SEMELAB LATERAL MOSFETS Search Results

SEMELAB LATERAL MOSFETS Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

SEMELAB LATERAL MOSFETS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BZX85C12V Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes	Original	DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E	PDF
STK412-750 Abstract: STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870 Text: Designed & produced by Triad. www.triad.uk.com Semelab Limited Coventry Road, Lutterworth Leicestershire LE17 4JB, UK Telephone: +44 0 1455 552505 Facsimile: +44 (0)1455 552612 Email: [email protected] Website: www.magnatec-tt.com A subsidiary of TT electronics plc	Original	SELT2WA10C SELT2WC10C SELT2WD10C SELT2WE10C SELT2WF10C SELT2WH10C SELT2WJ10C SELT2WK10C SELT2WA13C SELT2WC13C STK412-750 STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870	PDF
til 701 Abstract: photodiode die WAFER MAGNATEC LATERAL MOSFET magnatec mosfets depletion mode mosfet 100 MHz semefab Power MOSFET Wafer pps 501 semelab mosfet lateral Text: til// 'rr* 'WWr Semefab SILICON DESIGN — WAFER FABRICATION SEMEFAB SCOTLAND LTD. is the Group's wafer fabrication facility based in Glenrothes, Fife. Located adjacent to Compugraphics, Europe's largest independent mask manufacturer, SEMEFAB has a capacity of	OCR Scan	100mm 10OOnm til 701 photodiode die WAFER MAGNATEC LATERAL MOSFET magnatec mosfets depletion mode mosfet 100 MHz semefab Power MOSFET Wafer pps 501 semelab mosfet lateral	PDF
mosfet 500 watts audio amplifier Abstract: lateral mosfet audio amplifier 500 watts audio amplifier diagram audio lateral Mosfet IDI TRANSISTORS igbt power audio amplifier semelab lateral mosfets Text: im E tti IDI Sem elab Power Management Division “SMARTPACK” POWER MODULES A versatile, cost efficient approach to Power Modules for Commercial, Professional and Industrial applications. A modular, but customisable lead frame along with 4 standard package outlines give great flexibility to the	OCR Scan		PDF
HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D Text: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED	OCR Scan	BUZ905D BUZ906D -100mA -160V -200V HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D	PDF