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    SD56120 Search Results

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    SD56120 Price and Stock

    STMicroelectronics SD56120

    RF MOSFET LDMOS 28V M246
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SD56120 Box 60
    • 1 -
    • 10 -
    • 100 $153.8115
    • 1000 $153.8115
    • 10000 $153.8115
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    Newark SD56120 Bulk 60
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    STMicroelectronics SD56120M

    RF MOSFET LDMOS 32V M252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SD56120M Tube 60
    • 1 -
    • 10 -
    • 100 $158.49632
    • 1000 $158.49632
    • 10000 $158.49632
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    STMicroelectronics SD56120MK

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SD56120MK 162 1
    • 1 $186.303
    • 10 $186.303
    • 100 $136.9327
    • 1000 $136.9327
    • 10000 $136.9327
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    Quest Components SD56120MK 129
    • 1 $248.625
    • 10 $215.475
    • 100 $198.9
    • 1000 $198.9
    • 10000 $198.9
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    SD56120 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SD56120 STMicroelectronics RF POWER TRANSISTORS THE LDMOST FAMILY Original PDF
    SD56120 STMicroelectronics RF POWER TRANSISTORS THE LDMOST FAMILY Original PDF
    SD56120 STMicroelectronics RF POWER TRANSISTORS The LdmoST FAMILY Original PDF
    SD56120 STMicroelectronics RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Original PDF
    SD56120 STMicroelectronics RF POWER TRANSISTORS The LdmoST FAMILY Scan PDF
    SD56120C STMicroelectronics RF FETs, Discrete Semiconductor Products, TRANSISTOR RF PWR LDMOST M246 Original PDF
    SD56120M STMicroelectronics RF power transistors, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Original PDF
    SD56120M STMicroelectronics RF Power Transistor Original PDF
    SD56120M STMicroelectronics RF POWER TRANSISTORS THE LDMOST FAMILY Original PDF

    SD56120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M252

    Abstract: SD56120M
    Text: SD56120M RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSHPULL • POUT = 120 W WITH 13 dB gain @ 860 MHz /32V • BeO FREE PACKAGE M252 epoxy sealed


    Original
    PDF SD56120M SD56120M M252

    J 3488

    Abstract: No abstract text available
    Text: SD56120M RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSHPULL • POUT = 120 W WITH 13 dB gain @ 860 MHz /32V • BeO FREE PACKAGE M252 epoxy sealed


    Original
    PDF SD56120M SD56120M TSD56120M J 3488

    SD56120

    Abstract: XSD56120 m246
    Text: SD56120 RF POWER TRANSISTORS The LdmoST FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • ■ ■ ■ EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL POUT = 100 W PEP WITH 13 dB GAIN @ 860 MHz BeO FREE PACKAGE DESCRIPTION


    Original
    PDF SD56120 SD56120 XSD56120 XSD56120 m246

    Untitled

    Abstract: No abstract text available
    Text: SD56120M RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 120W with 13dB gain @ 860MHz / 32V ■ BeO free package ■


    Original
    PDF SD56120M 860MHz SD56120M

    200B

    Abstract: 700B SD56120 balun 50 ohm
    Text: SD56120 RF power transistor, the LdmoST family Features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 100 W with 14 dB gain @ 860 MHz ■ BeO-free package Description The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power


    Original
    PDF SD56120 SD56120 200B 700B balun 50 ohm

    Untitled

    Abstract: No abstract text available
    Text: SD56120M RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSHPULL • POUT = 120 W WITH 13 dB gain @ 860 MHz /32V • BeO FREE PACKAGE M252 epoxy sealed


    Original
    PDF SD56120M SD56120M TSD56120M

    balun 50 ohm

    Abstract: 200B 700B JESD97 SD56120 TSD56120
    Text: SD56120 RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 100W with 14dB gain @ 860MHz ■ BeO free package Description


    Original
    PDF SD56120 860MHz SD56120 balun 50 ohm 200B 700B JESD97 TSD56120

    JESD97

    Abstract: M252 SD56120M
    Text: SD56120M RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 120W with 13dB gain @ 860MHz / 32V ■ BeO free package ■


    Original
    PDF SD56120M 860MHz SD56120M JESD97 M252

    GP140

    Abstract: GP 140 M252 SD56120M
    Text: SD56120M RF POWER TRANSISTORS The LdmoST FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSHPULL • POUT = 120 W WITH 13 dB gain @ 860 MHz /28V • BeO FREE PACKAGE M252 epoxy sealed


    Original
    PDF SD56120M SD56120M GP140 GP 140 M252

    100 pf, ATC Chip Capacitor 100A

    Abstract: M252 SD56120M
    Text: SD56120M RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSHPULL • POUT = 120 W WITH 13 dB gain @ 860 MHz /32V • BeO FREE PACKAGE M252 epoxy sealed • INTERNAL INPUT MATCHING


    Original
    PDF SD56120M SD56120M 100 pf, ATC Chip Capacitor 100A M252

    Untitled

    Abstract: No abstract text available
    Text: SD56120M RF POWER TRANSISTORS The LdmoST FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSHPULL • POUT = 120 W WITH 13 dB gain @ 860 MHz /32V • BeO FREE PACKAGE M252 epoxy sealed


    Original
    PDF SD56120M SD56120M

    balun 50 ohm

    Abstract: 200B 700B SD56120 TSD56120 860 z2 resistor 47 ohm
    Text: SD56120 RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 100 W WITH 14 dB GAIN @ 860 MHz M246 epoxy sealed • BeO FREE PACKAGE


    Original
    PDF SD56120 SD56120 TSD56120 balun 50 ohm 200B 700B TSD56120 860 z2 resistor 47 ohm

    Untitled

    Abstract: No abstract text available
    Text: SD56120 RF power transistor, the LdmoST family Features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 100 W with 14 dB gain @ 860 MHz ■ BeO-free package Description The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power


    Original
    PDF SD56120 SD56120

    M252

    Abstract: SD56120M
    Text: SD56120M RF POWER TRANSISTORS The LdmoST FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 120 W with 13 dB gain @ 860 MHz • BeO FREE PACKAGE M252 • INTERNAL INPUT MATCHING


    Original
    PDF SD56120M SD5120M SD56120M M252

    200B

    Abstract: 700B SD56120
    Text: SD56120C RF power transistor, the LdmoST family Features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 100 W with 14 dB gain @ 860 MHz ■ BeO-free package Description The SD56120C is a common source N-Channel enhancement-mode lateral Field-Effect RF power


    Original
    PDF SD56120C SD56120C 200B 700B SD56120

    SD56120

    Abstract: XSD56120 0660H m246
    Text: SD56120  RF POWER TRANSISTORS The LdmoST FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • ■ ■ ■ EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL POUT = 100 W PEP WITH 13 dB GAIN @ 860 MHz BeO FREE PACKAGE DESCRIPTION


    Original
    PDF SD56120 SD56120 XSD56120 XSD56120 0660H m246

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    SO42

    Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
    Text: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002


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    PDF PowerSO-10RF PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002 PD57006 PD57018 SO42 STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier

    200W PUSH-PULL

    Abstract: cw 180 LDU200-S power 470-860mhz w SD56120M thermal compound wps TRANSCLAMP-1
    Text: LDU200-S 200W peak sync LDMOS Technology Designed for anolog and digital TV transposers and transmitters, this amplifier incorporates microstrip technology and push-pull LDMOS to enhance ruggedness and reliability. • • • • 470 - 860 MHz 28 ÷32 Volt 32 Nominal


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    PDF LDU200-S 200Wps 150Wps SD56120M 175x85x30 GR00247 200W PUSH-PULL cw 180 LDU200-S power 470-860mhz w thermal compound wps TRANSCLAMP-1

    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


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    PDF RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


    Original
    PDF te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H

    05612

    Abstract: No abstract text available
    Text: This document was generated on 01/18/2011 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Description: Replacement Part Number: 0561208590 Contact Molex CRC Shielded Rectangular I/O Female Terminal, Signal, Bag 561208528 Documents:


    Original
    PDF PS-500810-001 PS-500810-001 SD-56120-001 05612

    860mhz 100w

    Abstract: SD56120 XSD56120 m246
    Text: SD56120 RF POWER TRANSISTORS The Lc//77oS7"FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION, PUSH-PULL . P o u t = 100 W PEP WITH 13 dB GAIN @ 860 MHz . BeO FREE PACKAGE DESCRIPTION The SD56120 is a common source N-Channel


    OCR Scan
    PDF SD56120 SD56120 XSD56120 860mhz 100w XSD56120 m246

    Untitled

    Abstract: No abstract text available
    Text: 10 0 . 15 MAX. CUT-OFF LENGTH \-M— x p| f p| bc-rr-H-rf 4 • = B TP" Q r SECTION A -A SECTION B -B s ib NOTES 1 MATERIAL 0 /v rMI (tSJP ’ 0 o 2 ) PHOSPHOR BRONZE (THICKNESS :0.2) TERMINAL PLATING : ^ 'V io . 2 5 CONTACT AREA : GOLD JEBinE o CRIMP AREA : TIN


    OCR Scan
    PDF 5I239-* SD-56120-009 EN-02JAI021)