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    SOURIAU-SUNBANK UTS7106S

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    DigiKey UTS7106S Bag 124 1
    • 1 $16.13
    • 10 $12.41
    • 100 $9.6924
    • 1000 $7.73311
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    Mouser Electronics UTS7106S 207
    • 1 $14.95
    • 10 $11.23
    • 100 $9.69
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    Newark UTS7106S Bulk 41 1
    • 1 $13.41
    • 10 $11.52
    • 100 $10.6
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    RS UTS7106S Bulk 201 1
    • 1 $15.1
    • 10 $13.89
    • 100 $11.63
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    PEI Genesis C48-16R12-12S7-106

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    DigiKey C48-16R12-12S7-106 Bulk 117 1
    • 1 $51.25
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    • 100 $34.91
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    PEI Genesis C48-16R12-3S7-106

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    DigiKey C48-16R12-3S7-106 Bulk 81 1
    • 1 $55.06
    • 10 $48.83
    • 100 $37.5
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    PEI Genesis C48-16R10-5S7-106

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    DigiKey C48-16R10-5S7-106 Bulk 33 1
    • 1 $61.04
    • 10 $54.13
    • 100 $41.58
    • 1000 $41.58
    • 10000 $41.58
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    Schurter Electronic Components TS-710-6

    CIR BRKR THRM 6A 250VAC 50VDC
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    DigiKey TS-710-6
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    S7106 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T4 1060

    Abstract: SST29EE512-70-4I-NHE 32-PIN SST29EE512
    Text: 512 Kbit 64K x8 Page-Write EEPROM SST29EE512 SST29EE512512Kb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE512 • Superior Reliability – Endurance: 100,000 Cycles (typical)


    Original     		PDF SST29EE512 SST29EE512512Kb S71060 S71060-09-000 T4 1060 SST29EE512-70-4I-NHE 32-PIN SST29EE512

    H 1061

    Abstract: SST29EE010 SST29VE010 SST29EE010-90-4C-NH
    Text: 1 Mbit 128K x8 Page-Write EEPROM SST29EE010 / SST29VE010 SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 2.7-3.6V for SST29VE010 • Superior Reliability


    Original     		PDF SST29EE010 SST29VE010 SST29EE VE0101Mb SST29EE010 S71061 S71061-11-000 H 1061 SST29VE010 SST29EE010-90-4C-NH

    SST29EE010

    Abstract: SST29EE010-70-4C-PHE transistor 1061 SST29VE010
    Text: 1 Mbit 128K x8 Page-Write EEPROM SST29EE010 / SST29VE010 SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 2.7-3.6V for SST29VE010 • Superior Reliability


    Original     		PDF SST29EE010 SST29VE010 SST29EE VE0101Mb SST29EE010 S71061 SST29EE010" SST29VE010" SST29EE010-70-4C-PHE transistor 1061 SST29VE010

    SST29EE512

    Abstract: id9301
    Text: 512 Kilobit 64K x8 Page-Mode EEPROM SST29EE512 / SST29LE512 / SST29VE512 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for SST29EE512 – 3.0-3.6V for SST29LE512 – 2.7-3.6V for SST29VE512 • Superior Reliability – Endurance: 100,000 Cycles (typical)


    Original     		PDF SST29EE512 SST29LE512 SST29VE512 SST29EE512 SST29LE512 MO-142 32-LEAD S71060 id9301

    SST29LE010

    Abstract: No abstract text available
    Text: 1 Mbit 128K x8 Page-Write EEPROM SST29LE010 SST29EE / LE / VE0101Mb (x8) Page-Write, Small-Sector flash memories EOL Product Data Sheet FEATURES: • Single Voltage Read and Write Operations – 3.0-3.6V for SST29LE010 • Superior Reliability – Endurance: 100,000 Cycles (typical)


    Original     		PDF SST29LE010 SST29EE VE0101Mb Inter10 SST29VE010 S71061-10-000 SST29VE010 S71061 S71061 SST29LE010

    TB-17

    Abstract: Si4642DY Si4642DY-T1-E3 74430
    Text: New Product Si4642DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES • SkyFET Monolithic TrenchFET Power PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.00375 at VGS = 10 V 34 0.0047 at VGS = 4.5 V 30 VDS (V) 30 Qg (Typ) MOSFET and Schottky Diode


    Original     		PDF Si4642DY Si4642DY-T1-E3 08-Apr-05 TB-17 74430

    Untitled

    Abstract: No abstract text available
    Text: SiP4610A/B Vishay Siliconix Protected 1-A High-Side Load Switch APPLICATIONS • Peripheral Ports FEATURES • • • • • • • 1 A Continuous Output Current 2.4 V to 5.5 V Supply Voltage Range User Settable Current Limit Level Low Quiescent Current


    Original     		PDF SiP4610A/B AAT4610A 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    SST29LE512

    Abstract: t103 tida1 SST29EE512 SST29VE512
    Text: 512 Kbit 64K x8 Page-Write EEPROM SST29EE512 / SST29LE512 / SST29VE512 SST29EE / LE / VE512512Kb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE512 – 3.0-3.6V for SST29LE512


    Original     		PDF SST29EE512 SST29LE512 SST29VE512 SST29EE VE512512Kb SST29EE512 SST29LE512 t103 tida1 SST29VE512

    SST29EE010

    Abstract: SST29LE010 SST29VE010
    Text: 1 Mbit 128K x8 Page-Write EEPROM SST29EE010 / SST29LE010 / SST29VE010 SST29EE / LE / VE0101Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 3.0-3.6V for SST29LE010


    Original     		PDF SST29EE010 SST29LE010 SST29VE010 SST29EE VE0101Mb SST29EE010 SST29LE010 32-pdip-PH-3 32-PIN SST29VE010

    GLS29EE512

    Abstract: GLS29EE512-70-4I-NH GLS29EE512-70-4I-NHE GLS29EE512-70-4C-NH GLS29EE512-70-4C-EHE 32-PIN GLS29EE512-70-4C-NHE GLS29EE512-70
    Text: 512 Kbit 64K x8 Page-Write EEPROM GLS29EE512 GLS29EE512512Kb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for GLS29EE512 • Superior Reliability – Endurance: 100,000 Cycles (typical)


    Original     		PDF GLS29EE512 GLS29EE512512Kb S71060-10-000 GLS29EE512 GLS29EE512-70-4I-NH GLS29EE512-70-4I-NHE GLS29EE512-70-4C-NH GLS29EE512-70-4C-EHE 32-PIN GLS29EE512-70-4C-NHE GLS29EE512-70

    SST29LE512

    Abstract: SST29VE512 SW2-301
    Text: 512 Kbit 64K x8 Page-Write EEPROM SST29LE512 / SST29VE512 SST29LE / VE512512Kb (x8) Page-Write, Small-Sector flash memories EOL Product Data Sheet FEATURES: • Single Voltage Read and Write Operations – 3.0-3.6V for SST29LE512 – 2.7-3.6V for SST29VE512


    Original     		PDF SST29LE512 SST29VE512 SST29LE VE512512Kb SST29LE512 SST29VE512 S71060-08-000 SST29VE010 S71061 SW2-301

    S71062

    Abstract: SST29EE020-120-4C-NH SST29EE020 SST29LE020 SST29VE020
    Text: 2 Mbit 256K x8 Page-Write EEPROM SST29EE020 / SST29LE020 / SST29VE020 SST29EE / LE / VE0202Mb (x8) Page-Write, Small-Sector flash memories EOL Product Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE020 – 3.0-3.6V for SST29LE020


    Original     		PDF SST29EE020 SST29LE020 SST29VE020 SST29EE VE0202Mb SST29EE020 SST29LE020 S71062 SST29EE020-120-4C-NH SST29VE020

    DG407B

    Abstract: DG406B S8-A marking DIODE marking S4 57 407b
    Text: DG406B/407B Vishay Siliconix 16-Ch/Dual 8-Ch High-Performance CMOS Analog Multiplexers DESCRIPTION FEATURES The DG406B is a 16-channel single-ended analog multiplexer designed to connect one of sixteen inputs to a common output as determined by a 4-bit binary address. The


    Original     		PDF DG406B/407B 16-Ch/Dual DG406B 16-channel DG407B 18-Jul-08 S8-A marking DIODE marking S4 57 407b

    SST29EE010

    Abstract: SST29LE010 SST29VE010
    Text: 1 Mbit 128K x8 Page-Write EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet SST29EE / LE / VE0101Mb Page-Write flash memories FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 3.0-3.6V for SST29LE010 – 2.7-3.6V for SST29VE010


    Original     		PDF SST29EE010 SST29LE010 SST29VE010 SST29EE VE0101Mb SST29EE010 SST29LE010 32-pdip-PH-3 32-PIN SST29VE010

    SST29EE010

    Abstract: SST29EE010-90-4I-NH SST29LE010 SST29VE010
    Text: 1 Megabit 128K x8 Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST29EE010 – 3.0-3.6V for the SST29LE010 – 2.7-3.6V for the SST29VE010 • Superior Reliability


    Original     		PDF SST29EE010 SST29LE010 SST29VE010 SST29EE010 SST29LE010 MO-142 32-LEAD S71061 SST29EE010-90-4I-NH SST29VE010

    SST29EE512

    Abstract: SST29LE512 SST29VE512
    Text: 512 Kbit 64K x8 Page-Write EEPROM SST29EE512 / SST29LE512 / SST29VE512 Data Sheet SST29EE / LE / VE512512Kb Page-Write flash memories FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE512 – 3.0-3.6V for SST29LE512 – 2.7-3.6V for SST29VE512


    Original     		PDF SST29EE512 SST29LE512 SST29VE512 SST29EE VE512512Kb SST29EE512 SST29LE512 MO-015 32-pdip-PH-3 SST29VE512

    SST29EE020

    Abstract: SST29LE020 SST29VE020
    Text: 2 Mbit 256K x8 Page-Write EEPROM SST29EE020 / SST29LE020 / SST29VE020 Data Sheet SST29EE / LE / VE0202Mb Page-Write flash memories FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE020 – 3.0-3.6V for SST29LE020 – 2.7-3.6V for SST29VE020


    Original     		PDF SST29EE020 SST29LE020 SST29VE020 SST29EE VE0202Mb SST29EE020 SST29LE020 MO-015 32-pdip-PH-3 SST29VE020

    SST29VE010-150-4C-NHE

    Abstract: transistor 1061 SST29EE010 SST29LE010 SST29VE010 SST29VE SST29VE010-200-4C-NHE 1504C SST29EE010-70-4I-EHE SST29VE010-150-4C-EHE
    Text: 1 Mbit 128K x8 Page-Write EEPROM SST29EE010 / SST29LE010 / SST29VE010 SST29EE / LE / VE0101Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 3.0-3.6V for SST29LE010


    Original     		PDF SST29EE010 SST29LE010 SST29VE010 SST29EE VE0101Mb SST29EE010 SST29LE010 32-pdip-PH-3 32-PIN SST29VE010-150-4C-NHE transistor 1061 SST29VE010 SST29VE SST29VE010-200-4C-NHE 1504C SST29EE010-70-4I-EHE SST29VE010-150-4C-EHE

    SST29EE020

    Abstract: SST29LE020 SST29VE020
    Text: 2 Mbit 256K x8 Page-Write EEPROM SST29EE020 / SST29LE020 / SST29VE020 SST29EE / LE / VE0202Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE020 – 3.0-3.6V for SST29LE020


    Original     		PDF SST29EE020 SST29LE020 SST29VE020 SST29EE VE0202Mb SST29EE020 SST29LE020 32-PIN SST29VE020

    SI4642DY-T1-E3

    Abstract: No abstract text available
    Text: New Product Si4642DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES • SkyFET Monolithic TrenchFET Power PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.00375 at VGS = 10 V 34 0.0047 at VGS = 4.5 V 30 VDS (V) 30 Qg (Typ) MOSFET and Schottky Diode


    Original     		PDF Si4642DY Si4642DY-T1-E3 18-Jul-08

    73233

    Abstract: No abstract text available
    Text: SiP4610A/B Vishay Siliconix Protected 1-A High-Side Load Switch APPLICATIONS • Peripheral Ports FEATURES • • • • • • • 1 A Continuous Output Current 2.4 V to 5.5 V Supply Voltage Range User Settable Current Limit Level Low Quiescent Current


    Original     		PDF SiP4610A/B AAT4610A 11-Mar-11 73233

    SST38VF166

    Abstract: JEP-137 32h 327
    Text: 16 Megabit FlashBank Memory SST38VF166 Data Sheet SST38VF16616Mb x16 FlashBank + 64Kb E2 FEATURES: • • • • • • Single 2.7-3.6V Read and Write Operations Separate Memory Banks for Code or Data – Simultaneous Read and Write Capability Superior Reliability


    Original     		PDF SST38VF166 SST38VF16616Mb MO-142 S71065 SST38VF166 JEP-137 32h 327

    GLS29EE010-70-4C-NHE

    Abstract: GLS29EE010 gls29ee010-70 GLS29EE010-70-4I GLS29EE010-90-4C-EHE gls29ee010-70-4c-phe GLS29EE010-70-4I-E gls29ee
    Text: 1 Mbit 128K x8 Page-Write EEPROM GLS29EE010 GLS29EE0101Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for GLS29EE010 • Superior Reliability – Endurance: 100,000 Cycles (typical)


    Original     		PDF GLS29EE010 GLS29EE0101Mb S71601 SST29EE010-70-4I-EHE S71061-15-001 GLS29EE010-70-4C-NHE GLS29EE010 gls29ee010-70 GLS29EE010-70-4I GLS29EE010-90-4C-EHE gls29ee010-70-4c-phe GLS29EE010-70-4I-E gls29ee