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    S806 Search Results

    S806 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    932S806CGLF Renesas Electronics Corporation Clock Chip for 2 and 4-way AMD K8-based servers Visit Renesas Electronics Corporation
    932S806CGLFT Renesas Electronics Corporation Clock Chip for 2 and 4-way AMD K8-based servers Visit Renesas Electronics Corporation
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    S806 Price and Stock

    RUNIC RS806-4.00YF5

    IC SUPERVISOR 1 CHANNEL SOT23-5
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    RUNIC RS806-3.08YF5

    IC SUPERVISOR 1 CHANNEL SOT23-5
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    RS806-3.08YF5 Cut Tape 6,000 1
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    Amphenol Advanced Sensors YQS8065

    PTC RESET FUSE 265V 168MA RADIAL
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    DigiKey YQS8065 Bulk 5,798 1
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    RS YQS8065 Bulk 1,500
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    Mallory Sonalert Products Inc MAS806Q

    BUZZER PIEZO 12V 26MM TH
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    DigiKey MAS806Q Box 3,776 1
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    Mouser Electronics MAS806Q 572
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    RS MAS806Q Bulk 1
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    Master Electronics MAS806Q 50
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    Sager MAS806Q 1
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    Taiwan Semiconductor SFAS806GH

    DIODE GEN PURP 400V 8A TO263AB
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    SFAS806GH Cut Tape 1,600 1
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    SFAS806GH Digi-Reel 1,600 1
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    Avnet Americas SFAS806GH Reel 12 Weeks 1,600
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    S806 Datasheets (113)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S-8-06 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    S8-06 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    S-8-06 Origin Electric Silicon Rectifying Diodes Scan PDF
    S-806 Seiko Instruments VOLTAGE DETECTOR Scan PDF
    S8060B Laird Technologies IAS Uncategorized - Miscellaneous - OMNI POLMNT 17IN NF Original PDF
    S8063B Laird Technologies IAS Uncategorized - Miscellaneous - OMNI POLMNT 23IN 806-866MHZ 5DBI Original PDF
    S8064 Hamamatsu Original PDF
    S8064 Hamamatsu Photonics Photo IC designed for near/far distance detection Original PDF
    S8064B Laird Technologies IAS Uncategorized - Miscellaneous - OMNI POLMNT 23IN NF Original PDF
    S8065 Littelfuse ILICON CONTROLLED RECTIFIER,800V V Original PDF
    S8065J Littelfuse SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA Original PDF
    S8065J Teccor Electronics SCRs Original PDF
    S8065J Teccor Electronics SCRs (1 - 70 Amps) Original PDF
    S8065J Teccor Electronics Cross Reference Data to Teccor Part Numbers (See datasheet appendix) Original PDF
    S8065JTP Littelfuse SCRs - Single, Discrete Semiconductor Products, SCR NON-SENS 800V 65A ISO TO218X Original PDF
    S8065JV Teccor Electronics SCR Original PDF
    S8065K Littelfuse SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA Original PDF
    S8065K Unknown Thyristor, insulated, 800V 65A IGT<50mA, Thyristor Original PDF
    S8065K Teccor Electronics SCRs (1 - 70 Amps) Original PDF
    S8065K Teccor Electronics Cross Reference Data to Teccor Part Numbers (See datasheet appendix) Original PDF

    S806 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    s8065j

    Abstract: No abstract text available
    Text: Part: S8065J Series: Teccor SCR Devices Technology:SCRs PARAMETERS Package Type Pkg Type Radial Leaded Mount Method Mount Through hole Critical Rate-of-rise of On-state Current di/dt A/µs 200 Critical rate-of-rise of applied forward voltage dv/dt @ 100°C V/µs


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    S8065J O-218x PDF

    Untitled

    Abstract: No abstract text available
    Text: 1/12 2-zone LightLight-Modulation PhotoIC for object detection Technical notes S8030,S8064,S8064-10 Preliminary SSD 2000. 7. 5 1. Range finding of an object independent of the reflectance or the color The 2-zone Light-Modulation PhotoIC was developed as a range-finding sensor. Conventional


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    S8030 S8064 S8064-10 443us 224us. 203us 224us 443us PDF

    dual photodiode

    Abstract: photodiode "far infrared" S8030 KPIC1028E01 S8064 SE-171
    Text: PHOTO IC Photo IC for rangefinder NEW S8030, S8064 Photo IC designed for near/far distance detection S8030 and S8064 are light modulation photo ICs consisting of a dual photodiode and a control/processing circuit. When used with an infrared LED and light emitting/receiving lenses, these photo ICs detect the distance near or far to an object at a certain


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    S8030, S8064 S8030 S8064 SE-171 KPIC1028E01 dual photodiode photodiode "far infrared" KPIC1028E01 PDF

    photodiode "far infrared"

    Abstract: dual photodiode S8030 KPIC1028E01 S8064 SE-171 S-8030
    Text: PHOTO IC Photo IC for rangefinder S8030, S8064 Photo IC designed for near/far distance detection S8030 and S8064 are light modulation photo ICs consisting of a dual photodiode and a control/processing circuit. When used with an infrared LED and light emitting/receiving lenses, these photo ICs detect the distance near or far to an object at a certain


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    S8030, S8064 S8030 S8064 SE-171 KPIC1028E01 photodiode "far infrared" dual photodiode KPIC1028E01 S-8030 PDF

    S8065K

    Abstract: No abstract text available
    Text: Part: S8065K Series: Teccor SCR Devices Technology:SCRs PARAMETERS Package Type Pkg Type Radial Leaded Mount Method Mount Through hole Critical Rate-of-rise of On-state Current di/dt A/µs 200 Critical rate-of-rise of applied forward voltage dv/dt @ 100°C V/µs


    Original
    S8065K O-218 PDF

    Si2315BDS-T1-E3

    Abstract: No abstract text available
    Text: Si2315BDS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available • TrenchFET Power MOSFETs: 1.8 V Rated RDS(on) (Ω) ID (A) 0.050 at VGS = - 4.5 V - 3.85 0.065 at VGS = - 2.5 V - 3.4 RoHS*


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    Si2315BDS O-236 OT-23) Si2315BDS-T1 Si2315BDS-T1-E3 Si2315BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC PDF

    S6025

    Abstract: S1055M S8025 S4008 S0525 S4025 SCR S1055m S8055R S1070W S6020
    Text: * es D ag ZE k I c Pa GN 9 d O te 63 c le EC E71 e S .R e# .L Fil U TO-92 TO-218AC TO-202AB TO-218X A THERMOTAB TO-220AB K G SCRs 1 – 70 Amps 6 General Description Variations of devices covered in this data sheet are available for custom design applications. Please consult the factory for more


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    O-218AC O-202AB O-218X O-220AB tec20 S6025 S1055M S8025 S4008 S0525 S4025 SCR S1055m S8055R S1070W S6020 PDF

    Si3407DV

    Abstract: No abstract text available
    Text: New Product Si3407DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0240 at VGS = - 4.5 V - 8.0a 0.0372 at VGS = - 2.5 V a - 8.0 • • • • Qg (Typ.) 21 nC TrenchFET Power MOSFET PWM Optimized


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    Si3407DV Si3407DV-T1-E3 08-Apr-05 PDF

    Si2304BDS

    Abstract: Si2304BDS-T1-E3
    Text: Si2304BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free Option Available Qg (Typ.) RoHS 2.6 COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View


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    Si2304BDS O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 11-Mar-11 PDF

    SUM75N15-18P-E3

    Abstract: No abstract text available
    Text: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch


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    SUM75N15-18P O-263 SUM75N15-18P-E3 08-Apr-05 SUM75N15-18P-E3 PDF

    Si6463BDQ

    Abstract: No abstract text available
    Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


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    Si6463BDQ Si6459BDQ-T1-GE3 08-Apr-05 PDF

    SC-89

    Abstract: Si1026X
    Text: Si1026X Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS(min) (V) RDS(on) (Ω) VGS(th) (V) ID (mA) 60 1.40 at VGS = 10 V 1 to 2.5 500 • Halogen-free Option Available • Low On-Resistance: 1.40 Ω RoHS • Low Threshold: 2 V (typ.)


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    Si1026X SC-89 08-Apr-05 SC-89 PDF

    72511

    Abstract: Si6433BDQ
    Text: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7


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    Si6433BDQ Si6433BDQ-T1-GE3 11-Mar-11 72511 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si6441DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.015 at VGS = - 10 V -8 0.024 at VGS = - 4.5 V - 6.4 • Halogen-free • TrenchFET Power MOSFET RoHS APPLICATIONS COMPLIANT • Battery Switch


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    Si6441DQ Si6441DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    S4020L

    Abstract: thyristor k 202 s6015l S6010 SCR S6025L s6065k E617 thyristor T 218 N S2006L S2006V
    Text: s ge ka * L. U. ED Z NI G 39 CO 716 E R #E ed ct le Se c Pa Fi le E6 TO-263 D 2 Pak TO-92 *TO-218 TO-252 D-Pak TO-202 *TO-218X 3-lead Compak *TO-220 TO-251 V-Pak A K G SCRs 1 A to 70 A E6 General Description The Teccor line of thyristor SCR semi-conductors are half-wave,


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    O-263 O-218 O-252 O-202 O-218X O-220 O-251 S4020L thyristor k 202 s6015l S6010 SCR S6025L s6065k E617 thyristor T 218 N S2006L S2006V PDF

    Si2306BDS

    Abstract: Si2306BDS-T1-E3 Si2306BDS-T1-GE3
    Text: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0


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    Si2306BDS O-236 OT-23) Si2306BDS-T1-E3 Si2306BDS-T1-GE3 11-Mar-11 PDF

    tsc4429

    Abstract: TSC7660 TSC7107 TSC7106 TSC7109 TSC7117 TSC1426 TSC7650 tsc4427 lt1174
    Text: Code Key: PU – PP – FE – SP – Plug-In Upgrade Pin-for-Pin Compatible Functional Equivalent Similar Part AMCC MAXIM S3005 S3006 S3017 S3023 S3024 S3025 S3026 S3027 S3028B S3033 S3040 S3043 S3044 S3047 S3049 S3050 MAX3690 MAX3680 MAX3690 MAX3675 MAX3675


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    S3005 S3006 S3017 S3023 S3024 S3025 S3026 S3027 S3028B S3033 tsc4429 TSC7660 TSC7107 TSC7106 TSC7109 TSC7117 TSC1426 TSC7650 tsc4427 lt1174 PDF

    MOSFET TSSOP-8

    Abstract: SI6410DQ
    Text: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D


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    Si6410DQ Si6410DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MOSFET TSSOP-8 PDF

    e616

    Abstract: SK040R ES35A SK025N S4010R
    Text: s ge ka * L. U. ED Z NI G 39 CO 716 E R #E ed ct le Se c Pa Fi le E6 TO-263 D 2 Pak TO-92 *TO-218 TO-252 D-Pak TO-202 *TO-218X 3-lead Compak *TO-220 TO-251 V-Pak A K G SCRs 1 A to 70 A E6 General Description The Teccor line of thyristor SCR semi-conductors are half-wave,


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    O-263 O-218 O-252 O-202 O-218X O-220 O-251 e616 SK040R ES35A SK025N S4010R PDF

    1A20A

    Abstract: teccor thyristor s8015l e526 E521 S2008L S4010R
    Text: * ess* D aagge ZEED k c k IIZ Paac N d P GN 9 teted OOG166339 c leec ECC 771 SSeel . RRE ##EE L . iliele U.L FF E6 U TO-263 D 2 Pak TO-92 TO-218 TO-252 D-Pak TO-202 TO-218X A 3-Leaded Surface Mount Compak K TO-220 TO-251 V-Pak G SCRs 1 A to 70 A E5 General Description


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    O-263 O-218 O-252 O-202 O-218X O-220 O-251 1A20A teccor thyristor s8015l e526 E521 S2008L S4010R PDF

    teccor thyristor s4015l

    Abstract: thyristor S6065K SK055R S8040N thyristor 325 V 8A ,THYRISTOR s2065j s401e Thyristor thyristor S8020L SK025N S4010R
    Text: l Se ec ag * es ED Z NI G 39 CO 716 E R #E te L. U. k ac d P le Fi E6 TO-263 D 2 Pak TO-92 TO-218 TO-252 D-Pak TO-202 TO-218X 3-Leaded Surface Mount Compak TO-220 MT2 MT1 TO-251 V-Pak G SCRs 1 A to 70 A E6 General Description The Teccor line of thyristor SCR semi-conductors are half-wave,


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    O-263 O-218 O-252 O-202 O-218X O-220 O-251 teccor thyristor s4015l thyristor S6065K SK055R S8040N thyristor 325 V 8A ,THYRISTOR s2065j s401e Thyristor thyristor S8020L SK025N S4010R PDF

    SI2306BDS-T1-E3

    Abstract: Si2306BDS-T1-GE3 SI2306 Si2306BDS
    Text: Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.047 at VGS = 10 V 4.0 0.065 at VGS = 4.5 V 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.0


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    Si2306BDS O-236 OT-23) Si2306BDS-T1-E3 Si2306BDS-T1-GE3 18-Jul-08 SI2306 PDF

    Si1056X

    Abstract: SC-89
    Text: Si1056X Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.089 at VGS = 4.5 V 1.32 0.098 at VGS = 2.5 V 1.26 0.121 at VGS = 1.8 V Qg (Typ.) • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested


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    Si1056X SC-89 Si1056X-T1-E3 Si1056X-T1-GE3 18-Jul-08 SC-89 PDF

    S5500G

    Abstract: S-8-08FR S-8R-06FR S5103 S5166 S5500D S5102 S5104 S-8R-01FR S5277D
    Text: - m % S5102 S5103 S5104 S5166 S5277B S5277D S5277G S5277J S5277L S5277N S529SB S5295D S5295G S5295J S5500B S5500D S5500G S5566B S5566G S5566J S5566N S5688B S5688G S5688J S5688N S-8 -01 S-8-01FR S -8 -02 S-8-02FR S -8 -04 S-8-04FR S -8 -06 S-8-06FR S-8 -08


    OCR Scan
    S5102 S5103 S5104 S5166 S5277B S5277D S5277G S5277J S5277L S527TN S5500G S-8-08FR S-8R-06FR S5166 S5500D S5102 S5104 S-8R-01FR PDF