NEC D2732
Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
Text: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256
|
Original
|
PDF
|
71C256
53C256
81C1000
71C1000
4C1024
81C4256
71C4256
4C4256
71C4400
4C4001
NEC D2732
41C1000
41256
6264 SRAM
44256 dram
NEC 2732
nec 4217400
814400
Texas Instruments eprom 2732
|
MSM 6290
Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+
|
Original
|
PDF
|
2147-35C
7C147-35C
27S03M
54S189M
7C170A-45M
7C170A-35M
2147-45C
27S07AC
7C190-25C
MSM 6290
msm 5562
27c256 intel
62c512
AP 2068
27C512 microchip
62256
57C256
27C512 SGS-THOMSON
27C512-150
|
EPM5128LC
Abstract: EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1 5962-8867812rx
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 5962-8753903LX 5962-8753902LX CY21L49-55C CY21L49-45C CY7C281 CY7C281A 5962-8863701LX 5962-8753902LX CY6116A-45C CY6116A-35C CY7C286 CY27H512 5962-8867003LX 5962-8867002LX CY6116A-55C CY6116A-45C
|
Original
|
PDF
|
5962-8753903LX
5962-8863701LX
5962-8867003LX
5962-8867809RX
5962-8867809XX
5962-8867810RX
5962-8867811RX
5962-8867812RX
5962-8871309RX
5962-8871310RX
EPM5128LC
EPM5128GC
epm5064lc-1
EPM5128LC1
59628867809r
5962-8984106LX
EPM5128GI
7C19945DMB
EPM5130GC-1
|
ATPA
Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C
|
Original
|
PDF
|
CY2147-35C
CY7C147-35C
CY7C147-45C
CY91L22-35C
CY7C122-35C
CY2147-45C
CY7C148-35C
CY7C148-25C+
ATPA
7130SA100P
24l01
7C263/4-35C
7164S15Y
cy9122-25
7133SA35J
7142sa55
7130sa55p
cy2149-45c
|
27HC642
Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+
|
Original
|
PDF
|
2147-35C
7C147-35C
27S03M
54S189M
7C170A-45M
7C170A-35M
2147-45C
27S07AC
7C190-25C
27HC642
39C10B
PAL22V10APC
CY2254SC-1
7132SA70
93L422AM
7024S15
7130SA25
7C198-45C
7006S
|
EPM5128LC
Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C
|
Original
|
PDF
|
CY2148-35C
CY21L48-35C
CY7C168A-35C
CY7C168A-25C
5962-8871309XX
5962-89839112X
CY7C148-35C
CY7C168A-45M
CY7C168A-35M+
EPM5128LC
IDT CYPRESS CROSS REFERENCE clocks
epm5064lc-1
EPM5128LC-1
EPM5064LC
EPM5128LC-2
EPM5128GI
EPM5128JC-1
8464c
5962-8871309
|
SG1027RD351293-HA
Abstract: SG1027RD351293 SG1027RD351293-SB
Text: SG1027RD351293UU August 17, 2010 Ordering Information Part Numbers Description Device Vendor SG1027RD351293HA 1Gx72 8GB , DDR3, 240-pin Registered DIMM with Heat- Hynix, Rev. A spreader, Parity, ECC, 512Mx4 Based, PC3-10600, DDR3- H5TQ2G43AFR-H9C 1333-999, 30.00mm, Green Module (RoHS Compliant).
|
Original
|
PDF
|
SG1027RD351293UU
SG1027RD351293HA
1Gx72
240-pin
512Mx4
PC3-10600,
H5TQ2G43AFR-H9C
SG1027RD351293HB
SG1027RD351293-HA
SG1027RD351293
SG1027RD351293-SB
|
S3C6410
Abstract: S3C6430 samsung S3C6410 S3C6400 Samsung S3C6410 ARM Samsung MCP ARM 1176 1176JZF-S AC97 Samsung S ARM
Text: Samsung S3C 6410 A R M 1176-b ased M o b ile A p p lic a tio n Processor Product Brief From smartphones to personal navigation devices, the Samsung ARM 1176based S3C6410 Mobile Application Processor supports the requirements of a broad array of applications. The S3C6410 is both pin and software compatible
|
OCR Scan
|
PDF
|
S3C6410
1176-based
S3C6400
S3C6430
S3C640G
samsung S3C6410
Samsung S3C6410 ARM
Samsung MCP
ARM 1176
1176JZF-S
AC97
Samsung S ARM
|
S3c6410
Abstract: Samsung S3C6410 ARM samsung S3C6410 S3C6430 S3C64 s3c6400 samsung s3c6400 s3c*6410 S3C641 S3C643
Text: Samsung S3C 6410 A R M 1176-b ased M o b ile A p p lic a tio n Processor Product Brief From smartphones to personal navigation devices, the Samsung ARM 1176based S3C6410 Mobile Application Processor supports the requirements of a broad array of applications. The S3C6410 is both pin and software com patible
|
OCR Scan
|
PDF
|
S3C6410
1176-based
S3C6410
S3C6400
S3C6430
S3C640G
Samsung S3C6410 ARM
samsung S3C6410
S3C64
samsung s3c6400
s3c*6410
S3C641
S3C643
|
Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • T 'ib M m E D C IlTfafel 41T ■ CMOS SRAM KM641005 256K X 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.)
|
OCR Scan
|
PDF
|
KM641005
KM641005P/J-20:
150mA
KM641005P/J-25:
130mA
KM641005P/J-35:
110mA
KM641005P:
32-pin
400mil)
|
KM641003J-15
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • T'ïbMlMS D a i 7 h S 5 TSS ■ ISJ16K PRELIMINARY CMOS SRAM KM641003 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL)
|
OCR Scan
|
PDF
|
KM641003
KM641003J-15:
170mA
KM641003J-17:
160mA
KM641003J-20:
150mA
KM641003J:
32-Pin
KM641003
KM641003J-15
|
41C1000
Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258
|
OCR Scan
|
PDF
|
41C256
41C257
41C258
41C464
41C466
41C1000
44C256
44C258
44C1002
TC51257
fujitsu 814100
TC 55464 toshiba
HN62304
hn623257
658128
816b
hn62324
M7202A
|
Untitled
Abstract: No abstract text available
Text: CMOS VIDEO RAM ÍM424C64 6 4 K X 4 Bit CMOS VIDEO RAM FEATURES GENERAL DESCRIPTION • Dual Port A rchitecture 64K x 4 bits R AM port The Samsung KM424C64 is a CMOS 64K x 4 bit Dual Port DRAM. It consists of a 6 4 K x 4 dynamic random access memory RAM port and 256 x 4 static serial •
|
OCR Scan
|
PDF
|
M424C64
KM424C64
KM424C64
24-PIN
|
Untitled
Abstract: No abstract text available
Text: CMOS VIDEO RAM KM424C64 6 4 K X 4 Bit CMOS VIDEO RAM FEATURES GENERAL DESCRIPTION • Dual Port Architecture 64K x 4 bits RAM port 256 x 4 bits SAM port • Performance range: The Samsung KM424C64 is a CMOS 64K x 4 bit Dual Port DRAM. It c o n s is ts o f a 6 4 K x 4 dynam ic random
|
OCR Scan
|
PDF
|
KM424C64
KM424C64
24-PIN
|
|
M641005
Abstract: No abstract text available
Text: KM641005 CMOS SRAM 256K X 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 20 ,25,35ns max. • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS) : 2m A (max.) Operating KM641005P/J-20: 150m A (max) K M641005P/J-25: 130m A (max)
|
OCR Scan
|
PDF
|
KM641005
KM641005P/J-20:
M641005P/J-25:
M641005P/J-35:
KM641005P:
32-pin
641005J:
M641005
|
Untitled
Abstract: No abstract text available
Text: Preliminary CMOS SRAM KM641003B/BL, KM641003BI/BLI Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark
|
OCR Scan
|
PDF
|
KM641003B/BL,
KM641003BI/BLI
256Kx4
32-SO
J-400
32-TSO
P2-400F
|
Untitled
Abstract: No abstract text available
Text: KM641003A, KM641003AI CMOS SRAM Document Title 256Kx4 High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.
|
OCR Scan
|
PDF
|
KM641003A,
KM641003AI
256Kx4
12/15/17/20ns
200/190/180/170mA
150/145/145/140mA
32-SOJ-400
|
KM424C64
Abstract: KM424C64P
Text: CMOS VIDEO RAM KM424C64 6 4 K X 4 Bit CMOS VIDEO RAM FEATURES GENERAL DESCRIPTION • Dual Port Architecture 64K x 4 bits RAM port 256 x 4 bits SAM port • Performance range: -1 0 -1 2 RAM access tim e t^Ac 100ns 120ns RAM access tim e (Icac) 25ns 30ns
|
OCR Scan
|
PDF
|
KM424C64
100ns
180ns
120ns
220ns
KM424C64
24-PIN
KM424C64P
|
Untitled
Abstract: No abstract text available
Text: KM641003B CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.
|
OCR Scan
|
PDF
|
KM641003B
256Kx4
8/10/12nsafter
32-SOJ-400
|
Untitled
Abstract: No abstract text available
Text: KM641001B CMOS SRAM Document Tills 256Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target. Feb. 1st, 1997 R ev.1.0 Release to Prelim inary Data Sheet.
|
OCR Scan
|
PDF
|
KM641001B
256Kx4
120mA
110mA
100mA
118mA
28-SOJ-400A
|
Untitled
Abstract: No abstract text available
Text: CMOS VIDEO RAM KM424C64 6 4 K X 4 Bit CMOS VIDEO RAM FEATURES GENERAL DESCRIPTION • Dual Port Architecture 64K x 4 bits RAM port 256 x 4 bits SAM port • Performance range: -1 0 item RAM access tim e tRAc -1 2 120ns 100ns 25ns 30ns 180ns 220ns RAM Page mode cycle (tPC)
|
OCR Scan
|
PDF
|
KM424C64
120ns
100ns
180ns
220ns
KM424C64
24-PIN
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY CMOS SRAM KM641003C Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating) Revision History Rev. No. History Draft Data Rev. 0.0 Initial Draft Aug. 5. 1998 Remark Prelim inary The attached data sheets are prepared and approved by SAM SUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the
|
OCR Scan
|
PDF
|
KM641003C
256Kx4
32-SOJ-400
|
Untitled
Abstract: No abstract text available
Text: CMOS SRAM KM641001A Document Title 256Kx 4 High Speed Static RAM 5V Operating , Evolutionary Pin Out. Operated at Commercial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995 Design Target Rev. 1.0
|
OCR Scan
|
PDF
|
KM641001A
256Kx
15/17/20ns
190/180/170m
12/12/13ns
8/9/10ns
|
Untitled
Abstract: No abstract text available
Text: KM641003A CMOS SRAM Document Title 256Kx4 High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary. Apr. 22th, 1995
|
OCR Scan
|
PDF
|
KM641003A
256Kx4
12/15/17/20ns
200/190/180/170m
150/145/145/140m
32-SOJ-400
|