Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    S9012 TRANSISTOR Search Results

    S9012 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    S9012 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S9012H

    Abstract: transistor s9012h S9012G S9012H TO-92 transistor s9012 S9012-G gunze touch 8 wire Collector-current 0.5a To-92
    Text: MCC S9012 S9012-G S9012-H S9012-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S9012 S9012-G S9012-H S9012-I 625Watts -55OC S9012H transistor s9012h S9012G S9012H TO-92 transistor s9012 S9012-G gunze touch 8 wire Collector-current 0.5a To-92

    S9012H

    Abstract: transistor s9012 transistor s9012h S9012 data sheet S9012 equivalent S9012 DATASHEET S9012 To92 transistor S9012H TO-92
    Text: MCC S9012 S9012-G S9012-H S9012-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S9012 S9012-G S9012-H S9012-I 625Watts -55OC S9012H transistor s9012 transistor s9012h S9012 data sheet S9012 equivalent S9012 DATASHEET S9012 To92 transistor S9012H TO-92

    S9012H

    Abstract: transistor s9012h S9012G S9012
    Text: MCC S9012 S9012-G S9012-H S9012-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S9012 S9012-G S9012-H S9012-I 625Watts -55OC S9012H transistor s9012h S9012G

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components S9012-G S9012-H S9012-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S9012-G S9012-H S9012-I 625Watts -55OC S9012

    transistor s9012

    Abstract: s9012 transistor S9012
    Text: S9012 S9012 TRANSISTOR PNP TO-92 FEATURE Power dissipation 1. EMITTER 2. BASE PCM: 0.625 W (Tamb=25℃) 3. COLLECTOR Collector current ICM: -0.5 A Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range Tj, Tstg: 1 2 3 -55℃ to +150℃


    Original     		PDF S9012 -500mA -50mA -20mA, 30MHz transistor s9012 s9012 transistor S9012

    S9012 to-92

    Abstract: S9012H transistor s9012h
    Text: MCC TM Micro Commercial Components S9012-G S9012-H S9012-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S9012-G S9012-H S9012-I 625Watts -55OC S9012 100uAdc, S9012 to-92 S9012H transistor s9012h

    S9012H

    Abstract: transistor s9012h S9012 to-92
    Text: MCC TM Micro Commercial Components S9012-G S9012-H S9012-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S9012-G S9012-H S9012-I 625Watts -55OC S9012 S9012H transistor s9012h S9012 to-92

    transistor s9012h

    Abstract: S9012H S9012H TO-92
    Text: MCC S9012-G S9012-H S9012-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S9012-G S9012-H S9012-I 625Watts -55OC S9012 transistor s9012h S9012H S9012H TO-92

    S9012

    Abstract: S9012H
    Text: MCC S9012-G S9012-H S9012-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S9012-G S9012-H S9012-I 625Watts -55OC S9012 S9012H

    transistor s9012

    Abstract: S9012 H14-4 S9012 to-92 S9012 TO92 S9012 data sheet S9013 S9013 to-92 s9013 transistor transistor TO-92 S9013
    Text: S9012 PNP EPITAXIAL SILICON TRANSISTOR General Purpose Application TO-92 Collector Current Ic=-500mA Collector Power Dissipation Pc=625mW Complementary to S9013 Ta=25oC ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Value Unit Collector-Base Voltage VCBO


    Original     		PDF S9012 -500mA 625mW S9013 -50mA -500mA -50mA transistor s9012 S9012 H14-4 S9012 to-92 S9012 TO92 S9012 data sheet S9013 S9013 to-92 s9013 transistor transistor TO-92 S9013

    s9013 transistor

    Abstract: transistor S9013 S9013 transistor TO-92 S9013 S9013 TO92 data sheet transistor s9013 S9012
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR


    Original     		PDF S9013 S9012 500mA 500mA, 30MHz S9013 s9013 transistor transistor S9013 transistor TO-92 S9013 S9013 TO92 data sheet transistor s9013 S9012

    transistor s9012

    Abstract: S9012 S9012 equivalent Transistor S9013 S9013 S9012 to-92
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors S9012 TO-92 TRANSISTOR PNP FEATURES Complementary to S9013 z Excellent hFE linearity 1. EMITTER z 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF S9012 S9013 -500mA -500mA, -50mA -20mA 30MHz transistor s9012 S9012 S9012 equivalent Transistor S9013 S9013 S9012 to-92

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS Ta=25℃ unless otherwise noted 3. COLLECTOR


    Original     		PDF S9013 S9012 500mA 500mA, 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9012 TRANSISTOR PNP FEATURES z Complementary to S9013 z Excellent hFE linearity 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 S9012 S9013 -50mA -500mA, -20mA

    s9013 transistor

    Abstract: S9013 transistor S9013 f-30MHz transistor s9012
    Text: S9013 Transistor NPN TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features — Complementary to S9012 Excellent hFE linearity — MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO VEBO Collector-Emitter Voltage


    Original     		PDF S9013 S9012 500mA 500mA, 30MHz s9013 transistor S9013 transistor S9013 f-30MHz transistor s9012

    s9013 transistor

    Abstract: J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz s9013 transistor J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9012 TRANSISTOR PNP FEATURES z Complementary to S9013 z Excellent hFE linearity 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 S9012 S9013 -50mA -500mA, -20mA

    S9013 SOT-23

    Abstract: J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23
    Text: S9013 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


    Original     		PDF S9013 OT-23 OT-23 S9012 500mA 500mA, 30MHz S9013 SOT-23 J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23

    transistor s9012

    Abstract: S9012 2T1 SOT-23 S9012 SOT-23 S9012 SOT23 S9012 2T1 SOT-23 2t1 transistor S9013 SOT23 S9013 SOT-23 s9012 transistor
    Text: S9012 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to S9013 Excellent hFE linearity — MARKING: 2T1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Value Units Collector-Base Voltage


    Original     		PDF S9012 OT-23 OT-23 S9013 -100A, -50mA -500mA, transistor s9012 S9012 2T1 SOT-23 S9012 SOT-23 S9012 SOT23 S9012 2T1 SOT-23 2t1 transistor S9013 SOT23 S9013 SOT-23 s9012 transistor

    transistor s9012

    Abstract: S9012 s9012 transistor S9012 equivalent S9012 SOT-23 S9013 SOT-23 S9013 S9012 2T1 S9012 2T1 SOT-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9012 TRANSISTOR PNP FEATURES z Complementary to S9013 z Excellent hFE linearity 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 S9012 S9013 -50mA -500mA, -20mA transistor s9012 S9012 s9012 transistor S9012 equivalent S9012 SOT-23 S9013 SOT-23 S9013 S9012 2T1 S9012 2T1 SOT-23

    S9013 J3

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz S9013 J3

    transistor s9012

    Abstract: S9012
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD T TO-92 Plastic-Encapsulate Transistors S9012 TO-92 TRANSISTOR PNP FEATURES Complementary to S9013 z Excellent hFE linearity 1. EMITTER z 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF S9012 S9013 transistor s9012 S9012

    PFNI S9012

    Abstract: S9012 IC-500 S9012 2T1 pfni
    Text: 1 S9012 COLLECTOR PN P General Purpose Transistors 4 % V 2v SOT-23 ra rrrrn MAXIMUM RATINGS Rating | Characteristics Value Symbol Collector-Emitter Voltage | Collector-Base Voltage Emitter-Base VOItage_ Collector Current-Continuous 1


    OCR Scan     		PDF S9012 TA-25t TA-25 S9012 ICF-500 -50mAdc) IC-500 100mA) 30MHz) PFNI S9012 S9012 2T1 pfni

    Untitled

    Abstract: No abstract text available
    Text: | FORWARD INTERNATIONAL ELECTRONICS LID. S9013 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. Package: TO-92 * Complement to S9012 * Collector Current: Ic=500mA * High Total Power Dissipation: ptH>25mW


    OCR Scan     		PDF S9013 S9012 500mA 100uA 500mA