA12-600B TEST BTA12-600B BTA12-600B equivalent bta12 phase control application BTA12 600V BTA12 600B BTA12 600B MAR BTA12
    Text: Preliminary BTA12-600B SemiWell Semiconductor UL : E228720 Bi-Directional Triode Thyristor Symbol ○ Features ▼▲ Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current IT(RMS = 12 A ) ◆ High Commutation dv/dt ◆ Isolation Voltage ( VISO = 1500V AC )


    Original     		PDF BTA12-600B E228720 O-220F O-220F bta12 speed control application bta12-600b application BTA12-600B TEST BTA12-600B BTA12-600B equivalent bta12 phase control application BTA12 600V BTA12 600B BTA12 600B MAR BTA12

    SFD60N03L

    Abstract: No abstract text available
    Text: PRELIMINARY SFD60N03L SemiWell Semiconductor Logic N-Channel MOSFET Features Symbol • Low RDS on (0.019Ω )@VGS=10V ■ Low Gate Charge (Typical 21.5nC) Low Crss (Typical 130pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (150°C)


    Original     		PDF SFD60N03L 130pF) SFD60N03L

    2 speed fan control relay unit

    Abstract: BT139F-600 t2 955 e
    Text: Preliminary BT139F-600 SemiWell Semiconductor UL : E228720 Bi-Directional Triode Thyristor Symbol ○ Features ▼▲ Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current IT(RMS = 16 A ) ◆ High Commutation dv/dt ◆ Isolation Voltage ( VISO = 1500V AC )


    Original     		PDF BT139F-600 E228720 50Hz/60H O-220F 2 speed fan control relay unit BT139F-600 t2 955 e

    SFB95N03L

    Abstract: No abstract text available
    Text: SFB95N03L SemiWell Semiconductor Logic N-Channel MOSFET Features Symbol • Low RDS on (0.0085Ω )@VGS=10V ■ Low Gate Charge (Typical 39nC) Low Crss (Typical 185pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C)


    Original     		PDF SFB95N03L 185pF) SFB95N03L

    STF25A60

    Abstract: No abstract text available
    Text: STF25A60 SemiWell Semiconductor UL : E228720 Bi-Directional Triode Thyristor Symbol ○ Features 2.T2 ▼▲ Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current IT(RMS = 25 A ) ◆ High Commutation dv/dt ◆ Isolation Voltage ( VISO = 1500V AC )


    Original     		PDF STF25A60 E228720 O-220F O-220F STF25A60

    U2N60

    Abstract: 30V 20A power p MOSFET
    Text: SFD/U2N60 SemiWell Semiconductor N-Channel MOSFET Features RDS on (Max 5.0 Ω )@VGS=10V • Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) ■ ■ ■ 2. Drain { Symbol


    Original     		PDF SFD/U2N60 30TYP U2N60 30V 20A power p MOSFET

    SFP45N03L

    Abstract: sfp45n03
    Text: PRELIMINARY SFP45N03L SemiWell Semiconductor Logic N-Channel MOSFET Features Symbol • Low RDS on (0.018Ω )@VGS=10V ■ Low Gate Charge (Typical 17.5nC) Low Crss (Typical 110pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C)


    Original     		PDF SFP45N03L 110pF) O-220 SFP45N03L sfp45n03

    SBP13007-H1

    Abstract: SBP13
    Text: SemiWell Semiconductor SBP13007- H1 High Voltage Fast-Switching NPN Power Transistor Features Symbol ○ 1.Base 2.Collector ○ c - Very High Switching Speed Typical [email protected] - Minimum Lot-to-Lot hFE Variation - Short storge time - Wide Reverse Bias S.O.A


    Original     		PDF SBP13007- O-220 SBP13007-H1 O-220 SBP13007-H1 SBP13

    SFP60N03L

    Abstract: No abstract text available
    Text: PRELIMINARY SFP60N03L SemiWell Semiconductor Logic N-Channel MOSFET Features Symbol • Low RDS on (0.0135Ω )@VGS=10V ■ Low Gate Charge (Typical 21.5nC) Low Crss (Typical 130pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C)


    Original     		PDF SFP60N03L 130pF) O-220 SFP60N03L

    SFP95N03L

    Abstract: No abstract text available
    Text: PRELIMINARY SFP95N03L SemiWell Semiconductor Logic N-Channel MOSFET Features Symbol • Low RDS on (0.0085Ω )@VGS=10V ■ Low Gate Charge (Typical 39nC) Low Crss (Typical 185pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C)


    Original     		PDF SFP95N03L 185pF) O-220 SFP95N03L

    SFP70N06

    Abstract: No abstract text available
    Text: PRELIMINARY SFP70N06 SemiWell Semiconductor N-Channel MOSFET Features Symbol • Low RDS on (0.014Ω )@VGS=10V ■ Low Gate Charge (Typical 70nC) Low Crss (Typical 160pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C)


    Original     		PDF SFP70N06 160pF) O-220 SFP70N06

    SFH054

    Abstract: 10VGS TL 0621 P
    Text: PRELIMINARY SFH054 SemiWell Semiconductor N-Channel MOSFET Features Symbol • Low RDS on (0.014Ω )@VGS=10V ■ Low Gate Charge (Typical 70nC) Low Crss (Typical 160pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C)


    Original     		PDF SFH054 160pF) battH054 O-247 SFH054 10VGS TL 0621 P

    SFP50N06

    Abstract: SFP50
    Text: SFP50N06 SemiWell Semiconductor N-Channel MOSFET Features Symbol • Low RDS on (0.023 Ω )@VGS=10V ■ Low Gate Charge (Typical 39nC) Low Crss (Typical 110pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C) ■


    Original     		PDF SFP50N06 110pF) O-220 SFP50N06 SFP50