ic melody generator
Abstract: AN2201 AN2203 HUW-66 Q11 DPDT AS253X 4013AN huw66 AN3020 4013 Microphone
Text: Preliminary AN2203 Application Note AN2203: AS2533.6 Single Chip Telephone Austria Mikro Systeme International AG with on-hook dialing, loudhearing and music-on-hold with auto-release 1. Scope This application note describes a simple, low cost and step-by-step upgradable application for the
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AN2203
AN2203:
AS2533.
AN2203
ic melody generator
AN2201
HUW-66
Q11 DPDT
AS253X
4013AN
huw66
AN3020
4013 Microphone
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Midcom modem transformer 671-8005
Abstract: fsk modulator demodulator intel fsk modulator demodulator free of lm 1458 rs232 4n35 IEEE EARTHING 202S 73K212AL psk modulator demodulator 73K302L
Text: 73K302L Bell 212A, 103, 202 Single-Chip Modem April 2000 DESCRIPTION FEATURES The 73K302L is a highly integrated single-chip modem IC which provides the functions needed to construct a Bell 202, 212A and 103 compatible modem. The 73K302L is an enhancement of the
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73K302L
73K302L
73K212L
substrateK302L-IH
Midcom modem transformer 671-8005
fsk modulator demodulator
intel fsk modulator demodulator
free of lm 1458
rs232 4n35
IEEE EARTHING
202S
73K212AL
psk modulator demodulator
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dr 5v
Abstract: No abstract text available
Text: 73K302L Bell 212A, 103, 202 Single-Chip Modem April 2000 DESCRIPTION FEATURES The 73K302L is a highly integrated single-chip modem IC which provides the functions needed to construct a Bell 202, 212A and 103 compatible modem. The 73K302L is an enhancement of the
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73K302L
73K212L
dr 5v
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Untitled
Abstract: No abstract text available
Text: 73K302L Bell 212A, 103, 202 Single-Chip Modem TDK SEMICONDUCTOR CORP. April 2000 DESCRIPTION FEATURES The 73K302L is a highly integrated single-chip modem IC which provides the functions needed to construct a Bell 202, 212A and 103 compatible modem. The 73K302L is an enhancement of the
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73K302L
73K212L
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FSK v.23
Abstract: MIDCOM 671-8005 73K324L 321L 73K212AL 80C51 fsk modulator ccitt r1 73K324L-IP
Text: 73K324L CCITT V.22bis, V.22, V.21, V.23, Bell 212A Single-Chip Modem April 2000 DESCRIPTION FEATURES The 73K324L is a highly integrated single-chip modem IC which provides the functions needed to design a Quad-mode CCITT and Bell 212A compatible modem capable of operation over dial-up
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73K324L
22bis,
73K324L
73K224
FSK v.23
MIDCOM 671-8005
321L
73K212AL
80C51
fsk modulator
ccitt r1
73K324L-IP
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671-8005
Abstract: QAM FSK demodulator v250l20 intel 8039 C 12 PH Zener diode circuit diagram of calling bell free datasheet of lm 1458 tdk cd y1 250v Midcom* 671 8005 IN4004 diode data sheet
Text: 73K324L CCITT V.22bis, V.22, V.21, V.23, Bell 212A Single-Chip Modem TDK SEMICONDUCTOR CORP. June 2001 DESCRIPTION FEATURES The 73K324L is a highly integrated single-chip modem IC which provides the functions needed to design a Quad-mode CCITT and Bell 212A
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73K324L
22bis,
73K324L
73K224
671-8005
QAM FSK demodulator
v250l20
intel 8039
C 12 PH Zener diode
circuit diagram of calling bell
free datasheet of lm 1458
tdk cd y1 250v
Midcom* 671 8005
IN4004 diode data sheet
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Untitled
Abstract: No abstract text available
Text: 73K324L CCITT V.22bis,V.23,V.22,V.21,Bell 212A Single-Chip Modem DATA SHEET JULY 2005 DESCRIPTION FEATURES The 73K324L is a highly integrated single-chip modem IC, which provides the functions, needed to design a Quad-mode CCITT and Bell 212A compatible modem capable of operation over dial-up
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73K324L
22bis
73K324L
73K224
22bis,
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73K324L-28IH/F
Abstract: 321L 73K212AL 73K324L 80C51 One-chip telephone IC 4 QAM modulator demodulator circuitry fsk tone encoder
Text: 73K324L CCITT V.22bis,V.23,V.22,V.21,Bell 212A Single-Chip Modem Simplifying System Integration DATA SHEET JUNE 2008 DESCRIPTION FEATURES The 73K324L is a highly integrated single-chip modem IC, which provides the functions, needed to design a Quad-mode CCITT and Bell 212A
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73K324L
22bis
73K324L
73K224
22bis,
73K324L-28IH/F
321L
73K212AL
80C51
One-chip telephone IC
4 QAM modulator demodulator circuitry
fsk tone encoder
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rj48_con
Abstract: 5B1 package SMD 11D4 pc motherboard schematics 11B7 5A6 t smd
Text: DS21352DK T1 Single-Chip Transceiver Design Kit Daughter Card www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS21352 design kit is an easy-to-use evaluation board for the DS21352 T1 single-chip transceiver SCT . The DS21352DK is intended to be used as a
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DS21352DK
DS21352
DK2000
DK101
DK101/DK2000
DS21352DK
rj48_con
5B1 package SMD
11D4
pc motherboard schematics
11B7
5A6 t smd
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PTB 00 ATEX 3117
Abstract: GHG43 EX-88 Ex-87 PTB 99 ATEX 3117 PTB No. Ex-87.B.2016U crouse-hinds 10 GHG432 ATEX 3117 ddto
Text: 4C GHG43 Series Control Stations Nonmetallic or 316L Stainless Steel Corrosion Resistant UL/cUL listed Cl. I, Div. 2, Groups A, B, C, D Cl. I, Zones 1 and 2, A Ex de IIB + H2 T6 Cl. II, Div. 1, Groups E, F, G (cUL) PTB ATEX CERTIFIED 3117 Ex de IIC, T6,
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GHG43
PTB 00 ATEX 3117
EX-88
Ex-87
PTB 99 ATEX 3117
PTB No. Ex-87.B.2016U
crouse-hinds 10
GHG432
ATEX 3117
ddto
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5A6 smd
Abstract: 10uF 160v Transistor 8c4 6c2 diode 9A4 SMD SMD 6c6 TANTALUM SMD CAPACITOR CROSS-REFERENCES Transistor 6C5 DK101 DK2000
Text: DS21354DK E1 Single-Chip Transceiver Design Kit Daughter Card www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS21354 design kit is an easy-to-use evaluation board for the DS21354 E1 single-chip transceiver SCT . The DS21354DK is intended to be used as a
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DS21354DK
DS21354
DS21354DK
DK2000
DK101
DK101/DK2000
IDTQS3R861
5A6 smd
10uF 160v
Transistor 8c4
6c2 diode
9A4 SMD
SMD 6c6
TANTALUM SMD CAPACITOR CROSS-REFERENCES
Transistor 6C5
DK101
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5A6 smd
Abstract: 4C6 SPECIFICATIONS 11d4 Transistor 8c4 smd 8c7 5a7 02 11d5 XC95144XL-10TQ100c DK101 DS18
Text: DS21352DK T1 Single-Chip Transceiver Design Kit Daughter Card www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS21352 design kit is an easy-to-use evaluation board for the DS21352 T1 single-chip transceiver SCT . The DS21352DK is intended to be used as a
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DS21352DK
DS21352
DS21352DK
DK2000
DK101
DK101/DK2000
IDTQS3R861
5A6 smd
4C6 SPECIFICATIONS
11d4
Transistor 8c4
smd 8c7
5a7 02
11d5
XC95144XL-10TQ100c
DK101
DS18
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PTB 00 ATEX 3117
Abstract: PTB No. Ex-87.B.2016U PTB 99 ATEX 3117 ATEX 3117 PTB 99 ATEX 1007U Power cable 25mm2 EX-88 GHG43 n608 LM 3117
Text: 2: 5: SYS19: BASE2 PDFINFO 50: 95: 98: JOB: CRMAIN06-0601-3 Name: N-601 100: DATE: JAN 19 2006 Time: 5:37:08 PM Operator: RB COLOR: CMYK UL/cUL listed Cl. I, Div. 2, Groups A, B, C, D Cl. I, Zones 1 and 2, A Ex de IIB + H2 T6 Cl. II, Div. 1, Groups E, F, G (cUL)
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SYS19:
CRMAIN06-0601-3
N-601
66008com
CRMAIN06-0610-1
N-610
PTB 00 ATEX 3117
PTB No. Ex-87.B.2016U
PTB 99 ATEX 3117
ATEX 3117
PTB 99 ATEX 1007U
Power cable 25mm2
EX-88
GHG43
n608
LM 3117
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5A6 smd
Abstract: smd 5b1 9A4 smd transistor Transistor 8c4 smd 3D5 3 PIN 11d4 Teccor Electronics a6 DK101 DK2000 DS2155DK
Text: DS2155DK/DS2156DK T1/E1/J1 Single-Chip Transceiver Design Kit Daughter Cards www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS2155/DS2156 design kits are evaluation boards for the DS2155 and DS2156. The DS2155/DS2156 design kits are intended to be used
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DS2155DK/DS2156DK
DS2155/DS2156
DS2155
DS2156.
DK2000
DK101
DK2000
DS2156
5A6 smd
smd 5b1
9A4 smd transistor
Transistor 8c4
smd 3D5 3 PIN
11d4
Teccor Electronics a6
DS2155DK
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IRF624A
Abstract: No abstract text available
Text: IRF624A A dvanced Power MOSFET FEATURES B V DSS — 2 5 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 .1 Q 4 .1 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10nA(M ax.) @ V DS = 250V
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IRF624A
742fi
IRF624A
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Untitled
Abstract: No abstract text available
Text: IRFW/I624A A dvanced Power MOSFET FEATURES B V DSS — 2 5 0 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 4 .1 A lD = ♦ Improved Gate Charge 1 .1 Î 2 ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V
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IRFW/I624A
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Power MOSFET 50V 10A
Abstract: 108D IRFP254A
Text: IRFP254A Advanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 25 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -3 P ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V
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IRFP254A
Power MOSFET 50V 10A
108D
IRFP254A
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IRF654A
Abstract: 108D
Text: IRF654A Advanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 21 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V
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IRF654A
O-220
IRF654A
108D
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108D
Abstract: IRFP254
Text: IRFP254 A dvanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 25 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -3 P ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V
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IRFP254
108D
IRFP254
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PDF
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IRF654
Abstract: 108D
Text: IRF654 A dvanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 21 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V
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IRF654
O-220
IRF654
108D
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IRFP244
Abstract: nrf d
Text: IRFP244 A dvanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .2 8 Î2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 16 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V
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IRFP244
IRFP244
nrf d
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07278
Abstract: BAF1-3RN2X-LH MAY94
Text: CATALOG MI CRO SWITCH I luii'Ci *» «Ml 1*0« 0*»*»T i j | | LriJ LISTING B A F 1-3R N 2X -L H SWITCH - ENCLOSED F ED . MFR. CODE 9 1 9 2 9 X CM z .5 9 0 1 .030 — oe Ï GASKET TYPE SEAL BETWEEN COVER AND HOUStNC .530 ¿ .0 3 0 - H ÜL < R O LLER L E V E R IS SHOWN IN IT S
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PR-673
CO-3000-B
I54380B
C054997Ã
7TI79-E
c081513B
030-H
480VAC
125VAC,
2HP25DVAC
07278
BAF1-3RN2X-LH
MAY94
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Untitled
Abstract: No abstract text available
Text: IRFW/I830A A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 4 .5 A lD = ♦ Improved Gate Charge 1 .5 Î 2 ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V
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IRFW/I830A
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IRF830S
Abstract: No abstract text available
Text: IRF830S A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 4 .5 A lD = ♦ Improved Gate Charge 1 .5 Î 2 ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V
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IRF830S
IRF830S
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