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    LEDIL CA15902_VERONICA-SQ-SE

    LENS CLEAR 189DEG ADHESIVE TAPE
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    DigiKey CA15902_VERONICA-SQ-SE Bag 2,034 1
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    LEDIL CA15231_VERONICA-SQ-MINI-W

    LENS CLEAR 56DEG WIDE ADH TAPE
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    DigiKey CA15231_VERONICA-SQ-MINI-W Tray 1,396 1
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    TME CA15231_VERONICA-SQ-MINI-W 1
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    LEDIL CA15230_VERONICA-SQ-MINI-M

    LENS CLR 25/34DEG MED ADH TAPE
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    DigiKey CA15230_VERONICA-SQ-MINI-M Tray 1,229 1
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    TME CA15230_VERONICA-SQ-MINI-M 1
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    TT Electronics OPTEK Technology OPB13438-MEDTRONIC

    CUSTOM SLOTTED OPTICAL SWITCH /
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    DigiKey OPB13438-MEDTRONIC Tube 198 1
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    LEDIL C13529_VERONICA-O

    LENS CLEAR ELLIPTICAL/OVAL ADH
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    Newark C13529_VERONICA-O Bulk 112
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    SELECTRONIC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PICSTART-16B

    Abstract: PSIM 6.0 user manual milford serial lcd 16C64 ZIF socket 18pin CONNECTOR 16C71 16C84 PIC16C64 PIC16C71 PIC16C84
    Text: Introduction Thank you for purchasing Parallax PIC development tools. We’ve done our best to ensure that our tools are easy-to-use and complete. As of November, 1994, we offer eight products for PIC development: • PIC16Cxx Assembler • PIC16Cxx Software Simulator


    Original
    PDF PIC16Cxx 8051-like PICSTART-16B PSIM 6.0 user manual milford serial lcd 16C64 ZIF socket 18pin CONNECTOR 16C71 16C84 PIC16C64 PIC16C71 PIC16C84

    SMO-14

    Abstract: SLG 2016 D 2SK26 2N42 N4 TAM 2N425 marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426
    Text: MIL-S-19500A1B EL See Section6 MILITARYSPECIFICATION SEMICONDUCTORDEVICE,TRANSISTOR,PNP, GERMANIUM,SWITCHING TYPSS 2N425,2Nb26, 2N42? 1. SCOPS 131 w.-. This specificationcovers the detail requirementsfor germanium PNP,“transietora for use in low-power switchingapplication


    Original
    PDF MIL-S-19500A1B( 2N425 2Nb26 -AO07 SMO-14 SLG 2016 D 2SK26 2N42 N4 TAM marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426

    bcm 4330

    Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
    Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?


    Original
    PDF

    AEG PS 431 relay manual

    Abstract: AEG PS 431 relay protocol caterpillar cat data link ford eec V relay AEG PS 431 LM304 HD9063 Murphy Controller TTD
    Text: an Enovation Controls Brand an Enovation Controls Brand ECONTROLS, INC 5311 South 122nd East Avenue Tulsa, Oklahoma 74146 USA Phone: +1 918 317 4100 Fax: +1 918 317 4266 E-mail: [email protected] Website: www.fwmurphy.com 5757 Farinon Drive San Antonio, Texas 78249 USA


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    PDF 122nd AEG PS 431 relay manual AEG PS 431 relay protocol caterpillar cat data link ford eec V relay AEG PS 431 LM304 HD9063 Murphy Controller TTD

    Untitled

    Abstract: No abstract text available
    Text: -S? SELECTRONICS AMSUNG K M 6 4 B 1001 262,144 WORD X 4 Bit APRIL 1992 GENERAL DESCRIPTION FEATURES The KM64B1001 is a 1,048,576-bit high­ speed static random access memory organized as 262,144 words by 4 bit. The device is fabricated using Samsung's advanced BiCMOS process and designed for


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    PDF KM64B1001 576-bit 400mil 28-pin KM64B1001P/J-12 170mA KM64B1001P/J-15 150mA 017flbc

    Untitled

    Abstract: No abstract text available
    Text: KM44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 4 C 1 0 0 0 A S L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications


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    PDF KM44C1000ASL 130ns 10OOASL-10 180ns 20-LEAD

    A82c50

    Abstract: No abstract text available
    Text: ASYNCHRONOUS COMMUNICATION ELEMENT KS82C50A DESCRIPTION FEATURES Single C hip UART/BRG DC to 10 MHz Operation DC to 625K Baud Crystal o r External Clock Input On C hip Baud Rate Generator 1 to 65535 Divisor Generates 16x Clock Prioritized Interrupt Mode


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    PDF KS82C50A 82C50A A82c50

    Untitled

    Abstract: No abstract text available
    Text: KM41C16100 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 1 6 1 0 0 is a high speed C M OS 1 6 ,7 7 7 ,2 1 6 X 1 Dynam ic Random A ccess M em ory. Its design is optim ized fo r high perform ance applications


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    PDF KM41C16100 130ns 150ns 24-LEAD

    Untitled

    Abstract: No abstract text available
    Text: SERIAL COMMUNICATION CONTROLLER KS85C30 Preliminary PRODUCTFEATURES PRODUCT OVERVIEW • 6,8, and 10 MHz operation • Low power CMOS • Pin compatible to NMOS versions • High speed-2.5M bit/sec channels • Two independent, full-duplex channels, each with


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    PDF KS85C30 KS85C30 40-Pln

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC MMBTM10 _ 42E D B 7 ^ 4 1 4 2 0GÜT0S3 G H S f l G K NPN EPITAXIAL SILICO N TRANSISTO R VHF/UHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Vcao 30 25 3 350 150 357 V V V mW °C °C/W Collector-Base Voltage


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    PDF MMBTM10 100fiA, 100MHz

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM93CS56/KM93CS66 CMOS EEPROM 2K /4 K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Single 5 volt supply • Write protection with memory pointer • Low power consumption — Active: 3 mA TTL — Standby: 100 pA (TTL)


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    PDF KM93CS56/KM93CS66 KM93CS66 KM93CS56 KM93CS56/66

    Untitled

    Abstract: No abstract text available
    Text: 42E » JH SAMSUNG ELECTRONICS INC KM75C103A 7U_4'1.M2 _00].Ji5bS 3 M S M G K CMOS PROGRAMMABLE FLAG FIFO :%-zs P r o g r a m m a b le - F la g s , 2 K X 9 F IF O FEATURES DESCRIPTION • Flrst-ln-Flrst-Out Dual Port Memory —2 K x 9 Organization • Very High Speed independent of depth/width


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    PDF KM75C103A --30ns 120mA 32-Pin T-46-35

    KM6264BL-10

    Abstract: samsung CMOS SRAM KMM591000 KM75C01 KM75C01AP80 KM75C03AJ-50 KM6264BL7 KM75C01AP-20 KM75C01AP-25 KM75C01AP-80
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAIM »¡SAMSUNG Electronics 11 MEMORY ICs »SElectronics SAMSUNG FUNCTION GUIDE MEMORY ICS sgSAMSUNG Electronics FUNCTION GUIDE 13 MEMORY ICs FUNCTION GUIDE *: N ew Product f: P relim inary P roduct f t : U nder D evelopm ent


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    PDF KMM591000C-6 KMM591000C-7 KMM591000C-8 KMM536256C/CG-7 KMM536256C/CG-8 New80 KM75C03AP-50 KM75C03AN-12 KM75C03AN-15 KM75C03AN-20 KM6264BL-10 samsung CMOS SRAM KMM591000 KM75C01 KM75C01AP80 KM75C03AJ-50 KM6264BL7 KM75C01AP-20 KM75C01AP-25 KM75C01AP-80

    Untitled

    Abstract: No abstract text available
    Text: M AY 2007 - T H IS D R A W IN G B E C A M E T H E P R O P E R T Y OF W IN C H E S T E R E L E C T R O N IC S C O R P O R A T IO N , W ALLIN G FO RD , CT 06492 . IT E M REQ *D 1 * 1 2 D E S C R IP T IO N ^ PART 7 9 5 -1 3 -9 SHEET 2 OF 2 REVI8I0N8 NO.-


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    PDF C-59-228-5-M 1-856-21MA9 795-13L9

    KM44C4000-7

    Abstract: KM44C4000-8 KM44C4000 KM44C4000-6 dram 4mx4 taa 723 304X4
    Text: KM44C4000 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 4 C 4 0 0 0 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random A ccess M em ory. Its design is optim ized fo r high perform ance applications


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    PDF KM44C4000 KM44C4000-6 110ns KM44C4000-7 130ns KM44C4000-8 150ns cycles/64ms KM44C4000 304X4 dram 4mx4 taa 723

    KM428C128

    Abstract: 428C128 256X8 CMOS RAM 428-C KM428C128-6
    Text: r PRELIMINARY v KM428C128 CMOS VIDEO RAM 1 28K X 8 Bit CMOS Video RAM FEATURES • Dual port Architecture 128K x 8 bits RAM port 256 x 8 bits SAM port • Performance - Speed Parameter RAM access tim e tRAc RAM access tim e (tcAc) RAM cycle tim e (tRc)


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    PDF KM428C128 125ns 150ns 100ns 180ns 428C128 40-PIN KM428C128 256X8 CMOS RAM 428-C KM428C128-6

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULES KMM5321000AV/AVG 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM532100QAV is a 1M bitsx32 Dynamic RAM high density memory module. The Samsung KMM5321000AV consist of eight CMOS 1M x4 bit DRAMs in 20-pin SOJ package mounted on a 72-pin


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    PDF KMM5321000AV/AVG 1Mx32 KMM532100QAV bitsx32 KMM5321000AV 20-pin 72-pin 22/jF 130ns 180ns

    Untitled

    Abstract: No abstract text available
    Text: KM75C102A CMOS PROGRAMMABLE FLAG FIFO Programmable-Flags, 1 KX9 FIFO FEATURES DESCRIPTION • First-In-First-Out Dual Port Memory — 1K x 9 Organization • Very High Speed independent of depth/width —30ns Cycle Time • Two Fully configurable Almost Full and Almost


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    PDF KM75C102A 120mA 32-Pin

    MC7810C

    Abstract: No abstract text available
    Text: MC78XXC/AC/I LINEAR INTEGRATED CIRCUIT 3-TERMINAL 1A POSITIVE VOLTAGE REGULATORS The MC78XX/MC78XXA series o f three-term inal positive re gulato rs are available in the T0-220 package and w ith several fixe d o u tp u t voltages, m aking it useful in a w ide range o f a p p lica tio n s. These re gulato rs can


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    PDF MC78XXC/AC/I MC78XX/MC78XXA T0-220 MC7810C

    Untitled

    Abstract: No abstract text available
    Text: KF347/A LINEAR INTEGRATED CIRCUIT QUAD JFET INPUT OPERATIONAL AMPLIFIERS The KF347 is a high speed quad JFET input operation­ al amplifiers. This feature high impedance, wide band­ width, high slew rate, and low input offset and bias currents. The KF347 may be used in circuits requiring


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    PDF KF347/A KF347 KF347 KF347A 20KHz KF347/A:

    KM44C4100-6

    Abstract: xnxx KM44C4100-7 km44c4100 taa 723 KM44C4100-8 dram 4mx4
    Text: KM44C4100 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page M ode FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e ra nge: The Samsung K M 4 4 C 4 1 0 0 is a high speed CMOS 4 , 1 9 4 ,3 0 4 X 4 Dynam ic Random A ccess M em ory. Its design is optim ized for high perform ance applications


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    PDF KM44C4100 KM44C4100-6 11Ons KM44C41 130ns 150ns cycles/32ms KM44C4100 304X4 xnxx KM44C4100-7 taa 723 KM44C4100-8 dram 4mx4

    41C256

    Abstract: KM41C256P KM41C256-8 KM41C256 KM41C256-7 KM41C256Z KM41C256J KM41C256-10 41C256-
    Text: CMOS DRAM KM41C256 256Kx 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C256 is a CMOS high speed 262,144 bit x 1 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    PDF KM41C256 256Kx 130ns 150ns 180ns KM41C256 16-LEAD 41C256 KM41C256P KM41C256-8 KM41C256-7 KM41C256Z KM41C256J KM41C256-10 41C256-

    KMM5916000

    Abstract: No abstract text available
    Text: KMM5916000/T DRAM MODULES 16 M x 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5916000/T is a 16M bit x 9 Dynamic RAM high density memory module. The Samsung KMM5916000/T consist of nine KM41C16000rr DRAMs


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    PDF KMM5916000/T KMM5916000-6 KMM5916000-7 KMM5916000-8 110ns 130ns 150ns KMM5916000/T KM41C16000rr KMM5916000

    KM44C256AP

    Abstract: KM44C256AJ samsung hv capacitor KM44C256A-8 KM44C256A-10 KM44C256A KM44C256A-12
    Text: SAMSUNG SEMICONDUCTOR INC E3E D 7=^4145 OOQfilbO 7 KM44C256A CMOS DRAM 2 5 6 K x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tfUC KM44C256A- 8 80ns tcAc 20ns tRC 150ns KM44C256A-10 100ns 25ns 180ns KM44C256A-12


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    PDF KM44C256A 256Kx4 KM44C256A- 150ns KM44C256A-10 100ns 180ns KM44C256A-12 120ns 220ns KM44C256AP KM44C256AJ samsung hv capacitor KM44C256A-8 KM44C256A