SCR Inverter
Abstract: SCHEMATIC POWER SUPPLY WITH scr SCR PNPN
Text: GENERAL INFORMATION 1 Latch-up LATCH-UP CIRCUIT Latch-up is caused by an SCR Silicon Controlled Rectifier circuit. Fabrication of CMOS integrated circuits with bulk silicon processing creates a parasitic SCR structure. The behavior of this SCR is similar in principle to a true SCR. These structures result from the multiple diffusions needed for
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14105B-1
SCR Inverter
SCHEMATIC POWER SUPPLY WITH scr
SCR PNPN
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MS-012-AA ISSUE C
Abstract: SP721 MS-001-BA MS-012-AA VSP721 high current scr
Text: SP721 100 2.5 TA = 25oC SINGLE PULSE 2 FORWARD SCR CURRENT A FORWARD SCR CURRENT (mA) 80 TA = 25oC SINGLE PULSE 60 40 20 1.5 1 IFWD EQUIV. SAT. ON THRESHOLD ~ 1.1V 0.5 VFWD 600 800 1000 1200 FORWARD SCR VOLTAGE DROP (mV) FIGURE 2. LOW CURRENT SCR FORWARD VOLTAGE DROP
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SP721
SP721
MS-012-AA ISSUE C
MS-001-BA
MS-012-AA
VSP721
high current scr
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Power thyristor
Abstract: S402ES s602es 15amp TO-92 Silicon Controlled Rectifiers EIA-468 Silicon Controlled Rectifiers gas ignition "Silicon Controlled Rectifiers" 35 amp "Power thyristor" On semiconductor date Code sot-223
Text: Teccor brand Thyristors Silicon Controlled Rectifiers Sx02xS EV Series 1.5 Amp Sensitive SCR Description New 1.5Amp sensitive gate SCR series offers high static dv/dt with low turn off time tq through small die planar construction design. All SCR’s junctions are glasspassivated to ensure long term reliability and parametric
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Sx02xS
15Amps
OT-223
OT-223)
Power thyristor
S402ES
s602es
15amp TO-92 Silicon Controlled Rectifiers
EIA-468
Silicon Controlled Rectifiers
gas ignition
"Silicon Controlled Rectifiers" 35 amp
"Power thyristor"
On semiconductor date Code sot-223
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Untitled
Abstract: No abstract text available
Text: VSK.170PbF, VSK.250PbF Series www.vishay.com Vishay Semiconductors SCR/SCR and SCR/Diode MAGN-A-PAK Power Modules , 170 A/250 A FEATURES • High voltage • Electrically isolated base plate • 3500 VRMS isolating voltage • Industrial standard package
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170PbF,
250PbF
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Bulletin I27102 rev. C 05/02 IRK. SERIES MAGN-A-pak Power Modules SCR / SCR and SCR / DIODE Features High voltage Electrically isolated base plate 170A 230A 250A 3000 V RMS isolating voltage Industrial standard package Simplified mechanical designs, rapid assembly
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I27102
E78996
08-Mar-07
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E78996 scr
Abstract: S2000 series scr vskt thyristor TT 45 N 1200 3 phase BUSBAR
Text: VSK.170PbF, VSK.250PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode MAGN-A-PAK Power Modules , 170 A/250 A FEATURES • High voltage • Electrically isolated base plate • 3500 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly
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170PbF,
250PbF
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
E78996 scr
S2000
series scr
vskt
thyristor TT 45 N 1200
3 phase BUSBAR
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Untitled
Abstract: No abstract text available
Text: VSK.170PbF, VSK.250PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode MAGN-A-PAK Power Modules , 170 A/250 A FEATURES • High voltage • Electrically isolated base plate • 3500 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly
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170PbF,
250PbF
E78996
2002/95/EC
18-Jul-08
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scr C35
Abstract: 2N683 2N690 2N681-2N692 2N688 2n692 2N681 2N682 FREEPORT 2N684
Text: Semitronics Discrete Semiconductors C35 Series: 2N681-2N692 Description Phase Control SCR 16 Amperes / 25-800 Volts Silicon Controlled Rectifiers SCR are reverse blocking triode thyristor semiconductor devices designed for power switching and phase control
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2N681-2N692
MIL-PRF-19500/108
scr C35
2N683
2N690
2N681-2N692
2N688
2n692
2N681
2N682
FREEPORT
2N684
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Untitled
Abstract: No abstract text available
Text: SO T2 23 MCR08BT1 SCR 23 July 2014 Product data sheet 1. General description Planar passivated SCR with sensitive gate in a SOT223 surface mountable plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
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MCR08BT1
OT223
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tt 3043
Abstract: RS401 SCRN234R SCRN235R SCRN236R SCRN237R SCRN238R SCRN262R SCRN263R SCRN264R
Text: Type SCR Commutating Capacitors Type SCRN Film-Paper/Extended Foil Commutating Capacitors Type SCRN capacitors are for SCR silicon controlled rectifier commutating applications that require high peak and rms current capability. These capacitors are ideal for other
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RS401
tt 3043
SCRN234R
SCRN235R
SCRN236R
SCRN237R
SCRN238R
SCRN262R
SCRN263R
SCRN264R
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Untitled
Abstract: No abstract text available
Text: SO T2 23 BT168GW SCR 21 February 2014 Product data sheet 1. General description Planar passivated SCR with sensitive gate in a SOT223 surface mountable plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
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BT168GW
OT223
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Untitled
Abstract: No abstract text available
Text: SO T2 23 BT168GWF SCR 21 February 2014 Product data sheet 1. General description Planar passivated SCR with faster switching performance and sensitive gate in a SOT223 surface mounted plastic package. This SCR with enhanced commutation performance is also designed to be interfaced directly to microcontrollers, logic integrated
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BT168GWF
OT223
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Untitled
Abstract: No abstract text available
Text: SO T2 23 BT168GWF SCR 11 July 2014 Product data sheet 1. General description Planar passivated SCR with faster switching performance and sensitive gate in a SOT223 surface mounted plastic package. This SCR with enhanced commutation performance is also designed to be interfaced directly to microcontrollers, logic integrated
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BT168GWF
OT223
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SCRN247R-F
Abstract: SCR 213
Text: Type SCR Commutating Capacitors Type SCRN Film-Paper/Extended Foil Commutating Capacitor Type SCRN capacitors are for SCR silicon controlled rectifier commutating applications that require high peak and rms current capability. These capacitors are ideal for
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RS401
fCVrmsX10-6
SCRN247R-F
SCR 213
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MP03HBT275-12
Abstract: MP03HBT275-18 MP03XXX275 MP03XXX275-18
Text: MP03XXX275 Series MP03XXX275 Series Phase Control Dual SCR, SCR/Diode Modules Replaces January 2002version, DS4481-6.0 DS4481-7.0 July 2002 FEATURES KEY PARAMETERS • Dual Device Module VDRM 1800V ■ Electrically Isolated Package ITSM 8100A ■ Pressure Contact Construction
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MP03XXX275
2002version,
DS4481-6
DS4481-7
MP03XXX275-18
125oC
MP03XXX275-16
16arantee
MP03HBT275-12
MP03HBT275-18
MP03XXX275-18
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MP03HBT275-12
Abstract: MP03HBT275-18 MP03HBP275-18 MP03XXX275 MP03XXX275-18
Text: MP03XXX275 Series MP03XXX275 Series Phase Control Dual SCR, SCR/Diode Modules Replaces January 2002version, DS4481-6.0 DS4481-7.0 July 2002 FEATURES KEY PARAMETERS • Dual Device Module VDRM 1800V ■ Electrically Isolated Package ITSM 8100A ■ Pressure Contact Construction
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MP03XXX275
2002version,
DS4481-6
DS4481-7
MP03XXX275-18
125oC
MP03XXX275-16
16arantee
MP03HBT275-12
MP03HBT275-18
MP03HBP275-18
MP03XXX275-18
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scr 106 dg
Abstract: SCR 103 cdi ignition circuit capacitive discharge ignition 800R cdi ignition
Text: BT151X-800R SCR 24 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier SCR in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring high bidirectional blocking
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BT151X-800R
OT186A
O-220F)
scr 106 dg
SCR 103
cdi ignition circuit
capacitive discharge ignition
800R
cdi ignition
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Untitled
Abstract: No abstract text available
Text: Type SCR, Commutating Capacitors Type SCRN Film-Paper/Extended Foil Commutating Capacitor Type SCRN capacitors are for SCR silicon controlled rectifier commutating applications that require high peak and rms current capability. These capacitors are ideal for other high frequency and
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RS401
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irkt 132 12
Abstract: No abstract text available
Text: • International SRectffier 4B55452 741 « I N R INTERNATIONAL RECTIFIER bSE D SERIES IRK.F72 FAST SCR / DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate
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4B55452
S545E
JDDlb74b
irkt 132 12
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Untitled
Abstract: No abstract text available
Text: • International S Rectifier 4Ö554S2 001b?b3 TbO ■ INR INTERNATIONAL RECTIFIER bSE » SERIES IRK.F112 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate
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554S2
4fl55452
10ohm
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triode rn 1016
Abstract: 2N1778A thyristor st 103
Text: Discrete Semiconductors C10 Series: 2N1770A-2N2619A Semitronics Phase Control SCR 4.7 Amps 125-600 Volts Description Silicon Controlled Rectifiers SCR are reverse blocking triode thyristor semiconductor devices designed for power switching and phase control
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2N1770A-2N2619A
MIL-PRF-19500/168
2N1770A
triode rn 1016
2N1778A
thyristor st 103
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Untitled
Abstract: No abstract text available
Text: MITEL MP02 XXX 130 Series Phase Control Dual SCR, SCR/Diode Modules SEMICONDUCTOR Supersedes O ctober 1992 version, 2.0 DS4477-2.0 Decem ber 1998 FEATURES Dual Device Module Electrically Isolated Package Pressure Contact Construction International Standard Footprint
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DS4477-2
MP02/130-20
MP02/130-18
MP02/130-16
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scr tic 106
Abstract: No abstract text available
Text: M ITEL MP03 XXX 275 Series Phase Control Dual SCR, SCR/Diode Modules SEMICONDUCTOR Supersedes January 1994 version, 3.2 DS4481-4.0 Decem ber 1998 FEATURES Dual Device Module Electrically Isolated Package Pressure Contact Construction International Standard Footprint
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DS4481-4
MP03/275
scr tic 106
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Untitled
Abstract: No abstract text available
Text: MITEL MP02 XXX 190 Series Phase Control Dual SCR, SCR/Diode Modules SEMICONDUCTOR Supersedes Septem ber 1992 version, 2.2 DS4479-3.0 D ecem ber 1998 FEATURES Dual device module Electrically isolated package Pressure contact construction International standard footprint
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DS4479-3
MP02/190
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