hard disk ATA pcb schematic
Abstract: samsung 1Gb nand flash SAMSUNG NAND FLASH K9F5608 K9F5608 intel nand flash K9F1G08 CF-CON50A flash chip 512mb NAND FLASH 64MB SAMSUNG DATASHEET CHIP CAPACITOR
Text: SAMSUNG ATA FLASH CONTROLLERS REFERENCE DESIGN MANUAL Samsung’s ATA Flash Controllers Reference Design Manual CompactFlash / PC Card / IDE Disk HELP DESK - About Controller : [email protected] - About Flash : [email protected] Samsung Electronics Co.,LTD
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S3CI910X
256Mb
128MB
hard disk ATA pcb schematic
samsung 1Gb nand flash
SAMSUNG NAND FLASH K9F5608
K9F5608
intel nand flash
K9F1G08
CF-CON50A
flash chip 512mb
NAND FLASH 64MB
SAMSUNG DATASHEET CHIP CAPACITOR
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hard disk ATA pcb schematic
Abstract: SAMSUNG NAND FLASH K9F5608 Samsung k9f1208 hard disk 2,5 ATA pcb schematic Nand flash spec samsung after the card initialization design manual K9F1208 cf 44 pin to ide 1.8 ata commands
Text: COMPACT FLASH CARD INITIALIZING GUIDE S3C49F9X Flash Controllers Reference Guide Manual CompactFlash / PC Card / IDE Disk HELP DESK - About Controller : [email protected] - About Flash : [email protected] Samsung Electronics Co., LTD SAMSUNG ATA FLASH CONTROLLERS REFERENCE DESIGN MANUAL
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S3C49F9X
S3C49F9X04
hard disk ATA pcb schematic
SAMSUNG NAND FLASH K9F5608
Samsung k9f1208
hard disk 2,5 ATA pcb schematic
Nand flash spec samsung
after the card initialization
design manual
K9F1208
cf 44 pin to ide 1.8
ata commands
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Samsung k9f1208u
Abstract: SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory
Text: AN1838 APPLICATION NOTE How to Use an ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use an STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for a Samsung device.
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AN1838
NAND128-A,
NAND256-A,
NAND512-A,
NAND01G-A,
128Mbits
Samsung k9f1208u
SAMSUNG NAND FLASH
samsung nand
WSOP48
K9F28
NAND FLASH BGA
samsung 1Gb nand flash
NAND01G cache program
"NAND Flash"
128M NAND Flash Memory
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Untitled
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY KM29W16000BTS Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1999 Preliminary The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W16000BTS
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KM29W32000AIT
Abstract: KM29N32000 400F KM29W32000AT flash row column read write "program and data" 19 Resister 0805 samsung
Text: KM29W32000AT, KM29W32000AIT FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1998 Advance The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W32000AT,
KM29W32000AIT
KM29V32000
KM29N32000
KM29W32000
KM29W32000AIT
KM29N32000
400F
KM29W32000AT
flash row column read write "program and data" 19
Resister 0805 samsung
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KM29W32000ATS
Abstract: No abstract text available
Text: KM29W32000ATS Advance Information FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1998 Advance The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W32000ATS
KM29W32000ATS
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KM29W16000BIT
Abstract: 400F KM29W16000BT
Text: KM29W16000BT, KM29W16000BIT Preliminary FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1999 Preliminary The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W16000BT,
KM29W16000BIT
KM29W16000BIT
400F
KM29W16000BT
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Untitled
Abstract: No abstract text available
Text: KM29U64000AT, KM29U64000AIT Preliminary FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1999 Preliminary The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
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KM29U64000AT,
KM29U64000AIT
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KM29U128AIT
Abstract: KM29U128AT NAND flash memory
Text: Advanced Information FLASH MEMORY KM29U128AT, KM29U128AIT Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1999 Advanced Information The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29U128AT,
KM29U128AIT
KM29U128AA16M
48-pin
KM29U128AIT
KM29U128AT
NAND flash memory
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400F
Abstract: KM29N32000 KM29W32000IT KM29W32000T
Text: KM29W32000T, KM29W32000IT FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W32000T,
KM29W32000IT
KM29V32000
KM29N32000
KM29W32000
400F
KM29N32000
KM29W32000IT
KM29W32000T
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KM29W16000ATS
Abstract: No abstract text available
Text: KM29W16000ATS FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.1 Data Sheet 1998. July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W16000ATS
KM29W16000ATS
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KM29W16000AIT
Abstract: KM29W16000AT
Text: KM29W16000AT, KM29W16000AIT FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.1 Data Sheet 1998. July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W16000AT,
KM29W16000AIT
KM29W16000AIT
KM29W16000AT
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400F
Abstract: KM29N32000 KM29W32000TS
Text: KM29W32000TS FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W32000TS
KM29V32000
KM29N32000
KM29W32000
400F
KM29N32000
KM29W32000TS
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KM29U64000IT
Abstract: KM29U64000T 400F
Text: KM29U64000T, KM29U64000IT FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to cha nge the
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KM29U64000T,
KM29U64000IT
KM29U64000IT
KM29U64000T
400F
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SAMSUNG NAND FLASH
Abstract: Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8
Text: AN1838 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use a Small Page 528 Byte/264 Word Page STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for
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AN1838
Byte/264
NAND128-A,
NAND256-A,
NAND512-A,
NAND01G-A,
128Mbits
SAMSUNG NAND FLASH
Samsung 256 Gbit nand
NAND01G cache program
Samsung k9f1208u
K9F1208U0M
NAND FLASH BGA
Samsung Nand
tbga 6x8 Package
WSOP48
bga 6x8
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"nand flash memory"
Abstract: KM29N040 KM29N040IT KM29N040T
Text: FLASH MEMORY KM29N040T, KM29N040IT Document Title 512K x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet 1997. April 10th 1997 1.0 Data Sheet 1998. April 10th 1998 1.1 Data Sheet 1998. July 14th 1998 Remark Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to cha nge the
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KM29N040T,
KM29N040IT
"nand flash memory"
KM29N040
KM29N040IT
KM29N040T
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IC 4093
Abstract: K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9F1208Q0B-D K9F1208U0B K9F1208U0B-D K9F1208U0B-V K9F1208U0B-Y
Text: K9F1208Q0B K9F1208D0B K9F1208U0B Advance FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark Apr. 24th 2004 Advance Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
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K9F1208Q0B
K9F1208D0B
K9F1208U0B
IC 4093
K9F1208D0B
K9F1208D0B-D
K9F1208D0B-Y
K9F1208Q0B
K9F1208Q0B-D
K9F1208U0B
K9F1208U0B-D
K9F1208U0B-V
K9F1208U0B-Y
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SAMSUNG K9F1208U0B
Abstract: K9F1208* technical K9F1208U0B K9F1208U0B-YCB0 K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9F1208Q0B-D K9F1208U0B-D
Text: K9F1208Q0B K9F1208D0B K9F1208U0B Advance FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark Aug. 24th 2003 Advance Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
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K9F1208Q0B
K9F1208D0B
K9F1208U0B
SAMSUNG K9F1208U0B
K9F1208* technical
K9F1208U0B
K9F1208U0B-YCB0
K9F1208D0B
K9F1208D0B-D
K9F1208D0B-Y
K9F1208Q0B
K9F1208Q0B-D
K9F1208U0B-D
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512M x 8 Bit NAND Flash Memory
Abstract: K9K1208U0A K9K1208U0A-VCB0 K9K1208U0A-VIB0
Text: K9K1208U0A-VCB0, K9K1208U0A-VIB0 FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Initial issue April. 17 2001 Remark Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
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K9K1208U0A-VCB0,
K9K1208U0A-VIB0
K9K1208U0A-Vnever
48-PIN
1217F
50TYP
512M x 8 Bit NAND Flash Memory
K9K1208U0A
K9K1208U0A-VCB0
K9K1208U0A-VIB0
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130001 power transistor
Abstract: Real Time "ECC" K9F2808U0B A10A11
Text: Preliminary FLASH MEMORY K9F2808U0B-BCB0 Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark March 1’st 2001 Preliminary Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
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K9F2808U0B-BCB0
48-Ball
08MAX
130001 power transistor
Real Time "ECC"
K9F2808U0B
A10A11
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Untitled
Abstract: No abstract text available
Text: K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Apr. 7th 2001 Final Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
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K9K1G08U0M-YCB0,
K9K1G08U0M-YIB0
K9K1G08U0M-YCB0
48-Pin
1220F
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29V040
Abstract: No abstract text available
Text: KM29V040T, KM29V040IT FLASH MEMORY Document Title 512K x 8 Bit NAND Flash Memory Revision History Ftevfrfon Np, History Draft Date 0.0 Data Sheet 1997. April 10th 1997 1.0 Data Sheet 1998. April 10th 1998 Remark The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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OCR Scan
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KM29V040T,
KM29V040IT
29V040
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY KM29W32000T, KM29W32000IT 4M X 8 Bit NAND Flash Mem ory History D raft Date R e m a rk 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final Revision No. The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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OCR Scan
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PDF
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KM29W32000T,
KM29W32000IT
KM29V32000
KM29N32000
KM29W32000
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Untitled
Abstract: No abstract text available
Text: KM29W16000AT, KM29W16000AIT FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. H istory Draft Date Rem ark 0.0 Initial issue. April 10th 1998 Preliminary 1.1 Data Sheet 1998. July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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OCR Scan
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KM29W16000AT,
KM29W16000AIT
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