Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SEMICONDUCTOR 4645 H Search Results

    SEMICONDUCTOR 4645 H Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SEMICONDUCTOR 4645 H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD120017 SHD120017P TECHNICAL DATA DATA SHEET 4645, REV. - HERMETIC SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Features: • • • • • • Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop


    Original
    PDF SHD120017 SHD120017P

    EN4645

    Abstract: 2SK1890
    Text: Ordering number:EN4645 N-Channel Silicon MOSFET 2SK1890 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2090A [2SK1890] 10.2 4.5 3 1.2 2.55 0 to 0.3 0.4 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 2.7 2.55 2 1.35 1 0.8 2.55 Specifications


    Original
    PDF EN4645 2SK1890 2SK1890] 2SK1890-applied EN4645 2SK1890

    VCO190-2200AT

    Abstract: cdi schematics pcb dc cdi schematic diagram VARI-L VCO PLL 5 ghz VCO690-4790T VCO190-2200 Header, 10-Pin
    Text: LMX2434SLE EVALUATION BOARD OPERATING INSTRUCTIONS National Semiconductor Corporation Wireless Communications, RF Products Group 2900 Semiconductor Dr. M/S E-170 Santa Clara, CA, 95052-8090 LMX2434SLEFPEBI Rev 05.12.06 LMX2434SLE EVALUATION BOARD OPERATING INSTRUCTIONS


    Original
    PDF LMX2434SLE E-170 LMX2434SLEFPEBI LMX2434SLE LMX2434SLE, 10-Pin LMX2434SLEFPEB VCO190-2200AT cdi schematics pcb dc cdi schematic diagram VARI-L VCO PLL 5 ghz VCO690-4790T VCO190-2200 Header, 10-Pin

    Untitled

    Abstract: No abstract text available
    Text: FDP083N15A N-Channel PowerTrench MOSFET 150 V, 117 A, 8.3 mΩ Features Description • RDS on = 6.85 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior


    Original
    PDF FDP083N15A

    F102 equivalent

    Abstract: No abstract text available
    Text: FDP083N15A _F102 N-Channel PowerTrench MOSFET 150 V, 117 A, 8.3 mΩ Features Description • RDS on = 6.85 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original
    PDF FDP083N15A FDP083N15A F102 equivalent

    Untitled

    Abstract: No abstract text available
    Text: FDP083N15A_F102 N-Channel PowerTrench MOSFET 150V, 105A, 8.3mW Features Description • RDS on = 6.85mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original
    PDF FDP083N15A

    Untitled

    Abstract: No abstract text available
    Text: FDB082N15A N-Channel PowerTrench MOSFET 150V, 105A, 8.2mW Features Description • RDS on = 6.7mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original
    PDF FDB082N15A FDB082N15A

    Untitled

    Abstract: No abstract text available
    Text: FDP083N15A_F102 N-Channel PowerTrench MOSFET 150V, 105A, 8.3mΩ Features Description • RDS on = 6.85mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original
    PDF FDP083N15A

    FDB082N15A

    Abstract: FDB08
    Text: FDB082N15A N-Channel PowerTrench MOSFET 150V, 105A, 8.2mΩ Features Description • RDS on = 6.7mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original
    PDF FDB082N15A FDB082N15A FDB08

    Untitled

    Abstract: No abstract text available
    Text: FDB082N15A N-Channel PowerTrench MOSFET 150 V, 117 A, 8.2 mΩ Features Description • RDS on = 6.7 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original
    PDF FDB082N15A FDB082N15A

    FDP083N15A

    Abstract: No abstract text available
    Text: FDP083N15A N-Channel PowerTrench MOSFET 150 V, 117 A, 8.3 mΩ Features Description • RDS on = 6.85 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior


    Original
    PDF FDP083N15A FDP083N15A

    Untitled

    Abstract: No abstract text available
    Text: FDB082N15A N-Channel PowerTrench MOSFET 150 V, 117 A, 8.2 mΩ Features Description • RDS on = 6.7 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original
    PDF FDB082N15A

    2217-33

    Abstract: 33N capacitor TLV2217-33 TLV2217-33KC TLV2217-33N TLV2217-33PWLE TLV2217-33Y
    Text: TLV2217-33, TLV2217-33Y LOW-DROPOUT 3.3-V FIXED VOLTAGE REGULATORS SLVS067B – MARCH 1992 – REVISED OCTOBER 1995 • • • • • • • • Fixed 3.3-V Output ± 1% Maximum Output Voltage Tolerance at TJ = 25°C 500 - mV Maximum Dropout Voltage at


    Original
    PDF TLV2217-33, TLV2217-33Y SLVS067B 500-mA TLV2217-33 2217-33 33N capacitor TLV2217-33KC TLV2217-33N TLV2217-33PWLE TLV2217-33Y

    AS7C1024

    Abstract: AL205 AS7C31024 IN317
    Text: Hi gh Per for m an ce 128K 128 K x8 C M OS S R A M A S 7C1024 A S 7C31024 1288K ×8 CMOS S R A M 12 Features • Organization: 131,072 words × 8 bits • High speed - 10/12/15/20 ns address access time - 3/3/4/5 ns output enable access time • Low power consumption


    Original
    PDF 7C1024 7C31024 32-pin 7C512 AS7C1024 AL205 AS7C31024 IN317

    tape 5925f 3M

    Abstract: in 4754 3M 0,4 mm 74648 sensor 3414 ZHR-4 HTG3500 HPC106-0 HTG3400 57E-11 52956
    Text: HTG3400 Series Compliant with RoHS regulations RELATIVE HUMIDITY AND TEMPERATURE MODULE Based on the rugged HUMIREL humidity sensor, the HTG3400 series are dedicated humidity and temperature plug and play transducers designed for OEM applications where reliable and accurate measurements are needed. Direct interface


    Original
    PDF HTG3400 HPC124 tape 5925f 3M in 4754 3M 0,4 mm 74648 sensor 3414 ZHR-4 HTG3500 HPC106-0 57E-11 52956

    CLL040-1818A1-273M1A2

    Abstract: No abstract text available
    Text: DATA SHEET CLL040-1818A1-273M1A2 and are trademarks or registered trademarks of CITIZEN HOLDINGS CO., LTD. JAPAN. is a trademark or a registered trademark of CITIZEN ELECTRONICS CO., LTD. JAPAN. Ref.CE-P1888 02/12 R1 0612 DATA SHEET 1/11 1. Scope of Application


    Original
    PDF CLL040-1818A1-273M1A2 CE-P1888 CLL040-1818A1-273M1A2. CLL040-1818A1-273M1A2

    10sx1130g

    Abstract: MC10SX1130 MC10SX1130D MC10SX1130DG ma3830
    Text: MC10SX1130 LED Driver Description The MC10SX1130 is high speed LED Driver/current switch specifically targeted for use in FDDI PMD and ANSI X3T9.3 FibreChannel 266 Mbits/s optical transmitters. The integrated circuit contains several unique functional blocks which makes it easily


    Original
    PDF MC10SX1130 MC10SX1130 MC10SX1130/D 10sx1130g MC10SX1130D MC10SX1130DG ma3830

    10SX1130

    Abstract: MC10SX1130 MC10SX1130D MC10SX1130DR2
    Text: MC10SX1130 LED Driver The MC10SX1130 is high speed LED Driver/current switch specifically targeted for use in FDDI PMD and ANSI X3T9.3 FibreChannel 266 Mbits/s optical transmitters. The integrated circuit contains several unique functional blocks which makes it easily


    Original
    PDF MC10SX1130 MC10SX1130 MC10SX1130/D 10SX1130 MC10SX1130D MC10SX1130DR2

    Untitled

    Abstract: No abstract text available
    Text: MC10SX1130 LED Driver Description The MC10SX1130 is high speed LED Driver/current switch specifically targeted for use in FDDI PMD and ANSI X3T9.3 FibreChannel 266 Mbits/s optical transmitters. The integrated circuit contains several unique functional blocks which makes it easily


    Original
    PDF MC10SX1130 MC10SX1130 MC10SX1130/D

    CY7C131

    Abstract: CY7C130 CY7C140 CY7C141 IDT7130 IDT7140 C1303 C1307
    Text: CY7C130/CY7C131 CY7C140/CY7C141 1K x 8 DualĆPort Static RAM D Features D D D D speed/power Functional Description Automatic powerĆdown The CY7C130/CY7C131/CY7C140 and CY7C141 are highĆspeed CMOS 1K by 8 dualĆport static RAMs. Two ports are proĆ vided permitting independent access to


    Original
    PDF CY7C130/CY7C131 CY7C140/CY7C141 IDT7130 IDT7140 CY7C130/CY7C131/CY7C140 CY7C141 CY7C130/ CY7C131 CY7C140/CY7C141 16bit CY7C130 CY7C140 IDT7140 C1303 C1307

    CY7C130

    Abstract: CY7C131 CY7C140 CY7C141 IDT7130 IDT7140 C1303 C1307
    Text: CY7C130/CY7C131 CY7C140/CY7C141 1K x 8 DualĆPort Static RAM D Features D D D D speed/power Functional Description Automatic powerĆdown The CY7C130/CY7C131/CY7C140 and CY7C141 are highĆspeed CMOS 1K by 8 dualĆport static RAMs. Two ports are proĆ vided permitting independent access to


    Original
    PDF CY7C130/CY7C131 CY7C140/CY7C141 IDT7130 IDT7140 CY7C130/CY7C131/CY7C140 CY7C141 CY7C130/ CY7C131 CY7C140/CY7C141 16bit CY7C130 CY7C140 IDT7140 C1303 C1307

    AC Voltage comparator circuit diagram using LM339

    Abstract: pin configuration of ic LM339 Using lm339n, AC Voltage comparator circuit diagram LM2904 equivalent 14pin ic 339A MC3302 LM139 LM139F LM239AN LM339 equivalent
    Text: INTEGRATED CIRCUITS LM139/239/239A/339/339A/LM2901/MC 3302 Quad voltage comparator Product specification IC11 Data Handbook Philips Semiconductors 1995 Nov 27 Philips Semiconductors Product specification LM139/239/239A/339/339A /LM2901/MC3302 Quad voltage comparator


    Original
    PDF LM139/239/239A/339/339A/LM2901/MC LM139/239/239A/339/339A /LM2901/MC3302 LM139 LM2904 AC Voltage comparator circuit diagram using LM339 pin configuration of ic LM339 Using lm339n, AC Voltage comparator circuit diagram LM2904 equivalent 14pin ic 339A MC3302 LM139F LM239AN LM339 equivalent

    CY7C130

    Abstract: CY7C131 CY7C140 CY7C141
    Text: CY7C130/CY7C131 CY7C140/CY7C141 1K x 8 Dual-Port Static RAM Features Functional Description • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 1K x 8 organization • 0.65-micron CMOS for optimum speed/power • High-speed access: 15 ns


    Original
    PDF CY7C130/CY7C131 CY7C140/CY7C141 65-micron CY7C130/CY7C131 CY7C130/CY7C131; 48-pin CY7C130/140) 52-pin CY7C130 CY7C131 CY7C140 CY7C141

    BD561

    Abstract: No abstract text available
    Text: HI5630 Semiconductor March 1999 Data Sheet Triple 8-Bit, 80MSPS A/D Converter with Internal Voltage Reference T he H I5630 is a m onolithic, triple 8-B it, 8 0 M S P S File Number 4645 Features • Triple 8-B it A /D C o nve rte r on a M o n o lith ic Chip


    OCR Scan
    PDF HI5630 80MSPS I5630 5M-1982. BD561