Untitled
Abstract: No abstract text available
Text: SDT96301 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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SDT96301
O204AE)
18-Jun-02
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SDT96302
Abstract: TO114 SDT96303 transistor 2n4866 2N5250 2N5251 SDT96301 TO-114 C3284 power transistor 2N4866
Text: Device Type VCEO hFE V Min/Max @ IC (A) 2N4865 2N4866 2N5250 2N5251 SDT96301 SDT96302 SDT96303 SDT96401 SDT96402 SDT96403 SDT96901 SDT96902 SDT96903 80 120 100 150 60 100 140 60 100 140 60 100 140 10/40 10/40 10/40 10/40 10 10 10 10 10 10 10 10 10 70.0 70.0
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2N4865
2N4866
2N5250
2N5251
SDT96301
SDT96302
SDT96303
SDT96401
SDT96402
SDT96403
SDT96302
TO114
SDT96303
transistor 2n4866
2N5250
2N5251
SDT96301
TO-114
C3284 power transistor
2N4866
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SDT96301
Abstract: No abstract text available
Text: SDT96301 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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SDT96301
O204AE)
1-Aug-02
SDT96301
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max6090
Abstract: No abstract text available
Text: SDT96301 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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SDT96301
O204AE)
17-Jul-02
max6090
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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2NS604
Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75
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2N2387
2N2988
2N2S89
2N2990
2N2991
2N2992
2N2993
2N2994
2N3439
2N3440
2NS604
2NS540
2NS154
SD716
SDT13305
2N5671
2N5005
SDT425
SDT7605
SDT96302
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B2275
Abstract: SDT96303 SFT815
Text: SF T 8 1 5 ENERGY M IG H NPN EAST ROWER TRANSISTOR 90 AMPS, CASE SSDI SWITCHING 300 V O L T 14849 FIRESTONE BLVD. LA MIRADA. CA. 90638 TEL 213 921-9660 FAX (213) 921-2396 STYLE JEDEC TO-3 WITH FEATURES .060 PINS t » t k t t ► t M A X I M U M HIGH ENERGY
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SFT815
SDT96301-SDT96303
B2275
SDT96303
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BUX22 equivalent
Abstract: SDT96306
Text: at SOLITRON DEVICES INC 7" - 7 j - o r FË^fl3t.at.05 oooasTa 3 I " - ELEMENT NUMBER MEDIUM TO HIGH VOLTAGE, HIGH CURRENT NPN EPITAXIAL PLANAR POWER TRANSISTOR * FORMERLY 96 CONTACT METALLIZATION Base and emitter: > 5 0 .0 0 0 Â Aluminum Collector: Polished Silicon
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88mmX9
305mm)
15MHz
15MHz
800pF
BUX22 equivalent
SDT96306
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Untitled
Abstract: No abstract text available
Text: 8 3 6 8 6 0 2 SOL IT R ON D E V I C E S [^ © Q D © ? INC 95D 02871 TS D E | s 3 t . ö b O E 0 0 D E S 71 1 © Ä 1F Ä 1L © © 13 | 7~— Z 3 -/S - -JfèlitrQ n _ Devices, Inc. M EDIUM TO HIGH VO LTA G E, HIGH CURRENT CHIP N U M BER
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SDT96308
Abstract: sdt96
Text: Contran MEDIUM TO HIGH VOLTAGE, HIGH CURRENT CHIP NUMBER Devices. Inc. NPN EPITAXIAL PLAIMAR POWER TRANSISTOR FORMERLY 96 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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305mm)
cont10V
800pF
800pF
JAN2N5250,
JAN2N5251,
SDT96308
sdt96
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2N6960
Abstract: TO114 SDT96302 SDT96303 2N4002 2N5678 2N421 2N6742 2N6884 SDT8756
Text: n? SOLITRON DEVICES 95D 0277 3 INC S0LITR0N DEVICES INC TS D T - 3 3 - O Z D f F | fl3bflbDS 0002773 1 |~ [ ^ m © ^ © M ^ y o © P L A N A R P O W E R T R A N S IS T O R S Devices, Inc. @ 1] MOW? Ic A) *T MIN (MHz) PT MAX (W) CASE TYPE CHIP TYPE 1.50
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2N6546
2N6547
SDT14411
SDT14412
SDT14413
SDT14414
SDT14415
2N6246
2N6247
O-114
2N6960
TO114
SDT96302
SDT96303
2N4002
2N5678
2N421
2N6742
2N6884
SDT8756
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transistor 05c
Abstract: 800PF 2N6325 SDT96301 SDT96308 8A550A
Text: ^/olitron [p|£ì |D lJ)(ST Ä T Ä IL © ( M EDIUM TO HIGH VOLTAGE, HIGH CURRENT Devices. Inc. CHIP NUM BER NPN EPITAXIAL PLANAR POWER TRANSISTOR (FORMERLY 96) cf] CONTACT METALLIZATION A Base and emitter: > 50,000 Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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305mm)
transistor 05c
800PF
2N6325
SDT96301
SDT96308
8A550A
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MNT6337J
Abstract: SML1258 SML-1258 MJ15003 MJ15004 MNT6337H SM1307 NPN/SML1258 mnt6337 HP5082 MHQ2222
Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No Description HP5082-2800DCSM BCW29CSM MD2905 MD3725 MD5000 MD6003 MD7001 MHQ2222 MHQ2222A MHQ2907 MHQ6002 MJ11013 MJ11014 MJ11028 MJ11029 MJ11030 MJ11031 MJ11032 MJ11033 MJ14000 MJ14001 MJ14002
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HP5082-2800DCSM
BCW29CSM
MD2905
MD3725
MD5000
MD6003
MD7001
MHQ2222
MHQ2222A
MHQ2907
MNT6337J
SML1258
SML-1258
MJ15003 MJ15004
MNT6337H
SM1307
NPN/SML1258
mnt6337
HP5082
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